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Jeremy Levy

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Published work

32 published item(s)

preprint2020arXiv

Theory of Superconductivity at the LaAlO3/SrTiO3 heterointerface: Electron pairing mediated by deformation of ferroelastic domain walls

SrTiO$_3$ is a superconducting semiconductor with a pairing mechanism that is not well understood. SrTiO$_3$ undergoes a ferroelastic transition at $T=$ 105 K, leading to the formation of domains with boundaries that can couple to electronic properties. At two-dimensional SrTiO$_3$ interfaces, the orientation of these ferroelastic domains is known to couple to the electron density, leading to electron-rich regions that favor out-of-plane distortions and electron-poor regions that favor in-plane distortion. Here we show that ferroelastic domain walls support low energy excitations that are analogous to capillary waves at the interface of two fluids. We propose that these capillary waves mediate electron pairing at the LaAlO$_3$/SrTiO$_3$ interface, resulting in superconductivity around the edges of electron-rich regions. This mechanism is consistent with recent experimental results reported by Pai et al. [PRL $\bf{120}$, 147001 (2018)]

preprint2019arXiv

Gate-Tunable Optical Nonlinearities and Extinction in Graphene/LaAlO$_3$/SrTiO$_3$ Nanostructures

Pristine, undoped graphene has a constant absorption of 2.3 % across the visible to near-infrared (VIS-NIR) region of the electromagnetic spectrum. Under certain conditions, such as nanostructuring and intense gating, graphene can interact more robustly with VIS-NIR light and exhibit a large nonlinear optical response. Here, we explore the optical properties of graphene/LaAlO$_3$/SrTiO$_3$ nanostructures, where nanojunctions formed at the LaAlO$_3$/SrTiO$_3$ interface enable large (~10$^8$ V/m) electric fields to be applied to graphene over a scale of ~10 nm. Upon illumination with ultrafast VIS-NIR light, graphene/LaAlO$_3$/SrTiO$_3$ nanostructures produce broadband THz emission as well as a sum-frequency generated (SFG) response. Strong spectrally sharp, gate-tunable extinction features (>99.99%) are observed in both the VIS-NIR and SFG regions alongside significant intensification of the nonlinear response. The observed gate-tunable strong graphene-light interaction and nonlinear optical response are of fundamental interest and open the way for future exploitation in graphene-based optical devices.

preprint2019arXiv

One-dimensional Kronig-Penney superlattices at the LaAlO$_3$/SrTiO$_3$ interface

The paradigm of electrons interacting with a periodic lattice potential is central to solid-state physics. Semiconductor heterostructures and ultracold neutral atomic lattices capture many of the essential properties of 1D electronic systems. However, fully one-dimensional superlattices are highly challenging to fabricate in the solid state due to the inherently small length scales involved. Conductive atomic-force microscope (c-AFM) lithography has recently been demonstrated to create ballistic few-mode electron waveguides with highly quantized conductance and strongly attractive electron-electron interactions. Here we show that artificial Kronig-Penney-like superlattice potentials can be imposed on such waveguides, introducing a new superlattice spacing that can be made comparable to the mean separation between electrons. The imposed superlattice potential "fractures" the electronic subbands into a manifold of new subbands with magnetically-tunable fractional conductance (in units of $e^2/h$). The lowest $G=2e^2/h$ plateau, associated with ballistic transport of spin-singlet electron pairs, is stable against de-pairing up to the highest magnetic fields explored ($|B|=16$ T). A 1D model of the system suggests that an engineered spin-orbit interaction in the superlattice contributes to the enhanced pairing observed in the devices. These findings represent an important advance in the ability to design new families of quantum materials with emergent properties, and mark a milestone in the development of a solid-state 1D quantum simulation platform.

preprint2019arXiv

Pascal conductance series in ballistic one-dimensional LaAlO$_3$/SrTiO$_3$ channels

