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Researcher profile

Jeff Chiles

Jeff Chiles contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phphysics.ins-detphysics.opticsArtificial Intelligenceastro-ph.COcond-mat.supr-conhep-exhep-phNeural and Evolutionary Computing

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Published work

5 published item(s)

preprint2022arXiv

Demonstration of Superconducting Optoelectronic Single-Photon Synapses

Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light-speed communication with superconducting circuits for fast, energy-efficient computation. Monolithic integration of superconducting and photonic devices is necessary for the scaling of this technology. In the present work, superconducting-nanowire single-photon detectors are monolithically integrated with Josephson junctions for the first time, enabling the realization of superconducting optoelectronic synapses. We present circuits that perform analog weighting and temporal leaky integration of single-photon presynaptic signals. Synaptic weighting is implemented in the electronic domain so that binary, single-photon communication can be maintained. Records of recent synaptic activity are locally stored as current in superconducting loops. Dendritic and neuronal nonlinearities are implemented with a second stage of Josephson circuitry. The hardware presents great design flexibility, with demonstrated synaptic time constants spanning four orders of magnitude (hundreds of nanoseconds to milliseconds). The synapses are responsive to presynaptic spike rates exceeding 10 MHz and consume approximately 33 aJ of dynamic power per synapse event before accounting for cooling. In addition to neuromorphic hardware, these circuits introduce new avenues towards realizing large-scale single-photon-detector arrays for diverse imaging, sensing, and quantum communication applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

New Constraints on Dark Photon Dark Matter with Superconducting Nanowire Detectors in an Optical Haloscope

Uncovering the nature of dark matter is one of the most important goals of particle physics. Light bosonic particles, such as the dark photon, are well-motivated candidates: they are generally long-lived, weakly-interacting, and naturally produced in the early universe. In this work, we report on LAMPOST (Light $A'$ Multilayer Periodic Optical SNSPD Target), a proof-of-concept experiment searching for dark photon dark matter in the eV mass range, via coherent absorption in a multi-layer dielectric haloscope. Using a superconducting nanowire single-photon detector (SNSPD), we achieve efficient photon detection with a dark count rate (DCR) of $\sim 6\times10^{-6}$ counts/s. We find no evidence for dark photon dark matter in the mass range of $\sim 0.7$-$0.8$ eV with kinetic mixing $ε\gtrsim 10^{-12}$, improving existing limits in $ε$ by up to a factor of two. With future improvements to SNSPDs, our architecture could probe significant new parameter space for dark photon and axion dark matter in the meV to 10 eV mass range.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient second harmonic generation in nanophotonic GaAs-on-insulator waveguides

Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $μ$m pump is converted to a 1.0 $μ$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{\circ}$C with a slope of 0.24 nm/$^{\circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low-loss, high-bandwidth fiber-to-chip coupling using capped adiabatic tapered fibers

We demonstrate adiabatically tapered fibers terminating in sub-micron tips that are clad with a higher-index material for coupling to an on-chip waveguide. This cladding enables coupling to a high-index waveguide without losing light to the buried oxide. A technique to clad the tip of the tapered fiber with a higher-index polymer is introduced. Conventional tapered waveguides and forked tapered waveguide structures are investigated for coupling from the clad fiber to the on-chip waveguide. We find the forked waveguide facilitates alignment and packaging, while the conventional taper leads to higher bandwidth. The insertion loss from a fiber through a forked coupler to a sub-micron silicon nitride waveguide is 1.1 dB and the 3 dB-bandwidth is 90 nm. The coupling loss in the packaged device is 1.3 dB. With a fiber coupled to a conventional tapered waveguide, the loss is 1.4 dB with a 3 dB bandwidth extending beyond the range of the measurement apparatus, estimated to exceed 250 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Superconducting microwire detectors with single-photon sensitivity in the near-infrared

We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 μm to 3 μm. The devices achieve saturated internal detection efficiency at 1.55 μm wavelength and exhibit maximum count rates in excess of 10^5 s^-1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred microns exhibit critical currents in excess of 50% of the depairing current. A meandered detector with 2.0 μm wire width is demonstrated over a surface area of 362x362 μm^2, showcasing the material and device quality achieved.

0 citations0 reviewsNo code linkedOpen access