BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Emanuel Tutuc

Emanuel Tutuc appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

Catalog footprint

What is connected

20works
4topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

20 published item(s)

preprint2022arXiv

Emergence of Correlations in Alternating Twist Quadrilayer Graphene

Recently, alternating twist multilayer graphene (ATMG) has emerged as a family of moiré systems that share several fundamental properties with twisted bilayer graphene, and are expected to host similarly strong electron-electron interactions near the magic angle. Here, we study alternating twist quadrilayer graphene (ATQG) samples with twist angles of 1.96° and 1.52°, which are slightly removed from the magic angle of 1.68°. At the larger angle, we find signatures of correlated insulators only when the ATQG is hole doped, and no signatures of superconductivity, and for the smaller angle we find evidence of superconductivity, while signs of the correlated insulators weaken. Our results provide insight into the twist angle dependence of correlated phases in ATMG and shed light on the nature of correlations in the intermediate coupling regime at the edge of the magic angle range where dispersion and interaction are of the same order.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Flat bands in twisted bilayer transition metal dichalcogenides

The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of flat bands with localized states and enhanced electronic correlations. In transition metal dichalcogenides, flat bands have been theoretically predicted to occur for long moiré wavelengths over a range of twist angles around 0 and 60 degrees giving much wider versatility than magic angle twisted bilayer graphene. Here we show the existence of a flat band in the electronic structure of 3° and 57.5° twisted bilayer WSe2 samples using scanning tunneling spectroscopy. Direct spatial mapping of wavefunctions at the flat band energy have shown that the flat bands are localized differently for 3° and 57.5°, in excellent agreement with first-principle density functional theory calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunneling and Fluctuating Electron-Hole Cooper Pairs in Double Bilayer Graphene

A strong low-temperature enhancement of the tunneling conductance between graphene bilayers has been reported recently, and interpreted as a signature of equilibrium electron-hole pairing, first predicted in bilayers more than forty years ago but previously unobserved. Here we provide a detailed theory of conductance enhanced by fluctuating electron-hole Cooper pairs, which are a precursor to equilibrium pairing, that accounts for specific details of the multi-band double graphene bilayer system which supports several different pairing channels. Above the equilibrium condensation temperature, pairs have finite temporal coherence and do not support dissipationless tunneling. Instead, they strongly boost the tunneling conductivity via a fluctuational internal Josephson effect. Our theory makes predictions for the dependence of the zero bias peak in the differential tunneling conductance on temperature and electron-hole density imbalance that capture important aspects of the experimental observations. In our interpretation of the observations, cleaner samples with longer disorder scattering times would condense at temperatures $T_c$ up to $\sim 50 {\rm K}$, compared to the record $T_c \sim 1.5 $K achieved to date in the experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Interlayer Exciton Laser with Extended Spatial Coherence in an Atomically-Thin Heterostructure

Two-dimensional semiconductors have emerged as a new class of materials for nanophotonics for their strong exciton-photon interaction and flexibility for engineering and integration. Taking advantage of these properties, we engineer an efficient lasing medium based on dipolar interlayer excitons, in rotationally aligned atomically thin heterostructures. Lasing is measured from a transition metal dichalcogenide hetero-bilayer integrated in a silicon nitride grating resonator. A sharp increase in the spatial coherence of the emission was observed across the lasing threshold. The work establishes interlayer excitons in two-dimensional heterostructures as a silicon-compatible coherent medium. With electrically tunable light-matter interaction strength and long-range dipolar interactions, these interlayer excitons promise both applications to low-power, ultrafast laser and modulators and rich many-body quantum phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-κ$ dopant', we achieved a contact resistance of ~ $180$ $Ω.μm$ which is the lowest reported value for ML $MoS_{2}$. An ON current as high as $240$ $μA/μm$ and field effect mobility as high as $83$ $cm^2/V-s$ were realized using this doping technique. Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$ $cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are among the highest mobility values reported on ML $MoS_{2}$. We also analyzed the doping effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent when stoichiometric $TiO_{2}$ is used, using ab initio density functional theory (DFT) calculations which shows excellent agreement with our experimental findings. Based on the interfacial-oxygen-vacancy mediated doping as seen in the case of $high-κ$ ATO - ML $MoS_{2}$, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a $high-κ$ dielectric environment.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, we simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. We find that rotational misalignment between the channel layers and the tunnel barrier in this van der Waal's heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal's heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Giant Frictional Drag in Double Bilayer Graphene Heterostructures

We study the frictional drag between carriers in two bilayer graphene flakes separated by a 2 $-$ 5 nm thick hexagonal boron nitride dielectric. At temperatures ($T$) lower than $\sim$ 10 K, we observe a large anomalous negative drag emerging predominantly near the drag layer charge neutrality. The anomalous drag resistivity increases dramatically with reducing {\it T}, and becomes comparable to the layer resistivity at the lowest {\it T} = 1.5 K. At low $T$ the drag resistivity exhibits a breakdown of layer reciprocity. A comparison of the drag resistivity and the drag layer Peltier coefficient suggests a thermoelectric origin of this anomalous drag.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe$_2$: Landau level degeneracy, effective mass, and negative compressibility

