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Marco Bernardi

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Published work

17 published item(s)

preprint2024arXiv

Hard X-ray Generation and Detection of Nanometer-Scale Localized Coherent Acoustic Wave Packets in SrTiO$_3$ and KTaO$_3$

We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers. We quantify key parameters of this process, including the localization size of the strain wavepacket and the energy absorption efficiency, which are determined by the photoelectron and Auger electron cascade dynamics, as well as the electron-phonon interaction. In particular, we obtain the localization size of the observed strain wave packet to be 1.5 and 2.5 nm for bulk SrTiO$_3$ and KTaO$_3$ single crystals, even though there are no nanoscale structures or light-intensity patterns that would ordinarily be required to generate acoustic waves of wavelengths much shorter than the penetration depth. Whereas in GaAs and GaP we do not observe a signal above background. The results provide crucial information on x-ray matter interactions, which sheds light on the mechanism of x-ray energy deposition, and the study of high wavevector acoustic phonons and thermal transport at the nanoscale.

preprint2023arXiv

Combining Electron-Phonon and Dynamical Mean-Field Theory Calculations of Correlated Materials: Transport in the Correlated Metal Sr$_2$RuO$_4$

Electron-electron ($e$-$e$) and electron-phonon ($e$-ph) interactions are challenging to describe in correlated materials, where their joint effects govern unconventional transport, phase transitions, and superconductivity. Here we combine first-principles $e$-ph calculations with dynamical mean field theory (DMFT) as a step toward a unified description of $e$-$e$ and $e$-ph interactions in correlated materials. We compute the $e$-ph self-energy using the DMFT electron Green's function, and combine it with the $e$-$e$ self-energy from DMFT to obtain a Green's function including both interactions. This approach captures the renormalization of quasiparticle dispersion and spectral weight on equal footing. Using our method, we study the $e$-ph and $e$-$e$ contributions to the resistivity and spectral functions in the correlated metal Sr$_2$RuO$_4$. In this material, our results show that $e$-$e$ interactions dominate transport and spectral broadening in the temperature range we study (50$-$310~K), while $e$-ph interactions are relatively weak and account for only $\sim$10\% of the experimental resistivity. We also compute effective scattering rates, and find that the $e$-$e$ interactions result in scattering several times greater than the Planckian value $k_BT$, whereas $e$-ph interactions are associated with scattering rates lower than $k_BT$. Our work demonstrates a first-principles approach to combine electron dynamical correlations from DMFT with $e$-ph interactions in a consistent way, advancing quantitative studies of correlated materials.

preprint2022arXiv

Comparison of the canonical transformation and energy functional formalisms for ab initio calculations of self-localized polarons

In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformations to efficiently compute the formation and energetics of small polarons[1]. A different approach based on a Landau-Pekar energy functional has been proposed in the recent literature [2,3]. In this work, we analyze and compare these two methods in detail. We show that the small polaron energy is identical in the two formalisms when using the same polaron wave function. We also show that our canonical transformation formalism can predict polaron band structures and can properly treat zero- and finite-temperature lattice vibration effects, although at present using a fixed polaron wave function. Conversely, the energy functional approach can compute the polaron wave function, but as we show here it neglects lattice vibrations and cannot address polaron self-localization and thermal band narrowing. Taken together, this work relates two different methods developed recently to study polarons from first-principles, highlighting their merits and shortcomings and discussing them both in a unified formalism.

preprint2022arXiv

Dark Matter Direct Detection in Materials with Spin-Orbit Coupling

Semiconductors with $\mathcal{O}(\text{meV})$ band gaps have been shown to be promising targets to search for sub-MeV mass dark matter (DM). In this paper we focus on a class of materials where such narrow band gaps arise naturally as a consequence of spin-orbit coupling (SOC). Specifically, we are interested in computing DM-electron scattering and absorption rates in these materials using state-of-the-art density functional theory (DFT) techniques. To do this, we extend the DM interaction rate calculation to include SOC effects which necessitates a generalization to spin-dependent wave functions. We apply our new formalism to calculate limits for several DM benchmark models using an example ZrTe$_{5}$ target and show that the inclusion of SOC can substantially alter projected constraints.

preprint2022arXiv

Intermediate Polaronic Charge Transport in Organic Crystals from a Many-Body First-Principles Approach

Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hopping due to localized polarons formed by strong e-ph interactions. However, between these two limiting cases there is a less well understood intermediate regime where polarons are present but transport does not occur via hopping. Here we show a many-body first-principles approach that can accurately predict the carrier mobility in OMCs in the intermediate regime and shed light on its microscopic origin. Our approach combines a finite-temperature cumulant method to describe strong e-ph interactions with Green-Kubo transport calculations. We apply this parameter-free framework to naphthalene crystal, demonstrating electron mobility predictions within a factor of 1.5$-$2 of experiment between 100$-$300 K. Our analysis reveals that electrons couple strongly with both inter- and intramolecular phonons in the intermediate regime, as evidenced by the formation of a broad polaron satellite peak in the electron spectral function and the failure of the Boltzmann equation. Our study advances quantitative modeling of charge transport in complex organic crystals.

