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Researcher profile

J. Schwandt

J. Schwandt contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-dethep-ex

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Published work

7 published item(s)

preprint2022arXiv

Radiation damage uniformity in a SiPM

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $Φ$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $μ$m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to $U_\mathit{ov}$ = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements $U^{IV}_\mathit{bd}$ was extracted and compared to that of the breakdown voltage from the gain measurements $U^{G}_\mathit{bd}$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Self-heating Effect in Silicon-Photomultipliers

The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were performed with a KETEK SiPM, glued on an Al$_2$O$_3$ substrate, which is either directly connected to the temperature-controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM is illuminated by a LED operated in DC-mode. The SiPM current is measured and used to determine the steady-state temperature as a function of power dissipated in the multiplication region of the SiPM and thermal resistance, as well as the time dependencies for heating and cooling. This information can be used to correct the parameters determined for radiation-damaged SiPM for the effects of self-heating. The method can also be employed for packaged SiPMs with unknown thermal contact to a heat sink. The results presented in this paper are preliminary.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Study of the band-gap energy of radiation-damaged silicon

The transmission of silicon crystals irradiated by 24 GeV/c protons and reactor neutrons has been measured for photon energies, $Eγ$, between 0.95 and 1.3 eV. From the transmission data the absorption coefficient $α$ is calculated, and from $α(E_γ)$ the fluence dependence of the band-gap energy, $E_{gap}$, and the energy of transverse optical phonons, $E_{ph}$, determined. It is found that within the experimental uncertainties of about 1 meV neither $E_{gap}$ nor $E_{ph}$ depend on fluence up to the maximum fluence of $1 \times 10^{17}$ cm$^{-2}$ of the measurements. The value of $E_{gap}$ agrees within about 1 meV with the generally accepted value, if an exciton-binding energy of 15 meV is assumed. A similar agreement is found for $E_{ph}$. For the extraction of $E_{gap}$ and $E_{ph}$ the second derivative of $\sqrt{α(Eγ )}$ smoothed with a Gaussian kernel has been used.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?

A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area irradiated by 24 GeV/c protons to four 1MeV neutron equivalent fluences between 3E15 cm^2 and 13E15 cm^2. The measurement conditions were: Reverse voltages between 1V and 1000V, frequencies between 100Hz and 2MHz and temperatures of -20°C and -30°C. The position dependence of the electric field is parameterised by a linear dependence at the two sides of the diode, and a constant in the centre. The parameters as a function of voltage, temperature and irradiation fluence are determined by fits of the model to the data. For voltages below about 300V all data are well described by the model, and the results for the electric field agrees with expectations: Depleted high-field regions towards the two faces and a constant low electric field in the centre, with values which agrees with the field in an ohmic resistor with approximately the intrinsic resistivity of silicon. For conditions at which the low field region disappears and the diode is fully depleted, the method fails. This happens around 300V for the lowest irradiation fluence at -30°C, and at higher voltages for higher fluences and lower temperatures. In the conclusions the successes and problems of the method are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A computer program to simulate the response of SiPMs

A Monte Carlo program which simulates the response of SiPMs is presented. Input to the program are the mean number and the time distribution of Geiger discharges from light, as well as the dark-count rate. For every primary Geiger discharge from light and dark counts in an event, correlated Geiger discharges due to prompt and delayed cross-talk and after-pulses are simulated, and a table of the amplitudes and times of all Geiger discharges in a specified time window generated. A number of different physics-based models and statistical treatments for the simulation of correlated Geiger discharges can be selected. These lists for many events together with different options for the pulse shapes of single Geiger discharges are used to simulate charge spectra, as measured by a current-integrating charge-to-digital converter, or current transients convolved with an electronics response function, as recorded by a digital oscilloscope. The program can be used to compare simulations with different assumptions to experimental data, and thus find out which models are most appropriate for a given SiPM, optimise the operating conditions and readout for a given application or test programs which are used to extract SiPM parameters from experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Analysis methods for highly radiation-damaged SiPMs

Prototype SiPMs with 4384 pixels of dimensions $15 \times 15~μ$m$^2$ produced by KETEK have been irradiated with reactor neutrons to eight fluences between $10^9$ and $5\times 10^{14}$ cm$^{-2}$. For temperatures between $-30~^\circ $C and $+30~^\circ $C capacitance-voltage, admittance-frequency, current-forward voltage, current-reverse voltage and charge-voltage measurements with and without illumination by a sub-nanosecond laser have been performed. The data have been analysed using different methods in order to extract the dependence on neutron fluence and temperature of the electrical parameters, the breakdown oltage, the activation energy for the current generation, the dark-count rate and the response to light pulses. The results from the different analysis methods are compared.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated $n^+p$ pad sensors and by the analysis of edge-TCT data from non-irradiated $n^+p$ strip-detectors. The method is then used to determine the position dependent electric field and charge density in $n^+p$ strip detectors irradiated by reactor neutrons to fluences between 1 and $10 \times 10^{15}$ cm$^{-2}$ for forward-bias voltages between 25 V and up to 550 V and for reverse-bias voltages between 50 V and 800 V. In all cases the velocity profiles are well described. The electric fields and charge densities determined provide quantitative insights into the effects of radiation damage for silicon sensors by reactor neutrons.

0 citations0 reviewsNo code linkedOpen access