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Jin-Jian Zhou

Jin-Jian Zhou appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.othercond-mat.supr-con

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Published work

11 published item(s)

preprint2023arXiv

Combining Electron-Phonon and Dynamical Mean-Field Theory Calculations of Correlated Materials: Transport in the Correlated Metal Sr$_2$RuO$_4$

Electron-electron ($e$-$e$) and electron-phonon ($e$-ph) interactions are challenging to describe in correlated materials, where their joint effects govern unconventional transport, phase transitions, and superconductivity. Here we combine first-principles $e$-ph calculations with dynamical mean field theory (DMFT) as a step toward a unified description of $e$-$e$ and $e$-ph interactions in correlated materials. We compute the $e$-ph self-energy using the DMFT electron Green's function, and combine it with the $e$-$e$ self-energy from DMFT to obtain a Green's function including both interactions. This approach captures the renormalization of quasiparticle dispersion and spectral weight on equal footing. Using our method, we study the $e$-ph and $e$-$e$ contributions to the resistivity and spectral functions in the correlated metal Sr$_2$RuO$_4$. In this material, our results show that $e$-$e$ interactions dominate transport and spectral broadening in the temperature range we study (50$-$310~K), while $e$-ph interactions are relatively weak and account for only $\sim$10\% of the experimental resistivity. We also compute effective scattering rates, and find that the $e$-$e$ interactions result in scattering several times greater than the Planckian value $k_BT$, whereas $e$-ph interactions are associated with scattering rates lower than $k_BT$. Our work demonstrates a first-principles approach to combine electron dynamical correlations from DMFT with $e$-ph interactions in a consistent way, advancing quantitative studies of correlated materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Intermediate Polaronic Charge Transport in Organic Crystals from a Many-Body First-Principles Approach

Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hopping due to localized polarons formed by strong e-ph interactions. However, between these two limiting cases there is a less well understood intermediate regime where polarons are present but transport does not occur via hopping. Here we show a many-body first-principles approach that can accurately predict the carrier mobility in OMCs in the intermediate regime and shed light on its microscopic origin. Our approach combines a finite-temperature cumulant method to describe strong e-ph interactions with Green-Kubo transport calculations. We apply this parameter-free framework to naphthalene crystal, demonstrating electron mobility predictions within a factor of 1.5$-$2 of experiment between 100$-$300 K. Our analysis reveals that electrons couple strongly with both inter- and intramolecular phonons in the intermediate regime, as evidenced by the formation of a broad polaron satellite peak in the electron spectral function and the failure of the Boltzmann equation. Our study advances quantitative modeling of charge transport in complex organic crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ab initio electron-defect interactions using Wannier functions

Computing electron-defect (e-d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e-d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation, and the approach can significantly speed up calculations of e-d relaxation times and defect-limited charge transport. We show example calculations of vacancy defects in silicon and copper, for which we compute the e-d relaxation times on fine uniform and random Brillouin zone grids (and for copper, directly on the Fermi surface) as well as the defect-limited resistivity at low temperature. Our interpolation approach opens doors for atomistic calculations of charge carrier dynamics in the presence of defects.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Efficient Ab Initio Calculations of Electron-Defect Scattering and Defect-Limited Carrier Mobility

Electron-defect ($e$-d) interactions govern charge carrier dynamics at low temperature, where they limit the carrier mobility and give rise to phenomena of broad relevance in condensed matter physics. Ab initio calculations of $e$-d interactions are still in their infancy, mainly because they require large supercells and computationally expensive workflows. Here we develop an efficient ab initio approach for computing elastic $e$-d interactions, their associated $e$-d relaxation times (RTs), and the low-temperature defect-limited carrier mobility. The method is applied to silicon with simple neutral defects, such as vacancies and interstitials. Contrary to conventional wisdom, the computed $e$-d RTs depend strongly on carrier energy and defect type, and the defect-limited mobility is temperature dependent. These results highlight the shortcomings of widely employed heuristic models of $e$-d interactions in materials. Our method opens new avenues for studying $e$-d scattering and low-temperature charge transport from first principles.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Elliott-Yafet Spin-Phonon Relaxation Times from First Principles

We present a first-principles approach for computing the phonon-limited $T_1$ spin relaxation time due to the Elliot-Yafet mechanism. Our scheme combines fully-relativistic spin-flip electron-phonon interactions with an approach to compute the effective spin of band electrons in materials with inversion symmetry. We apply our method to silicon and diamond, for which we compute the temperature dependence of the spin relaxation times and analyze the contributions to spin relaxation from different phonons and valley processes. The computed spin relaxation times in silicon are in excellent agreement with experiment in the 50$-$300 K temperature range. In diamond, we predict intrinsic spin relaxation times of 540 $μ$s at 77 K and 2.3 $μ$s at 300 K. Our work enables precise predictions of spin-phonon relaxation times in a wide range of materials, providing microscopic insight into spin relaxation and guiding the development of spin-based quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ab initio Electron Mobility and Polar Phonon Scattering in GaAs