preprint2020arXiv

Exciton-Phonon Interaction and Relaxation Times from First Principles

Electron-phonon ($e$-ph) interactions are key to understanding the dynamics of electrons in materials, and can be modeled accurately from first-principles. However, when electrons and holes form Coulomb-bound states (excitons), quantifying their interactions and scattering processes with phonons remains an open challenge. Here we show a rigorous approach for computing exciton-phonon (ex-ph) interactions and the associated exciton dynamical processes from first principles. Starting from the ab initio Bethe-Salpeter equation, we derive expressions for the ex-ph matrix elements and relaxation times. We apply our method to bulk hexagonal boron nitride, for which we map the ex-ph relaxation times as a function of exciton momentum and energy, analyze the temperature and phonon-mode dependence of the ex-ph scattering processes, and accurately predict the phonon-assisted photoluminescence. The approach introduced in this work is general and provides a framework for investigating exciton dynamics in a wide range of materials.

preprint2020arXiv

Physical Origin of the One-Quarter Exact Exchange in Density Functional Theory

Exchange interactions are a manifestation of the quantum mechanical nature of the electrons and play a key role in predicting the properties of materials from first principles. In density functional theory (DFT), a widely used approximation to the exchange energy combines fractions of density-based and Hartree-Fock (exact) exchange. This so-called hybrid DFT scheme is accurate in many materials, for reasons that are not fully understood. Here we show that a 1/4 fraction of exact exchange plus a 3/4 fraction of density-based exchange is compatible with a correct quantum mechanical treatment of the exchange energy of an electron pair in the unpolarized electron gas. We also show that the 1/4 exact-exchange fraction mimics a correlation interaction between doubly-excited electronic configurations. The relation between our results and trends observed in hybrid DFT calculations is discussed, along with other implications.

preprint2020arXiv

Precise Radiative Lifetimes in Bulk Crystals from First Principles: The Case of Wurtzite GaN

Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe-Salpeter equation) and spin-orbit coupling to include the exciton fine structure is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters.

preprint2019arXiv

Ab initio electron-defect interactions using Wannier functions

Computing electron-defect (e-d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e-d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation, and the approach can significantly speed up calculations of e-d relaxation times and defect-limited charge transport. We show example calculations of vacancy defects in silicon and copper, for which we compute the e-d relaxation times on fine uniform and random Brillouin zone grids (and for copper, directly on the Fermi surface) as well as the defect-limited resistivity at low temperature. Our interpolation approach opens doors for atomistic calculations of charge carrier dynamics in the presence of defects.

preprint2019arXiv

Efficient Ab Initio Calculations of Electron-Defect Scattering and Defect-Limited Carrier Mobility

Electron-defect ($e$-d) interactions govern charge carrier dynamics at low temperature, where they limit the carrier mobility and give rise to phenomena of broad relevance in condensed matter physics. Ab initio calculations of $e$-d interactions are still in their infancy, mainly because they require large supercells and computationally expensive workflows. Here we develop an efficient ab initio approach for computing elastic $e$-d interactions, their associated $e$-d relaxation times (RTs), and the low-temperature defect-limited carrier mobility. The method is applied to silicon with simple neutral defects, such as vacancies and interstitials. Contrary to conventional wisdom, the computed $e$-d RTs depend strongly on carrier energy and defect type, and the defect-limited mobility is temperature dependent. These results highlight the shortcomings of widely employed heuristic models of $e$-d interactions in materials. Our method opens new avenues for studying $e$-d scattering and low-temperature charge transport from first principles.

preprint2019arXiv

Elliott-Yafet Spin-Phonon Relaxation Times from First Principles

We present a first-principles approach for computing the phonon-limited $T_1$ spin relaxation time due to the Elliot-Yafet mechanism. Our scheme combines fully-relativistic spin-flip electron-phonon interactions with an approach to compute the effective spin of band electrons in materials with inversion symmetry. We apply our method to silicon and diamond, for which we compute the temperature dependence of the spin relaxation times and analyze the contributions to spin relaxation from different phonons and valley processes. The computed spin relaxation times in silicon are in excellent agreement with experiment in the 50$-$300 K temperature range. In diamond, we predict intrinsic spin relaxation times of 540 $μ$s at 77 K and 2.3 $μ$s at 300 K. Our work enables precise predictions of spin-phonon relaxation times in a wide range of materials, providing microscopic insight into spin relaxation and guiding the development of spin-based quantum technologies.

