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Yugui Yao

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con cond-mat.str-el physics.comp-ph cond-mat.other quant-ph physics.optics cond-mat.dis-nn cond-mat.soft

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preprint2026arXiv

Open quantum theory of magnetoresistance in mesoscopic magnetic materials

Magnetoresistance (MR) in magnetic materials arises from spin-exchange coupling between local moments and itinerant electrons, representing a challenging many-body open-quantum problem. Here we develop a comprehensive microscopic theory of MR within an open-quantum-system framework by solving the Liouville-von Neumann equation for a hybrid system of free electrons and local moments using the time-convolutionless projection operator method. Our approach reveals both ferromagnetic and antiferromagnetic MR as consequences of temperature- and field-dependent spin decoherence, encompassing spin relaxation and dephasing. In particular, the resistance associated with spin decoherence is governed by the order parameters of magnetic materials, such as the magnetization in ferromagnets and the Néel vector in antiferromagnets. This theory deepens the fundamental understanding of MR and offers guidance for interpreting and designing experiments on magnetic materials.

preprint2025arXiv

A Theory of Anisotropic Magnetoresistance in Altermagnets and Its Applications

Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting opportunities for spintronics. A key challenge in altermagnetic spintronics is the efficient reading and writing of information by switching the Neel vector orientations to represent binary 0 and 1. Here, we develop a microscopic theory of the magnetoresistance effect in altermagnets and propose that magnetoresistance anisotropy can serve as an effective mechanism for the electrical readout of the Neel vector. Our theory describes a two-step charge-spin-charge conversion process governed by the interplay between spin splitting and spin Hall effects: a longitudinal electric field induces transverse drift spin currents, which induce significant spin accumulation at the boundaries, generating a diffusive spin current that is converted back into a longitudinal charge current. By switching the Neel vector, a substantial change in magnetoresistance, akin to giant magnetoresistance in ferromagnets, is realized, enabling an electrically readable altermagnetic memory. Our microscopic theory provides deeper insights into the fundamental physics of the magnetoresistance effect in altermagnets and offers valuable guidance for designing next-generation ultradense and ultrafast spintronic devices based on altermagnetism.

preprint2024arXiv

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Nonvolatile optical manipulation of material properties on demand is a highly sought-after feature in the advancement of future optoelectronic applications. While the discovery of such metastable transition in various materials holds good promise for achieving this goal, their practical implementation is still in the nascent stage. Here, we unravel the nature of the ultrafast laser-induced hidden state in 1T-TaS2 by systematically characterizing the electronic structure evolution throughout the reversible transition cycle. We identify it as a mixed-stacking state involving two similarly low-energy interlayer orders, which is manifested as the charge density wave phase disruption. Furthermore, our comparative experiments utilizing the single-pulse writing, pulse-train erasing and pulse-pair control explicitly reveal the distinct mechanism of the bidirectional transformations -- the ultrafast formation of the hidden state is initiated by a coherent phonon which triggers a competition of interlayer stacking orders, while its recovery to the initial state is governed by the progressive domain coarsening. Our work highlights the deterministic role of the competing interlayer orders in the nonvolatile phase transition in the layered material 1T-TaS2, and promises the coherent control of the phase transition and switching speed. More importantly, these results establish all-optical engineering of stacking orders in low-dimensional materials as a viable strategy for achieving desirable nonvolatile electronic devices.

preprint2023arXiv

Pressure-Induced Superconductivity in Topological Heterostructure (PbSe)5(Bi2Se3)6

Recently, the natural heterostructure of (PbSe)5(Bi2Se3)6 has been theoretically predicted and experimentally confirmed as a topological insulator. In this work, we induce superconductivity in (PbSe)5(Bi2Se3)6 by implementing high pressure. As increasing pressure up to 10 GPa, superconductivity with Tc ~ 4.6 K suddenly appears, followed by an abrupt decrease. Remarkably, upon further compression above 30 GPa, a new superconducting state arises, where pressure raises the Tc to an unsaturated 6.0 K within the limit of our research. Combining XRD and Raman spectroscopies, we suggest that the emergence of two distinct superconducting states occurs concurrently with the pressure-induced structural transition in this topological heterostructure (PbSe)5(Bi2Se3)6.

preprint2022arXiv

A phonon irreducible representations calculator

The irreducible representation of band structure is important for physical properties. Based on phonopy and recently developed SpaceGroupIrep package, we developed a package PhononIrep, which can get the band irreducible representation for arbitrary $\boldsymbol{k}$ point at first-principles level. As an application, we for the first time predict the cubic crossing Dirac point can exist in conventional crystal phonon systems X$_3$Y (X=Ti, Nb, Ta, Y=Au, Sb). We hope this package will facilitate phonon research in the future.

preprint2022arXiv

Band tilt induced nonlinear Nernst effect in topological insulators: An efficient generation of high-performance spin polarization

Topological insulators (TIs) hold promise as a platform for spintronics applications due to the fascinating spin-momentum locking (SML) of the surface states. One particular interest lies in using TIs as spin-polarized sources for spintronics structures. Here, we propose the band tilt induced nonlinear Nernst effect (NLNE) in TIs as a clean and efficient route to generate high-performance spin polarization (SP). We show that in the presence of SML and hexagonal warping effect a finite band tilt can induce an imbalance of two spin carriers and effectively give rise to spin-polarized NLNE current in TIs. In our scheme, both the spin current and charge current regime can be achieved under the thermal drive. The obtainable SP can be efficiently tuned in either a smooth or rapid way, exhibiting highly flexible tunability. In addition, near-unity SP can be generated within a wide range of tunable parameters, which is also found to be robust against temperature. Therefore, our work provides a mechanism to realize controllable room-temperature high-degree SP based on TIs, which is of essential importance for future spintronics applications.

preprint2022arXiv

Carrier Injection and Manipulation of Charge-Density Wave in Kagome Superconductor CsV3Sb5

Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an efficient carrier-doping method. Here we report successful electron doping to CsV3Sb5 by Cs dosing, as visualized by angle-resolved photoemission spectroscopy. We found that the electron doping with Cs dosing proceeds in an orbital-selective way, as characterized by a marked increase in electron filling of the Sb 5pz and V 3dxz/yz bands as opposed to relatively insensitive nature of the V 3dxy/x2-y2 bands. By monitoring the temperature evolution of the CDW gap around the M point, we found that the CDW can be completely killed by Cs dosing while keeping the saddle point with the V 3dxy/x2-y2 character almost pinned at the Fermi level. The present result suggests a crucial role of multi-orbital effect to the occurrence of CDW, and provides an important step toward manipulating the CDW and superconductivity in AV3Sb5.

preprint2022arXiv

Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals

Recently discovered high-quality nodal chain spin-gapless semimetals $M$F$_3$ ($M$ = Pd, Mn) feature an ultra-clean nodal chain in the spin up channel residing right at the Fermi level and displaying a large spin gap leading to a 100\% spin-polarization of transport properties. Here, we investigate both intrinsic and extrinsic contributions to anomalous and spin transport in this class of materials. The dominant intrinsic origin is found to originate entirely from the gapped nodal chains without the entanglement of any other trivial bands. The side-jump mechanism is predicted to be negligibly small, but intrinsic skew-scattering enhances the intrinsic Hall and Nernst signals significantly, leading to large values of respective conductivities. Our findings open a new material platform for exploring strong anomalous and spin transport properties in magnetic topological semimetals.

preprint2022arXiv

Giant second-order nonlinearity in twisted bilayer graphene

In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the nonlinear Hall effect (NLHE). The intrinsic contribution is closely related to the Berry curvature dipole and has been extensively investigated recently. The study of the extrinsic contribution, however, is scarce, although it can enter the NLHE even in the leading order. Here, we report a giant nonlinear transport response in TBG, in which the intrinsic mechanism is forbidden. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. The peak value of the second-order Hall conductivity close to the full filling of the moiré band reaches 8.76 $μmSV^{-1}$, four-order larger than those detected in $WTe_2$. The observed giant second-order nonlinearity can be understood from the collaboration of the asymmetric scattering of electrons off the static (Coulomb impurities) and dynamic disorders (phonons) in noncentrosymmetric crystals. It is mainly determined by the skew-scattering contribution from impurities at 1.7 K. The skew-scattering from phonons has a much larger coupling coefficient as suggested by the scaling results, and becomes as important as the impurity contribution as the temperature rises. Our observations demonstrate the potential of TBG in studying nonlinear response and possible rectification applications.

preprint2022arXiv

Inventory of high-quality flat-band van der Waals materials

More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science.

preprint2022arXiv

Local Plastic Response and Slow Heterogeneous Dynamics of Supercooled Liquids

We demonstrate, via numerical simulations, that the relaxation dynamics of supercooled liquids correlates well with a plastic length scale measuring a particle's response to impulsive localized perturbations and weakly to measures of local elasticity. We find that the particle averaged plastic length scale vanishes linearly in temperature and controls the super-Arrhenius temperature dependence of the relaxation time. Furthermore, we show that the plastic length scale of individual particles correlates with their typical displacement at the relaxation time. In contrast, the local elastic response only correlates with the dynamics on the vibrational time scale.

preprint2022arXiv

Observation of one-dimensional Dirac fermions in silicon nanoribbons

Dirac materials, which feature Dirac cones in the reciprocal space, have been one of the hottest topics in condensed matter physics in the past decade. To date, 2D and 3D Dirac Fermions have been extensively studied, while their 1D counterparts are rare. Recently, Si nanoribbons (SiNRs), which are composed of alternating pentagonal Si rings, have attracted intensive attention. However, the electronic structure and topological properties of SiNRs are still elusive. Here, by angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy measurements, first-principles calculations, and tight-binding model analysis, we demonstrate the existence of 1D Dirac Fermions in SiNRs. Our theoretical analysis shows that the Dirac cones derive from the armchairlike Si chain in the center of the nanoribbon and can be described by the Su-Schrieffer-Heeger model. These results establish SiNRs as a platform for studying the novel physical properties in 1D Dirac materials.

preprint2022arXiv

Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$

The quasi-one-dimensional van der Waals compound Bi$_4$Br$_4$ was recently found to be a promising high-order topological insulator with exotic electronic states. In this paper, we study the electrical transport properties of Bi$_4$Br$_4$ bulk crystals. Two electron-type samples with different electron concentrations are investigated. Both samples have saturation resistivity behavior in low temperature. In the low-concentration sample, two-dimensional quantum oscillations are clearly observed in the magnetoresistance measurements, which are attributed to the band-bending-induced surface state on the (001) facet. In the high-concentration sample, the angular magnetoresistance exhibits two pairs of symmetrical sharp valleys with an angular difference close to the angle between the crystal planes (001) and (100). The additional valley can be explained by the contribution of the boundary states on the (100) facet. Besides, Hall measurements at low temperatures reveal an anomalous decrease of electron concentration with increasing temperature, which can be explained by the temperature-induced Lifshitz transition. These results shed light on the abundant surface and boundary state transport signals and the temperature-induced Lifshitz transition in Bi$_4$Br$_4$.

