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Brian J. LeRoy

Brian J. LeRoy appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.supr-conphysics.app-phphysics.opticsquant-ph

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Published work

19 published item(s)

preprint2025arXiv

Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor

Excitons, Coulomb bound electron-hole pairs, dominate the optical response of two-dimensional semiconductors across near-infrared and visible frequencies due to their large binding energy and prominent oscillator strength. Previous measurements of excitons in 2D semiconductors have primarily relied on far-field optical spectroscopy techniques which are diffraction limited to several hundred nanometers. To precisely image nanoscale spatial disorder requires an order of magnitude increase in resolution capabilities. Here, we present a study of the exciton spectra of monolayer MoSe2 in the visible range using a cryogenic scattering-type scanning near field optical microscope (s-SNOM) operating down to 11 K. By mapping the spatial variation in the exciton resonance across an hBN encapsulated MoSe2 monolayer, we achieve sub-50 nm spatial resolution and energy resolution below 1 meV. We further investigate the material's near-field spectra and dielectric function, demonstrating the ability of cryogenic visible s-SNOM to reveal nanoscale disorder. Comparison to room temperature measurements illustrate the enhanced capabilities of cryogenic s-SNOM to reveal fine-scale material heterogeneity.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Direct STM Measurements of R- and H-type Twisted MoSe2/WSe2 Heterostructures

When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moiré potential. As the angle between the layers changes, so do the electronic properties. As the angle approaches 0- or 60-degrees interesting characteristics and properties such as modulations in the band edges, flat bands, and confinement are predicted to occur. Here we report scanning tunneling microscopy and spectroscopy measurements on the band gaps and band modulations in MoSe2/WSe2 heterostructures with near 0 degree rotation (R-type) and near 60 degree rotation (H-type). We find a modulation of the band gap for both stacking configurations with a larger modulation for R-type than for H-type as predicted by theory. Furthermore, local density of states images show that electrons are localized differently at the valence band and conduction band edges.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl

Heusler alloys based magnetic tunnel junctions can potentially provide high magnetoresistance, small damping and fast switching. Here junctions with Co2FeAl as a ferromagnetic electrode are fabricated by room temperature sputtering on Si/SiO2 substrates. The doping of Boron in Co2FeAl is found to have a large positive impact on the structural, magnetic and transport properties of the junctions, with a reduced interfacial roughness and substantial improved tunneling magnetoresistance. A two-level magnetoresistance is also observed in samples annealed at low temperature, which is believed to be related to the memristive effect of the tunnel barrier with impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Interlayer Exciton Diode and Transistor

Controlling the flow of charge neutral interlayer exciton (IX) quasiparticles can potentially lead to low loss excitonic circuits. Here, we report unidirectional transport of IXs along nanoscale electrostatically defined channels in an MoSe$_2$-WSe$_2$ heterostructure. These results are enabled by a lithographically defined triangular etch in a graphene gate to create a potential energy ''slide''. By performing spatially and temporally resolved photoluminescence measurements, we measure smoothly varying IX energy along the structure and high-speed exciton flow with a drift velocity up to 2 * 10$^6$ cm/s, an order of magnitude larger than previous experiments. Furthermore, exciton flow can be controlled by saturating exciton population in the channel using a second laser pulse, demonstrating an optically gated excitonic transistor. Our work paves the way towards low loss excitonic circuits, the study of bosonic transport in one-dimensional channels, and custom potential energy landscapes for excitons in van der Waals heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Flat bands in twisted bilayer transition metal dichalcogenides

The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of flat bands with localized states and enhanced electronic correlations. In transition metal dichalcogenides, flat bands have been theoretically predicted to occur for long moiré wavelengths over a range of twist angles around 0 and 60 degrees giving much wider versatility than magic angle twisted bilayer graphene. Here we show the existence of a flat band in the electronic structure of 3° and 57.5° twisted bilayer WSe2 samples using scanning tunneling spectroscopy. Direct spatial mapping of wavefunctions at the flat band energy have shown that the flat bands are localized differently for 3° and 57.5°, in excellent agreement with first-principle density functional theory calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Local characterization and engineering of proximitized correlated states in graphene-NbSe$_2$ vertical heterostructures

Using a van der Waals vertical heterostructure consisting of monolayer graphene, monolayer hBN and NbSe$_2$, we have performed local characterization of induced correlated states in different configurations. At a temperature of 4.6 K, we have shown that both superconductivity and charge density waves can be induced in graphene from NbSe2 by proximity effects. By applying a vertical magnetic field, we imaged the Abrikosov vortex lattice and extracted the coherence length for the proximitized superconducting graphene. We further show that the induced correlated states can be completely blocked by adding a monolayer hBN between the graphene and the NbSe$_2$, which demonstrates the importance of the tunnel barrier and surface conditions between the normal metal and superconductor for the proximity effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing the wavefunctions of correlated states in magic angle graphene