The ability to create and investigate composite fermionic phases opens new avenues for the investigation of strongly correlated quantum matter. We report the experimental observation of a series of quantized conductance steps within strongly interacting electron waveguides formed at the LaAlO$_3$/SrTiO$_3$ interface. The waveguide conductance follows a characteristic sequence within Pascal's triangle: $(1, 3, 6, 10, 15, ...)\cdot e^2/h$, where $e$ is the electron charge and $h$ is the Planck constant. The robustness of these steps with respect to magnetic field and gate voltage indicate the formation of a new family of degenerate quantum liquids formed from bound states of $n = 2, 3, 4, ...$ electrons. These experiments could provide solid-state analogues for a wide range of composite fermionic phases ranging from neutron stars to solid-state materials to quark-gluon plasmas.

preprint2016arXiv

Development and Evaluation of a Tutorial to Improve Students' Understanding of a Lock-in amplifier

A lock-in amplifier is a versatile instrument frequently used in physics research. However, many students struggle with the basic operating principles of a lock-in amplifier which can lead to a variety of difficulties. To improve students' understanding, we have been developing and evaluating a research-based tutorial which makes use of a computer simulation of a lock-in amplifier. The tutorial is based on a field-tested approach in which students realize their difficulties after predicting the outcome of simulated experiments involving a lock-in amplifier and check their predictions using the simulated lock-in amplifier. Then, the tutorial provides guidance and strives to help students develop a coherent understanding of the basics of a lock-in amplifier. The tutorial development involved interviews with physics faculty members and graduate students and iteration of many versions of the tutorial with professors and graduate students. The student difficulties with lock-in amplifiers and the development and assessment of the research-based tutorial to help students develop a functional understanding of this device are discussed.

preprint2016arXiv

Improving Students' Understanding of Lock-in Amplifiers

A lock-in amplifier is a versatile instrument frequently used in physics research. However, many students struggle with the basic operating principles of a lock-in amplifier which can lead to a variety of difficulties. To improve students' understanding, we have been developing and evaluating a research-based tutorial which makes use of a computer simulation of a lock-in amplifier. The tutorial is based on a field-tested approach in which students realize their difficulties after predicting the outcome of simulated experiments involving a lock-in amplifier and check their predictions using the simulated lock-in amplifier. Then, the tutorial guides and helps students develop a coherent understanding of the basics of a lock-in amplifier. The tutorial development involved interviews with physics faculty members and graduate students and iteration of many versions of the tutorial with professors and graduate students. The student difficulties and the development and assessment of the research-based tutorial are discussed.

preprint2016arXiv

Improving Students' Understanding of Lock-In Amplifiers

The lock-in amplifier is a versatile instrument frequently used in physics research. However, many students struggle with the basic operating principles of a lock-in amplifier which can lead to a variety of difficulties. To improve students' understanding, we have been developing and evaluating a research-based tutorial which makes use of a computer simulation of a lock-in amplifier. The tutorial allows students to realize their conceptual difficulties by comparing their predictions about how a lock-in amplifier will behave with the outcome of simulated experiments. After being confronted with discrepancies between their predictions and the lock-in amplifier results, the tutorial targets the common difficulties that students have and leads them to develop a deeper understanding of the principles of lock-in amplification.

preprint2016arXiv

Method for Transferring High-Mobility CVD-Grown Graphene with Perfluoropolymers

The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer---Hyflon---as a transfer handle and to protect graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO$_3$/SrTiO$_3$ heterostructures is atomically clean, with high mobility (~30,000 cm$^2$V$^{-1}$s$^{-1}$) near the Dirac point at 2 K and clear, quantized Hall and magneto-resistance. Local control of the LaAlO$_3$/SrTiO$_3$ interfacial metal-insulator transition---through the graphene---is preserved with this transfer method. The use of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.

preprint2016arXiv

Micrometer-scale ballistic transport of electron pairs in LaAlO3/SrTiO3 nanowires