preprint2022arXiv

Systematic investigation of emergent particles in type-III magnetic space groups

In three-dimensional (3D) crystals, emergent particles arise when two or multiple bands contact and form degeneracy (band crossing) in the Brillouin zone. Recently a complete classification of emergent particles in 3D nonmagnetic crystals, which described by the type-II magnetic space groups (MSGs), has been established. However, a systematic investigation of emergent particles in magnetic crystals has not yet been performed, due to the complexity of the symmetries of magnetically ordered structures. Here, we address this challenging task by exploring the possibilities of the emergent particles in the 674 type-III MSGs. Based on effective k.p Hamiltonian and our classification of emergent particles [Yu et al., Sci. Bull. 67, 375 (2022) DOI:10.1016/j.scib.2021.10.023], we identify all possible emergent particles, including spinful and spinless, essential and accidental particles in the type-III MSGs. We find that all emergent particles in type-III MSGs also exist in type-II MSGs, with only one exception, i.e. the combined quadratic nodal line and nodal surface (QNL/NS). Moreover, tabulations of the emergent particles in each of the 674 type-III MSGs, together with the symmetry operations, the small corepresentations, the effective k.p Hamiltonians, and the topological character of these particles, are explicitly presented. Remarkably, combining this work and our homemade SpaceGroupIrep and MSGCorep packages will provide an effcient way to search topological magnetic materials with novel quasiparticles.

preprint2022arXiv

The first- and second-order magneto-optical effects and intrinsically anomalous transport in 2D van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I)

Recently, the two-dimensional magnetic semiconductor CrSBr has attracted considerable attention due to its excellent air-stable property and high magnetic critical temperature. Here, we systematically investigate the electronic structure, magnetocrystalline anisotropy energy, first-order magneto-optical effects (Kerr and Faraday effects) and second-order magneto-optical effects (Schafer-Hubert and Voigt effects) as well as intrinsically anomalous transport properties (anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects) of two-dimensional van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I) by using the first-principles calculations. Our results show that monolayer and bilayer CrXY (X = S, Se) are narrow band gap semiconductors, whereas monolayer and bilayer CrTeY are multi-band metals. The magnetic ground states of bilayer CrXY and the easy magnetization axis of monolayer and bilayer CrXY are confirmed by the magnetocrystalline anisotropy energy calculations. Utilizing magnetic group theory analysis, the first-order magneto-optical effects as well as anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects are identified to exist in ferromagnetic state with out-of-plane magnetization. The second-order magneto-optical effects are not restricted by the above symmetry requirements, and therefore can arise in ferromagnetic and antiferromagnetic states with in-plane magnetization. The calculated results are compared with the available theoretical and experimental data of other two-dimensional magnets and some conventional ferromagnets. The present work reveals that monolayer and bilayer CrXY with superior magneto-optical responses and anomalous transport properties provide an excellent material platform for the promising applications of magneto-optical devices, spintronics, and spin caloritronics.

preprint2022arXiv

Three-dimensional energy gap and origin of charge-density wave in kagome superconductor KV3Sb5

Kagome lattices offer a fertile ground to explore exotic quantum phenomena associated with electron correlation and band topology. The recent discovery of superconductivity coexisting with charge-density wave (CDW) in the kagome metals KV3Sb5, RbV3Sb5, and CsV3Sb5 suggests an intriguing entanglement of electronic order and superconductivity. However, the microscopic origin of CDW, a key to understanding the superconducting mechanism and its possible topological nature, remains elusive. Here, we report angle-resolved photoemission spectroscopy of KV3Sb5 and demonstrate a substantial reconstruction of Fermi surface in the CDW state that accompanies the formation of small three-dimensional pockets. The CDW gap exhibits a periodicity of undistorted Brillouin zone along the out-of-plane wave vector, signifying a dominant role of the in-plane inter-saddle-point scattering to the mechanism of CDW. The characteristics of experimental band dispersion can be captured by first-principles calculations with the inverse star-of-David structural distortion. The present result indicates a direct link between the low-energy excitations and CDW, and puts constraints on the microscopic theory of superconductivity in alkali-metal kagome lattices.

preprint2022arXiv

Topological Invariant and Anomalous Edge Modes of Strongly Nonlinear Systems

Despite the extensive studies of topological states, their characterization in strongly nonlinear classical systems has been lacking. In this work, we identify the proper definition of Berry phase for nonlinear bulk modes and characterize topological phases in one-dimensional (1D) generalized nonlinear Schrödinger equations in the strongly nonlinear regime. We develop an analytic strategy to demonstrate the quantization of nonlinear Berry phase due to reflection symmetry. Mode amplitude itself plays a key role in nonlinear modes and controls topological phase transitions. We then show bulk-boundary correspondence by identifying the associated nonlinear topological edge modes. Interestingly, anomalous topological modes decay away from lattice boundaries to plateaus governed by fixed points of nonlinearities. We propose passive photonic and active electrical systems that can be experimentally implemented. Our work opens the door to the rich physics between topological phases of matter and nonlinear dynamics.

preprint2022arXiv

Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5

The recently discovered coexistence of superconductivity and charge density wave order in the kagome systems AV3Sb5 (A = K, Rb, Cs) has stimulated enormous interest. According to theory, a vanadium-based kagome system may host a flat band, nontrivial linear dispersive Dirac surface states and electronic correlation. Despite intensive investigations, it remains controversial about the origin of the charge density wave (CDW) order, how does the superconductivity relate to the CDW, and whether the anomalous Hall effect (AHE) arises primarily from the kagome lattice or the CDW order. We report an extensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping. Our results show that the Nb doping induces apparent suppression of CDW order and promotes superconductivity; meanwhile, the AHE and magnetoresistance (MR) will be significantly weakened together with the CDW order. Combining with our density functional calculations, we interpret these effects by an antiphase shift of the Fermi energy with respect to the saddle points near M and the Fermi surface centered around Γ. It is found that the former depletes the filled states for the CDW instability and worsens the nesting condition for CDW order; while the latter lifts the Fermi level upward and enlarges the Fermi surface surrounding the Γ point, and thus promotes superconductivity. Our results uncover a delicate but unusual competition between the CDW order and superconductivity.

preprint2021arXiv

$C_n$-symmetric higher-order topological crystalline insulators in atomically thin transition-metal dichalcogenides

Based on first-principles calculations and symmetry analysis, we predict atomically thin ($1-N$ layers) 2H group-VIB TMDs $MX_2$ ($M$ = Mo, W; $X$ = S, Se, Te) are large-gap higher-order topological crystalline insulators protected by $C_3$ rotation symmetry. We explicitly demonstrate the nontrivial topological indices and existence of the hallmark corner states with quantized fractional charge for these familiar TMDs with large bulk optical band gaps ($1.64-1.95$ eV for the monolayers), which would facilitate the experimental detection by STM. We find that the well-defined corner states exist in the triangular finite-size flakes with armchair edges of the atomically thin ($1-N$ layers) 2H group-VIB TMDs, and the corresponding quantized fractional charge is the number of layers $N$ divided by 3 modulo integers, which will simply double including spin degree of freedom.

preprint2021arXiv

Electron-phonon coupling in the charge density wave state of CsV$_3$Sb$_5$

Metallic materials with kagome lattice structure are interesting because their electronic structures can host flat bands, Dirac cones, and van Hove singularities, resulting in strong electron correlations, nontrivial band topology, charge density wave (CDW), and unconventional superconductivity. Recently, kagome lattice compounds AV$_3$Sb$_5$ (A = K, Rb, Cs) are found to have intertwined CDW order and superconductivity. The origin of the CDW has been suggested to be purely electronic, arising from Fermi-surface instabilities of van Hove singularity (saddle point) near the M points. Here we use neutron scattering experiments to demonstrate that the CDW order in CsV$_3$Sb$_5$ is associated with static lattice distortion and a sudden hardening of the B3u longitudinal optical phonon mode, thus establishing that electron-phonon coupling must also play an important role in the CDW order of AV$_3$Sb$_5$.

preprint2021arXiv

Encyclopedia of emergent particles in type-IV magnetic space groups

The research on emergent particles in condensed matters has been attracting tremendous interest, and recently it is extended to magnetic systems. Here, we study the emergent particles stabilized by the symmetries of type-IV magnetic space groups (MSGs). Type-IV MSGs feature a special time reversal symmetry $\{\mathcal{T}|\boldsymbol{t}_0\}$, namely, the time reversal operation followed by a half lattice translation, which significantly alters the symmetry conditions for stabilizing the band degeneracies. In this work, based on symmetry analysis and modeling, we present a complete classification of emergent particles in type-IV MSGs by studying all possible (spinless and spinful, essential and accidental) particles in each of the 517 type-IV MSGs. Particularly, the detailed correspondence between the emergent particles and the type-IV MSGs that can host them are given in easily accessed interactive tables, where the basic information of the emergent particles, including the symmetry conditions, the effective Hamiltonian, the band dispersion and the topological characters can be found. According to the established encyclopedia, we find that several emergent particles that are previously believed to exist only in spinless systems will occur in spinful systems here, and vice versa, due to the $\{{\cal T}|\boldsymbol{t}_{0}\}$ symmetry. Our work not only deepens the understanding of the symmetry conditions for realizing emergent particles but also provides specific guidance for searching and designing materials with target particles.

preprint2021arXiv

From Atomic Semimetal to Topological Nontrivial Insulator

Topological band insulators and (semi-) metals can arise out of atomic insulators when the hopping strength between electrons increases. Such topological phases are separated from the atomic insulator by a bulk gap closing. In this work, we show that in many (magnetic) space groups, the crystals with certain Wyckoff positions and orbitals being occupied must be semimetal or metals in the atomic limit, e.g. the hopping strength between electrons is infinite weak but not vanishing, which then are termed atomic (semi-)metals (ASMs). We derive a sufficient condition for realizing ASMs in spinless and spinful systems. Remarkably, we find that increasing the hopping strength between electrons may transform an ASM into an insulator with both symmetries and electron fillings of crystal are preserved. The induced insulators inevitably are topologically non-trivial and at least are obstructed atomic insulators (OAIs) that are labeled as trivial insulator in topological quantum chemistry website. Particularly, using silicon as an example, we show ASM criterion can discover the OAIs missed by the recently proposed criterion of filling enforced OAI. Our work not only establishes an efficient way to identify and design non-trivial insulators but also predicts that the group-IV elemental semiconductors are ideal candidate materials for OAI.

