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Wanxiang Feng

Wanxiang Feng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phquant-phcond-mat.str-el

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Published work

24 published item(s)

preprint2025arXiv

A Theory of Anisotropic Magnetoresistance in Altermagnets and Its Applications

Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting opportunities for spintronics. A key challenge in altermagnetic spintronics is the efficient reading and writing of information by switching the Neel vector orientations to represent binary 0 and 1. Here, we develop a microscopic theory of the magnetoresistance effect in altermagnets and propose that magnetoresistance anisotropy can serve as an effective mechanism for the electrical readout of the Neel vector. Our theory describes a two-step charge-spin-charge conversion process governed by the interplay between spin splitting and spin Hall effects: a longitudinal electric field induces transverse drift spin currents, which induce significant spin accumulation at the boundaries, generating a diffusive spin current that is converted back into a longitudinal charge current. By switching the Neel vector, a substantial change in magnetoresistance, akin to giant magnetoresistance in ferromagnets, is realized, enabling an electrically readable altermagnetic memory. Our microscopic theory provides deeper insights into the fundamental physics of the magnetoresistance effect in altermagnets and offers valuable guidance for designing next-generation ultradense and ultrafast spintronic devices based on altermagnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals

Recently discovered high-quality nodal chain spin-gapless semimetals $M$F$_3$ ($M$ = Pd, Mn) feature an ultra-clean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100\% spin-polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew-scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The first- and second-order magneto-optical effects and intrinsically anomalous transport in 2D van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I)

Recently, the two-dimensional magnetic semiconductor CrSBr has attracted considerable attention due to its excellent air-stable property and high magnetic critical temperature. Here, we systematically investigate the electronic structure, magnetocrystalline anisotropy energy, first-order magneto-optical effects (Kerr and Faraday effects) and second-order magneto-optical effects (Schafer-Hubert and Voigt effects) as well as intrinsically anomalous transport properties (anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects) of two-dimensional van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I) by using the first-principles calculations. Our results show that monolayer and bilayer CrXY (X = S, Se) are narrow band gap semiconductors, whereas monolayer and bilayer CrTeY are multi-band metals. The magnetic ground states of bilayer CrXY and the easy magnetization axis of monolayer and bilayer CrXY are confirmed by the magnetocrystalline anisotropy energy calculations. Utilizing magnetic group theory analysis, the first-order magneto-optical effects as well as anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects are identified to exist in ferromagnetic state with out-of-plane magnetization. The second-order magneto-optical effects are not restricted by the above symmetry requirements, and therefore can arise in ferromagnetic and antiferromagnetic states with in-plane magnetization. The calculated results are compared with the available theoretical and experimental data of other two-dimensional magnets and some conventional ferromagnets. The present work reveals that monolayer and bilayer CrXY with superior magneto-optical responses and anomalous transport properties provide an excellent material platform for the promising applications of magneto-optical devices, spintronics, and spin caloritronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant Anomalous Nernst Effect in Noncollinear Antiferromagnetic Mn-based Antiperovskite Nitrides

The anomalous Nernst effect (ANE) - the generation of a transverse electric voltage by a longitudinal heat current in conducting ferromagnets or antiferromagnets - is an appealing approach for thermoelectric power generation in spin caloritronics. The ANE in antiferromagnets is particularly convenient for the fabrication of highly efficient and densely integrated thermopiles as lateral configurations of thermoelectric modules increase the coverage of heat source without suffering from the stray fields that are intrinsic to ferromagnets. In this work, using first-principles calculations together with a group theory analysis, we systematically investigate the spin order-dependent ANE in noncollinear antiferromagnetic Mn-based antiperovskite nitrides Mn$_{3}X$N ($X$ = Ga, Zn, Ag, and Ni). The ANE in Mn$_{3}X$N is forbidden by symmetry in the R1 phase but amounts to its maximum value in the R3 phase. Among all Mn$_{3}X$N compounds, Mn$_{3}$NiN presents the most significant anomalous Nernst conductivity of 1.80 AK$^{-1}$m$^{-1}$ at 200 K, which can be further enhanced if strain, electric, or magnetic fields are applied. The ANE in Mn$_{3}$NiN, being one order of magnitude larger than that in the famous Mn$_{3}$Sn, is the largest one discovered in antiferromagnets so far. The giant ANE in Mn$_{3}$NiN originates from the sharp slope of the anomalous Hall conductivity at the Fermi energy, which can be understood well from the Mott relation. Our findings provide a novel host material for realizing antiferromagnetic spin caloritronics which promises exciting applications in energy conversion and information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Topological magneto-optical effects and their quantization in noncoplanar antiferromagnets

