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Jacob B. Khurgin

Jacob B. Khurgin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallphysics.app-phcond-mat.mtrl-scicond-mat.other

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Published work

21 published item(s)

preprint2025arXiv

Pathway to Optical-Cycle Dynamic Photonics: Extreme Electron Temperatures in Transparent Conducting Oxides

We find that transparent conducting oxides (TCOs) exhibit oscillatory (sign-reversing) dynamics on a few optical cycle timescale under extreme electron temperatures. We demonstrate a mechanism for such transient dynamics and present an inverse-designed multilayer cavity incorporating an ultrathin TCO layer that supports the oscillatory behavior. This approach yields transmittance oscillations with a period of ~20 fs, which corresponds to three optical cycles of the probe beam. To achieve a similar oscillatory modulation in the refractive index, we incorporate a TCO electron-acceptor layer on top of the inverse-designed cavity, enabling thermionic carrier injection at the TCO heterojunction. The resulting acceptor layer achieves a striking Δn response time as short as 9 fs, approaching a single optical cycle, and is further tunable to sub-cycle timescales. The findings not only clarify the elusive transient physics in TCOs but also demonstrate, for the first time, the critical role of electron temperatures in driving oscillatory dynamic responses. More broadly, we establish TCO-based thermionic carrier injection as a practical route to novel time-varying photonic media operating on the timescale of an optical cycle, enabling time-reflection, time-refraction, and related dynamic phenomena from the visible to the infrared.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

$\hbar ω$ versus $\hbar \boldsymbol{k}$: Dispersion and Energy Constraints on Time-Varying Photonic Materials and Time Crystals

Photonic time-varying systems have attracted significant attention owing to their rich physics and potential opportunities for new and enhanced functionalities. In this context, the duality of space and time in wave physics has been particularly fruitful to uncover interesting physical effects in the temporal domain, such as reflection/refraction at temporal interfaces and momentum-bandgaps in time crystals. However, the characteristics of the temporal/frequency dimension, particularly its relation to causality and energy conservation ($\hbar ω$ is energy, whereas $\hbar \boldsymbol{k}$ is momentum), create challenges and constraints that are unique to time-varying systems and are not present in their spatially varying counterparts. Here, we overview two key physical aspects of time-varying photonics that have only received marginal attention so far, namely temporal dispersion and external power requirements, and explore their implications. We discuss how temporal dispersion, an inherent property of any causal material, makes the fields evolve continuously at sharp temporal interfaces and may limit the strength of fast temporal modulations and of various resulting effects. Furthermore, we show that changing the refractive index in time always involves large amounts of energy. We derive power requirements to observe a time-crystal response in one of the most popular material platforms in time-varying photonics, i.e., transparent conducting oxides, and we argue that these effects are almost always obscured by less exotic nonlinear phenomena. These observations and findings shed light on the physics and constraints of time-varying photonics, and may guide the design and implementation of future time-modulated photonic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

100 GHz Micrometer compact broadband Monolithic ITO Mach Zehnder Interferometer Modulator enabling 3500 times higher Packing Density

Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) based modulators capable of exceeding 100 GHz switching rates. Integrating ITO thin films atop a photonic waveguide, spectrally broadband, and compact MZI phase shifter. Remarkably, this allows integrating more than 3500 of these modulators within the same chip area as only one single silicon MZI modulator. The modulator design introduced here features a holistic photonic, electronic, and RF-based optimization and includes an asymmetric MZI tuning step to optimize the Extinction Ratio (ER) to Insertion Loss (IL) and dielectric thickness sweep to balance the tradeoffs between ER and speed. Driven by CMOS compatible bias voltage levels, this device is the first to address next generation modulator demands for processors of the machine intelligence revolution, in addition to the edge and cloud computing demands as well as optical transceivers alike.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

High-Performance All-Optical Modulator Based on Graphene-hBN Heterostructures

Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits its interaction with guided optical modes, which results in a high switching energy per bit or low modulation efficiencies. Nonetheless, it is possible to enhance the interaction of guided light with graphene by nanophotonic means. Herein, we present a practical design of an all-optical modulator that is based on graphene and hexagonal boron nitride (hBN) heterostructures that are hybrid integrated into silicon slot waveguides. Using this device, a high extinction ratio (ER) of 7.3 dB, an ultralow insertion loss (IL) of <0.6 dB, and energy-efficient switching (<0.33 pJ/bit) are attainable for a 20μm long modulator with double layer graphene. In addition, the device performs ultrafast switching with a recovery time of <600 fs, and could potentially be employed as a high-performance all-optical modulator with an ultra-high bandwidth in the hundreds of GHz. Moreover, the modulation efficiency of the device is further enhanced by stacking additional layers of graphene-hBN heterostructures, while theoretically maintaining an ultrafast response. The proposed device exhibits highly promising performance metrics, which are expected to serve the needs of next-generation photonic computing systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Absorptive loss and band non-parabolicity as a physical origin of large nonlinearity in epsilon-near-zero materials