preprint2021arXiv

MagneticTB: A package for tight-binding model of magnetic and non-magnetic materials

We present a Mathematica program package MagneticTB, which can generate the tight-binding model for arbitrary magnetic space group. The only input parameters in MagneticTB are the (magnetic) space group number and the orbital information in each Wyckoff positions. Some useful functions including getting the matrix expression for symmetry operators, manipulating the energy band structure by parameters and interfacing with other software are also developed. MagneticTB can help to investigate the physical properties in both magnetic and non-magnetic system, especially for topological properties.

preprint2021arXiv

No observation of chiral flux current in the topological kagome metal CsV$_{3}$Sb$_{5}$

Compounds with kagome lattice usually host many exotic quantum states, including the quantum spin liquid, non-trivial topological Dirac bands and a strongly renormalized flat band, etc. Recently an interesting vanadium based kagome family $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, or Cs) was discovered, and these materials exhibit multiple interesting properties, including unconventional saddle-point driving charge density wave (CDW) state, superconductivity, etc. Furthermore, some experiments show anomalous Hall effect which inspires that there might be some chiral flux current states. Here we report scanning tunneling measurements by using spin-polarized tips. Although we have observed clearly the $2a_0\times2a_0$ CDW and $4a_0$ stripe orders, the well-designed experiments with refined spin-polarized tips do not reveal any trace of the chiral flux current phase in CsV$_3$Sb$_5$ within the limits of experimental accuracy. No observation of the local magnetic moment in our experiments may put an upper bound constraint on the magnitude of magnetic moments induced by the possible chiral loop current which has a time-reversal symmetry breaking along $c$-axis in CsV$_{3}$Sb$_{5}$.

preprint2021arXiv

Two-dimensional Dirac semiconductor and its material realization

We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

preprint2020arXiv

Engineering symmetry breaking in two-dimensional layered materials

Symmetry breaking in two-dimensional layered materials plays a significant role in their macroscopic electrical, optical, magnetic and topological properties, including but not limited to spin-polarization effects, valley-contrasting physics, nonlinear Hall effects, nematic order, ferroelectricity, Bose-Einstein condensation and unconventional superconductivity. Engineering symmetry breaking of two-dimensional layered materials not only offers extraordinary opportunities to tune their physical properties, but also provides unprecedented possibilities to introduce completely new physics and technological innovations in electronics, photonics and optoelectronics. Indeed, over the past 15 years, a wide variety of physical, structural and chemical approaches have been developed to engineer symmetry breaking of two-dimensional layered materials. In this Review, we focus on the recent progresses on engineering the breaking of inversion, rotational, time reversal and spontaneous gauge symmetries in two-dimensional layered materials, and illustrate our perspectives on how these may lead to potential new physics and applications.

preprint2020arXiv

Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones

Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials.

preprint2020arXiv

Ferromagnetic hybrid nodal loop and switchable type-I and type-II Weyl fermions in two-dimension

As a novel type of fermionic state, hybrid nodal loop with the coexistence of both type-I and type- II band crossings has attracted intense research interest. However, it remains a challenge to realize hybrid nodal loop in both two-dimensional (2D) materials and in ferromagnetic (FM) materials. Here, we propose the first FM hybrid nodal loop in 2D CrN monolayer. We show that the material has a high Curie temperature (> 600 K) FM ground state, with the out-of-plane [001] magnetization. It shows a half-metallic band structure with two bands in the spin-up channel crossing each other near the Fermi level. These bands produce both type-I and type-II band crossings, which form a fully spin-polarized hybrid nodal loop. We find the nodal loop is protected by the mirror symmetry and robust against spin-orbit coupling (SOC). An effective Hamiltonian characterizing the hybrid nodal loop is established. We further find the configuration of nodal loop can be shifted under external perturbations such as strain. Most remarkably, we demonstrate that both type-I and type-II Weyl nodes can be realized from such FM hybrid nodal loop by simply shifting the magnetization from out-of-plane to in-plane. Our work provides an excellent candidate to realize FM hybrid nodal loop and Weyl fermions in 2D material, and is also promising for related topological applications with their intriguing properties.

preprint2020arXiv

Giant Anomalous Nernst Effect in Noncollinear Antiferromagnetic Mn-based Antiperovskite Nitrides

The anomalous Nernst effect (ANE) - the generation of a transverse electric voltage by a longitudinal heat current in conducting ferromagnets or antiferromagnets - is an appealing approach for thermoelectric power generation in spin caloritronics. The ANE in antiferromagnets is particularly convenient for the fabrication of highly efficient and densely integrated thermopiles as lateral configurations of thermoelectric modules increase the coverage of heat source without suffering from the stray fields that are intrinsic to ferromagnets. In this work, using first-principles calculations together with a group theory analysis, we systematically investigate the spin order-dependent ANE in noncollinear antiferromagnetic Mn-based antiperovskite nitrides Mn$_{3}X$N ($X$ = Ga, Zn, Ag, and Ni). The ANE in Mn$_{3}X$N is forbidden by symmetry in the R1 phase but amounts to its maximum value in the R3 phase. Among all Mn$_{3}X$N compounds, Mn$_{3}$NiN presents the most significant anomalous Nernst conductivity of 1.80 AK$^{-1}$m$^{-1}$ at 200 K, which can be further enhanced if strain, electric, or magnetic fields are applied. The ANE in Mn$_{3}$NiN, being one order of magnitude larger than that in the famous Mn$_{3}$Sn, is the largest one discovered in antiferromagnets so far. The giant ANE in Mn$_{3}$NiN originates from the sharp slope of the anomalous Hall conductivity at the Fermi energy, which can be understood well from the Mott relation. Our findings provide a novel host material for realizing antiferromagnetic spin caloritronics which promises exciting applications in energy conversion and information processing.

preprint2020arXiv

Observation of the Topologically Originated Edge States in large-gap Quasi-One-Dimensional a-Bi$_4$Br$_4$

Two-dimensional topological insulator features time-reversal-invariant spin-momentum-locked one-dimensional (1D) edge states with a linear energy dispersion. However, experimental access to 1D edge states is still of great challenge and only limited to few techniques to date. Here, by using infrared absorption spectroscopy, we observed robust topologically originated edge states in a-Bi4Br4 belts with definitive signature of strong infrared absorption at belt sides and distinct anisotropy with respect to light polarizations, which is further supported by first-principles calculations. Our work demonstrates for the first time that the infrared spectroscopy can offer a power-efficient approach in experimentally probing 1D edge states of topological materials.

preprint2020arXiv

Review: Progress on 2D topological insulators and potential ap-plications in electronic devices

Two-dimensional topological insulators (2DTI) have attracted increasing attention during the past few years. New 2DTI with increasing larger spin-orbit coupling (SOC) gaps have been predicted by theoretical calculations and some of them have been synthesized experimentally. In this review, the 2DTI, ranging from single element graphene-like materials to bi-elemental TMDs and to multi-elemental materials, with different thicknesses, structures and phases, have been summarized and discussed. The topological properties (especially the quantum spin Hall effect and Dirac fermion feature) and potential applications have been summarized. This review also points out the challenge and opportuni-ties for future 2DTI study, especially on the device applications based on the topological properties.

preprint2020arXiv

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.

preprint2020arXiv

Topological magneto-optical effects and their quantization in noncoplanar antiferromagnets

Reflecting the fundamental interactions of polarized light with magnetic matter, magneto-optical effects are well known since more than a century. The emergence of these phenomena is commonly attributed to the interplay between exchange splitting and spin-orbit coupling in the electronic structure of magnets. Using theoretical arguments, we demonstrate that topological magneto-optical effects can arise in noncoplanar antiferromagnets due to the finite scalar spin chirality, without any reference to exchange splitting or spin-orbit coupling. We propose spectral integrals of certain magneto-optical quantities that uncover the unique topological nature of the discovered effect. We also find that the Kerr and Faraday rotation angles can be quantized in insulating topological antiferromagnets in the low-frequency limit, owing to nontrivial global properties that manifest in quantum topological magneto-optical effects. Although the predicted topological and quantum topological magneto-optical effects are fundamentally distinct from conventional light-matter interactions, they can be measured by readily available experimental techniques.

preprint2020arXiv

Topological Nodal Line Electrides: Realization of Ideal Nodal Line State Nearly Immune from Spin-Orbit Coupling

Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work,we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and electrides simultaneously, provide new insight on designing excellent NLSs nearly immune from SOC. Since the states near the Fermi level are most contributed by nonnucleus-bounded interstitial electrons, nodal lines in TNLEs manifest extremely small SOCinduced gap even possessing heavy elements. Especially, we propose the family of A2B (A = Ca, Sr, Ba; B= As, Sb, Bi) materials are realistic TNLEs with negligible SOC-induced gaps, which can play as excellent platforms to study the intrinsic properties of TNLEs

preprint2020arXiv

Tunable magneto-optical effect, anomalous Hall effect and anomalous Nernst effect in two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$

Utilizing the first-principles density functional theory calculations together with group theory analyses, we systematically investigate the spin order-dependent magneto-optical effect (MOE), anomalous Hall effect (AHE), and anomalous Nernst effect (ANE) in a recently discovered two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$. We find that the spin prefers an in-plane direction by the magnetocrystalline anisotropy energy calculations. The MOE, AHE, and ANE display a period of $2π/3$ when the spin rotates within the atomic plane, and they are forbidden if there exists a mirror plane perpendicular to the spin direction. By reorienting the spin from in-plane to out-of-plane direction, the MOE, AHE, and ANE are enhanced by around one order of magnitude. Moreover, we establish the layer-dependent magnetic properties for multilayer $1T$-CrTe$_2$ and predict antiferromagnetism and ferromagnetism for bilayer and trilayer $1T$-CrTe$_2$, respectively. The MOE, AHE, and ANE are prohibited in antiferromagnetic bilayer $1T$-CrTe$_2$ due to the existence of the spacetime inversion symmetry, whereas all of them are activated in ferromagnetic trilayer $1T$-CrTe$_2$ and the MOE is significantly enhanced compared to monolayer $1T$-CrTe$_2$. Our results show that the magneto-optical and anomalous transports proprieties of $1T$-CrTe$_2$ can be effectively modulated by altering spin direction and layer number.

