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Researcher profile

Yugui Yao

Yugui Yao contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.comp-phphysics.opticscond-mat.dis-nncond-mat.soft

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Published work

41 published item(s)

preprint2026arXiv

Open quantum theory of magnetoresistance in mesoscopic magnetic materials

Magnetoresistance (MR) in magnetic materials arises from spin-exchange coupling between local moments and itinerant electrons, representing a challenging many-body open-quantum problem. Here we develop a comprehensive microscopic theory of MR within an open-quantum-system framework by solving the Liouville-von Neumann equation for a hybrid system of free electrons and local moments using the time-convolutionless projection operator method. Our approach reveals both ferromagnetic and antiferromagnetic MR as consequences of temperature- and field-dependent spin decoherence, encompassing spin relaxation and dephasing. In particular, the resistance associated with spin decoherence is governed by the order parameters of magnetic materials, such as the magnetization in ferromagnets and the Néel vector in antiferromagnets. This theory deepens the fundamental understanding of MR and offers guidance for interpreting and designing experiments on magnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

A Theory of Anisotropic Magnetoresistance in Altermagnets and Its Applications

Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting opportunities for spintronics. A key challenge in altermagnetic spintronics is the efficient reading and writing of information by switching the Neel vector orientations to represent binary 0 and 1. Here, we develop a microscopic theory of the magnetoresistance effect in altermagnets and propose that magnetoresistance anisotropy can serve as an effective mechanism for the electrical readout of the Neel vector. Our theory describes a two-step charge-spin-charge conversion process governed by the interplay between spin splitting and spin Hall effects: a longitudinal electric field induces transverse drift spin currents, which induce significant spin accumulation at the boundaries, generating a diffusive spin current that is converted back into a longitudinal charge current. By switching the Neel vector, a substantial change in magnetoresistance, akin to giant magnetoresistance in ferromagnets, is realized, enabling an electrically readable altermagnetic memory. Our microscopic theory provides deeper insights into the fundamental physics of the magnetoresistance effect in altermagnets and offers valuable guidance for designing next-generation ultradense and ultrafast spintronic devices based on altermagnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Pressure-Induced Superconductivity in Topological Heterostructure (PbSe)5(Bi2Se3)6

Recently, the natural heterostructure of (PbSe)5(Bi2Se3)6 has been theoretically predicted and experimentally confirmed as a topological insulator. In this work, we induce superconductivity in (PbSe)5(Bi2Se3)6 by implementing high pressure. As increasing pressure up to 10 GPa, superconductivity with Tc ~ 4.6 K suddenly appears, followed by an abrupt decrease. Remarkably, upon further compression above 30 GPa, a new superconducting state arises, where pressure raises the Tc to an unsaturated 6.0 K within the limit of our research. Combining XRD and Raman spectroscopies, we suggest that the emergence of two distinct superconducting states occurs concurrently with the pressure-induced structural transition in this topological heterostructure (PbSe)5(Bi2Se3)6.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A phonon irreducible representations calculator

The irreducible representation of band structure is important for physical properties. Based on phonopy and recently developed SpaceGroupIrep package, we developed a package PhononIrep, which can get the band irreducible representation for arbitrary $\boldsymbol{k}$ point at first-principles level. As an application, we for the first time predict the cubic crossing Dirac point can exist in conventional crystal phonon systems X$_3$Y (X=Ti, Nb, Ta, Y=Au, Sb). We hope this package will facilitate phonon research in the future.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Band tilt induced nonlinear Nernst effect in topological insulators: An efficient generation of high-performance spin polarization

Topological insulators (TIs) hold promise as a platform for spintronics applications due to the fascinating spin-momentum locking (SML) of the surface states. One particular interest lies in using TIs as spin-polarized sources for spintronics structures. Here, we propose the band tilt induced nonlinear Nernst effect (NLNE) in TIs as a clean and efficient route to generate high-performance spin polarization (SP). We show that in the presence of SML and hexagonal warping effect a finite band tilt can induce an imbalance of two spin carriers and effectively give rise to spin-polarized NLNE current in TIs. In our scheme, both the spin current and charge current regime can be achieved under the thermal drive. The obtainable SP can be efficiently tuned in either a smooth or rapid way, exhibiting highly flexible tunability. In addition, near-unity SP can be generated within a wide range of tunable parameters, which is also found to be robust against temperature. Therefore, our work provides a mechanism to realize controllable room-temperature high-degree SP based on TIs, which is of essential importance for future spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Carrier Injection and Manipulation of Charge-Density Wave in Kagome Superconductor CsV3Sb5

Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an efficient carrier-doping method. Here we report successful electron doping to CsV3Sb5 by Cs dosing, as visualized by angle-resolved photoemission spectroscopy. We found that the electron doping with Cs dosing proceeds in an orbital-selective way, as characterized by a marked increase in electron filling of the Sb 5pz and V 3dxz/yz bands as opposed to relatively insensitive nature of the V 3dxy/x2-y2 bands. By monitoring the temperature evolution of the CDW gap around the M point, we found that the CDW can be completely killed by Cs dosing while keeping the saddle point with the V 3dxy/x2-y2 character almost pinned at the Fermi level. The present result suggests a crucial role of multi-orbital effect to the occurrence of CDW, and provides an important step toward manipulating the CDW and superconductivity in AV3Sb5.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals

Recently discovered high-quality nodal chain spin-gapless semimetals $M$F$_3$ ($M$ = Pd, Mn) feature an ultra-clean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100\% spin-polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew-scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Giant second-order nonlinearity in twisted bilayer graphene

In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the nonlinear Hall effect (NLHE). The intrinsic contribution is closely related to the Berry curvature dipole and has been extensively investigated recently. The study of the extrinsic contribution, however, is scarce, although it can enter the NLHE even in the leading order. Here, we report a giant nonlinear transport response in TBG, in which the intrinsic mechanism is forbidden. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. The peak value of the second-order Hall conductivity close to the full filling of the moiré band reaches 8.76 $μmSV^{-1}$, four-order larger than those detected in $WTe_2$. The observed giant second-order nonlinearity can be understood from the collaboration of the asymmetric scattering of electrons off the static (Coulomb impurities) and dynamic disorders (phonons) in noncentrosymmetric crystals. It is mainly determined by the skew-scattering contribution from impurities at 1.7 K. The skew-scattering from phonons has a much larger coupling coefficient as suggested by the scaling results, and becomes as important as the impurity contribution as the temperature rises. Our observations demonstrate the potential of TBG in studying nonlinear response and possible rectification applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Inventory of high-quality flat-band van der Waals materials

More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Local Plastic Response and Slow Heterogeneous Dynamics of Supercooled Liquids

We demonstrate, via numerical simulations, that the relaxation dynamics of supercooled liquids correlates well with a plastic length scale measuring a particle's response to impulsive localized perturbations and weakly to measures of local elasticity. We find that the particle averaged plastic length scale vanishes linearly in temperature and controls the super-Arrhenius temperature dependence of the relaxation time. Furthermore, we show that the plastic length scale of individual particles correlates with their typical displacement at the relaxation time. In contrast, the local elastic response only correlates with the dynamics on the vibrational time scale.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of one-dimensional Dirac fermions in silicon nanoribbons

Dirac materials, which feature Dirac cones in the reciprocal space, have been one of the hottest topics in condensed matter physics in the past decade. To date, 2D and 3D Dirac Fermions have been extensively studied, while their 1D counterparts are rare. Recently, Si nanoribbons (SiNRs), which are composed of alternating pentagonal Si rings, have attracted intensive attention. However, the electronic structure and topological properties of SiNRs are still elusive. Here, by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy measurements, first-principles calculations, and tight-binding model analysis, we demonstrate the existence of 1D Dirac Fermions in SiNRs. Our theoretical analysis shows that the Dirac cones derive from the armchairlike Si chain in the center of the nanoribbon and can be described by the Su-Schrieffer-Heeger model. These results establish SiNRs as a platform for studying the novel physical properties in 1D Dirac materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$

