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Researcher profile

Jerzy Krupka

Jerzy Krupka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.ins-detcond-mat.mes-hallcond-mat.supr-conphysics.opticsquant-ph

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Published work

9 published item(s)

preprint2015arXiv

Determination of the Anisotropy of Permittivity of Quantum Paraelectric Strontium Titanate

The dielectric properties of strontium titanate (SrTiO$_3$) have previously been reported from room temperature to low temperatures with conflicting results. In this work, precision measurement of the permittivity is undertaken by simultaneously measuring transverse electric and transverse magnetic resonant modes within a single crystal. It is unequivocally shown that the permittivity is isotropic at room temperature with a permittivity of order $316.3\pm2.2$ by measuring multiple modes of different electric field polarisations. As the crystal is cooled to 5 K and undergoes well known phase transitions, we show the material becomes uniaxial anisotropic with the ratio of the parallel to perpendicular permittivity to the cylinder z-axis of the sample as high as 2.4 below 6 K.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electromagnetic properties of polycrystalline diamond from 35K to room temperature and microwave to terahertz frequencies

Dielectric resonators are key components for many microwave and millimetre wave applications, including high-Q filters and frequency-determining elements for precision frequency synthesis. These often depend on the quality of the dielectric material. The commonly used material for building the best cryogenic microwave oscillators is sapphire. However sapphire is becoming a limiting factor for higher frequencies design. It is then important to find new candidates that can fulfil the requirements for millimetre wave low noise oscillators at room and cryogenic temperatures. These clocks are used as a reference in many fields, like modern telecommunication systems, radio astronomy (VLBI), and precision measurements at the quantum limit. High-resolution measurements were made of the temperature-dependence of the electromagnetic properties of a polycrystalline diamond disk at temperatures between 35 K and 330 K at microwave to sub-millimetre wave frequencies. The cryogenic measurements were made using a TE01δ dielectric mode resonator placed inside a vacuum chamber connected to a single-stage pulse-tube cryocooler. The high frequency characterization was performed at room temperature using a combination of a quasi-optical two-lens transmission setup, a Fabry-Perot cavity and a whispering gallery mode resonator excited with waveguides. Our CVD diamond sample exhibits a decreasing loss tangent with increasing frequencies. We compare the results with well known crystals. This comparison makes clear that polycrystalline diamond could be an important material to generate stable frequencies at millimetre waves.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Complex Permittivity Measurements at Variable Temperatures of Low Loss Dielectric Substrates Employing Split Post and Single Post Dielectric Resonators

A split post dielectric resonator in a copper enclosure and a single post dielectric resonator in a cavity with superconducting end-plates have been constructed and used for the complex permittivity measurements of single crystal substrates. (La,Sr)(Al,Ta)O3, LaAlO3, MgO and quartz substrates have been measured at temperatures from 20 K to 300 K in the split post resonator and from 15 K to 80 K in the single post resonator. The TE01delta mode resonant frequencies and unloaded Qo-factors of the empty resonators at temperature of 20 K were: 9.952 GHz and 25,000 for the split post resonator and 10.808 GHz and 240,000 for the single post resonator respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Loss tangent measurements of dielectric substrates from 15 K to 300 K with two resonators: investigation into accuracy issues

The loss tangent of medium, low and very low loss dielectric substrates (including the Rogers RT Duroid 5880 and 6010.2, LaAlO3, (La, Sr)(Al, Ta)O3, MgO and Quartz) was measured at varying temperatures with two TE01δ dielectric resonators to ensure verification of the tests. The accuracy of the measurements has been researched and discussed for split post dielectric resonator (SPDR) in a copper enclosure and a single post dielectric resonator (SuPDR) in a superconducting enclosure in the temperature range from 15K to 300 K.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Microwave characterisation of CaF2 at cryogenic temperatures using a dielectric resonator technique

Properties of calcium fluoride (CaF2) have been well researched at UV, visible and IR range of frequencies, but not at ultra high frequencies. In this work we report the loss tangent and the real part of relative permittivity of CaF2, measured in the temperatures range of 15 - 81 K and the frequency of 29.25 GHz. The loss tangent and the real part of relative permittivity were determined by measurements of the resonant frequency and the Qo - factor of a TE011 mode cylindrical copper cavity with superconducting plates containing the sample under test. The measured real part of relative permittivity of CaF2 was found to change from 6.484 to 6.505, and the loss tangent from 3.1x10^(-6) to 22.7x10^(-6), when the temperature was varied from 15 to 81 K. Due to the low losses CaF2 can be useful in construction of high Q-factor microwave circuits and devices, operating at the cryogenic temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Microwave properties of Yttrium Vanadate at cryogenic temperatures

Yttrium Vanadate (YVO4) is a birefringent crystal material used in optical isolators and circulators with potentials for application in cryogenic microwave devices. As microwave properties of the YVO4 are not known, we measured the complex permittivity at the frequency of 25 GHz, using the Hakki-Coleman dielectric resonator technique in the temperature range from 13 K to 80 K. The real part of relative permittivity of YVO4 turned out to be similar to that of Sapphire - one of popular dielectric materials, used at microwave frequencies. The measured loss tangent tang δ of the YVO4 was of the order of 10^(-6) at cryogenic temperatures. As Yttrium Vanadate (YVO4) is easy to synthesis and machine, it may replace the expensive Sapphire in some microwave applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Precise microwave characterization of MgO substrates for HTS circuits with superconducting post dielectric resonator

Accurate data of complex permittivity of dielectric substrates are needed for efficient design of HTS microwave planar circuits. We have tested MgO substrates from three different manufacturing batches using a dielectric resonator with superconducting parts recently developed for precise microwave characterization of laminar dielectrics at cryogenic temperatures. The measurement fixture has been fabricated using a SrLaAlO3 post dielectric resonator with DyBa2Cu3O7 end plates and silver-plated copper sidewalls to achieve the resolution of loss tangent measurements of 2 {\times} 10-6. The tested MgO substrates exhibited the average relative permittivity of 9.63 and tan δ from 3.7 {\times} 10-7 to 2 {\times} 10-5 at frequency of 10.5 GHz in the temperature range from 14 to 80 K.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Surface resistance measurements of HTS thin films using SLAO dielectric resonator

Surface resistance of HTS films is typically measured using Sapphire dielectric rod resonators enclosed in a copper cavity. In this paper we present surface resistance measurements of YBa2Cu3O7-δ films using Strontium Lanthanum Aluminate (SLAO) at a resonant frequency of 18.2 GHz. We have performed the error analysis of the cavity loaded with SLAO dielectric rod and also verification measurements using two Sapphire (Al2O3) rod resonators operating at resonant frequencies of 24.6 GHz and 10 GHz respectively. Good agreement between the values of Rs of two sets of YBa2Cu3O7-δ films measured using the SLAO and the Sapphire dielectrics has been obtained after a frequency scaling of Rs was applied. Using different dielectric rods of the same size in the same cavity for measurements of Rs of HTS films, it is feasible to do microwave characterization of the same films at differing frequencies.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures

We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.

0 citations0 reviewsNo code linkedOpen access