preprint2020arXiv

Two-dimensional antiferromagnetic Dirac fermions in monolayer TaCoTe$_2$

Dirac point in two-dimensional (2D) materials has been a fascinating subject of research. Recently, it has been theoretically predicted that Dirac point may also be stabilized in 2D magnetic systems. However, it remains a challenge to identify concrete 2D materials which host such magnetic Dirac point. Here, based on first-principles calculations and theoretical analysis, we propose a stable 2D material, the monolayers TaCoTe$_2$, as an antiferromagnetic (AFM) 2D Dirac material. We show that it has an AFM ground state with an out-of-plane Néel vector. It hosts a pair of 2D AFM Dirac points on the Fermi level in the absence of spin-orbit coupling (SOC). When the SOC is considered, a small gap is opened at the original Dirac points. Meanwhile, another pair of Dirac points appear on the Brillouin zone boundary below the Fermi level, which are robust under SOC and have a type-II dispersion. Such a type-II AFM Dirac point has not been observed before. We further show that the location of this Dirac point as well as its dispersion type can be controlled by tuning the Néel vector orientation.

preprint2020arXiv

Type-II topological metals

Topological metals (TMs) are a kind of special metallic materials, which feature nontrivial band crossings near the Fermi energy, giving rise to peculiar quasiparticle excitations. TMs can be classified based on the characteristics of these band crossings. For example, according to the dimensionality of the crossing, TMs can be classified into nodal-point, nodal-line, and nodal-surface metals. Another important property is the type of dispersion. According to degree of the tilt of the local dispersion around the crossing, we have type-I and type-II dispersions. This leads to significant distinctions in the physical properties of the materials, owing to their contrasting Fermi surface topologies. In this article, we briefly review the recent advances in this research direction, focusing on the concepts, the physical properties, and the material realizations of the type-II nodal-point and nodal-line TMs.

preprint2020arXiv

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics.

preprint2020arXiv

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$, suggesting their great potential for valleytronics and spintronics applications.

preprint2019arXiv

Nodal Line Spin-gapless Semimetals and High-quality Candidate Materials

Spin-gapless semimetals (SGSMs), which generate 100\% spin polarization, are viewed as promising semi-half-metals in spintronics with high speed and low consumption. We propose and characterize a new $\mathbb{Z_{\mathrm{2}}}$ class of topological nodal line (TNL) in SGSMs. The proposed TNLSGSMs are protected by space-time inversion symmetry or glide mirror symmetry with two-dimensional (2D) fully spin-polarized nearly flat surface states. Based on first-principles calculations and effective model analysis, a series of high-quality materials with $\textit{R}\overline{3}\textit{c}$ and $\textit{R}{3}\textit{c}$ space groups are predicted to realize such TNLSGSMs (chainlike). The 2D fully spin-polarized nearly flat surface states may provide a route to achieving equal spin pairing topological superconductivity as well as topological catalysts.

preprint2019arXiv

Transport tuning of photonic topological edge states by optical cavities

Crystal-symmetry-protected photonic topological edge states (PTESs) based on air rods in conventional dielectric materials are designed as photonic topological waveguides (PTWs) coupled with side optical cavities. We demonstrate that the cavity coupled with the PTW can change the reflection-free transport of the PTESs, where the cavities with single mode and twofold degenerate modes are taken as examples. The single-mode cavities are able to perfectly reflect the PTESs at their resonant frequencies, forming a dip in the transmission spectra. The dip full width at half depth depends on the coupling strength between the cavity and PTW and thus on the cavity geometry and distance relative to the PTW. While the cavities with twofold degenerate modes lead to a more complex PTES transport whose transmission spectra can be in the Fano form. These effects well agree with the one-dimensional PTW-cavity transport theory we build, in which the coupling of the PTW with cavity is taken as $δ$ or non-$δ$ type. Such PTWs coupled with side cavities, combining topological properties and convenient tunability, have wide diversities for topological photonic devices.

preprint2016arXiv

Borophene as an extremely high capacity electrode material for Li-ion and Na-ion batteries

Two-dimensional (2D) materials as electrodes is believed to be the trend for future Li-ion and Na-ion batteries technologies. Here, by using first-principles methods, we predict that the recently reported borophene (2D born sheet) can serve as an ideal electrode material with high electrochemical performance for both Li-ion and Na-ion batteries. The calculations are performed on the two experimentally stable borophene structures, namely \b{eta}12 and \c{hi}3 structures. The optimized Li and Na adsorption sites are identified, and the host materials are found to maintain good electric conductivity before and after adsorption. Besides advantages including small diffusion barriers and low average open-circuit voltages, most remarkably, the storage capacity can be as high as 1984 mA h g-1 in \b{eta}12 borophene and 1240 mA h g-1 in \c{hi}3 borophene for both Li and Na, which is several times higher than the commercial graphite electrode and is the highest among all the 2D materials discovered to date. Our results highly support that borophenes can be appealing anode materials for both Li-ion and Na-ion batteries with extremely high power density.

preprint2016arXiv

Possible Superconductivity Approaching Ice Point

Recently BCS superconductivity at 203 K has been discovery in a highly compressed hydrogen sulfide. We use first-principles calculations to systematically examine the effects of partially substituting the chalcogen atoms on the superconductivity of hydrogen chalcogenides under high pressures. We find detailed trends of how the critical temperature changes with increasing the V-, VI- or VII-substitution rate, which highlight the key roles played by low atomic mass and by strong covalent metallicity. In particular, a possible record high critical temperature of 280 K is predicted in a stable H3S0.925P0.075 with the Im-3m structure under 250 GPa.

preprint2016arXiv

Predicted Unusual Magnetoresponse in Type-II Weyl Semimetals

We show several distinct signatures in the magneto-response of type-II Weyl semimetals. The energy tilt tends to squeeze the Landau levels (LLs), and for a type-II Weyl node, there always exists a critical angle between the B-fileld and the tilt, at which the LL spectrum collapses, regardless of the fileld strength. Before collapse, signatures also appear in the magneto-optical spectrum, including the invariable presence of intraband peaks, the absence of absorption tails, and the special anisotropic fileld dependence.

preprint2015arXiv

Electric field controlled spin- and valley-polarized edge states in silicene with extrinsic Rashba effect

In the presence of extrinsic Rashba spin-orbit coupling, we find that silicene can host a new quantum anomalous Hall state with spin- and valley-polarized edge states, which can be effectively controlled by the exchange field and electric field. In this new state, the pair of nontrivial edge states reside in one specific valley and have a strong but opposite spin polarization. A distinctive feature of this new state is that both of the spin and valley index of the edge states can be switched by reversing the electric field. We also present a microscopic mechanism for the origination of the new state. Our findings provide an efficient way to control the topologically protected spin- and valley-polarized edge states, which is crucial for spintronics and valleytronics.

preprint2015arXiv

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Atomically thin group-VIB transition metal dichalcogenides (TMDs) have recently emerged as a new class of two-dimensional (2D) semiconductors with extraordinary properties including the direct band gap in the visible frequency range, the pronounced spin-orbit coupling, the ultra-strong Coulomb interaction, and the rich physics associated with the valley degree of freedom. These 2D TMDs exhibit great potentials for device applications and have attracted vast interest for the exploration of new physics. 2D TMDs have complex electronic structures which underlie their physical properties. Here we review the bulk electronic structures in these new 2D materials as well as the theoretical models developed at different levels, along which we sort out the understandings on the origins of a variety of properties observed or predicted.

preprint2015arXiv

Itinerant Ferromagnetism and $p+ip'$ Superconductivity in Doped Bilayer Silicene

We study the electronic instabilities of doped bilayer silicene using the random phase approximation. In contrast to the singlet $d+id'$ superconductivity at the low doping region, we find that the system is an itinerant ferromagnet in the narrow doping regions around the Van Hove singularities, and a triplet $p+ip'$ superconductor in the vicinity of these regions. Adding a weak Kane-Mele spin-orbit coupling to the system further singles out the time-reversal invariant equal-spin helical $p+ip'$ pairing as the leading instability. The triplet pairing identified here is driven by the ferromagnetic fluctuations, which become strong and enhance the superconducting critical temperature remarkably near the phase boundaries between ferromagnetism and superconductivity.

preprint2015arXiv

Large magneto-optical Kerr effect in noncollinear antiferromagnets Mn$_{3}X$ ($X$ = Rh, Ir, or Pt)

Magneto-optical Kerr effect, normally found in magnetic materials with nonzero magnetization such as ferromagnets and ferrimagnets, has been known for more than a century. Here, using first-principles density functional theory, we demonstrate large magneto-optical Kerr effect in high temperature noncollinear antiferromagnets Mn$_{3}X$ ($X$ = Rh, Ir, or Pt), in contrast to usual wisdom. The calculated Kerr rotation angles are large, being comparable to that of transition metal magnets such as bcc Fe. The large Kerr rotation angles and ellipticities are found to originate from the lifting of the band double-degeneracy due to the absence of spatial symmetry in the Mn$_{3}X$ noncollinear antiferromagnets which together with the time-reversal symmetry would preserve the Kramers theorem. Our results indicate that Mn$_{3}X$ would provide a rare material platform for exploration of subtle magneto-optical phenomena in noncollinear magnetic materials without net magnetization.

preprint2015arXiv

Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide Bi$_{4}$Br$_{4}$

Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels protected by the time-reversal symmetry. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of $\sim$0.18 eV, in single-layer Bi$_{4}$Br$_{4}$, which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure. The band gap of single-layer Bi$_{4}$Br$_{4}$ is tunable via strain engineering, and the QSH phase is robust against external strain. In particular, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi$_{4}$Br$_{4}$ could be easily torn to ribbons with clean and atomically sharp edges, which are much desired for the observation and application of topological edge states. Our work thus provides a new promising material for experimental studies and practical applications of QSH effect.

preprint2015arXiv

Possible Electric-Field-Induced Superconducting States in Doped Silicene

Silicene has been synthesized recently, with experimental evidence showing possible superconductivity in the doped case. The noncoplanar low-buckled structure of this material inspires us to study the pairing symmetry of the doped system under a perpendicular external electric field. Our study reveals that the electric field induces an interesting quantum phase transition from the singlet chiral $d + id'$-wave superconducting phase to the triplet $f$-wave one. The emergence of the $f$-wave pairing results from the sublattice-symmetry-breaking caused by the electric field and the ferromagnetic-like intra-sublattice spin correlations at low dopings. Due to the enhanced density of states, the superconducting critical temperature of the system is enhanced by the electric field remarkably. Furthermore, we design a particular dc SQUID experiment to detect the quantum phase transition predicted here. Our results, if confirmed, will inject a new vitality to the familiar Si-based industry through adopting doped silicene as a tunable platform to study different types of exotic unconventional superconductivities.

preprint2015arXiv

Strain effects on electronic and optic properties of monolayer C$_2$N holey two-dimensional crystals

A new two-dimensional material, the C$_2$N holey 2D (C$_2$N-$h$2D) crystal, has recently been synthesized. Here we investigate the strain effects on the properties of this new material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains $\geq 12\%$. It remains a direct gap semiconductor under strain and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8\% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient $\sim10^6$ cm$^{-1}$ covering a wide spectrum. Our findings suggest the great potential of strain-engineered C$_2$N-$h$2D in electronic and optoelectronic device applications.