preprint2016arXiv

Ab initio Electron Mobility and Polar Phonon Scattering in GaAs

In polar semiconductors and oxides, the long-range nature of the electron-phonon (\textit{e}-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the \textit{e}-ph relaxation times (RTs) and electron mobility in polar materials. We apply our approach to GaAs, where using the Boltzmann equation with state-dependent RTs, we compute mobilities in excellent agreement with experiment at 250$-$500~K. The $e$-ph RTs and the phonon contributions to intravalley and intervalley $e$-ph scattering are also analyzed. Our work enables efficient ab initio computations of transport and carrier dynamics in polar materials.

preprint2016arXiv

First-principles dynamics of electrons and phonons

First-principles calculations combining density functional theory and many-body perturbation theory can provide microscopic insight into the dynamics of electrons and phonons in materials. We review this theoretical and computational framework, focusing on perturbative treatments of scattering, dynamics and transport of coupled electrons and phonons. We discuss application of these first-principles calculations to electronics, lighting, spectroscopy and renewable energy.

preprint2012arXiv

Nanocarbon-Based photovoltaics

Carbon materials are excellent candidates for photovoltaic solar cells: they are Earth-abundant, possess high optical absorption, and superior thermal and photostability. Here we report on solar cells with active layers made solely of carbon nanomaterials that present the same advantages of conjugated polymer-based solar cells - namely solution processable, potentially flexible, and chemically tunable - but with significantly increased photostability and the possibility to revert photodegradation. The device active layer composition is optimized using ab-initio density functional theory calculations to predict type-II band alignment and Schottky barrier formation. The best device fabricated is composed of PC70BM fullerene, semiconducting single-walled carbon nanotubes and reduced graphene oxide. It achieves a power conversion efficiency of 1.3% - a record for solar cells based on carbon as the active material - and shows significantly improved lifetime than a polymer-based device. We calculate efficiency limits of up to 13% for the devices fabricated in this work, comparable to those predicted for polymer solar cells. There is great promise for improving carbon-based solar cells considering the novelty of this type of device, the superior photostability, and the availability of a large number of carbon materials with yet untapped potential for photovoltaics. Our results indicate a new strategy for efficient carbon-based, solution-processable, thin film, photostable solar cells.

preprint2012arXiv

Optoelectronic Properties and Excitons in Hybridized Boron Nitride and Graphene Hexagonal Monolayers

We explain the nature of the electronic band gap and optical absorption spectrum of Carbon - Boron Nitride (CBN) hybridized monolayers using density functional theory (DFT), GW and Bethe-Salpeter equation calculations. The CBN optoelectronic properties result from the overall monolayer bandstructure, whose quasiparticle states are controlled by the C domain size and lie at separate energy for C and BN without significant mixing at the band edge, as confirmed by the presence of strongly bound bright exciton states localized within the C domains. The resulting absorption spectra show two marked peaks whose energy and relative intensity vary with composition in agreement with the experiment, with large compensating quasiparticle and excitonic corrections compared to DFT calculations. The band gap and the optical absorption are not regulated by the monolayer composition as customary for bulk semiconductor alloys and cannot be understood as a superposition of the properties of bulk-like C and BN domains as recent experiments suggested.

preprint2012arXiv

Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells

The recent advent of two-dimensional monolayer materials with tunable optoelectronic properties and high carrier mobility offers renewed opportunities for efficient, ultra-thin excitonic solar cells alternative to those based on conjugated polymer and small molecule donors. Using first-principles density functional theory and many-body calculations, we demonstrate that monolayers of hexagonal BN and graphene (CBN) combined with commonly used acceptors such as PCBM fullerene or semiconducting carbon nanotubes can provide excitonic solar cells with tunable absorber gap, donor-acceptor interface band alignment, and power conversion efficiency, as well as novel device architectures. For the case of CBN-PCBM devices, we predict the limit of power conversion efficiencies to be in the 10 - 20% range depending on the CBN monolayer structure. Our results demonstrate the possibility of using monolayer materials in tunable, efficient, polymer-free thin-film solar cells in which unexplored exciton and carrier transport regimes are at play.

preprint2012arXiv

Solar Energy Generation in Three Dimensions

We formulate, solve computationally and study experimentally the problem of collecting solar energy in three dimensions(1-5). We demonstrate that absorbers and reflectors can be combined in the absence of sun tracking to build three-dimensional photovoltaic (3DPV) structures that can generate measured energy densities (energy per base area, kWh/m2) higher by a factor of 2-20 than stationary flat PV panels, versus an increase by a factor of 1.3-1.8 achieved with a flat panel using dual-axis sun tracking(6). The increased energy density is countered by a higher solar cell area per generated energy for 3DPV compared to flat panel design (by a factor of 1.5-4 in our conditions), but accompanied by a vast range of improvements. 3DPV structures are steadier sources of solar energy generation at all latitudes: they can double the number of peak power generation hours and dramatically reduce the seasonal, latitude and weather variations of solar energy generation compared to a flat panel design. Self-supporting 3D shapes can create new schemes for PV installation and the increased energy density can facilitate the use of cheaper thin film materials in area-limited applications. Our findings suggest that harnessing solar energy in three dimensions can open new avenues towards Terawatt-scale generation.