Using scanning probe microscopy and spectroscopy, we explore the spatial symmetry of the electronic wavefunctions of twisted bilayer graphene at the "magic angle" of 1.1 degrees. This small twist angle leads to a long wavelength moiré unit cell on the order of 13 nm and the appearance of two flat bands. As the twist angle is decreased, correlation effects increase until they are maximized at the magic angle. At this angle, the wavefunctions at the charge neutrality point show only C2 symmetry due to the emergence of a charge ordered state. As the system is doped, the symmetry of the wavefunctions change at each commensurate filling of the moiré unit cell pointing to the correlated nature of the spin and valley degeneracy broken states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Local Spectroscopic Characterization of Spin and Layer Polarization in WSe$_2$

We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the photoluminescence peak indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier transform STS (FT-STS), we map the energy versus momentum dispersion relations for monolayer and bilayer WSe$_2$. Further, by tracking allowed and forbidden scattering channels as a function of energy we infer the spin texture of both the conduction and valence bands. We observe a large spin-splitting of the valence band due to strong spin-orbit coupling, and additionally observe spin-valley-layer coupling in the conduction band of bilayer WSe$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scanning gate microscopy of ultra clean carbon nanotube quantum dots

We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can be tuned from the weak to strong coupling regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Band Structure Mapping of Bilayer Graphene via Quasiparticle Scattering

A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as $γ_0 = 3.1$ eV, $γ_1 = 0.39$ eV, and $γ_4 = 0.22$ eV.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electric Field Control of Soliton Motion and Stacking in Trilayer Graphene

The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favored as the electric field increases. This ability to control the stacking order in graphene opens the way to novel devices which combine structural and electrical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene on Hexagonal Boron Nitride

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices, as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Local Spectroscopy of the Electrically Tunable Band Gap in Trilayer Graphene

The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuation of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optical characterization of electron-phonon interactions at the saddle point in graphene

The role of electron-phonon interactions is experimentally and theoretically investigated near the saddle point absorption peak of graphene. The differential optical transmission spectra of multiple, non-interacting layers of graphene reveals the dominant role played by electron-acoustic phonon coupling in bandstructure renormalization. Using a Born approximation for electron-phonon coupling and experimental estimates of the dynamic phonon lattice temperature, we deduce the effective acoustic deformation potential to be $D^{\rm ac}_{\rm eff} \simeq 5$eV. This value is in accord with recent theoretical predictions but differs substantially from those obtained using electrical transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optical thickness determination of hexagonal Boron Nitride flakes

Optical reflectivity contrast provides a simple, fast and noninvasive method for characterization of few monolayer samples of two-dimensional materials. Here we apply this technique to measure the thickness of thin flakes of hexagonal Boron Nitride (hBN), which is a material of increasing interest in nanodevice fabrication. The optical contrast shows a strong negative peak at short wavelengths and zero contrast at a thickness dependent wavelength. The optical contrast varies linearly for 1-80 layers of hBN, which permits easy calibration of thickness. We demonstrate the applicability of this quick characterization method by comparing atomic force microscopy and optical contrast results.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride

The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of band gaps near points of the reciprocal lattice known as Brillouin zone boundaries. However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a band gap and instead new Dirac points appear in the electronic structure of the material. Graphene on hexagonal boron nitride (hBN) exhibits a rotation dependent Moiré pattern. In this letter, we show experimentally and theoretically that this Moiré pattern acts as a weak periodic potential and thereby leads to the emergence of a new set of Dirac points at an energy determined by its wavelength. The new massless Dirac fermions generated at these superlattice Dirac points are characterized by a significantly reduced Fermi velocity. The local density of states near these Dirac cones exhibits hexagonal modulations indicating an anisotropic Fermi velocity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Long wavelength local density of states oscillations near graphene step edges

Using scanning tunneling microscopy and spectroscopy, we have studied the local density of states (LDOS) of graphene over step edges in boron nitride. Long wavelength oscillations in the LDOS are observed with maxima parallel to the step edge. Their wavelength and amplitude are controlled by the energy of the quasiparticles allowing a direct probe of the graphene dispersion relation. We also observe a faster decay of the LDOS oscillations away from the step edge than in conventional metals. This is due to the chiral nature of the Dirac fermions in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Response of graphene to femtosecond high-intensity laser irradiation

We study the response of graphene to high-intensity 10^11-10^12 Wcm^-2, 50-femtosecond laser pulse excitation. We establish that graphene has a fairly high (~3\times10^12Wcm^-2) single-shot damage threshold. Above this threshold, a single laser pulse cleanly ablates graphene, leaving microscopically defined edges. Below this threshold, we observe laser-induced defect formation that leads to degradation of the lattice over multiple exposures. We identify the lattice modification processes through in-situ Raman microscopy. The effective lifetime of CVD graphene under femtosecond near-IR irradiation and its dependence on laser intensity is determined. These results also define the limits of non-linear applications of graphene in femtosecond high-intensity regime.

0 citations0 reviewsNo code linkedOpen access