For decades, nonlinear optics has been used to control the frequency and propagation of light in unique ways enabling a wide range of applications such as ultrafast lasing, sub-wavelength imaging, and novel sensing methods. Through this, a key thread of research in the field has always been the development of new and improved nonlinear materials to empower these applications. Recently, epsilon-near-zero (ENZ) materials have emerged as a potential platform to enhanced nonlinear interactions, bolstered in large part due to the extreme refractive index tuning (Δn~ 0.1 - 1) of sub-micron thick films that has been demonstrated in literature. Despite this experimental success, the theory has lagged and is needed to guide future experimental efforts. Here, we construct a theoretical framework for the intensity-dependent refractive index of the most popular ENZ materials, heavily doped semiconductors. We demonstrate that the nonlinearity when excited below bandgap, is due to the modification of the effective mass of the electron sea which produces a shift in the plasma frequency. We discuss trends and trade-offs in the optimization of excitation conditions and material choice (such material loss, band structure, and index dispersion), and provide a figure of merit through which the performance of future materials may be evaluated. By illuminating the framework of the nonlinearity, we hope to propel future applications in this growing field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Comparative Analysis of Room Temperature Plasmonic Graphene Hot Electron Bolometric Photodetectors

We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of AW-1, and high speed on the scale of 100s of GHz. Performance evaluation is based on a theory of bolometric effect originating from the band nonparabolicity of graphene. Results compare favorably with the state-of-the-art plasmonic bolometric photodetectors, predicting up to two orders of magnitude increase in a responsivity while keeping speed on the same level, defined by the electron-lattice scattering time in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fast and slow nonlinearities in ENZ materials

Novel materials, with enhanced light-matter interaction capabilities, play an essential role in achieving the lofty goals of nonlinear optics. Recently, Epsilon-Near-Zero (ENZ) media have emerged as a promising candidate to enable the enhancement of several nonlinear processes including refractive index modulation and harmonic generation. Here, we analyze the optical nonlinearity of ENZ media to clarify the commonalities with other nonlinear media and its unique properties. We focus on transparent conducting oxides (TCOs) as the family of ENZ media with near zero permittivity in the near-infrared (telecom) band. We investigate the instantaneous and delayed nonlinearities. By identifying their common origin from the band nonparabolicity, we show that their relative strength is entirely determined by a ratio of the energy and momentum relaxation (or dephasing) times. Using this framework, we compare ENZ materials against the many promising nonlinear media that have been investigated in literature and show that while ENZ materials do not radically outpace the strength of traditional materials in either the fast or slow nonlinearity, they pack key advantages such as an ideal response time, intrinsic slow light enhancement, and broadband nature in a compact platform making them a valuable tool for ultrafast photonics applications for decades to come.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Low Dimensional Material based Electro-Optic Phase Modulation Performance Analysis

Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven phase modulators, such as based on lithium niobate, offer low loss and high speed operation, their footprint of 10's of cm-scale is prohibitively large, especially for density-critical applications, for example in photonic neural networks. Ignoring modulators for quantum applications, where loss is critical, here we distinguish between current versus voltage-driven modulators. We focus on the former, since current-based schemes of emerging thin electro-optical materials have shown unity-strong index modulation suitable for heterogeneous integration into foundry waveguides. Here, we provide an in-depth ab-initio analysis of obtainable modulator performance based on heterogeneously integrating low-dimensional materials, i.e. graphene, thin films of indium tin oxide, and transition metal dichalcogenide monolayers into a plurality of optical waveguide designs atop silicon photonics. Using the fundamental modulator tradeoff of energy-bandwidth-product as a design-quality quantifier, we show that a small modal cross section, such as given by plasmonic modes, enables high-performance operation, physically realized by arguments on charge-distribution and low electrical resistance. An in-depth design understanding of phase-modulator performance, beyond doped-junctions in silicon, offers opportunities for micrometer-compact yet energy-bandwidth-ratio constrained modulators with timely opportunities to hardware-accelerate applications beyond data communication towards photonic machine intelligence.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

