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Researcher profile

Jacek Gosciniak

Jacek Gosciniak contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallphysics.opticsphysics.ins-det

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Published work

4 published item(s)

preprint2020arXiv

Comparative Analysis of Room Temperature Plasmonic Graphene Hot Electron Bolometric Photodetectors

We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of AW-1, and high speed on the scale of 100s of GHz. Performance evaluation is based on a theory of bolometric effect originating from the band nonparabolicity of graphene. Results compare favorably with the state-of-the-art plasmonic bolometric photodetectors, predicting up to two orders of magnitude increase in a responsivity while keeping speed on the same level, defined by the electron-lattice scattering time in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

On-chip ultrafast plasmonic graphene hot electron bolometric photodetector

We investigate waveguide-integrated plasmonic graphene photodetector operating based on the hot carrier photo-bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of AW-1 and high speed on the scale of 100s of GHz. We develop a theory of bolometric effect originating from the band nonparabolicity of graphene and estimate responsivity due to bolometric effect is shown to significantly surpass the responsivity of co-existing photo-conductive effect thus convincingly demonstrating the dominance of bolometric effect. Based on the theory we propose a novel detector configuration based on hybrid waveguide that allows for efficient absorption in the graphene over short distance and subsequently a large change of conductivity. The results demonstrate the potential of graphene for high-speed communication systems.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

CMOS-compatible titanium nitride for on-chip plasmonic Schottky photodetector

Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined structure employs an asymmetric metal-semiconductor-metal waveguide structure with one of the electrodes being gold and the second either gold, titanium or titanium nitride. Apart from the excellent optical properties desired for this type of photodetector such as high absorption losses and reasonably high real part of the permittivity, titanium nitride is a CMOS-compatible material that enables easy integration with existing CMOS technology. For the first time, we find a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.69 eV. This value ensures very high signal-to-noise ratio of the photodetector operating at a wavelength of 1550 nm. Additionally, TiN provides shorter penetration depth of the mode into metal compared to Ti, which enhances transmission probability of hot electrons to a semiconductor and gives rise to responsivity enhancement.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Plasmonic graphene photodetector based on channel photo-thermoelectric effect

We propose an on-chip CMOS compatible graphene plasmonic photodetector based on the photo-thermoelectric effect (PTE) that occurs across an entire homogeneous graphene channel. The proposed photodetector incorporates the long-range dielectric-loaded surface plasmon polariton (LR-DLSPP) waveguide with a metal stripe serving simultaneously as a plasmon supporting metallic material and one of the metal electrodes. Large in-plane component of the transverse magnetic (TM) plasmonic mode can couple efficiently to the graphene causing large temperature increases across an entire graphene channel with a maximum located at the metal stripe edge. As a result, the electronic temperatures exceeding 12000K at input power of only a few tens of μW can be obtained at the telecom wavelength of 1550nm. Even with limitations such as the melting temperature of graphene (T= 4510 K), a responsivity exceeding at least 200 A/W is achievable at telecom wavelength of 1550 nm. It is also shown that under certain operation conditions, the PTE channel photocurrent can be isolated from photovoltaic and p-n junction PTE contributions providing an efficient way for optimizing the overall photodetector performance.

0 citations0 reviewsNo code linkedOpen access