The quasi-one-dimensional van der Waals compound Bi$_4$Br$_4$ was recently found to be a promising high-order topological insulator with exotic electronic states. In this paper, we study the electrical transport properties of Bi$_4$Br$_4$ bulk crystals. Two electron-type samples with different electron concentrations are investigated. Both samples have saturation resistivity behavior in low temperature. In the low-concentration sample, two-dimensional quantum oscillations are clearly observed in the magnetoresistance measurements, which are attributed to the band-bending-induced surface state on the (001) facet. In the high-concentration sample, the angular magnetoresistance exhibits two pairs of symmetrical sharp valleys with an angular difference close to the angle between the crystal planes (001) and (100). The additional valley can be explained by the contribution of the boundary states on the (100) facet. Besides, Hall measurements at low temperatures reveal an anomalous decrease of electron concentration with increasing temperature, which can be explained by the temperature-induced Lifshitz transition. These results shed light on the abundant surface and boundary state transport signals and the temperature-induced Lifshitz transition in Bi$_4$Br$_4$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Systematic investigation of emergent particles in type-III magnetic space groups

In three-dimensional (3D) crystals, emergent particles arise when two or multiple bands contact and form degeneracy (band crossing) in the Brillouin zone. Recently a complete classification of emergent particles in 3D nonmagnetic crystals, which described by the type-II magnetic space groups (MSGs), has been established. However, a systematic investigation of emergent particles in magnetic crystals has not yet been performed, due to the complexity of the symmetries of magnetically ordered structures. Here, we address this challenging task by exploring the possibilities of the emergent particles in the 674 type-III MSGs. Based on effective k.p Hamiltonian and our classification of emergent particles [Yu et al., Sci. Bull. 67, 375 (2022) DOI:10.1016/j.scib.2021.10.023], we identify all possible emergent particles, including spinful and spinless, essential and accidental particles in the type-III MSGs. We find that all emergent particles in type-III MSGs also exist in type-II MSGs, with only one exception, i.e. the combined quadratic nodal line and nodal surface (QNL/NS). Moreover, tabulations of the emergent particles in each of the 674 type-III MSGs, together with the symmetry operations, the small corepresentations, the effective k.p Hamiltonians, and the topological character of these particles, are explicitly presented. Remarkably, combining this work and our homemade SpaceGroupIrep and MSGCorep packages will provide an effcient way to search topological magnetic materials with novel quasiparticles.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The first- and second-order magneto-optical effects and intrinsically anomalous transport in 2D van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I)

Recently, the two-dimensional magnetic semiconductor CrSBr has attracted considerable attention due to its excellent air-stable property and high magnetic critical temperature. Here, we systematically investigate the electronic structure, magnetocrystalline anisotropy energy, first-order magneto-optical effects (Kerr and Faraday effects) and second-order magneto-optical effects (Schafer-Hubert and Voigt effects) as well as intrinsically anomalous transport properties (anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects) of two-dimensional van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I) by using the first-principles calculations. Our results show that monolayer and bilayer CrXY (X = S, Se) are narrow band gap semiconductors, whereas monolayer and bilayer CrTeY are multi-band metals. The magnetic ground states of bilayer CrXY and the easy magnetization axis of monolayer and bilayer CrXY are confirmed by the magnetocrystalline anisotropy energy calculations. Utilizing magnetic group theory analysis, the first-order magneto-optical effects as well as anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects are identified to exist in ferromagnetic state with out-of-plane magnetization. The second-order magneto-optical effects are not restricted by the above symmetry requirements, and therefore can arise in ferromagnetic and antiferromagnetic states with in-plane magnetization. The calculated results are compared with the available theoretical and experimental data of other two-dimensional magnets and some conventional ferromagnets. The present work reveals that monolayer and bilayer CrXY with superior magneto-optical responses and anomalous transport properties provide an excellent material platform for the promising applications of magneto-optical devices, spintronics, and spin caloritronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Three-dimensional energy gap and origin of charge-density wave in kagome superconductor KV3Sb5