Reflecting the fundamental interactions of polarized light with magnetic matter, magneto-optical effects are well known since more than a century. The emergence of these phenomena is commonly attributed to the interplay between exchange splitting and spin-orbit coupling in the electronic structure of magnets. Using theoretical arguments, we demonstrate that topological magneto-optical effects can arise in noncoplanar antiferromagnets due to the finite scalar spin chirality, without any reference to exchange splitting or spin-orbit coupling. We propose spectral integrals of certain magneto-optical quantities that uncover the unique topological nature of the discovered effect. We also find that the Kerr and Faraday rotation angles can be quantized in insulating topological antiferromagnets in the low-frequency limit, owing to nontrivial global properties that manifest in quantum topological magneto-optical effects. Although the predicted topological and quantum topological magneto-optical effects are fundamentally distinct from conventional light-matter interactions, they can be measured by readily available experimental techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable magneto-optical effect, anomalous Hall effect and anomalous Nernst effect in two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$

Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous Nernst effect (ANE) in a recently discovered two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$. We find that the spin prefers an in-plane direction by the magnetocrystalline anisotropy energy calculations. The MOE, AHE, and ANE display a period of $2π/3$ when the spin rotates within the atomic plane, and they are forbidden if there exists a mirror plane perpendicular to the spin direction. By reorienting the spin from in-plane to out-of-plane direction, the MOE, AHE, and ANE are enhanced by around one order of magnitude. Moreover, we establish the layer-dependent magnetic properties for multilayer $1T$-CrTe$_2$ and predict antiferromagnetism and ferromagnetism for bilayer and trilayer $1T$-CrTe$_2$, respectively. The MOE, AHE, and ANE are prohibited in antiferromagnetic bilayer $1T$-CrTe$_2$ due to the existence of the spacetime inversion symmetry, whereas all of them are activated in ferromagnetic trilayer $1T$-CrTe$_2$ and the MOE is significantly enhanced compared to monolayer $1T$-CrTe$_2$. Our results show that the magneto-optical and anomalous transports proprieties of $1T$-CrTe$_2$ can be effectively modulated by altering spin direction and layer number.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$, suggesting their great potential for valleytronics and spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large magneto-optical Kerr effect in noncollinear antiferromagnets Mn$_{3}X$ ($X$ = Rh, Ir, or Pt)

Magneto-optical Kerr effect, normally found in magnetic materials with nonzero magnetization such as ferromagnets and ferrimagnets, has been known for more than a century. Here, using first-principles density functional theory, we demonstrate large magneto-optical Kerr effect in high temperature noncollinear antiferromagnets Mn$_{3}X$ ($X$ = Rh, Ir, or Pt), in contrast to usual wisdom. The calculated Kerr rotation angles are large, being comparable to that of transition metal magnets such as bcc Fe. The large Kerr rotation angles and ellipticities are found to originate from the lifting of the band double-degeneracy due to the absence of spatial symmetry in the Mn$_{3}X$ noncollinear antiferromagnets which together with the time-reversal symmetry would preserve the Kramers theorem. Our results indicate that Mn$_{3}X$ would provide a rare material platform for exploration of subtle magneto-optical phenomena in noncollinear magnetic materials without net magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide Bi$_{4}$Br$_{4}$

Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels protected by the time-reversal symmetry. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of $\sim$0.18 eV, in single-layer Bi$_{4}$Br$_{4}$, which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure. The band gap of single-layer Bi$_{4}$Br$_{4}$ is tunable via strain engineering, and the QSH phase is robust against external strain. In particular, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi$_{4}$Br$_{4}$ could be easily torn to ribbons with clean and atomically sharp edges, which are much desired for the observation and application of topological edge states. Our work thus provides a new promising material for experimental studies and practical applications of QSH effect.