preprint2015arXiv

Time-reversal-invariant topological superconductivity in n-doped BiH

Intrinsic and symmetry protected topological states have attracted lots of interest in condensed matter physics recently. In particular, time reversal symmetry protected fermion topological insulators have been theoretically predicted and experimentally verified. However despite considerable experimental and theoretical works, definitive evidence for time reversal invariant topological superconductivity is still lacking. Here we propose that upon electron doping the hydrogenated single bilayer Bi, namely BiH, will exhibit time reversal invariant topological superconductivity. If confirmed experimentally this material will constitute the first example of TRI topological superconductor.

preprint2015arXiv

Topological magnetic phase in LaMnO$_3$ (111) bilayer

Candidates for correlated topological insulators, originated from the spin-orbit coupling as well as Hubbard type correlation, are expected in the ($111$) bilayer of perovskite-structural transition-metal oxides. Based on the first-principles calculation and tight-binding model, the electronic structure of a LaMnO$_3$ ($111$) bilayer sandwiched in LaScO$_3$ barriers has been investigated. For the ideal undistorted perovskite structure, the Fermi energy of LaMnO$_3$ ($111$) bilayer just stays at the Dirac point, rendering a semi-metal (graphene-like) which is also a half-metal (different from graphene nor previous studied LaNiO$_3$ ($111$) bilayer). The Dirac cone can be opened by the spin-orbit coupling, giving rise to nontrivial topological bands corresponding to the (quantized) anomalous Hall effect. For the realistic orthorhombic distorted lattice, the Dirac point moves with increasing Hubbard repulsion (or equivalent Jahn-Teller distortion). Finally, a Mott gap opens, establishing a phase boundary between the Mott insulator and topological magnetic insulator. Our calculation finds that the gap opened by spin-orbit coupling is much smaller in the orthorhombic distorted lattice ($\sim$$1.7$ meV) than the undistorted one ($\sim$$11$ meV). Therefore, to suppress the lattice distortion can be helpful to enhance the robustness of topological phase in perovskite ($111$) bilayers.

preprint2015arXiv

Topological p+ip superconductivity in doped graphene-like single-sheet materials BC$_3$

We theoretically study exotic superconducting phases in graphenelike single-sheet material BC$_3$ doped to its type-II Van Hove singularity whose saddle point momenta are {\it not} time-reversal-invariant. From combined renormalization group analysis and RPA calculations, we show that the dominant superconducting instability induced by weak repulsive interactions is in the time-reversal-invariant $p+ip$ pairing channel because of the interplay among dominant ferromagnetic fluctuations, subleading spin fluctuations at finite momentum, and spin-orbit coupling. Such time-reversal-invariant $p+ip$ superconductivity has nontrivial $\mathbb{Z}_2$ topological invariant. Our results show that doped BC$_3$ provides a promising route to realize a genuine 2D helical $p+ip$ superconductor.

preprint2015arXiv

Valley-polarized quantum anomalous Hall phases and tunable topological phase transitions in half-hydrogenated Bi honeycomb monolayers

Based on first-principles calculations, we find novel valley-polarized quantum anomalous Hall (VP-QAH) phases with a large gap-0.19 eV at an appropriate buckled angle and tunable topological phase transitions driven by the spontaneous magnetization within a half-hydrogenated Bi honeycomb monolayer. Depending on the magnetization orientation, four different phases can emerge, i.e., two VP-QAH phases, ferromagnetic insulating and metallic states. When the magnetization is reversed from the +$\mathbf{z}$ to -$\mathbf{z}$ directions, accompanying with a sign change in the Chern number (from -1 to +1), the chiral edge state is moved from valley $K$ to $K'$. Our findings provide a platform for designing dissipationless electronics and valleytronics in a more robust manner through the tuning of the magnetization orientation.

preprint2015arXiv

Weak Topological Insulators and Composite Weyl Semimetals: $β$-Bi$_{4}$X$_{4}$ (X=Br, I)

While strong topological insulators (STI) have been experimentally realized soon after their theoretical predictions, a weak topological insulator (WTI) has yet to be unambiguously confirmed. A major obstacle is the lack of distinct natural cleavage surfaces to test the surface selective hallmark of WTI. With a new scheme, we discover that Bi$_{4}$X$_{4}$ (X=Br, I), stable or synthesized before, can be WTI with two natural cleavage surfaces, where two anisotropic Dirac cones stabilize and annihilate, respectively. We further find four surface state Lifshitz transitions under charge doping and two bulk topological phase transitions under uniaxial strain. Near the WTI-STI transition, there emerges a novel Weyl semimetal phase, in which the Fermi arcs generically appear at both cleavage surfaces whereas the Fermi circle only appears at one selected surface.

preprint2014arXiv

Effect of modulations of doping and strain on the electron transport in monolayer MoS_2

The doping and strain effects on the electron transport of monolayer MoS_2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm^2/(Vs) in the low doping level under the strain-free condition. The applying a small strain (3%) can improve the maximum mobility to 1150 cm^2/(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transition between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS_2.

preprint2014arXiv

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a unique approach to create the large-gap 2D TI state on a semiconductor surface, based on first-principles calculations and effective Hamiltonian analysis. We show that when heavy elements with strong spin orbit coupling (SOC) such as Bi and Pb atoms are deposited on a patterned H-Si(111) surface into a hexagonal lattice, they exhibit a 2D TI state with a large energy gap of over 0.5 eV. The TI state arises from an intriguing substrate orbital filtering effect that selects a suitable orbital composition around the Fermi level, so that the system can be matched onto a four-band effective model Hamiltonian. Furthermore, it is found that within this model, the SOC gap does not increase monotonically with the increasing strength of SOC. These interesting results may shed new light in future design and fabrication of large-gap topological quantum states.

preprint2014arXiv

Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides

Monolayer transition metal dichalcogenides (TMDs) offer new opportunities for realizing quantum dots (QDs) in the ultimate two-dimensional (2D) limit. Given the rich control possibilities of electron valley pseudospin discovered in the monolayers, this quantum degree of freedom can be a promising carrier of information for potential quantum spintronics exploiting single electrons in TMD QDs. An outstanding issue is to identify the degree of valley hybridization, due to the QD confinement, which may significantly change the valley physics in QDs from its form in the 2D bulk. Here we perform a systematic study of the intervalley coupling by QD confinement potentials on extended TMD monolayers. We find that the intervalley coupling in such geometry is generically weak due to the vanishing amplitude of the electron wavefunction at the QD boundary, and hence valley hybridization shall be well quenched by the much stronger spin-valley coupling in monolayer TMDs and the QDs can well inherit the valley physics of the 2D bulk. We also discover sensitive dependence of intervalley coupling strength on the central position and the lateral length scales of the confinement potentials, which may possibly allow tuning of intervalley coupling by external controls

preprint2014arXiv

Low-Energy Effective Hamiltonian for Giant-Gap Quantum Spin Hall Insulators in Honeycomb X-Hydride/Halide (X=N-Bi) Monolayers

Using the tight-binding method in combination with first-principles calculations, we systematically derive a low-energy effective Hilbert subspace and Hamiltonian with spin-orbit coupling for two-dimensional hydrogenated and halogenated group-V monolayers. These materials are proposed to be giant-gap quantum spin Hall insulators with record huge bulk band gaps opened by the spin-orbit coupling at the Dirac points, e.g., from 0.74 to 1.08 eV in Bi\textit{X} (\textit{X} = H, F, Cl, and Br) monolayers. We find that the low-energy Hilbert subspace mainly consists of $p_{x}$ and $p_{y}$ orbitals from the group-V elements, and the giant first-order effective intrinsic spin-orbit coupling is from the on-site spin-orbit interaction. These features are quite distinct from those of group-IV monolayers such as graphene and silicene. There, the relevant orbital is $p_z$ and the effective intrinsic spin-orbit coupling is from the next-nearest-neighbor spin-orbit interaction processes. These systems represent the first real 2D honeycomb lattice materials in which the low-energy physics is associated with $p_{x}$ and $p_{y}$ orbitals. A spinful lattice Hamiltonian with an on-site spin-orbit coupling term is also derived, which could facilitate further investigations of these intriguing topological materials.

preprint2014arXiv

Probing the Topological Phase Transition via Density Oscillations in Silicene and Germanene

We theoretically investigated two kinds of density oscillations: the Friedel oscillation and collective excitation in the silicene and germanene within random phase approximation, and found that the tunable spin-valley coupled band structure could lead to some exotic properties in such two phenomena. Based on the exact analytical and numerical analysis, we demonstrated that the beating of screened potential as well as the undamped plasmon mode can be taken as fingerprints of topological phase transition in doped silicene and doped germanene. Thus our proposal here establishes the connection between the topological phase transition and the density oscillations that can be accessed by a variety of experimental techniques.

preprint2014arXiv

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap

Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room temperature (RT). Based on the first-principles calculations, here we predict a group of 2D topological insulators BiX/SbX (X = H, F, Cl, and Br) monolayers with extraordinarily large bulk gaps from 0.32 to a record value of 1.08 eV. These giant-gaps are entirely due to the result of strong spin-orbit interaction related to px and py orbitals of Bi/Sb atoms around the two valley K and K' of honeycomb lattice, which is different significantly from the one consisted of pz orbital just like in graphene/silicene. The topological characteristic of BiX/SbX monolayers is confirmed by the calculated nontrivial Z2 index and an explicit construction of the low energy effective Hamiltonian in these systems. We show that the honeycomb structures of BiX monolayers remain stable even at a temperature of 600 K. These features make the giant-gap TIs BiX/SbX monolayers an ideal platform to realize many exotic phenomena and fabricate new quantum devices operating at RT. Furthermore, biased BiX/SbX monolayers become a quantum valley Hall insulator, showing valley-selective circular dichroism.

preprint2014arXiv

Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly contributed by the $d_{z^{2}}$, $d_{xy}$, and $d_{x^{2}-y^{2}}$ orbitals of $M$ atoms, the TB model is constructed using these three orbitals based on the symmetries of the monolayers. Parameters of the TB model are fitted from the first-principles energy bands for all $MX_2$ monolayers. The TB model involving only the nearest-neighbor $M$-$M$ hoppings is sufficient to capture the band-edge properties in the $\pm K$ valleys, including the energy dispersions as well as the Berry curvatures. The TB model involving up to the third-nearest-neighbor $M$-$M$ hoppings can well reproduce the energy bands in the entire Brillouin zone. Spin-orbit coupling in valence bands is well accounted for by including the on-site spin-orbit interactions of $M$ atoms. The conduction band also exhibits a small valley-dependent spin splitting which has an overall sign difference between Mo$X_{2}$ and W$X_{2}$. We discuss the origins of these corrections to the three-band model. The three-band TB model developed here is efficient to account for low-energy physics in $MX_2$ monolayers, and its simplicity can be particularly useful in the study of many-body physics and physics of edge states.