Kagome lattices offer a fertile ground to explore exotic quantum phenomena associated with electron correlation and band topology. The recent discovery of superconductivity coexisting with charge-density wave (CDW) in the kagome metals KV3Sb5, RbV3Sb5, and CsV3Sb5 suggests an intriguing entanglement of electronic order and superconductivity. However, the microscopic origin of CDW, a key to understanding the superconducting mechanism and its possible topological nature, remains elusive. Here, we report angle-resolved photoemission spectroscopy of KV3Sb5 and demonstrate a substantial reconstruction of Fermi surface in the CDW state that accompanies the formation of small three-dimensional pockets. The CDW gap exhibits a periodicity of undistorted Brillouin zone along the out-of-plane wave vector, signifying a dominant role of the in-plane inter-saddle-point scattering to the mechanism of CDW. The characteristics of experimental band dispersion can be captured by first-principles calculations with the inverse star-of-David structural distortion. The present result indicates a direct link between the low-energy excitations and CDW, and puts constraints on the microscopic theory of superconductivity in alkali-metal kagome lattices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topological Invariant and Anomalous Edge Modes of Strongly Nonlinear Systems

Despite the extensive studies of topological states, their characterization in strongly nonlinear classical systems has been lacking. In this work, we identify the proper definition of Berry phase for nonlinear bulk modes and characterize topological phases in one-dimensional (1D) generalized nonlinear Schrödinger equations in the strongly nonlinear regime. We develop an analytic strategy to demonstrate the quantization of nonlinear Berry phase due to reflection symmetry. Mode amplitude itself plays a key role in nonlinear modes and controls topological phase transitions. We then show bulk-boundary correspondence by identifying the associated nonlinear topological edge modes. Interestingly, anomalous topological modes decay away from lattice boundaries to plateaus governed by fixed points of nonlinearities. We propose passive photonic and active electrical systems that can be experimentally implemented. Our work opens the door to the rich physics between topological phases of matter and nonlinear dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5

The recently discovered coexistence of superconductivity and charge density wave order in the kagome systems AV3Sb5 (A = K, Rb, Cs) has stimulated enormous interest. According to theory, a vanadium-based kagome system may host a flat band, nontrivial linear dispersive Dirac surface states and electronic correlation. Despite intensive investigations, it remains controversial about the origin of the charge density wave (CDW) order, how does the superconductivity relate to the CDW, and whether the anomalous Hall effect (AHE) arises primarily from the kagome lattice or the CDW order. We report an extensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping. Our results show that the Nb doping induces apparent suppression of CDW order and promotes superconductivity; meanwhile, the AHE and magnetoresistance (MR) will be significantly weakened together with the CDW order. Combining with our density functional calculations, we interpret these effects by an antiphase shift of the Fermi energy with respect to the saddle points near M and the Fermi surface centered around Γ. It is found that the former depletes the filled states for the CDW instability and worsens the nesting condition for CDW order; while the latter lifts the Fermi level upward and enlarges the Fermi surface surrounding the Γ point, and thus promotes superconductivity. Our results uncover a delicate but unusual competition between the CDW order and superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

$C_n$-symmetric higher-order topological crystalline insulators in atomically thin transition-metal dichalcogenides

Based on first-principles calculations and symmetry analysis, we predict atomically thin ($1-N$ layers) 2H group-VIB TMDs $MX_2$ ($M$ = Mo, W; $X$ = S, Se, Te) are large-gap higher-order topological crystalline insulators protected by $C_3$ rotation symmetry. We explicitly demonstrate the nontrivial topological indices and existence of the hallmark corner states with quantized fractional charge for these familiar TMDs with large bulk optical band gaps ($1.64-1.95$ eV for the monolayers), which would facilitate the experimental detection by STM. We find that the well-defined corner states exist in the triangular finite-size flakes with armchair edges of the atomically thin ($1-N$ layers) 2H group-VIB TMDs, and the corresponding quantized fractional charge is the number of layers $N$ divided by 3 modulo integers, which will simply double including spin degree of freedom.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electron-phonon coupling in the charge density wave state of CsV$_3$Sb$_5$

Metallic materials with kagome lattice structure are interesting because their electronic structures can host flat bands, Dirac cones, and van Hove singularities, resulting in strong electron correlations, nontrivial band topology, charge density wave (CDW), and unconventional superconductivity. Recently, kagome lattice compounds AV$_3$Sb$_5$ (A = K, Rb, Cs) are found to have intertwined CDW order and superconductivity. The origin of the CDW has been suggested to be purely electronic, arising from Fermi-surface instabilities of van Hove singularity (saddle point) near the M points. Here we use neutron scattering experiments to demonstrate that the CDW order in CsV$_3$Sb$_5$ is associated with static lattice distortion and a sudden hardening of the B3u longitudinal optical phonon mode, thus establishing that electron-phonon coupling must also play an important role in the CDW order of AV$_3$Sb$_5$.

