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Researcher profile

Jacob B. Khurgin

Jacob B. Khurgin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsphysics.app-phcond-mat.mes-hall

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Published work

9 published item(s)

preprint2025arXiv

Pathway to Optical-Cycle Dynamic Photonics: Extreme Electron Temperatures in Transparent Conducting Oxides

We find that transparent conducting oxides (TCOs) exhibit oscillatory (sign-reversing) dynamics on a few optical cycle timescale under extreme electron temperatures. We demonstrate a mechanism for such transient dynamics and present an inverse-designed multilayer cavity incorporating an ultrathin TCO layer that supports the oscillatory behavior. This approach yields transmittance oscillations with a period of ~20 fs, which corresponds to three optical cycles of the probe beam. To achieve a similar oscillatory modulation in the refractive index, we incorporate a TCO electron-acceptor layer on top of the inverse-designed cavity, enabling thermionic carrier injection at the TCO heterojunction. The resulting acceptor layer achieves a striking Δn response time as short as 9 fs, approaching a single optical cycle, and is further tunable to sub-cycle timescales. The findings not only clarify the elusive transient physics in TCOs but also demonstrate, for the first time, the critical role of electron temperatures in driving oscillatory dynamic responses. More broadly, we establish TCO-based thermionic carrier injection as a practical route to novel time-varying photonic media operating on the timescale of an optical cycle, enabling time-reflection, time-refraction, and related dynamic phenomena from the visible to the infrared.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

$\hbar ω$ versus $\hbar \boldsymbol{k}$: Dispersion and Energy Constraints on Time-Varying Photonic Materials and Time Crystals

Photonic time-varying systems have attracted significant attention owing to their rich physics and potential opportunities for new and enhanced functionalities. In this context, the duality of space and time in wave physics has been particularly fruitful to uncover interesting physical effects in the temporal domain, such as reflection/refraction at temporal interfaces and momentum-bandgaps in time crystals. However, the characteristics of the temporal/frequency dimension, particularly its relation to causality and energy conservation ($\hbar ω$ is energy, whereas $\hbar \boldsymbol{k}$ is momentum), create challenges and constraints that are unique to time-varying systems and are not present in their spatially varying counterparts. Here, we overview two key physical aspects of time-varying photonics that have only received marginal attention so far, namely temporal dispersion and external power requirements, and explore their implications. We discuss how temporal dispersion, an inherent property of any causal material, makes the fields evolve continuously at sharp temporal interfaces and may limit the strength of fast temporal modulations and of various resulting effects. Furthermore, we show that changing the refractive index in time always involves large amounts of energy. We derive power requirements to observe a time-crystal response in one of the most popular material platforms in time-varying photonics, i.e., transparent conducting oxides, and we argue that these effects are almost always obscured by less exotic nonlinear phenomena. These observations and findings shed light on the physics and constraints of time-varying photonics, and may guide the design and implementation of future time-modulated photonic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

100 GHz Micrometer compact broadband Monolithic ITO Mach Zehnder Interferometer Modulator enabling 3500 times higher Packing Density

Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) based modulators capable of exceeding 100 GHz switching rates. Integrating ITO thin films atop a photonic waveguide, spectrally broadband, and compact MZI phase shifter. Remarkably, this allows integrating more than 3500 of these modulators within the same chip area as only one single silicon MZI modulator. The modulator design introduced here features a holistic photonic, electronic, and RF-based optimization and includes an asymmetric MZI tuning step to optimize the Extinction Ratio (ER) to Insertion Loss (IL) and dielectric thickness sweep to balance the tradeoffs between ER and speed. Driven by CMOS compatible bias voltage levels, this device is the first to address next generation modulator demands for processors of the machine intelligence revolution, in addition to the edge and cloud computing demands as well as optical transceivers alike.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High-Performance All-Optical Modulator Based on Graphene-hBN Heterostructures

Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits its interaction with guided optical modes, which results in a high switching energy per bit or low modulation efficiencies. Nonetheless, it is possible to enhance the interaction of guided light with graphene by nanophotonic means. Herein, we present a practical design of an all-optical modulator that is based on graphene and hexagonal boron nitride (hBN) heterostructures that are hybrid integrated into silicon slot waveguides. Using this device, a high extinction ratio (ER) of 7.3 dB, an ultralow insertion loss (IL) of <0.6 dB, and energy-efficient switching (<0.33 pJ/bit) are attainable for a 20μm long modulator with double layer graphene. In addition, the device performs ultrafast switching with a recovery time of <600 fs, and could potentially be employed as a high-performance all-optical modulator with an ultra-high bandwidth in the hundreds of GHz. Moreover, the modulation efficiency of the device is further enhanced by stacking additional layers of graphene-hBN heterostructures, while theoretically maintaining an ultrafast response. The proposed device exhibits highly promising performance metrics, which are expected to serve the needs of next-generation photonic computing systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Absorptive loss and band non-parabolicity as a physical origin of large nonlinearity in epsilon-near-zero materials