High-mobility complex-oxide heterostructures and nanostructures offer new opportunities for extending the paradigm of quantum transport beyond the realm of traditional III-V or carbon-based materials. Recent quantum transport investigations with LaAlO$_3$/SrTiO$_3$-based quantum dots have revealed the existence of a strongly correlated phase in which electrons form spin-singlet pairs without becoming superconducting. Here we report evidence for micrometer-scale ballistic transport of electron pairs in quasi-one-dimensional (quasi-1D) LaAlO$_3$/SrTiO$_3$ nanowire cavities. In the paired phase, Fabry-Perot-like quantum interference is observed, in sync with conductance oscillations observed in the superconducting regime (at zero magnetic field). Above a critical magnetic field $B_p$, electron pairs unbind and conductance oscillations shift with magnetic field. These experimental observations extend the regime of ballistic electronic transport to strongly correlated phases.

preprint2016arXiv

Room-temperature quantum transport signatures in graphene/LaAlO3/SrTiO3 heterostructures

The pseudospin quantum degree of freedom is one of the most remarkable properties of graphene that distinguishes it from ordinary two-dimensional metals and semiconductors. Pseudospin quantum interference leads to weak antilocalization (WAL) and is influenced strongly by point defects and thermal perturbations that break chirality and destroy phase coherence. Preserving and manipulating quantum transport properties up to room temperature is key to realizing practical pseudospin-based graphene devices. Here we report fabrication and transport characterization of graphene field-effect devices on a complex-oxide heterostructure, LaAlO3/SrTiO3. Signatures of WAL, a consequence of pseudospin quantum interference, persist up to room temperature. The LaAlO3/SrTiO3 substrate plays a critical role in suppressing short-range impurity scattering and electron-phonon coupling. The observation of quantum transport signatures at room temperature is unique to this system and presents new opportunities for the development of pseudospin-based devices and novel multifunctional devices that couple to the complex-oxide interface.

preprint2016arXiv

Tunable electron-electron interactions in LaAlO3/SrTiO3 nanostructures

The interface between the two complex oxides LaAlO3 and SrTiO3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of sketched quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state) tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the dxz and dyz bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.

preprint2014arXiv

Nanoscale Phenomena in Oxide Heterostructures

Recent advances in creating complex oxide heterostructures, interfaces formed between two different transition metal oxides, have heralded a new era of materials and physics research, enabling a uniquely diverse set of coexisting physical properties to be combined with an ever- increasing degree of experimental control. Already, these systems have exhibited such varied phenomena as superconductivity, magnetism, and ferroelasticity, all of which are gate-tunable, demonstrating their promise for fundamental discovery and technological innovation alike. To fully exploit this richness, it is necessary to understand and control the physics on the smallest scales, making the use of nanoscale probes essential. Using the prototypical LaAlO$_3$/SrTiO$_3$ interface as a guide, we explore the exciting developments in the physics of oxide-based heterostructures, with a focus on nanostructures and the nanoscale probes employed to unravel their complex behavior.

preprint2013arXiv

Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

The oxide heterostructure LaAlO3/SrTiO3 supports a two-dimensional electron liquid with a variety of competing phases including magnetism, superconductivity and weak antilocalization due to Rashba spin-orbit coupling. Further confinement of this 2D electron liquid to the quasi-one-dimensional regime can provide insight into the underlying physics of this system and reveal new behavior. Here we describe magnetotransport experiments on narrow LaAlO3/SrTiO3 structures created by a conductive atomic force microscope lithography technique. Four-terminal local transport measurements on ~10-nm-wide Hall bar structures yield longitudinal resistances that are comparable to the resistance quantum h/e2 and independent of the channel length. Large nonlocal resistances (as large as 10^4 ohms) are observed in some but not all structures with separations between current and voltage that are large compared to the 2D mean-free path. The nonlocal transport is strongly suppressed by the onset of superconductivity below ~200 mK. The origin of these anomalous transport signatures is not understood, but may arise from coherent transport defined by strong spin-orbit coupling and/or magnetic interactions.