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preprint2021arXiv

Encyclopedia of emergent particles in type-IV magnetic space groups

The research on emergent particles in condensed matters has been attracting tremendous interest, and recently it is extended to magnetic systems. Here, we study the emergent particles stabilized by the symmetries of type-IV magnetic space groups (MSGs). Type-IV MSGs feature a special time reversal symmetry $\{\mathcal{T}|\boldsymbol{t}_0\}$, namely, the time reversal operation followed by a half lattice translation, which significantly alters the symmetry conditions for stabilizing the band degeneracies. In this work, based on symmetry analysis and modeling, we present a complete classification of emergent particles in type-IV MSGs by studying all possible (spinless and spinful, essential and accidental) particles in each of the 517 type-IV MSGs. Particularly, the detailed correspondence between the emergent particles and the type-IV MSGs that can host them are given in easily accessed interactive tables, where the basic information of the emergent particles, including the symmetry conditions, the effective Hamiltonian, the band dispersion and the topological characters can be found. According to the established encyclopedia, we find that several emergent particles that are previously believed to exist only in spinless systems will occur in spinful systems here, and vice versa, due to the $\{{\cal T}|\boldsymbol{t}_{0}\}$ symmetry. Our work not only deepens the understanding of the symmetry conditions for realizing emergent particles but also provides specific guidance for searching and designing materials with target particles.

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preprint2021arXiv

From Atomic Semimetal to Topological Nontrivial Insulator

Topological band insulators and (semi-) metals can arise out of atomic insulators when the hopping strength between electrons increases. Such topological phases are separated from the atomic insulator by a bulk gap closing. In this work, we show that in many (magnetic) space groups, the crystals with certain Wyckoff positions and orbitals being occupied must be semimetal or metals in the atomic limit, e.g. the hopping strength between electrons is infinite weak but not vanishing, which then are termed atomic (semi-)metals (ASMs). We derive a sufficient condition for realizing ASMs in spinless and spinful systems. Remarkably, we find that increasing the hopping strength between electrons may transform an ASM into an insulator with both symmetries and electron fillings of crystal are preserved. The induced insulators inevitably are topologically non-trivial and at least are obstructed atomic insulators (OAIs) that are labeled as trivial insulator in topological quantum chemistry website. Particularly, using silicon as an example, we show ASM criterion can discover the OAIs missed by the recently proposed criterion of filling enforced OAI. Our work not only establishes an efficient way to identify and design non-trivial insulators but also predicts that the group-IV elemental semiconductors are ideal candidate materials for OAI.

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preprint2021arXiv

MagneticTB: A package for tight-binding model of magnetic and non-magnetic materials

We present a Mathematica program package MagneticTB, which can generate the tight-binding model for arbitrary magnetic space group. The only input parameters in MagneticTB are the (magnetic) space group number and the orbital information in each Wyckoff positions. Some useful functions including getting the matrix expression for symmetry operators, manipulating the energy band structure by parameters and interfacing with other software are also developed. MagneticTB can help to investigate the physical properties in both magnetic and non-magnetic system, especially for topological properties.

