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Researcher profile

Jared M. Johnson

Jared M. Johnson contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.ins-det

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Published work

4 published item(s)

preprint2016arXiv

High Current Density 2D/3D Esaki Tunnel Diodes

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

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preprint2016arXiv

Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm^2 at 7.6 V, with a low series device resistance of 1 x 10^-5 ohm.cm^2.

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preprint2016arXiv

Three-Dimensional Imaging of Individual Point Defects Using Selective Detection Angles in Annular Dark Field Scanning Transmission Electron Microscopy

We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants with high precision. Using multislice STEM imaging and diffraction simulations of beta-Ga2O3 and SrTiO3, we show that selecting a small range of low scattering angles can make the contrast of the defect-containing atomic columns substantially more depth-dependent. The origin of the depth-dependence is the de-channeling of electrons due to the existence of a point defect in the atomic column, which creates extra ripples at low scattering angles. We show that, by capturing the de-channeling signal with narrowly selected annular dark field angles (e.g. 20-40 mrad), the contrast of a column containing a point defect in the image can be significantly enhanced. The effect of sample thickness, crystal orientation, probe convergence angle, and experimental uncertainty will also be discussed. Our new technique can therefore create new opportunities for highly precise 3D structural characterization of individual point defects in functional materials.

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preprint2015arXiv

Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light emitters. In this work, we show that efficient interband tunneling can be used for non-equilibrium injection of holes into ultraviolet emitters. Polarization-engineered tunnel junctions were used to enhance tunneling probability by several orders of magnitude over a PN homojunction, leading to highly efficient tunnel injection of holes to ultraviolet light emitters. This demonstration of efficient interband tunneling introduces a new paradigm for design of ultra-violet light emitting diodes and diode lasers, and enables higher efficiency and lower cost ultra-violet emitters.

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