Source author record

Jeffrey M. Shainline

Jeffrey M. Shainline appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

9works
9topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2022arXiv

Demonstration of Superconducting Optoelectronic Single-Photon Synapses

Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light-speed communication with superconducting circuits for fast, energy-efficient computation. Monolithic integration of superconducting and photonic devices is necessary for the scaling of this technology. In the present work, superconducting-nanowire single-photon detectors are monolithically integrated with Josephson junctions for the first time, enabling the realization of superconducting optoelectronic synapses. We present circuits that perform analog weighting and temporal leaky integration of single-photon presynaptic signals. Synaptic weighting is implemented in the electronic domain so that binary, single-photon communication can be maintained. Records of recent synaptic activity are locally stored as current in superconducting loops. Dendritic and neuronal nonlinearities are implemented with a second stage of Josephson circuitry. The hardware presents great design flexibility, with demonstrated synaptic time constants spanning four orders of magnitude (hundreds of nanoseconds to milliseconds). The synapses are responsive to presynaptic spike rates exceeding 10 MHz and consume approximately 33 aJ of dynamic power per synapse event before accounting for cooling. In addition to neuromorphic hardware, these circuits introduce new avenues towards realizing large-scale single-photon-detector arrays for diverse imaging, sensing, and quantum communication applications.

preprint2021arXiv

An active dendritic tree can mitigate fan-in limitations in superconducting neurons

Superconducting electronic circuits have much to offer with regard to neuromorphic hardware. Superconducting quantum interference devices (SQUIDs) can serve as an active element to perform the thresholding operation of a neuron's soma. However, a SQUID has a response function that is periodic in the applied signal. We show theoretically that if one restricts the total input to a SQUID to maintain a monotonically increasing response, a large fraction of synapses must be active to drive a neuron to threshold. We then demonstrate that an active dendritic tree (also based on SQUIDs) can significantly reduce the fraction of synapses that must be active to drive the neuron to threshold. In this context, the inclusion of a dendritic tree provides the dual benefits of enhancing the computational abilities of each neuron and allowing the neuron to spike with sparse input activity.

preprint2020arXiv

Low-loss, high-bandwidth fiber-to-chip coupling using capped adiabatic tapered fibers

We demonstrate adiabatically tapered fibers terminating in sub-micron tips that are clad with a higher-index material for coupling to an on-chip waveguide. This cladding enables coupling to a high-index waveguide without losing light to the buried oxide. A technique to clad the tip of the tapered fiber with a higher-index polymer is introduced. Conventional tapered waveguides and forked tapered waveguide structures are investigated for coupling from the clad fiber to the on-chip waveguide. We find the forked waveguide facilitates alignment and packaging, while the conventional taper leads to higher bandwidth. The insertion loss from a fiber through a forked coupler to a sub-micron silicon nitride waveguide is 1.1 dB and the 3 dB-bandwidth is 90 nm. The coupling loss in the packaged device is 1.3 dB. With a fiber coupled to a conventional tapered waveguide, the loss is 1.4 dB with a 3 dB bandwidth extending beyond the range of the measurement apparatus, estimated to exceed 250 nm.

preprint2020arXiv

Optimization of photoluminescence from W centers in silicon-on-insulator

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $μ$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stopping range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stopping range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.

preprint2020arXiv

Superconducting microwire detectors with single-photon sensitivity in the near-infrared

We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 μm to 3 μm. The devices achieve saturated internal detection efficiency at 1.55 μm wavelength and exhibit maximum count rates in excess of 10^5 s^-1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred microns exhibit critical currents in excess of 50% of the depairing current. A meandered detector with 2.0 μm wire width is demonstrated over a surface area of 362x362 μm^2, showcasing the material and device quality achieved.

preprint2019arXiv

Does Cosmological Evolution Select for Technology?