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preprint2021arXiv

No observation of chiral flux current in the topological kagome metal CsV$_{3}$Sb$_{5}$

Compounds with kagome lattice usually host many exotic quantum states, including the quantum spin liquid, non-trivial topological Dirac bands and a strongly renormalized flat band, etc. Recently an interesting vanadium based kagome family $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, or Cs) was discovered, and these materials exhibit multiple interesting properties, including unconventional saddle-point driving charge density wave (CDW) state, superconductivity, etc. Furthermore, some experiments show anomalous Hall effect which inspires that there might be some chiral flux current states. Here we report scanning tunneling measurements by using spin-polarized tips. Although we have observed clearly the $2a_0\times2a_0$ CDW and $4a_0$ stripe orders, the well-designed experiments with refined spin-polarized tips do not reveal any trace of the chiral flux current phase in CsV$_3$Sb$_5$ within the limits of experimental accuracy. No observation of the local magnetic moment in our experiments may put an upper bound constraint on the magnitude of magnetic moments induced by the possible chiral loop current which has a time-reversal symmetry breaking along $c$-axis in CsV$_{3}$Sb$_{5}$.

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preprint2021arXiv

Two-dimensional Dirac semiconductor and its material realization

We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

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preprint2020arXiv

Engineering symmetry breaking in two-dimensional layered materials

Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of two-dimensional layered materials not only offers extraordinary opportunities to tune their physical properties, but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer symmetry breaking of two-dimensional layered materials. In this Review, we focus on the recent progresses on engineering the breaking of inversion, rotational, time reversal and spontaneous gauge symmetries in two-dimensional layered materials, and illustrate our perspectives on how these may lead to potential new physics and applications.

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preprint2020arXiv

Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones

Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials.

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preprint2020arXiv

Ferromagnetic hybrid nodal loop and switchable type-I and type-II Weyl fermions in two-dimension

As a novel type of fermionic state, hybrid nodal loop with the coexistence of both type-I and type- II band crossings has attracted intense research interest. However, it remains a challenge to realize hybrid nodal loop in both two-dimensional (2D) materials and in ferromagnetic (FM) materials. Here, we propose the first FM hybrid nodal loop in 2D CrN monolayer. We show that the material has a high Curie temperature (> 600 K) FM ground state, with the out-of-plane [001] magnetization. It shows a half-metallic band structure with two bands in the spin-up channel crossing each other near the Fermi level. These bands produce both type-I and type-II band crossings, which form a fully spin-polarized hybrid nodal loop. We find the nodal loop is protected by the mirror symmetry and robust against spin-orbit coupling (SOC). An effective Hamiltonian characterizing the hybrid nodal loop is established. We further find the configuration of nodal loop can be shifted under external perturbations such as strain. Most remarkably, we demonstrate that both type-I and type-II Weyl nodes can be realized from such FM hybrid nodal loop by simply shifting the magnetization from out-of-plane to in-plane. Our work provides an excellent candidate to realize FM hybrid nodal loop and Weyl fermions in 2D material, and is also promising for related topological applications with their intriguing properties.

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preprint2020arXiv

Giant Anomalous Nernst Effect in Noncollinear Antiferromagnetic Mn-based Antiperovskite Nitrides

The anomalous Nernst effect (ANE) - the generation of a transverse electric voltage by a longitudinal heat current in conducting ferromagnets or antiferromagnets - is an appealing approach for thermoelectric power generation in spin caloritronics. The ANE in antiferromagnets is particularly convenient for the fabrication of highly efficient and densely integrated thermopiles as lateral configurations of thermoelectric modules increase the coverage of heat source without suffering from the stray fields that are intrinsic to ferromagnets. In this work, using first-principles calculations together with a group theory analysis, we systematically investigate the spin order-dependent ANE in noncollinear antiferromagnetic Mn-based antiperovskite nitrides Mn$_{3}X$N ($X$ = Ga, Zn, Ag, and Ni). The ANE in Mn$_{3}X$N is forbidden by symmetry in the R1 phase but amounts to its maximum value in the R3 phase. Among all Mn$_{3}X$N compounds, Mn$_{3}$NiN presents the most significant anomalous Nernst conductivity of 1.80 AK$^{-1}$m$^{-1}$ at 200 K, which can be further enhanced if strain, electric, or magnetic fields are applied. The ANE in Mn$_{3}$NiN, being one order of magnitude larger than that in the famous Mn$_{3}$Sn, is the largest one discovered in antiferromagnets so far. The giant ANE in Mn$_{3}$NiN originates from the sharp slope of the anomalous Hall conductivity at the Fermi energy, which can be understood well from the Mott relation. Our findings provide a novel host material for realizing antiferromagnetic spin caloritronics which promises exciting applications in energy conversion and information processing.

