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Researcher profile

Cheng Cen

Cheng Cen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phquant-ph

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Published work

3 published item(s)

preprint2020arXiv

Terahertz response of gadolinium gallium garnet (GGG) and gadolinium scandium gallium garnet (SGGG)

We report the magneto-optical response of Gadolinium Gallium Garnet (GGG) and Gadolinium Scandium Gallium Garnet (SGGG) at frequencies ranging from $300 \, \mathrm{GHz}$ to $1 \, \mathrm{THz}$, and determine the material response tensor. Within this frequency window, the materials exhibit nondispersive and low-loss optical responses. At low temperatures, significant THz Faraday rotations are found in the (S)GGG samples. Such strong gyroelectric response is likely associated with the high-spin paramagnetic state of the Gd$^{3+}$ ions. A model of the material response tensor is determined, together with the Verdet and magneto-optic constants.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nanoscale rectification at the LaAlO3/SrTiO3 interface

Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation across a potential barrier controlled by the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

0 citations0 reviewsNo code linkedOpen access