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E. Fretwurst

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physics.ins-det

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preprint2016arXiv

The influence of edge effects on the determination of the doping profile of silicon pad diodes

Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is shown that the doping concentration derived from the capacitance-voltage measurements with and without edge corrections differ significantly. After the edge correction, the bulk doping of the pad diodes is found to be uniform within +/- 1.5%. The voltage dependence of the edge capacitance is compared to the predictions of two simple models.

preprint2012arXiv

Design of the AGIPD Sensor for the European XFEL

For experiments at the European X-Ray Free-Electron Laser (XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements for the detector are a high dynamic range of 0, 1 - to more than 10E4 12.4 keV photons per pixel within an XFEL pulse duration of < 100 fs, and a radiation tolerance of doses up to 1 GGy for 3 years of operation. The detector will have 1024 x 1024 p+ pixels with a pixel size of 200 um x 200 um and will be manufactured on 500 um thick n-type silicon. The design value for the operating voltage is 500 V, however, for special applications an operation up to ~ 1000 V should be possible. Experimental data on the dose dependence of the surface density of oxide charges at the Si-SiO2 interface and the surface-current density have been implemented in the SYNOPSYS TCAD simulation program in order to optimize the design of the pixel and guard-ring layout. The methodology of the sensor design, the optimization of the most relevant parameters and the layout are demonstrated. Finally the simulated performance, in particular the breakdown voltage, dark current and inter-pixel capacitance as function of the X-ray dose will be presented.

preprint2011arXiv

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. One of the detector systems under development for the XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which consists of a pixel array with readout ASICs bump-bonded to a silicon sensor with pixels of 200 μm \times 200 μm. The particular requirements for the detector are a high dynamic range (0, 1 up to 10E5 12 keV photons/XFEL-pulse), a fast read-out and radiation tolerance up to doses of 1 GGy of 12 keV X-rays for 3 years of operation. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the SiO2 layer and interface traps at the Si-SiO2 interface will build up. As function of the 12 keV X-ray dose the microscopic defects in test structures and the macro- scopic electrical properties of segmented sensors have been investigated. From the test structures the oxide charge density, the density of interface traps and their properties as function of dose have been determined. It is found that both saturate (and even decrease) for doses above a few MGy. For segmented sensors surface damage introduced by the X-rays increases the full depletion voltage, the surface leakage current and the inter-pixel capacitance. In addition an electron accumulation layer forms at the Si-SiO2 interface which increases with dose and decreases with applied voltage. Using TCAD simulations with the dose dependent damage parameters obtained from the test struc- tures the results of the measurements can be reproduced. This allows the optimization of the sensor design for the XFEL requirements.

preprint2007arXiv

The design and performance of the ZEUS Micro Vertex detector

In order to extend the tracking acceptance, to improve the primary and secondary vertex reconstruction and thus enhancing the tagging capabilities for short lived particles, the ZEUS experiment at the HERA Collider at DESY installed a silicon strip vertex detector. The barrel part of the detector is a 63 cm long cylinder with silicon sensors arranged around an elliptical beampipe. The forward part consists of four circular shaped disks. In total just over 200k channels are read out using $2.9 {\rm m^2}$ of silicon. In this report a detailed overview of the design and construction of the detector is given and the performance of the completed system is reviewed.