If the parameters defining the physics of our universe departed from their present values, the observed rich structure and complexity would not be supported. This article considers whether similar fine-tuning of parameters applies to technology. The anthropic principle is one means of explaining the observed values of the parameters. This principle constrains physical theories to allow for our existence, yet the principle does not apply to the existence of technology. Cosmological natural selection has been proposed as an alternative to anthropic reasoning. Within this framework, fine-tuning results from selection of universes capable of prolific reproduction. It was originally proposed that reproduction occurs through singularities resulting from supernovae, and subsequently argued that life may facilitate the production of the singularities that become offspring universes. Here I argue technology is necessary for production of singularities by living beings, and ask whether the physics of our universe has been selected to simultaneously enable stars, intelligent life, and technology capable of creating progeny. Specific technologies appear implausibly equipped to perform tasks necessary for production of singularities, potentially indicating fine-tuning through cosmological natural selection. These technologies include silicon electronics, superconductors, and the cryogenic infrastructure enabled by the thermodynamic properties of liquid helium. Numerical studies are proposed to determine regions of physical parameter space in which the constraints of stars, life, and technology are simultaneously satisfied. If this overlapping parameter range is small, we should be surprised that physics allows technology to exist alongside us. The tests do not call for new astrophysical or cosmological observations. Only computer simulations of well-understood condensed matter systems are required.

preprint2015arXiv

Quantum-correlated photon pairs generated in a commercial 45nm complementary metal-oxide semiconductor microelectronics chip

Correlated photon pairs are a fundamental building block of quantum photonic systems. While pair sources have previously been integrated on silicon chips built using customized photonics manufacturing processes, these often take advantage of only a small fraction of the established techniques for microelectronics fabrication and have yet to be integrated in a process which also supports electronics. Here we report the first demonstration of quantum-correlated photon pair generation in a device fabricated in an unmodified advanced (sub-100nm) complementary metal-oxide-semiconductor (CMOS) process, alongside millions of working transistors. The microring resonator photon pair source is formed in the transistor layer structure, with the resonator core formed by the silicon layer typically used for the transistor body. With ultra-low continuous-wave on-chip pump powers ranging from 5 $μ$W to 400 $μ$W, we demonstrate pair generation rates between 165 Hz and 332 kHz using >80% efficient WSi superconducting nanowire single photon detectors. Coincidences-to-accidentals ratios consistently exceeding 40 were measured with a maximum of 55. In the process of characterizing this source we also accurately predict pair generation rates from the results of classical four-wave mixing measurements. This proof-of-principle device demonstrates the potential of commercial CMOS microelectronics as an advanced quantum photonics platform with capability of large volume, pristine process control, and where state-of-the-art high-speed digital circuits could interact with quantum photonic circuits.

preprint2014arXiv

Photonic Crystal Microcavities in a Microelectronics 45nm SOI CMOS Technology

We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a standard microelectronics design flow meeting process design rules, and fabricated alongside transistors native to the process. We demonstrate both 1520nm wavelength and 1180nm cavity designs using different cavity implementations due to design rule constraints. For the 1520nm and 1180nm designs, loaded quality factors of 2,000 and 4,000 are measured, and intrinsic quality factors of 100,000 and 60,000 are extracted. We also demonstrate an evanescent coupling geometry which decouples the cavity and waveguide-coupling design.

preprint2013arXiv

Ultra-low-loss CMOS-Compatible Waveguide Crossing Arrays Based on Multimode Bloch Waves and Imaginary Coupling

We experimentally demonstrate broadband waveguide crossing arrays showing ultra low loss down to $0.04\,$dB/crossing ($0.9\%$), matching theory, and crosstalk suppression over $35\,$dB, in a CMOS-compatible geometry. The principle of operation is the tailored excitation of a low-loss spatial Bloch wave formed by matching the periodicity of the crossing array to the difference in propagation constants of the 1$^\text{st}$- and 3$^\text{rd}$-order TE-like modes of a multimode silicon waveguide. Radiative scattering at the crossing points acts like a periodic imaginary-permittivity perturbation that couples two supermodes, which results in imaginary (radiative) propagation-constant splitting and gives rise to a low-loss, unidirectional breathing Bloch wave. This type of crossing array provides a robust implementation of a key component enabling dense photonic integration.