preprint2014arXiv

Topological edge states in single- and multi-layer Bi$_{4}$Br$_{4}$

Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH insulator materials, e.g., large band gap, appropriate insulating substrates, and multiple conducting channels. In this paper, based on first-principle calculations, we show that Bi$_{4}$Br$_{4}$ is a suitable candidate. Single-layer Bi$_{4}$Br$_{4}$ was demonstrated to be QSH insulator with sizable gap recently. Here, we find that, in multilayer systems, both the band gaps and low-energy electronic structures are only slightly affected by the interlayer coupling. On the intrinsic insulating substrate of Bi$_{4}$Br$_{4}$, the single-layer Bi$_{4}$Br$_{4}$ well preserves its topological edge states. Moreover, at the boundary of multilayer Bi$_{4}$Br$_{4}$, the topological edge states stemming from different single-layers are weakly coupled, and can be fully decoupled via constructing a stair-stepped edge. The decoupled topological edge states are well suitable for multi-channel dissipationless transport.

preprint2014arXiv

Topological metallic states in spin-orbit coupled bilayer systems

We investigate the influence of different spin-orbit couplings on topological phase transitions in the bilayer Kane-Mele model. We find that the competition between intrinsic spin-orbit coupling and Rashba spin-orbit coupling can lead to two dimensional topological metallic states with nontrivial topology. Such phases, although having a metallic bulk, still possess edge states with well-defined topological invariants. Specifically, we show that with preserved time reversal symmetry, the system can exhibit a $\mathbb{Z}_2$-metallic phase with spin helical edge states and a nontrivial $\mathbb{Z}_2$ invariant. When time reversal symmetry is broken, a Chern metallic phase could appear with chiral edge states and a nontrivial Chern invariant.

preprint2014arXiv

Valley-polarized quantum anomalous Hall phase and disorder induced valley-filtered chiral edge channels

We investigate the topological and transport properties of the recently discovered valley-polarized quantum anomalous Hall (VQAH) phase. In single layer, the phase is realized through the competition between two types of spin-orbit coupling, which breaks the symmetry between the two valleys. We show that the topological phase transition from conventional quantum anomalous Hall phase to the VQAH phase is due to the change of topological charges with the generation of additional skyrmions in the real spin texture, when the band gap closes and reopens at one of the valleys. In the presence of short range disorders, pairs of the gapless edge channels (one from each valley in a pair) would be destroyed due to intervalley scattering. However, we discover that in an extended range of moderate scattering strength, the transport through the system is quantized and fully valley-polarized, i.e. the system is equivalent to a quantum anomalous Hall system with valley-filtered chiral edge channels. We further show that with additional layer degree of freedom, much richer phase diagram could be realized with multiple VQAH phases. For a bilayer system, we demonstrate that topological phase transitions could be controlled by the interlayer bias potential.

preprint2013arXiv

d+id' Chiral Superconductivity in Bilayer Silicene

We investigate the structure and physical properties of the undoped bilayer silicene through first-principles calculations and find the system is intrinsically metallic with sizable pocket Fermi surfaces. When realistic electron-electron interaction turns on, the system is identified as a chiral d+id' topological superconductor mediated by the strong spin fluctuation on the border of the antiferromagnetic spin density wave order. Moreover, the tunable Fermi pocket area via strain makes it possible to adjust the spin density wave critical interaction strength near the real one and enables a high superconducting critical temperature.

preprint2013arXiv

Electronic Structures of Graphene Layers on Metal Foil: Effect of Point Defects

Here we report a facile method to generate a high density of point defects in graphene on metal foil and show how the point defects affect the electronic structures of graphene layers. Our scanning tunneling microscopy (STM) measurements, complemented by first principle calculations, reveal that the point defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering. Additionally, our analysis further points out that periodic point defects can tailor the electronic properties of graphene by introducing a significant bandgap, which opens an avenue towards all-graphene electronics.

preprint2013arXiv

Engineering Topological Surface States and Giant Rashba Spin Splitting in BiTeI/Bi$_2$Te$_3$ Heterostructures

The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a large Rashba spin-splitting (RSS) in such materials, which combined with the topological surface states (TSS) could lead to useful spintronics applications. In this report, based on first principles calculations, we predict that the heterostructure of BiTeI/Bi$_{2}$Te$_{3}$ is a strong topological insulator with a giant RSS. The coexistence of TSS and RSS in the current system is native and stable. More importantly, we find that both the $\mathbb{Z}_{2}$ invariants and the Rashba energy can be controlled by engineering the layer geometries of the heterostructure, and the Rashba energy can be made even larger than that of bulk BiTeI. Our work opens a new route for designing topological spintronics devices based on inversion asymmetric heterostructures.

preprint2013arXiv

Observation of Dirac cone warping and chirality effects in silicene

We performed low temperature scanning tunneling microscopy (STM) and spectroscopy (STS) studies on the electronic properties of (R3xR3)R30° phase of silicene on Ag(111) surface. We found the existence of Dirac Fermion chirality through the observation of -1.5 and -1.0 power law decay of quasiparticle interference (QPI) patterns. Moreover, in contrast to the trigonal warping of Dirac cone in graphene, we found that the Dirac cone of silicene is hexagonally warped, which is further confirmed by density functional calculations and explained by the unique superstructure of silicene. Our results demonstrate that the (R3xR3)R30° phase is an ideal system to investigate the unique Dirac Fermion properties of silicene.

preprint2013arXiv

Phonon-mediated Superconductivity in Silicene

We predict that electron-doped silicene is a good two-dimensional electron-phonon superconductor under biaxial tensile strain by first-principles calculations within rigid band approximation. Superconductivity transition temperature of electron-doped silicene can be increased to be above 10 K by 5% tensile strain. Band structures, phonon dispersive relations, and Eliashberg functions are calculated for detailed analysis. The strong interaction between acoustic phonon modes normal to the silicene plane and the increasing electronic states around the Fermi level induced by tensile strain is mainly responsible for the enhanced critical temperature.

preprint2013arXiv

Stability, Electronic and Magnetic properties of magnetically doped topological insulators Bi2Se3, Bi2Te3 and Sb2Te3

Magnetic interaction with the gapless surface states in topological insulator (TI) has been predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic doping of TI is still challenging in experiment. Using first-principles calculations, the magnetic doping properties (V, Cr, Mn and Fe) in three strong TIs (Bi$_{2}$Se$_{3}$, Bi$_{2}$Te$_{3}$ and Sb$_{2}$Te$_{3}$) are investigated. We find that for all three TIs the cation-site substitutional doping is most energetically favorable with anion-rich environment as the optimal growth condition. Further our results show that under the nominal doping concentration of 4%, Cr and Fe doped Bi$_{2}$Se$_{3}$, Bi$_{2}$Te$_{3}$, and Cr doped Sb$_{2}$Te$_{3}$ remain as insulator, while all TIs doped with V, Mn and Fe doped Sb$_{2}$Te$_{3}$ become metal. We also show that the magnetic interaction of Cr doped Bi$_{2}$Se$_{3}$ tends to be ferromagnetic, while Fe doped Bi$_{2}$Se$_{3}$ is likely to be antiferromagnetic. Finally, we estimate the magnetic coupling and the Curie temperature for the promising ferromagnetic insulator (Cr doped Bi$_{2}$Se$_{3}$) by Monte Carlo simulation. These findings may provide important guidance for the magnetism incorporation in TIs experimentally.

preprint2013arXiv

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic properties of doped Bi2Se3 are studied using first-principles calculations within density functional theory. Our results show that Bi substitutional sites are energetically more favorable than interstitial sites for single impurities. Detailed electronic structure analysis reveals that Cr and Fe doped materials are still insulating in the bulk but the intrinsic band gap of Bi2Se3 is substantially reduced due to the strong hybridization between the d states of the dopants and the p states of the neighboring Se atoms. The calculated magnetic coupling suggests that Cr doped Bi2Se3 is possible to be both ferromagnetic and insulating, while Fe doped Bi2Se3 tends to be weakly antiferromagnetic.

preprint2013arXiv

Valley-Polarized Quantum Anomalous-Hall Effects in Silicene

We demonstrate a new quantum state of matter---valley-polarized quantum anomalous Hall effect in monolayer silicene. In the presence of extrinsic Rashba spin-orbit coupling and exchange field, monolayer silicene can host a quantum anomalous-Hall state with Chern number C=2. We find that through tuning Rashba spin-orbit coupling, a topological phase transition gives rise to a valley polarized quantum anomalous Hall state, i.e. a quantum state which exhibits electronic properties of both quantum valley-Hall effect (valley Chern number C_V=3) and quantum anomalous Hall effect with C=-1.

preprint2012arXiv

Evidence for Dirac Fermions in a honeycomb lattice based on silicon

Silicene, a sheet of silicon atoms in a honeycomb lattice, was proposed to be a new Dirac-type electron system similar as graphene. We performed scanning tunneling microscopy and spectroscopy studies on the atomic and electronic properties of silicene on Ag(111). An unexpected $\sqrt{3}\times \sqrt{3}$ reconstruction was found, which is explained by an extra-buckling model. Pronounced quasi-particle interferences (QPI) patterns, originating from both the intervalley and intravalley scattering, were observed. From the QPI patterns we derived a linear energy-momentum dispersion and a large Fermi velocity, which prove the existence of Dirac Fermions in silicene.

preprint2012arXiv

Evidence of silicene in honeycomb structures of silicon on Ag(111)

In the search for evidence of silicene, a two-dimensional honeycomb lattice of silicon, it is important to obtain a complete picture for the evolution of Si structures on Ag(111), which is believed to be the most suitable substrate for growth of silicene so far. In this work we report the finding and evolution of several monolayer superstructures of silicon on Ag(111) depending on the coverage and temperature. Combined with first-principles calculations, the detailed structures of these phases have been illuminated. These structure were found to share common building blocks of silicon rings, and they evolve from a fragment of silicene to a complete monolayer silicene and multilayer silicene. Our results elucidate how silicene formes on Ag(111) surface and provide methods to synthesize high-quality and large-scale silicene.