preprint2013arXiv

Electro-Mechanical Response of Top-Gated LaAlO3/SrTiO3 Heterostructures

LaAlO3/SrTiO3 heterostructures are known to exhibit a sharp, hysteretic metal-insulator transition (MIT) with large enhanced capacitance near depletion. To understand the physical origin of this behavior, the electromechanical response of top-gated LaAlO3/SrTiO3 heterostructures is probed using two simultaneous measurement techniques: piezoforce microscopy (PFM) and capacitance spectroscopy. PFM measurements reveal local variations in the hysteretic response, which is directly correlated with capacitance measurements. The enhanced capacitance at the MIT is linked to charging/discharging dynamics of nanoscale conducting islands, which are revealed through PFM imaging and time-resolved capacitance and piezoresponse measurements.

preprint2013arXiv

Room-Temperature Electronically-Controlled Ferromagnetism at the LaAlO3/SrTiO3 Interface

Reports of emergent conductivity, superconductivity, and magnetism at oxide interfaces have helped to fuel intense interest in their rich physics and technological potential. Here we employ magnetic force microscopy to search for room-temperature magnetism in the well-studied LaAlO3/SrTiO3 system. Using electrical top gating to deplete electrons from the oxide interface, we directly observe an in-plane ferromagnetic phase with sharply defined domain walls. Itinerant electrons, introduced by a top gate, align antiferromagnetically with the magnetization, at first screening and then destabilizing it as the conductive state is reached. Subsequent depletion of electrons results in a new, uncorrelated magnetic pattern. This newfound control over emergent magnetism at the interface between two non-magnetic oxides portends a number of important technological applications.

preprint2012arXiv

Nonlocal Piezoresponse of LaAlO3/SrTiO3 Heterostructures

The hysteretic piezoelectric response in LaAlO3/SrTiO3 heterostructures can provide important insights into the mechanism for interfacial conductance and its metastability under various conditions. We have performed a variety of nonlocal piezoelectric force microscopy experiments on 3 unit cell LaAlO3/SrTiO3 heterostructures. A hysteretic piezoresponse is observed under various environmental and driving conditions. The hysteresis is suppressed when either the sample is placed in vacuum or the interface is electrically grounded. We present a simple physical model which can account for the observed phenomena.

preprint2012arXiv

Three-dimensional polarization imaging of (Ba,Sr)TiO3:MgO composites

The dielectric tuning and loss of (Ba,Sr)TiO3:MgO bulk composites depend strongly on the connectivity and interaction among the two phases. To investigate this relationship, the polar structure and dynamics of these composites is mapped as a function of space and time using a pair of three-dimensional probes: second-harmonic confocal scanning optical microscopy (SH-CSOM), which maps ferroelectric polarization in three dimensions, and time-resolved scanning optical microscopy (TR-CSOM), which maps polarization dynamics along two spatial dimensions and one time dimension. SH-CSOM measurements reveal a high degree of homogeneity within the (Ba,Sr)TiO3 regions, while TR-CSOM measurements indicate that topologically connected regions respond with a spatially uniform phase.

preprint2011arXiv

Cooper Pair Writing at the LaAlO3/SrTiO3 Interface

The LaAlO3/SrTiO3 interface provides a unique platform for controlling the electronic properties of the superconducting semiconductor SrTiO3. Prior investigations have shown that two-dimensional superconductivity can be produced at the LaAlO3/SrTiO3 interface and tuned electrostatically. The recently demonstrated reversible control of the metal-insulator transition at the same interface using conductive atomic force microscopy (c-AFM) raises the question of whether this room-temperature technique can produce structures that exhibit superconducting, normal metallic and insulating phases at sub-Kelvin temperatures. Here we report low-temperature magnetotransport experiments on conducting structures defined at an otherwise insulating LaAlO3/SrTiO3 interface. A quantum phase transition associated with the formation of Cooper pairs is observed in these predefined structures at sub-Kelvin temperatures. However, a finite resistance remains even at the lowest temperature. At higher magnetic fields, interfaces with high mobility also exhibit strong Shubnikov-de Haas oscillations as well as a larger Ginsburg-Landau coherence length. Cooper pair localization, spin-orbit coupling, and finite-size effects may factor into an explanation for some of the unusual properties observed.