We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2$, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe$_2$ reveal the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of $0.45m_{0}$ for both mono and bilayer WSe$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces

Plasmonic metasurfaces are able to modify the wavefront by altering the light intensity, phase and polarization state. Active plasmonic metasurfaces would allow dynamic modulation of the wavefront which give rise to interesting application such as beam-steering, holograms and tunable waveplates. Graphene is an interesting material with dynamic property which can be controlled by electrical gating at an ultra-fast speed. We use a graphene-integrated metasurface to induce a tunable phase change to the wavefront. The metasurface supports a Fano resonance which produces high-quality resonances around 7.7 microns. The phase change is measured using a Michleson interferometry setup. It is shown that the reflection phase can change up to 55 degrees. In particular the phase can change by 28 degrees while the amplitude is nearly constant. The anisotropic optical response of the metasurface is used to modulate the ellipticity of the reflected wave in response to an incident field at 45 degree. We show a proof of concept application of our system in potentially ultra-fast laser interferometry with sub-micron accuracy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomistic simulation of the electronic states of adatoms in monolayer MoS2

Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide (TMD) Molybdenum-disulfide (MoS2). We consider the 1st (Li, Na, K) and 7th (F, Cl, Br) column atoms and metals (Sc, Ti, Ta, Mo, Pd, Pt, Ag, Au). Three high symmetry sites for the adatom on the surface of monolayer MoS2 are examined as starting points to search for the most energetically stable configuration for each adatom-monolayer MoS2 system, as well as the type of associated bonding. For the most stable adatom positions, we characterize the emergence of adatom-induced electronic states including any dopant states.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene

Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a non-linear carrier density dependence, and bears signatures of electron-electron interactions. The data allow a direct measurement of the electric field-induced bandgap at zero magnetic field, the orbital Landau level (LLs) energies, and the broken symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all half-filled LLs, as well as emerging phases at filling factors ν= 0 and ν= +-2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Silicon-based Infrared Metamaterials with Ultra-Sharp Fano Resonances

Metamaterials and meta-surfaces represent a remarkably versatile platform for light manipulation, biological and chemical sensing, nonlinear optics, and even spaser lasing. Many of these applications rely on the resonant nature of metamaterials, which is the basis for extreme spectrally selective concentration of optical energy in the near field. The simplicity of free-space light coupling into sharply-resonant meta-surfaces with high resonance quality factors Q>>1 is a significant practical advantage over the extremely angle-sensitive diffractive structures or inherently inhomogeneous high-Q photonic structures such as toroid or photonic crystal microcavities. Such spectral selectivity is presently impossible for the overwhelming majority of metamaterials that are made of metals and suffer from high plasmonic losses. Here, we propose and demonstrate Fano-resonant all-semiconductor optical meta-surfaces supporting optical resonances with quality factors Q>100 that are almost an order of magnitude sharper than those supported by their plasmonic counterparts. These silicon-based structures are shown to be planar chiral, opening exciting possibilities for efficient ultra-thin circular polarizers and narrow-band thermal emitters of circularly polarized radiation.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting in a 2X reduction of access resistance and a 2.5X improvement in device electrical characteristics, over undoped devices. The GFETs on Si/SiO$_2$ substrates have high carrier mobilities of up to 6,300 cm$^2$/Vs. Self-aligned spin-on-doping is applicable to GFETs on arbitrary substrates, as demonstrated by a 3X enhancement in performance for GFETs on insulating quartz substrates, which are better suited for radio frequency applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $ν=0$ in High Magnetic Fields

We investigate the transverse electric field ($E$) dependence of the $ν$=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ($ρ_{xx}$) measured at $ν$=0 shows an insulating behavior which is strongest in the vicinity of $E$=0, and at large $E$-fields. At a fixed perpendicular magnetic field ($B$), the $ν$=0 QHS undergoes a transition as a function of $E$, marked by a minimum, temperature-independent $ρ_{xx}$. This observation is explained by a transition from a spin polarized $ν$=0 QHS at small $E$-fields, to a valley (layer) polarized $ν$=0 QHS at large $E$-fields. The $E$-field value at which the transition occurs has a linear dependence on $B$

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Lateral Spin Injection in Germanium Nanowires

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 samples, we map out the contact resistance window for which lateral spin transport is observed, manifestly showing the conductivity matching required for spin injection. Our analysis, based on the spin diffusion theory, indicates that the spin diffusion length is larger than 100 μm in germanium nanowires at 4.2 K.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single layer graphene with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on Si/SiO2 substrates showed electron mobilities as high as 4050 cm2V-1s-1 at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.

0 citations0 reviewsNo code linkedOpen access