For decades, nonlinear optics has been used to control the frequency and propagation of light in unique ways enabling a wide range of applications such as ultrafast lasing, sub-wavelength imaging, and novel sensing methods. Through this, a key thread of research in the field has always been the development of new and improved nonlinear materials to empower these applications. Recently, epsilon-near-zero (ENZ) materials have emerged as a potential platform to enhanced nonlinear interactions, bolstered in large part due to the extreme refractive index tuning (Δn~ 0.1 - 1) of sub-micron thick films that has been demonstrated in literature. Despite this experimental success, the theory has lagged and is needed to guide future experimental efforts. Here, we construct a theoretical framework for the intensity-dependent refractive index of the most popular ENZ materials, heavily doped semiconductors. We demonstrate that the nonlinearity when excited below bandgap, is due to the modification of the effective mass of the electron sea which produces a shift in the plasma frequency. We discuss trends and trade-offs in the optimization of excitation conditions and material choice (such material loss, band structure, and index dispersion), and provide a figure of merit through which the performance of future materials may be evaluated. By illuminating the framework of the nonlinearity, we hope to propel future applications in this growing field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Comparative Analysis of Room Temperature Plasmonic Graphene Hot Electron Bolometric Photodetectors

We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of AW-1, and high speed on the scale of 100s of GHz. Performance evaluation is based on a theory of bolometric effect originating from the band nonparabolicity of graphene. Results compare favorably with the state-of-the-art plasmonic bolometric photodetectors, predicting up to two orders of magnitude increase in a responsivity while keeping speed on the same level, defined by the electron-lattice scattering time in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fast and slow nonlinearities in ENZ materials

Novel materials, with enhanced light-matter interaction capabilities, play an essential role in achieving the lofty goals of nonlinear optics. Recently, Epsilon-Near-Zero (ENZ) media have emerged as a promising candidate to enable the enhancement of several nonlinear processes including refractive index modulation and harmonic generation. Here, we analyze the optical nonlinearity of ENZ media to clarify the commonalities with other nonlinear media and its unique properties. We focus on transparent conducting oxides (TCOs) as the family of ENZ media with near zero permittivity in the near-infrared (telecom) band. We investigate the instantaneous and delayed nonlinearities. By identifying their common origin from the band nonparabolicity, we show that their relative strength is entirely determined by a ratio of the energy and momentum relaxation (or dephasing) times. Using this framework, we compare ENZ materials against the many promising nonlinear media that have been investigated in literature and show that while ENZ materials do not radically outpace the strength of traditional materials in either the fast or slow nonlinearity, they pack key advantages such as an ideal response time, intrinsic slow light enhancement, and broadband nature in a compact platform making them a valuable tool for ultrafast photonics applications for decades to come.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low Dimensional Material based Electro-Optic Phase Modulation Performance Analysis

Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven phase modulators, such as based on lithium niobate, offer low loss and high speed operation, their footprint of 10&#39;s of cm-scale is prohibitively large, especially for density-critical applications, for example in photonic neural networks. Ignoring modulators for quantum applications, where loss is critical, here we distinguish between current versus voltage-driven modulators. We focus on the former, since current-based schemes of emerging thin electro-optical materials have shown unity-strong index modulation suitable for heterogeneous integration into foundry waveguides. Here, we provide an in-depth ab-initio analysis of obtainable modulator performance based on heterogeneously integrating low-dimensional materials, i.e. graphene, thin films of indium tin oxide, and transition metal dichalcogenide monolayers into a plurality of optical waveguide designs atop silicon photonics. Using the fundamental modulator tradeoff of energy-bandwidth-product as a design-quality quantifier, we show that a small modal cross section, such as given by plasmonic modes, enables high-performance operation, physically realized by arguments on charge-distribution and low electrical resistance. An in-depth design understanding of phase-modulator performance, beyond doped-junctions in silicon, offers opportunities for micrometer-compact yet energy-bandwidth-ratio constrained modulators with timely opportunities to hardware-accelerate applications beyond data communication towards photonic machine intelligence.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

On-chip ultrafast plasmonic graphene hot electron bolometric photodetector

We investigate waveguide-integrated plasmonic graphene photodetector operating based on the hot carrier photo-bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of AW-1 and high speed on the scale of 100s of GHz. We develop a theory of bolometric effect originating from the band nonparabolicity of graphene and estimate responsivity due to bolometric effect is shown to significantly surpass the responsivity of co-existing photo-conductive effect thus convincingly demonstrating the dominance of bolometric effect. Based on the theory we propose a novel detector configuration based on hybrid waveguide that allows for efficient absorption in the graphene over short distance and subsequently a large change of conductivity. The results demonstrate the potential of graphene for high-speed communication systems.

0 citations0 reviewsNo code linkedOpen access