preprint2011arXiv

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ fine-probe electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscale SiC precipitates that serve as templates for subsequent Ge quantum dot self-assembly during heteroepitaxy. This templating approach has so far produced interdot spacings down to 22.5 nm, and smaller spacings should be possible. We investigate the templated feature evolution during UHV processing to identify key mechanisms that must be controlled in order to preserve pattern fidelity and reduce broadening of the quantum dot size distribution. A key finding is that the presence of a small background of excess carbon reduces Ge surface diffusion, thereby suppressing coarsening to relatively high temperatures. In fact, coarsening of the carbonaceous nanodot template prior to conversion to SiC can be a more important contributor to size dispersion, and must be avoided through control of thermal budget.

preprint2011arXiv

Quantum transport in oxide nanostructures

We describe magnetotransport experiments performed on Hall crosses made from quantum wires at LaAlO3/SrTiO3 interfaces. Shubnikov-de Haas oscillations measured in a 14-nm wide structure exhibit modulations that are consistent with spin-orbit coupling or valley degeneracies. Hall measurements performed on the 6 nm-wide Hall cross reveal dissipative coupling to magnetic phases. Hall plateaus are observed that deviate significantly from two-dimensional quantum Hall counterparts. Non-monotonic dips in the Hall resistance are attributed to one-dimensional confinement and spin-orbit coupling.

preprint2011arXiv

Spatial Analogue of Quantum Spin Dynamics via Spin-Orbit Interaction

We map electron spin dynamics from time to space in quantum wires with spatially uniform and oscillating Rashba spin-orbit coupling. The presence of the spin-orbit interaction introduces pseudo-Zeeman couplings of the electron spins to effective magnetic fields. We show that by periodically modulating the spin-orbit coupling along the quantum wire axis, it is possible to create the spatial analogue of spin resonance, without the need for any real magnetic fields. The mapping of time-dependent operations onto a spatial axis suggests a new mode for quantum information processing in which gate operations are encoded into the band structure of the material. We describe a realization of such materials within nanowires at the interface of LaAlO3/SrTiO3 heterostructures.

preprint2010arXiv

"Water-cycle" mechanism for writing and erasing nanostructures at the LaAlO3/SrTiO3 interface

Nanoscale control of the metal-insulator transition in LaAlO3/ SrTiO3 heterostructures can be achieved using local voltages applied by a conductive atomic-force microscope probe. One proposed mechanism for the writing and erasing process involves an adsorbed H2O layer at the top LaAlO3 surface. In this picture, water molecules dissociates into OH- and H+ which are then selectively removed by a biased AFM probe. To test this mechanism, writing and erasing experiments are performed in a vacuum AFM using various gas mixtures. Writing ability is suppressed in those environments where H2O is not present. The stability of written nanostructures is found to be strongly associated with the ambient environment. The self-erasure process in air can be strongly suppressed by creating a modest vacuum or replacing the humid air with dry inert gas. These experiments provide strong constraints for theories of both the writing process as well as the origin of interfacial conductance.

preprint2010arXiv

Coherent soft-mode phonon generation and detection in ultrathin SrTiO3 grown directly on silicon

Time-resolved two color pump-probe polarization spectroscopy was performed at room temperature on SrTiO3 films grown directly on Si with film thickness varying from 2 nm to 7.8 nm. The E soft mode with a characteristic frequency of 0.2 THz is impulsively generated and measured in these coherently strained tetragonal phase SrTiO3 thin films. Another over-damped signal observed indicates the possible relaxational hopping of Ti ion between double potential wells. The dependence of the coherent phonon signal on pump and probe laser polarization helps to identify the phonon modes.

preprint2010arXiv

Localized microwave resonances in strained SrTiO3 thin films

The frequency-dependent polar dynamics of strained SrTiO3 films grown on DyScO3 are investigated using time-resolved confocal scanning optical microscopy. Microwave frequency electric fields are synchronized with a mode-locked laser and applied in-plane to the sample, while the temporal response is probed optically. Local spectroscopic information is obtained with <1 um spatial resolution over the frequency range 2-4 GHz. Investigation of the SrTiO3/DyScO3 system reveals resonances that are localized both in space and in frequency.