preprint2012arXiv

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Using first-principles calculations within density functional theory, we investigate the intrinsic spin Hall effect in monolayers of group-VI transition-metal dichalcogenides MX2 (M = Mo, W and X = S, Se). MX2 monolayers are direct band-gap semiconductors with two degenerate valleys located at the corners of the hexagonal Brillouin zone. Because of the inversion symmetry breaking and the strong spin-orbit coupling, charge carriers in opposite valleys carry opposite Berry curvature and spin moment, giving rise to both a valley- and a spin-Hall effect. The intrinsic spin Hall conductivity (ISHC) in p-doped samples is found to be much larger than the ISHC in n-doped samples due to the large spin-splitting at the valence band maximum. We also show that the ISHC in inversion-symmetric bulk dichalcogenides is an order of magnitude smaller compared to monolayers. Our result demonstrates monolayer dichalcogenides as an ideal platform for the integration of valleytronics and spintronics.

preprint2012arXiv

Microscopic theory of quantum anomalous Hall effect in graphene

We present a microscopic theory to give a physical picture of the formation of quantum anomalous Hall (QAH) effect in graphene due to a joint effect of Rashba spin-orbit coupling $λ_R$ and exchange field $M$. Based on a continuum model at valley $K$ or $K'$, we show that there exist two distinct physical origins of QAH effect at two different limits. For $M/λ_R\gg1$, the quantization of Hall conductance in the absence of Landau-level quantization can be regarded as a summation of the topological charges carried by Skyrmions from real spin textures and Merons from \emph{AB} sublattice pseudo-spin textures; while for $λ_R/M\gg1$, the four-band low-energy model Hamiltonian is reduced to a two-band extended Haldane's model, giving rise to a nonzero Chern number $\mathcal{C}=1$ at either $K$ or $K'$. In the presence of staggered \emph{AB} sublattice potential $U$, a topological phase transition occurs at $U=M$ from a QAH phase to a quantum valley-Hall phase. We further find that the band gap responses at $K$ and $K'$ are different when $λ_R$, $M$, and $U$ are simultaneously considered. We also show that the QAH phase is robust against weak intrinsic spin-orbit coupling $λ_{SO}$, and it transitions a trivial phase when $λ_{SO}>(\sqrt{M^2+λ^2_R}+M)/2$. Moreover, we use a tight-binding model to reproduce the ab-initio method obtained band structures through doping magnetic atoms on $3\times3$ and $4\times4$ supercells of graphene, and explain the physical mechanisms of opening a nontrivial bulk gap to realize the QAH effect in different supercells of graphene.

preprint2012arXiv

Strain tuning of topological band order in cubic semiconductors

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

preprint2012arXiv

Theory of orbital magnetization in disordered systems

We present a general formula of the orbital magnetization of disordered systems based on the Keldysh Green's function theory in the gauge-covariant Wigner space. In our approach, the gauge invariance of physical quantities is ensured from the very beginning, and the vertex corrections are easily included. Our formula applies not only for insulators but also for metallic systems where the quasiparicle behavior is usually strongly modified by the disorder scattering. In the absence of disorders, our formula recovers the previous results obtained from the semiclassical theory and the perturbation theory. As an application, we calculate the orbital magnetization of a weakly disordered two-dimensional electron gas with Rashba spin-orbit coupling. We find that for the short range disorder scattering, its major effect is to the shifting of the distribution of orbital magnetization corresponding to the quasiparticle energy renormalization.

preprint2012arXiv

Three-dimensional topological insulators: A review on host materials

In recent years, three-dimensional topological insulators (3DTI) as a novel state of quantum matter have become a hot topic in the fields of condensed matter physics and materials sciences. To fulfill many spectacularly novel quantum phenomena predicted in 3DTI, real host materials are of crucial importance. In this review paper, we first introduce general methods of searching for new 3DTI based on the density-functional theory. Then, we review the recent progress on materials realization of 3DTI including simple elements, binary compounds, ternary compounds, and quaternary compounds. In these potential host materials, some of them have already been confirmed by experiments while the others are not yet. The 3DTI discussed here does not contain the materials with strong electron-electron correlation. Lastly, we give a brief summary and some outlooks in further studies.

preprint2012arXiv

Topological phases in gated bilayer graphene: Effects of Rashba spin-orbit coupling and exchange field

We present a systematic study on the influence of Rashba spin-orbit coupling, interlayer potential difference and exchange field on the topological properties of bilayer graphene. In the presence of only Rashba spin-orbit coupling and interlayer potential difference, the band gap opening due to broken out-of-plane inversion symmetry offers new possibilities of realizing tunable topological phase transitions by varying an external gate voltage. We find a two-dimensional $Z_2$ topological insulator phase and a quantum valley Hall phase in $AB$-stacked bilayer graphene and obtain their effective low-energy Hamiltonians near the Dirac points. For $AA$ stacking, we do not find any topological insulator phase in the presence of large Rashba spin-orbit coupling. When the exchange field is also turned on, the bilayer system exhibits a rich variety of topological phases including a quantum anomalous Hall phase, and we obtain the phase diagram as a function of the Rashba spin-orbit coupling, interlayer potential difference, and exchange field.

preprint2011arXiv

First-principles calculation of topological invariants Z2 within the FP-LAPW formalism

In this paper, we report the implementation of first-principles calculations of topological invariants Z2 within the full-potential linearized augmented plane-wave (FP-LAPW) formalism. In systems with both time-reversal and spatial inversion symmetry (centrosymmetric), one can use the parity analysis of Bloch functions at time-reversal invariant momenta to determine the Z2 invariants. In systems without spatial inversion symmetry (noncentrosymmetric), however, a more complex and systematic method in terms of the Berry gauge potential and the Berry curvature is required to identify the band topology. We show in detail how both methods are implemented in FP-LAPW formalism and applied to several classes of materials including centrosymmetric compounds Bi2Se3 and Sb2Se3 and noncentrosymmetric compounds LuPtBi, AuTlS2 and CdSnAs2. Our work provides an accurate and effective implementation of first-principles calculations to speed up the search of new topological insulators.

preprint2011arXiv

Low-energy effective Hamiltonian involving spin-orbit coupling in Silicene and Two-Dimensional Germanium and Tin

Starting from the symmetry aspects and tight-binding method in combination with first-principles calculation, we systematically derive the low-energy effective Hamiltonian involving spin-orbit coupling (SOC) for silicene, which is very general because this Hamiltonian applies to not only the silicene itself but also the low-buckled counterparts of graphene for other group IVA elements Ge and Sn, as well as graphene when the structure returns to the planar geometry. The effective Hamitonian is the analogue to the first graphene quantum spin Hall effect (QSHE) Hamiltonian. Similar to graphene model, the effective SOC in low-buckled geometry opens a gap at Dirac points and establishes QSHE. The effective SOC actually contains first order in the atomic intrinsic SOC strength $ξ_{0}$, while such leading order contribution of SOC vanishes in planar structure. Therefore, silicene as well as low-buckled counterparts of graphene for other group IVA elements Ge and Sn has much larger gap opened by effective SOC at Dirac points than graphene due to low-buckled geometry and larger atomic intrinsic SOC strength. Further, the more buckled is the structure, the greater is the gap. Therefore, QSHE can be observed in low-buckled Si, Ge, and Sn systems in an experimentally accessible temperature regime. In addition, the Rashba SOC in silicene is intrinsic due to its own low-buckled geometry, which vanishes at Dirac point $K$, while has nonzero value with $\vec{k}$ deviation from the $K$ point. Therefore, the QSHE in silicene is robust against to the intrinsic Rashba SOC.

preprint2011arXiv

Magnetic and Electronic Properties of Metal-Atom Adsorbed Graphene

We systematically investigate the magnetic and electronic properties of graphene adsorbed with diluted 3d-transition and noble metal atoms using first principles calculation methods. We find that most transition metal atoms (i.e. Sc, Ti, V, Mn, Fe) favor the hollow adsorption site, and the interaction between magnetic adatoms and π-orbital of graphene induces sizable exchange field and Rashba spin-orbit coupling, which together open a nontrivial bulk gap near the Dirac points leading to the quantum-anomalous Hall effect. We also find that the noble metal atoms (i.e. Cu, Ag, Au) prefer the top adsorption site, and the dominant inequality of the AB sublattice potential opens another kind of nontrivial bulk gap exhibiting the quantum-valley Hall effect.

preprint2011arXiv

Quantum Anomalous Hall Effect in Single-layer and Bilayer Graphene

The quantum anomalous Hall effect can occur in single and few layer graphene systems that have both exchange fields and spin-orbit coupling. In this paper, we present a study of the quantum anomalous Hall effect in single-layer and gated bilayer graphene systems with Rashba spin-orbit coupling. We compute Berry curvatures at each valley point and find that for single-layer graphene the Hall conductivity is quantized at $σ_{xy} = 2e^2/h$, with each valley contributing a unit conductance and a corresponding chiral edge state. In bilayer graphene, we find that the quantized anomalous Hall conductivity is twice that of the single-layer case when the gate voltage $U$ is smaller than the exchange field $M$, and zero otherwise. Although the Chern number vanishes when $U > M$, the system still exhibits a quantized valley Hall effect, with the edge states in opposite valleys propagating in opposite directions. The possibility of tuning between different topological states with an external gate voltage suggests possible graphene-based spintronics applications.

preprint2011arXiv

Quantum Spin Hall Effect in Silicene

Recent years have witnessed great interest in the quantum spin Hall effect (QSHE) which is a new quantum state of matter with nontrivial topological property due to the scientific importance as a novel quantum state and the technological applications in spintronics. Taking account of Si, Ge significant importance as semiconductor material and intense interest in the realization of QSHE for spintronics, here we investigate the spin-orbit opened energy gap and the band topology in recently synthesized silicene using first-principles calculations. We demonstrate that silicene with topologically nontrivial electronic structures can realize QSHE by exploiting adiabatic continuity and direct calculation of the Z2 topological invariant. We predict that QSHE in silicene can be observed in an experimentally accessible low temperature regime with the spin-orbit band gap of 1.55 meV, much higher than that of graphene due to large spin-orbit coupling and the low-buckled structure. Furthermore, we find that the gap will increase to 2.90 meV under certain pressure strain. Finally, we also study germanium with similar low buckled stable structure, and predict that SOC opens a band gap of 23.9 meV, much higher than the liquid nitrogen temperature.

preprint2011arXiv

Singular Effects of Spin-Flip Scattering on Gapped Dirac Fermions

We investigate the effects of spin-flip scattering on the Hall transport and spectral properties of gapped Dirac fermions. We find that in the weak scattering regime, the Berry curvature distribution is dramatically compressed in the electronic energy spectrum, becoming singular at band edges. As a result the Hall conductivity has a sudden jump (or drop) of $e^2/2h$ when the Fermi energy sweeps across the band edges, and otherwise is a constant quantized in units of $e^2/2h$. In parallel, spectral properties such as the density of states and spin polarization are also greatly enhanced at band edges. Possible experimental methods to detect these effects are discussed.