On-chip ultrafast plasmonic graphene hot electron bolometric photodetector

We investigate waveguide-integrated plasmonic graphene photodetector operating based on the hot carrier photo-bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of AW-1 and high speed on the scale of 100s of GHz. We develop a theory of bolometric effect originating from the band nonparabolicity of graphene and estimate responsivity due to bolometric effect is shown to significantly surpass the responsivity of co-existing photo-conductive effect thus convincingly demonstrating the dominance of bolometric effect. Based on the theory we propose a novel detector configuration based on hybrid waveguide that allows for efficient absorption in the graphene over short distance and subsequently a large change of conductivity. The results demonstrate the potential of graphene for high-speed communication systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Excitation of plasmonic nanoantennas with nonresonant and resonant electron tunnelling

A rigorous theory of photon emission accompanied inelastic tunnelling inside the gap of plasmonic nanoantennas has been developed. The disappointingly low efficiency of the electrical excitation of surface plasmon polaritons in these structures can be increased by orders of magnitude when a resonant tunnelling structure is incorporated inside the gap. Resonant tunnelling assisted surface plasmon emitter may become a key element in future electrically-driven nanoplasmonic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Hyperbolic Metamaterials and Coupled Surface Plasmon Polaritons: comparative analysis

We investigate the optical properties of sub-wavelength layered metal/dielectric structures, also known as hyperbolic metamaterials (HMMs), using exact analytical Kronig Penney (KP) model. We show that hyperbolic isofrequency surfaces exist for all combinations of layer permittivities and thicknesses, and the largest Purcell enhancements (PE) of spontaneous radiation are achieved away from the nominally hyperbolic region. Detailed comparison of field distributions, dispersion curves, and Purcell factors (PF) between the HMMs and Surface Plasmon Polaritons (SPPs) guided modes in metal/dielectric waveguides demonstrates that HMMs are nothing but weakly coupled gap or slab SPPs modes. Broadband PE is not specific to the HMMs and can be easily attained in single thin metallic layers. Furthermore, large wavevectors and PE are always combined with high loss, short propagation distances and large impedances; hence PE in HMMs is essentially a direct coupling of the energy into the free electron motion in the metal, or quenching of radiative lifetime. PE in HMMs is not related to the hyperbolicity per se but is simply the consequence of the strong dispersion of permittivity in the metals or polar dielectrics, as our conclusions are relevant also for the infrared HMMs occurring in nature. When it comes to enhancement of radiating processes and field concentrations, HMMs are not superior to far simpler plasmonic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Phonon lasing as a likely mechanism for density-dependent velocity saturation in GaN transistors

We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of the Fermi distribution in reciprocal space produces population inversion and gain for the LO phonons. Once this gain reaches a threshold value, the avalanche-like increase of LO emission causes a rapid loss of electron energy and momentum and leads to drift velocity saturation. Our simple model correctly predicts both the general trend of the saturation velocity decreasing with increasing electron density and the values of saturation velocity measured in our experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhancement of Two-photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further enhancement of nondegenerate 2PA will be observed in quantum wells (QWs) since the intraband matrix elements do not vanish near the band center as they do in the bulk, and the density of states in QWs is larger near the band edge. Here we present a perturbation-theory based theoretical description of nondegenerate 2PA in semiconductor QWs, where both frequency and polarization of two incident waves can vary independently. Analytical expressions for all possible permutations of frequencies and polarizations have been obtained, and the results are compared with degenerate 2PA in quantum wells along with degenerate and nondegenerate 2PA in bulk semiconductors. We show that using QWs in place of bulk semiconductors with both beams in the TM-polarized mode leads to an additional order of magnitude increase in the nondegenerate 2PA. Explicit calculations for GaAs QWs are presented.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