preprint2010arXiv

Nanoscale rectification at the LaAlO3/SrTiO3 interface

Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.

preprint2010arXiv

Rewritable nanoscale oxide photodetector

Nanophotonic devices seek to generate, guide, and/or detect light using structures whose nanoscale dimensions are closely tied to their functionality. Semiconducting nanowires, grown with tailored optoelectronic properties, have been successfully placed into devices for a variety of applications. However, the integration of photonic nanostructures with electronic circuitry has always been one of the most challenging aspects of device development. Here we report the development of rewritable nanoscale photodetectors created at the interface between LaAlO3 and SrTiO3. Nanowire junctions with characteristic dimensions 2-3 nm are created using a reversible AFM writing technique. These nanoscale devices exhibit a remarkably high gain for their size, in part because of the large electric fields produced in the gap region. The photoconductive response is gate-tunable and spans the visible-to-near-infrared regime. The ability to integrate rewritable nanoscale photodetectors with nanowires and transistors in a single materials platform foreshadows new families of integrated optoelectronic devices and applications.

preprint2010arXiv

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation across a potential barrier controlled by the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

preprint2010arXiv

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

The interface between polar LaAlO3 and non-polar SrTiO3 exhibits a remarkable variety of electronic behavior associated with the formation of an interfacial quasi-two-dimensional electron gas (q-2DEG). By "sketching" patterns of charge on the top LaAlO3 surface, the LaAlO3/SrTiO3 interface conductance can be controlled with near-atomic spatial resolution. Using this technique, a sketch-based oxide nanotransistor (SketchFET) was demonstrated with a minimum feature size of just two nanometers. Here we report direct measurements of the potential barriers and electronic coupling between nanowire segments within a SketchFET device. Near room temperature, switching is governed by thermally activated field emission from the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

preprint2009arXiv

Tailoring Effective Exchange Interactions via Domain Walls in Coupled Heisenberg Rings

The nature of the exchange coupling variation in an antiferromagnetic spin-1/2 system can be used to tailor its ground-state properties. In particular, dimerized Heisenberg rings containing domain walls have localized states which can serve as "flying spin qubits" when the domain walls are moved. We show theoretically that, when two of these rings are coupled, the movement of the domain walls leads to modulation of the effective exchange interaction between the qubits. Appropriately chosen configurations of domain walls can give rise to ferromagnetic effective exchange. We describe how these spin rings may be used as basic building blocks to construct quantum spin systems whose properties are tunable by virtue of the exchange variation within the rings.

preprint2002arXiv

Oxide-Semiconductor Materials for Quantum Computation

Scalable fault-tolerant quantum computer architectures require quantum gates that operate within a small fraction of the qubit decoherence time and with high accuracy over a bandwidth set by the decoherence rate. Electron spin quantum bits in Si are promising because of long decoherence times (~0.5 ms), but electrical gating schemes still seem problematic. Oxide-semiconductor heterostructures have the potential for precise electrical control of gate operations in the semiconductor, using optical rectification in the ferroelectric oxide. Accurate (~80 dB), local (~10 nm), dynamic (>THz) and programmable optical control over electric polarization in the ferroelectric can be achieved using existing technology. Optical techniques may also be useful in rapid initialization of the quantum computer, and for providing a source of initialized qubits to use for quantum error correction. Advantages of optical methods will be discussed within a framework proposed for a quantum information processor using ferroelectrically coupled electron spins and Ge quantum dots in Si.

preprint2002arXiv

Universal quantum computation with spin-1/2 pairs and Heisenberg exchange

An efficient and intuitive framework for universal quantum computation is presented that uses pairs of spin-1/2 particles to form logical qubits and a single physical interaction, Heisenberg exchange, to produce all gate operations. Only two Heisenberg gate operations are required to produce a controlled pi-phase shift, compared to 19 for exchange-only proposals employing three spins. Evolved from well-studied decoherence-free subspaces, this architecture inherits immunity from collective decoherence mechanisms. The simplicity and adaptability of this approach should make it attractive for spin-based quantum computing architectures.