In polar semiconductors and oxides, the long-range nature of the electron-phonon (\textit{e}-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the \textit{e}-ph relaxation times (RTs) and electron mobility in polar materials. We apply our approach to GaAs, where using the Boltzmann equation with state-dependent RTs, we compute mobilities in excellent agreement with experiment at 250$-$500~K. The $e$-ph RTs and the phonon contributions to intravalley and intervalley $e$-ph scattering are also analyzed. Our work enables efficient ab initio computations of transport and carrier dynamics in polar materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide Bi$_{4}$Br$_{4}$

Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels protected by the time-reversal symmetry. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of $\sim$0.18 eV, in single-layer Bi$_{4}$Br$_{4}$, which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure. The band gap of single-layer Bi$_{4}$Br$_{4}$ is tunable via strain engineering, and the QSH phase is robust against external strain. In particular, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi$_{4}$Br$_{4}$ could be easily torn to ribbons with clean and atomically sharp edges, which are much desired for the observation and application of topological edge states. Our work thus provides a new promising material for experimental studies and practical applications of QSH effect.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Valley-polarized quantum anomalous Hall phases and tunable topological phase transitions in half-hydrogenated Bi honeycomb monolayers

Based on first-principles calculations, we find novel valley-polarized quantum anomalous Hall (VP-QAH) phases with a large gap-0.19 eV at an appropriate buckled angle and tunable topological phase transitions driven by the spontaneous magnetization within a half-hydrogenated Bi honeycomb monolayer. Depending on the magnetization orientation, four different phases can emerge, i.e., two VP-QAH phases, ferromagnetic insulating and metallic states. When the magnetization is reversed from the +$\mathbf{z}$ to -$\mathbf{z}$ directions, accompanying with a sign change in the Chern number (from -1 to +1), the chiral edge state is moved from valley $K$ to $K'$. Our findings provide a platform for designing dissipationless electronics and valleytronics in a more robust manner through the tuning of the magnetization orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Weak Topological Insulators and Composite Weyl Semimetals: $β$-Bi$_{4}$X$_{4}$ (X=Br, I)

While strong topological insulators (STI) have been experimentally realized soon after their theoretical predictions, a weak topological insulator (WTI) has yet to be unambiguously confirmed. A major obstacle is the lack of distinct natural cleavage surfaces to test the surface selective hallmark of WTI. With a new scheme, we discover that Bi$_{4}$X$_{4}$ (X=Br, I), stable or synthesized before, can be WTI with two natural cleavage surfaces, where two anisotropic Dirac cones stabilize and annihilate, respectively. We further find four surface state Lifshitz transitions under charge doping and two bulk topological phase transitions under uniaxial strain. Near the WTI-STI transition, there emerges a novel Weyl semimetal phase, in which the Fermi arcs generically appear at both cleavage surfaces whereas the Fermi circle only appears at one selected surface.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Topological edge states in single- and multi-layer Bi$_{4}$Br$_{4}$

Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH insulator materials, e.g., large band gap, appropriate insulating substrates, and multiple conducting channels. In this paper, based on first-principle calculations, we show that Bi$_{4}$Br$_{4}$ is a suitable candidate. Single-layer Bi$_{4}$Br$_{4}$ was demonstrated to be QSH insulator with sizable gap recently. Here, we find that, in multilayer systems, both the band gaps and low-energy electronic structures are only slightly affected by the interlayer coupling. On the intrinsic insulating substrate of Bi$_{4}$Br$_{4}$, the single-layer Bi$_{4}$Br$_{4}$ well preserves its topological edge states. Moreover, at the boundary of multilayer Bi$_{4}$Br$_{4}$, the topological edge states stemming from different single-layers are weakly coupled, and can be fully decoupled via constructing a stair-stepped edge. The decoupled topological edge states are well suitable for multi-channel dissipationless transport.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Engineering Topological Surface States and Giant Rashba Spin Splitting in BiTeI/Bi$_2$Te$_3$ Heterostructures

The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a large Rashba spin-splitting (RSS) in such materials, which combined with the topological surface states (TSS) could lead to useful spintronics applications. In this report, based on first principles calculations, we predict that the heterostructure of BiTeI/Bi$_{2}$Te$_{3}$ is a strong topological insulator with a giant RSS. The coexistence of TSS and RSS in the current system is native and stable. More importantly, we find that both the $\mathbb{Z}_{2}$ invariants and the Rashba energy can be controlled by engineering the layer geometries of the heterostructure, and the Rashba energy can be made even larger than that of bulk BiTeI. Our work opens a new route for designing topological spintronics devices based on inversion asymmetric heterostructures.

0 citations0 reviewsNo code linkedOpen access