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preprint2020arXiv

Observation of the Topologically Originated Edge States in large-gap Quasi-One-Dimensional a-Bi$_4$Br$_4$

Two-dimensional topological insulator features time-reversal-invariant spin-momentum-locked one-dimensional (1D) edge states with a linear energy dispersion. However, experimental access to 1D edge states is still of great challenge and only limited to few techniques to date. Here, by using infrared absorption spectroscopy, we observed robust topologically originated edge states in a-Bi4Br4 belts with definitive signature of strong infrared absorption at belt sides and distinct anisotropy with respect to light polarizations, which is further supported by first-principles calculations. Our work demonstrates for the first time that the infrared spectroscopy can offer a power-efficient approach in experimentally probing 1D edge states of topological materials.

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preprint2020arXiv

Review: Progress on 2D topological insulators and potential ap-plications in electronic devices

Two-dimensional topological insulators (2DTI) have attracted increasing attention during the past few years. New 2DTI with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTI, ranging from single element graphene-like materials to bi-elemental TMDs and to multi-elemental materials, with different thicknesses, structures and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportuni-ties for future 2DTI study, especially on the device applications based on the topological properties.

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preprint2020arXiv

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.

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preprint2020arXiv

Topological magneto-optical effects and their quantization in noncoplanar antiferromagnets

Reflecting the fundamental interactions of polarized light with magnetic matter, magneto-optical effects are well known since more than a century. The emergence of these phenomena is commonly attributed to the interplay between exchange splitting and spin-orbit coupling in the electronic structure of magnets. Using theoretical arguments, we demonstrate that topological magneto-optical effects can arise in noncoplanar antiferromagnets due to the finite scalar spin chirality, without any reference to exchange splitting or spin-orbit coupling. We propose spectral integrals of certain magneto-optical quantities that uncover the unique topological nature of the discovered effect. We also find that the Kerr and Faraday rotation angles can be quantized in insulating topological antiferromagnets in the low-frequency limit, owing to nontrivial global properties that manifest in quantum topological magneto-optical effects. Although the predicted topological and quantum topological magneto-optical effects are fundamentally distinct from conventional light-matter interactions, they can be measured by readily available experimental techniques.

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preprint2020arXiv

Topological Nodal Line Electrides: Realization of Ideal Nodal Line State Nearly Immune from Spin-Orbit Coupling

Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work,we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and electrides simultaneously, provide new insight on designing excellent NLSs nearly immune from SOC. Since the states near the Fermi level are most contributed by nonnucleus-bounded interstitial electrons, nodal lines in TNLEs manifest extremely small SOCinduced gap even possessing heavy elements. Especially, we propose the family of A2B (A = Ca, Sr, Ba; B= As, Sb, Bi) materials are realistic TNLEs with negligible SOC-induced gaps, which can play as excellent platforms to study the intrinsic properties of TNLEs

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preprint2020arXiv

Tunable magneto-optical effect, anomalous Hall effect and anomalous Nernst effect in two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$

Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous Nernst effect (ANE) in a recently discovered two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$. We find that the spin prefers an in-plane direction by the magnetocrystalline anisotropy energy calculations. The MOE, AHE, and ANE display a period of $2π/3$ when the spin rotates within the atomic plane, and they are forbidden if there exists a mirror plane perpendicular to the spin direction. By reorienting the spin from in-plane to out-of-plane direction, the MOE, AHE, and ANE are enhanced by around one order of magnitude. Moreover, we establish the layer-dependent magnetic properties for multilayer $1T$-CrTe$_2$ and predict antiferromagnetism and ferromagnetism for bilayer and trilayer $1T$-CrTe$_2$, respectively. The MOE, AHE, and ANE are prohibited in antiferromagnetic bilayer $1T$-CrTe$_2$ due to the existence of the spacetime inversion symmetry, whereas all of them are activated in ferromagnetic trilayer $1T$-CrTe$_2$ and the MOE is significantly enhanced compared to monolayer $1T$-CrTe$_2$. Our results show that the magneto-optical and anomalous transports proprieties of $1T$-CrTe$_2$ can be effectively modulated by altering spin direction and layer number.