preprint2011arXiv

Spin Polarized and Valley Helical Edge Modes in Graphene Nanoribbons

Inspired by recent progress in fabricating precisely zigzag-edged graphene nanoribbons and the observation of edge magnetism, we find that spin polarized edge modes with well-defined valley index can exist in a bulk energy gap opened by a staggered sublattice potential such as that provided by a hexagonal Boron-Nitride substrate. Our result is obtained by both tight-binding model and first principles calculations. These edge modes are helical with respect to the valley degree of freedom, and are robust against scattering, as long as the disorder potential is smooth over atomic scale, resulting from the protection of the large momentum separation of the valleys.

preprint2011arXiv

Topological Aspect and Quantum Magnetoresistance of $β$-Ag$_2$Te

To explain the unusual non-saturating linear magnetoresistance observed in silver chalcogenides, the quantum scenario has been proposed based on the assumption of gapless linear energy spectrum. Here we show, by first principles calculations, that $β$-Ag$_2$Te with distorted anti-fluorite structure is in fact a topological insulator with gapless Dirac-type surface states. The characteristic feature of this new binary topological insulator is the highly anisotropic Dirac cone, in contrast to known examples, such as Bi$_2$Te$_3$ and Bi$_2$Se$_3$. The Fermi velocity varies an order of magnitude by rotating the crystal axis.

preprint2011arXiv

Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene

We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall insulator for small Rashba SO coupling $λ_{\mathrm{R}}$, and transitions to a strong TI when $λ_{\mathrm{R}} > \sqrt{U^2+t_\bot^2}$, where $U$ and $t_\bot$ are respectively the interlayer potential and tunneling energy. Different from a conventional quantum spin Hall state, the edge modes of our strong TI phase exhibit both spin and valley filtering, and thus share the properties of both quantum spin Hall and quantum valley Hall insulators. The strong TI phase remains robust in the presence of weak graphene intrinsic SO coupling.

preprint2010arXiv

Density functional study of weak ferromagnetism in a thick BiCrO3 film

Very thick films of BiCrO$_3$ have been grown on a SrTiO$_3$ substrate, maintaining a tetragonal lattice up to thicknesses of 14,000Å. Assuming we can treat films of this thickness as bulk crystals, we first calculated the experimentally undetermined atomic positions within the unit cell with the measured lattice constant of the film, then relaxed the lattice constants along with the atomic positions. All the calculations result in an antiferroelectric crystal with the {\it Pnma} space group with noncollinear Bi displacements. We find G-type antiferromagnetism with a spin-orbit induced weak ferromagnetic component, however, the weak ferromagnetic component can cancel if the antiferromagnetic spins are oriented along a particular one of the three 2-fold rotation axes.

preprint2010arXiv

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a bandgap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.

preprint2010arXiv

Half-Heusler Topological Insulators: A First-Principle Study with the Tran-Blaha Modified Becke-Johnson Density Functional

We systematically investigate the topological band structures of half-Heusler compounds using first-principles calculations. The modified Becke-Johnson exchange potential together with local density approximation for the correlation potential (MBJLDA) has been used here to obtain accurate band inversion strength and band order. Our results show that a large number of half-Heusler compounds are candidates for three-dimensional topological insulators. The difference between band structures obtained using the local density approximation (LDA) and MBJLDA potential is also discussed.

preprint2010arXiv

Investigation of Magnetic Transport Properties by Wannier Interpolation

We present an efficient {\it ab initio} approach for the study of magnetic transport properties based on the Boltzmann equation with the Wannier interpolation scheme. Within the relaxation time approximation, band-resolved electric conductivity under a finite magnetic field is obtained and the historical motion of the electron wave packet in reciprocal space is determined. As a typical application of this method, we have calculated the electric conductivities of MgB$_2$ under finite magnetic fields. Multiband characters for the individual bands are revealed, and the field dependence of the conductivity tensor is studied systematically with the field orientated parallel and normal to the $c$-axis, respectively. The obtained historical motion is employed to simulate directly the cyclotron motion in the extremal orbit and determine the corresponding effective mass. Moreover, This approach is further exploited to calculate the Hall coefficient in the low-field limit, without the complicated computation for the second ${\mathbf k}$ derivative of the band.

preprint2010arXiv

Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects

We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a non-zero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result.

preprint2010arXiv

Scattering universality classes of side jump in anomalous Hall effect

The anomalous Hall conductivity has an important extrinsic contribution known as side jump contribution, which is independent of both scattering strength and disorder density. Nevertheless, we discover that side jump has strong dependence on the spin structure of the scattering potential. We propose three universality classes of scattering for the side jump contribution, having the characters of being spin-independent, spin-conserving and spin-flip respectively. For each individual class, the side jump contribution takes a different unique value. When two or more classes of scattering are present, the value of side jump is no longer fixed but varies as a function of their relative disorder strength. As system control parameter such as temperature changes, due to the competition between different classes of disorder scattering, the side jump Hall conductivity could flow from one class dominated limit to another class dominated limit. Our result indicates that magnon scattering plays a role distinct from normal impurity scattering and phonon scattering in the anomalous Hall effect because they belong to different scattering classes.

preprint2010arXiv

Three-Dimensional Topological Insulators in I-III-VI$_2$ and II-IV-V$_2$ Chalcopyrite Semiconductors

The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science. A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity, which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI$_2$ and II-IV-V$_2$ can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors, and particularly their ability to host room-temperature ferromagnetism, make them appealing candidates for novel spintronic devices.

Yugui Yao

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98 published item(s)

Open quantum theory of magnetoresistance in mesoscopic magnetic materials

A Theory of Anisotropic Magnetoresistance in Altermagnets and Its Applications

Nonvolatile optical control of interlayer stacking order in 1T-TaS2

Pressure-Induced Superconductivity in Topological Heterostructure (PbSe)5(Bi2Se3)6

A phonon irreducible representations calculator

Band tilt induced nonlinear Nernst effect in topological insulators: An efficient generation of high-performance spin polarization

Carrier Injection and Manipulation of Charge-Density Wave in Kagome Superconductor CsV3Sb5

Disorder- and Topology-Enhanced Fully Spin-Polarized Currents in Nodal Chain Spin-Gapless Semimetals

Giant second-order nonlinearity in twisted bilayer graphene

Inventory of high-quality flat-band van der Waals materials

Local Plastic Response and Slow Heterogeneous Dynamics of Supercooled Liquids

Observation of one-dimensional Dirac fermions in silicon nanoribbons

Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$

Systematic investigation of emergent particles in type-III magnetic space groups

The first- and second-order magneto-optical effects and intrinsically anomalous transport in 2D van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I)

Three-dimensional energy gap and origin of charge-density wave in kagome superconductor KV3Sb5

Topological Invariant and Anomalous Edge Modes of Strongly Nonlinear Systems

Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5

$C_n$-symmetric higher-order topological crystalline insulators in atomically thin transition-metal dichalcogenides

Electron-phonon coupling in the charge density wave state of CsV$_3$Sb$_5$

Encyclopedia of emergent particles in type-IV magnetic space groups

From Atomic Semimetal to Topological Nontrivial Insulator

MagneticTB: A package for tight-binding model of magnetic and non-magnetic materials

No observation of chiral flux current in the topological kagome metal CsV$_{3}$Sb$_{5}$

Two-dimensional Dirac semiconductor and its material realization

Engineering symmetry breaking in two-dimensional layered materials

Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones

Ferromagnetic hybrid nodal loop and switchable type-I and type-II Weyl fermions in two-dimension

Giant Anomalous Nernst Effect in Noncollinear Antiferromagnetic Mn-based Antiperovskite Nitrides

Observation of the Topologically Originated Edge States in large-gap Quasi-One-Dimensional a-Bi$_4$Br$_4$

Review: Progress on 2D topological insulators and potential ap-plications in electronic devices

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

Topological magneto-optical effects and their quantization in noncoplanar antiferromagnets

Topological Nodal Line Electrides: Realization of Ideal Nodal Line State Nearly Immune from Spin-Orbit Coupling

Tunable magneto-optical effect, anomalous Hall effect and anomalous Nernst effect in two-dimensional room-temperature ferromagnet $1T$-CrTe$_2$

Two-dimensional antiferromagnetic Dirac fermions in monolayer TaCoTe$_2$

Type-II topological metals

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

Valley-dependent properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$

Nodal Line Spin-gapless Semimetals and High-quality Candidate Materials

Transport tuning of photonic topological edge states by optical cavities

Borophene as an extremely high capacity electrode material for Li-ion and Na-ion batteries

Possible Superconductivity Approaching Ice Point

Predicted Unusual Magnetoresponse in Type-II Weyl Semimetals

Electric field controlled spin- and valley-polarized edge states in silicene with extrinsic Rashba effect

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Itinerant Ferromagnetism and $p+ip'$ Superconductivity in Doped Bilayer Silicene

Large magneto-optical Kerr effect in noncollinear antiferromagnets Mn$_{3}X$ ($X$ = Rh, Ir, or Pt)

Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide Bi$_{4}$Br$_{4}$

Possible Electric-Field-Induced Superconducting States in Doped Silicene

Strain effects on electronic and optic properties of monolayer C$_2$N holey two-dimensional crystals

Time-reversal-invariant topological superconductivity in n-doped BiH

Topological magnetic phase in LaMnO$_3$ (111) bilayer

Topological p+ip superconductivity in doped graphene-like single-sheet materials BC$_3$

Valley-polarized quantum anomalous Hall phases and tunable topological phase transitions in half-hydrogenated Bi honeycomb monolayers

Weak Topological Insulators and Composite Weyl Semimetals: $β$-Bi$_{4}$X$_{4}$ (X=Br, I)

Effect of modulations of doping and strain on the electron transport in monolayer MoS_2

Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling

Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides

Low-Energy Effective Hamiltonian for Giant-Gap Quantum Spin Hall Insulators in Honeycomb X-Hydride/Halide (X=N-Bi) Monolayers

Probing the Topological Phase Transition via Density Oscillations in Silicene and Germanene

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap

Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

Topological edge states in single- and multi-layer Bi$_{4}$Br$_{4}$

Topological metallic states in spin-orbit coupled bilayer systems

Valley-polarized quantum anomalous Hall phase and disorder induced valley-filtered chiral edge channels

d+id' Chiral Superconductivity in Bilayer Silicene

Electronic Structures of Graphene Layers on Metal Foil: Effect of Point Defects

Engineering Topological Surface States and Giant Rashba Spin Splitting in BiTeI/Bi$_2$Te$_3$ Heterostructures

Observation of Dirac cone warping and chirality effects in silicene

Phonon-mediated Superconductivity in Silicene

Stability, Electronic and Magnetic properties of magnetically doped topological insulators Bi2Se3, Bi2Te3 and Sb2Te3

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

Valley-Polarized Quantum Anomalous-Hall Effects in Silicene