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Researcher profile

Jiamin Xue

Jiamin Xue contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

4 published item(s)

preprint2022arXiv

Anisotropic Infrared Response and Orientation-dependent Strain-tuning of the Electronic Structure in Nb2SiTe4

Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phosphorus is a prominent example. However, it suffers from poor ambient stability. Here, we report the strain-tunable anisotropic infrared response of a layered material Nb2SiTe4, whose lattice structure is similar to the 2H-phase transition metal dichalcogenides (TMDCs) with three different kinds of building units. Strikingly, some of the strain-tunable optical transitions are crystallographic axis-dependent, even showing opposite shift when uniaxial strain is applied along two in-plane principal axes. Moreover, G0W0-BSE calculations show good agreement with the anisotropic extinction spectra. The optical selection rules are obtained via group theory analysis, and the strain induced unusual shift trends are well explained by the orbital coupling analysis. Our comprehensive study suggests that Nb2SiTe4 is a good candidate for tunable polarization-sensitive optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Observation of Dimension-Crossover of a Tunable 1D Dirac Fermion in Topological Semimetal NbSi$_x$Te$_2$

Condensed matter systems in low dimensions exhibit emergent physics that does not exist in three dimensions. When electrons are confined to one dimension (1D), some significant electronic states appear, such as charge density wave, spin-charge separations and Su-Schrieffer-Heeger (SSH) topological state. However, a clear understanding of how the 1D electronic properties connects with topology is currently lacking. Here we systematically investigated the characteristic 1D Dirac fermion electronic structure originated from the metallic NbTe$_2$ chains on the surface of the composition-tunable layered compound NbSi$_x$Te$_2$ ($x$ = 0.40 and 0.43) using angle-resolved photoemission spectroscopy. We found the Dirac fermion forms a Dirac nodal line structure protected by the combined $\widetilde{\mathcal{M}}{\rm_y}$ and time-reversal symmetry T and proves the NbSi$_x$Te$_2$ system as a topological semimetal, in consistent with the ab-initio calculations. As $x$ decreases, the interaction between adjacent NbTe2 chains increases and Dirac fermion goes through a dimension-crossover from 1D to 2D, as evidenced by the variation of its Fermi surface and Fermi velocity across the Brillouin zone in consistence with a Dirac SSH model. Our findings demonstrate a tunable 1D Dirac electron system, which offers a versatile platform for the exploration of intriguing 1D physics and device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Detecting Band Profiles of Devices with Conductive Atomic Force Microscopy

Band profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a device at the nanometer scale is highly demanded. Conventional scanning tunneling spectroscopy (STS) can map band structure at the atomic scale, but is limited to the interior of large and conductive samples. Here we develop a contact-mode STS based on conductive atomic force microscope that can remove these constraints. With this technique, we map the band profile of MoS$_2$ transistors with nanometer resolution at room temperature. A band bending of 0.6 eV within 18 nm of the edges of MoS$_2$ on insulating substrate is discovered. This technique will be of great use for both fundamental and applied studies of various electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30° twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have the quasicrystal like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG is investigated using scanning tunneling microscopy (STM) and spectroscopy (STS). The energy-dependent local density of states (DOS) with in-situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG, and provides insights of the electronic properties and interlayer coupling in this intriguing system.

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