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preprint2020arXiv

Two-dimensional antiferromagnetic Dirac fermions in monolayer TaCoTe$_2$

Dirac point in two-dimensional (2D) materials has been a fascinating subject of research. Recently, it has been theoretically predicted that Dirac point may also be stabilized in 2D magnetic systems. However, it remains a challenge to identify concrete 2D materials which host such magnetic Dirac point. Here, based on first-principles calculations and theoretical analysis, we propose a stable 2D material, the monolayers TaCoTe$_2$, as an antiferromagnetic (AFM) 2D Dirac material. We show that it has an AFM ground state with an out-of-plane Néel vector. It hosts a pair of 2D AFM Dirac points on the Fermi level in the absence of spin-orbit coupling (SOC). When the SOC is considered, a small gap is opened at the original Dirac points. Meanwhile, another pair of Dirac points appear on the Brillouin zone boundary below the Fermi level, which are robust under SOC and have a type-II dispersion. Such a type-II AFM Dirac point has not been observed before. We further show that the location of this Dirac point as well as its dispersion type can be controlled by tuning the Néel vector orientation.

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preprint2020arXiv

Type-II topological metals

Topological metals (TMs) are a kind of special metallic materials, which feature nontrivial band crossings near the Fermi energy, giving rise to peculiar quasiparticle excitations. TMs can be classified based on the characteristics of these band crossings. For example, according to the dimensionality of the crossing, TMs can be classified into nodal-point, nodal-line, and nodal-surface metals. Another important property is the type of dispersion. According to degree of the tilt of the local dispersion around the crossing, we have type-I and type-II dispersions. This leads to significant distinctions in the physical properties of the materials, owing to their contrasting Fermi surface topologies. In this article, we briefly review the recent advances in this research direction, focusing on the concepts, the physical properties, and the material realizations of the type-II nodal-point and nodal-line TMs.

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preprint2020arXiv

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics.

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preprint2020arXiv

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$, suggesting their great potential for valleytronics and spintronics applications.

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preprint2019arXiv

Nodal Line Spin-gapless Semimetals and High-quality Candidate Materials

Spin-gapless semimetals (SGSMs), which generate 100\% spin polarization, are viewed as promising semi-half-metals in spintronics with high speed and low consumption. We propose and characterize a new $\mathbb{Z_{\mathrm{2}}}$ class of topological nodal line (TNL) in SGSMs. The proposed TNLSGSMs are protected by space-time inversion symmetry or glide mirror symmetry with two-dimensional (2D) fully spin-polarized nearly flat surface states. Based on first-principles calculations and effective model analysis, a series of high-quality materials with $\textit{R}\overline{3}\textit{c}$ and $\textit{R}{3}\textit{c}$ space groups are predicted to realize such TNLSGSMs (chainlike). The 2D fully spin-polarized nearly flat surface states may provide a route to achieving equal spin pairing topological superconductivity as well as topological catalysts.

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preprint2019arXiv

Transport tuning of photonic topological edge states by optical cavities

Crystal-symmetry-protected photonic topological edge states (PTESs) based on air rods in conventional dielectric materials are designed as photonic topological waveguides (PTWs) coupled with side optical cavities. We demonstrate that the cavity coupled with the PTW can change the reflection-free transport of the PTESs, where the cavities with single mode and twofold degenerate modes are taken as examples. The single-mode cavities are able to perfectly reflect the PTESs at their resonant frequencies, forming a dip in the transmission spectra. The dip full width at half depth depends on the coupling strength between the cavity and PTW and thus on the cavity geometry and distance relative to the PTW. While the cavities with twofold degenerate modes lead to a more complex PTES transport whose transmission spectra can be in the Fano form. These effects well agree with the one-dimensional PTW-cavity transport theory we build, in which the coupling of the PTW with cavity is taken as $δ$ or non-$δ$ type. Such PTWs coupled with side cavities, combining topological properties and convenient tunability, have wide diversities for topological photonic devices.

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