Researcher profile

Mohan V. Jacob

Mohan V. Jacob contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2012arXiv

Comparing unloaded Q-factor of a high-Q dielectric resonator measured using the transmission mode and reflection mode methods involving S-parameter circle fitting

A comparative study of unloaded Q-factor measurements of a TE011 mode sapphire dielectric resonator with unloaded Q-factor value of 731,000 at a frequency of 10 GHz and temperature of 65 K using two best Q-factor measurement methods are presented. The Transmission (TMQF) and Reflection methods are based on relevant multi-frequency S-parameter measurements and circle fitting procedures to compute the unloaded Q-factor of the resonator. For accurate comparison of the methods a delay compensation procedure (introduced in the TMQF technique to remove delay due to non-calibrated cables) has been applied also to the reflection data.

preprint2012arXiv

Complex Permittivity Measurements at Variable Temperatures of Low Loss Dielectric Substrates Employing Split Post and Single Post Dielectric Resonators

A split post dielectric resonator in a copper enclosure and a single post dielectric resonator in a cavity with superconducting end-plates have been constructed and used for the complex permittivity measurements of single crystal substrates. (La,Sr)(Al,Ta)O3, LaAlO3, MgO and quartz substrates have been measured at temperatures from 20 K to 300 K in the split post resonator and from 15 K to 80 K in the single post resonator. The TE01delta mode resonant frequencies and unloaded Qo-factors of the empty resonators at temperature of 20 K were: 9.952 GHz and 25,000 for the split post resonator and 10.808 GHz and 240,000 for the single post resonator respectively.

preprint2012arXiv

Loss tangent measurements of dielectric substrates from 15 K to 300 K with two resonators: investigation into accuracy issues

The loss tangent of medium, low and very low loss dielectric substrates (including the Rogers RT Duroid 5880 and 6010.2, LaAlO3, (La, Sr)(Al, Ta)O3, MgO and Quartz) was measured at varying temperatures with two TE01δ dielectric resonators to ensure verification of the tests. The accuracy of the measurements has been researched and discussed for split post dielectric resonator (SPDR) in a copper enclosure and a single post dielectric resonator (SuPDR) in a superconducting enclosure in the temperature range from 15K to 300 K.

preprint2012arXiv

Lumped element modeling of nonlinear properties of high temperature superconductors in a dielectric resonator

Microwave properties of High Temperature Superconductors (HTS) exhibit dependence on RF power levels. Effects of nonlinear phenomena causing this dependence can be modelled using lumped element circuits. Several RLC circuits to model the surface impedance of HTS were investigated (with equations expressing transmitted power derived) and assessed. Linear, quadratic and exponential dependences of surface resistance RS and inductance LS on the RF power for the model chosen as the best have been examined and used in simulations of electromagnetic responses of superconducting films in a Hakki-Coleman dielectric resonator.

preprint2012arXiv

Microwave characterisation of CaF2 at cryogenic temperatures using a dielectric resonator technique

Properties of calcium fluoride (CaF2) have been well researched at UV, visible and IR range of frequencies, but not at ultra high frequencies. In this work we report the loss tangent and the real part of relative permittivity of CaF2, measured in the temperatures range of 15 - 81 K and the frequency of 29.25 GHz. The loss tangent and the real part of relative permittivity were determined by measurements of the resonant frequency and the Qo - factor of a TE011 mode cylindrical copper cavity with superconducting plates containing the sample under test. The measured real part of relative permittivity of CaF2 was found to change from 6.484 to 6.505, and the loss tangent from 3.1x10^(-6) to 22.7x10^(-6), when the temperature was varied from 15 to 81 K. Due to the low losses CaF2 can be useful in construction of high Q-factor microwave circuits and devices, operating at the cryogenic temperatures.

preprint2012arXiv

Microwave properties of Yttrium Vanadate at cryogenic temperatures

Yttrium Vanadate (YVO4) is a birefringent crystal material used in optical isolators and circulators with potentials for application in cryogenic microwave devices. As microwave properties of the YVO4 are not known, we measured the complex permittivity at the frequency of 25 GHz, using the Hakki-Coleman dielectric resonator technique in the temperature range from 13 K to 80 K. The real part of relative permittivity of YVO4 turned out to be similar to that of Sapphire - one of popular dielectric materials, used at microwave frequencies. The measured loss tangent tang δ of the YVO4 was of the order of 10^(-6) at cryogenic temperatures. As Yttrium Vanadate (YVO4) is easy to synthesis and machine, it may replace the expensive Sapphire in some microwave applications.

preprint2012arXiv

Precise microwave characterization of MgO substrates for HTS circuits with superconducting post dielectric resonator

Accurate data of complex permittivity of dielectric substrates are needed for efficient design of HTS microwave planar circuits. We have tested MgO substrates from three different manufacturing batches using a dielectric resonator with superconducting parts recently developed for precise microwave characterization of laminar dielectrics at cryogenic temperatures. The measurement fixture has been fabricated using a SrLaAlO3 post dielectric resonator with DyBa2Cu3O7 end plates and silver-plated copper sidewalls to achieve the resolution of loss tangent measurements of 2 {\times} 10-6. The tested MgO substrates exhibited the average relative permittivity of 9.63 and tan δ from 3.7 {\times} 10-7 to 2 {\times} 10-5 at frequency of 10.5 GHz in the temperature range from 14 to 80 K.

preprint2012arXiv

Surface resistance measurements of HTS thin films using SLAO dielectric resonator

Surface resistance of HTS films is typically measured using Sapphire dielectric rod resonators enclosed in a copper cavity. In this paper we present surface resistance measurements of YBa2Cu3O7-δ films using Strontium Lanthanum Aluminate (SLAO) at a resonant frequency of 18.2 GHz. We have performed the error analysis of the cavity loaded with SLAO dielectric rod and also verification measurements using two Sapphire (Al2O3) rod resonators operating at resonant frequencies of 24.6 GHz and 10 GHz respectively. Good agreement between the values of Rs of two sets of YBa2Cu3O7-δ films measured using the SLAO and the Sapphire dielectrics has been obtained after a frequency scaling of Rs was applied. Using different dielectric rods of the same size in the same cavity for measurements of Rs of HTS films, it is feasible to do microwave characterization of the same films at differing frequencies.