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preprint2014arXiv

Effect of modulations of doping and strain on the electron transport in monolayer MoS_2

The doping and strain effects on the electron transport of monolayer MoS_2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm^2/(Vs) in the low doping level under the strain-free condition. The applying a small strain (3%) can improve the maximum mobility to 1150 cm^2/(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transition between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS_2.

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preprint2014arXiv

Topological edge states in single- and multi-layer Bi$_{4}$Br$_{4}$

Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH insulator materials, e.g., large band gap, appropriate insulating substrates, and multiple conducting channels. In this paper, based on first-principle calculations, we show that Bi$_{4}$Br$_{4}$ is a suitable candidate. Single-layer Bi$_{4}$Br$_{4}$ was demonstrated to be QSH insulator with sizable gap recently. Here, we find that, in multilayer systems, both the band gaps and low-energy electronic structures are only slightly affected by the interlayer coupling. On the intrinsic insulating substrate of Bi$_{4}$Br$_{4}$, the single-layer Bi$_{4}$Br$_{4}$ well preserves its topological edge states. Moreover, at the boundary of multilayer Bi$_{4}$Br$_{4}$, the topological edge states stemming from different single-layers are weakly coupled, and can be fully decoupled via constructing a stair-stepped edge. The decoupled topological edge states are well suitable for multi-channel dissipationless transport.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Engineering Topological Surface States and Giant Rashba Spin Splitting in BiTeI/Bi$_2$Te$_3$ Heterostructures

The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a large Rashba spin-splitting (RSS) in such materials, which combined with the topological surface states (TSS) could lead to useful spintronics applications. In this report, based on first principles calculations, we predict that the heterostructure of BiTeI/Bi$_{2}$Te$_{3}$ is a strong topological insulator with a giant RSS. The coexistence of TSS and RSS in the current system is native and stable. More importantly, we find that both the $\mathbb{Z}_{2}$ invariants and the Rashba energy can be controlled by engineering the layer geometries of the heterostructure, and the Rashba energy can be made even larger than that of bulk BiTeI. Our work opens a new route for designing topological spintronics devices based on inversion asymmetric heterostructures.

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preprint2012arXiv

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photo-induced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multi-valley materials with strong spin-orbit coupling and inversion symmetry breaking.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley- and a spin-Hall effect. The intrinsic spin Hall conductivity (ISHC) in p-doped samples is found to be much larger than the ISHC in n-doped samples due to the large spin-splitting at the valence band maximum. We also show that the ISHC in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strain tuning of topological band order in cubic semiconductors

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

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preprint2012arXiv

Three-dimensional topological insulators: A review on host materials

In recent years, three-dimensional topological insulators (3DTI) as a novel state of quantum matter have become a hot topic in the fields of condensed matter physics and materials sciences. To fulfill many spectacularly novel quantum phenomena predicted in 3DTI, real host materials are of crucial importance. In this review paper, we first introduce general methods of searching for new 3DTI based on the density-functional theory. Then, we review the recent progress on materials realization of 3DTI including simple elements, binary compounds, ternary compounds, and quaternary compounds. In these potential host materials, some of them have already been confirmed by experiments while the others are not yet. The 3DTI discussed here does not contain the materials with strong electron-electron correlation. Lastly, we give a brief summary and some outlooks in further studies.