On the Origin of the Second-Order Nonlinearity in Strained Si-SiN Structures

The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for non-CMOS-compatible materials. While bulk Si is centrosymmetric and thus displays no second-order (\c{hi}(2)) effects, a body of experimental evidence accumulated in the last decade demonstrates that when a strain gradient is present, a significant \c{hi}(2) and Pockels coefficient can be observed. In this work we connect a strain-gradient-induced \c{hi}(2) with another strain-gradient-induced phenomenon, the flexoelectric effect. We show that even in the presence of an extremely strong strain gradient, the degree by which a nonpolar material like Si can be altered cannot possibly explain the order of magnitude of observed chi^(2) phenomena. At the same time, in a polar material like SiN, each bond has a large nonlinear polarizability, so when the inversion symmetry is broken by a strain gradient, a small (few degrees) re-orientation of bonds can engender chi^(2) of the magnitude observed experimentally. It is our view therefore that the origin of the nonlinear and electro-optic effects in strained Si structures lies in not in the Si itself, but in the material providing the strain: the silicon nitride cladding.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optically induced currents in dielectrics as a nonlinear optical effect

We show that recently observed DC currents produced by below-the-bandgap femtosecond pulses [1] can be explained as nonlinear optical effects based on multi-photon quantum interference and creation of an asymmetric distribution of virtual carriers in the conduction and valence bands. We establish an unambiguous connection between the nonlinear optical conductivity responsible for the observed DC currents and charges and the odd-order nonlinear optical susceptibilities of the material. Using a single well known measured value of the third order susceptibility (nonlinear index) of SiO2 we obtain excellent agreement with all the experimental data of [1] without resorting to extensive numerical modeling. A clear physical picture of the origin of the photo-induced currents and charges shows that the versatility of ultrafast (virtual) nonlinear optical phenomena extends even further than had been previously thought.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Prospects and merits of metal-clad semiconductor lasers from nearly UV to far IR

Using metal-clad (or plasmonic) waveguide structures in semiconductor lasers carries a promise of reduced size, threshold, and power consumption. This promise is put to a rigorous theoretical test, that takes into account increased waveguide loss, Auger recombination, and Purcell enhancement of spontaneous recombination. The conclusion is that purported benefits of metal waveguides are small to nonexistent for all the band-to-band and intersubband lasers operating from UV to Mid-IR range, with a prominent exception of far-IR and THz quantum cascade lasers. For these devices, however, metal waveguides already represent the state of the art, and the guiding mechanism in them has far more in common with a ubiquitous transmission line than with plasmonics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Two-dimensional exciton-polariton - light guiding by transition metal dichalcogenide monolayers

A monolayer of transition metal dichalcogenide (TMDC) is shown to be capable of supporting a guided optical mode below the exciton resonance, a two-dimensional exciton polariton. This visible or near IR mode is confined roughly within a micrometer from the monolayer and has propagation length exceeding 100 micrometers. The light guiding ability makes TMDC monolayers more versatile and potentially attractive photonic platform.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic states, pseudo-spin, and transport in the zinc-blende quantum wells and wires with vanishing band gap

We consider theoretically the electronic structure of quasi-two and quasi-one-dimensional heterostructures comprised of III-V and II-VI semiconductors such as InAs/GaInSb and HgCdTe. We show that not only a Dirac-like dispersion exists in these materials when the energy gap approaches zero, but that the states with opposite momentum are orthogonal (i.e. can be described by a pseudo-spin), which suppresses backscattering and thereby enhances the electron mobility, by analogy with the case of graphene. However, unlike in graphene, a quasi-one-dimensional quantum wire with zero gap can be realized, which should eliminate most of the scattering processes and lead to long coherence lengths required for both conventional and ballistic electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Model for quantum efficiency of guided mode plasmonic enhanced silicon Schottky detectors

Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict the quantum efficiency of guided mode internal photoemission photodetector with focus on the platform of silicon plasmonics. The model is supported by numerical simulations and comparison to experimental results. Finally, we discuss approaches for further enhancement of the quantum efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Second-harmonic generation induced by electric currents in GaAs

We demonstrate a new, nonlinear optical effect of electric currents. First, a steady current is generated by applying a voltage on a doped GaAs crystal. We demonstrate that this current induces second-harmonic generation of a probe laser pulse. Second, we optically inject a transient current in an undoped GaAs crystal by using a pair of ultrafast laser pulses, and demonstrate that it induces the same second-harmonic generation. In both cases, the induced second-order nonlinear susceptibility is proportional to the current density. This effect can be used for nondestructive, noninvasive, and ultrafast imaging of currents. These advantages are illustrated by the real-time observations of a coherent plasma oscillation and spatial resolution of current distribution in a device. This new effect also provides a mechanism for electrical control of the optical response of materials.

0 citations0 reviewsNo code linkedOpen access