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preprint2011arXiv

First-principles calculation of topological invariants Z2 within the FP-LAPW formalism

In this paper, we report the implementation of first-principles calculations of topological invariants Z2 within the full-potential linearized augmented plane-wave (FP-LAPW) formalism. In systems with both time-reversal and spatial inversion symmetry (centrosymmetric), one can use the parity analysis of Bloch functions at time-reversal invariant momenta to determine the Z2 invariants. In systems without spatial inversion symmetry (noncentrosymmetric), however, a more complex and systematic method in terms of the Berry gauge potential and the Berry curvature is required to identify the band topology. We show in detail how both methods are implemented in FP-LAPW formalism and applied to several classes of materials including centrosymmetric compounds Bi2Se3 and Sb2Se3 and noncentrosymmetric compounds LuPtBi, AuTlS2 and CdSnAs2. Our work provides an accurate and effective implementation of first-principles calculations to speed up the search of new topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetic and Electronic Properties of Metal-Atom Adsorbed Graphene

We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3d-transition and noble metal atoms using first principles calculation methods. We find that most transition metal atoms (i.e. Sc, Ti, V, Mn, Fe) favor the hollow adsorption site, and the interaction between magnetic adatoms and π-orbital of graphene induces sizable exchange field and Rashba spin-orbit coupling, which together open a nontrivial bulk gap near the Dirac points leading to the quantum-anomalous Hall effect. We also find that the noble metal atoms (i.e. Cu, Ag, Au) prefer the top adsorption site, and the dominant inequality of the AB sublattice potential opens another kind of nontrivial bulk gap exhibiting the quantum-valley Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantum Spin Hall Effect in Silicene

Recent years have witnessed great interest in the quantum spin Hall effect (QSHE) which is a new quantum state of matter with nontrivial topological property due to the scientific importance as a novel quantum state and the technological applications in spintronics. Taking account of Si, Ge significant importance as semiconductor material and intense interest in the realization of QSHE for spintronics, here we investigate the spin-orbit opened energy gap and the band topology in recently synthesized silicene using first-principles calculations. We demonstrate that silicene with topologically nontrivial electronic structures can realize QSHE by exploiting adiabatic continuity and direct calculation of the Z2 topological invariant. We predict that QSHE in silicene can be observed in an experimentally accessible low temperature regime with the spin-orbit band gap of 1.55 meV, much higher than that of graphene due to large spin-orbit coupling and the low-buckled structure. Furthermore, we find that the gap will increase to 2.90 meV under certain pressure strain. Finally, we also study germanium with similar low buckled stable structure, and predict that SOC opens a band gap of 23.9 meV, much higher than the liquid nitrogen temperature.

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preprint2011arXiv

Topological Aspect and Quantum Magnetoresistance of $β$-Ag$_2$Te

To explain the unusual non-saturating linear magnetoresistance observed in silver chalcogenides, the quantum scenario has been proposed based on the assumption of gapless linear energy spectrum. Here we show, by first principles calculations, that $β$-Ag$_2$Te with distorted anti-fluorite structure is in fact a topological insulator with gapless Dirac-type surface states. The characteristic feature of this new binary topological insulator is the highly anisotropic Dirac cone, in contrast to known examples, such as Bi$_2$Te$_3$ and Bi$_2$Se$_3$. The Fermi velocity varies an order of magnitude by rotating the crystal axis.

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preprint2010arXiv

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a bandgap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.

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preprint2010arXiv

Half-Heusler Topological Insulators: A First-Principle Study with the Tran-Blaha Modified Becke-Johnson Density Functional

We systematically investigate the topological band structures of half-Heusler compounds using first-principles calculations. The modified Becke-Johnson exchange potential together with local density approximation for the correlation potential (MBJLDA) has been used here to obtain accurate band inversion strength and band order. Our results show that a large number of half-Heusler compounds are candidates for three-dimensional topological insulators. The difference between band structures obtained using the local density approximation (LDA) and MBJLDA potential is also discussed.

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preprint2010arXiv

Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects

We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a non-zero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result.

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preprint2010arXiv

Three-Dimensional Topological Insulators in I-III-VI$_2$ and II-IV-V$_2$ Chalcopyrite Semiconductors

The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science. A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity, which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI$_2$ and II-IV-V$_2$ can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors, and particularly their ability to host room-temperature ferromagnetism, make them appealing candidates for novel spintronic devices.

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