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R. Klanner

R. Klanner appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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hep-exphysics.ins-dethep-ph

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Published work

38 published item(s)

preprint2022arXiv

Azimuthal correlations in photoproduction and deep inelastic $\boldsymbol{ep}$ scattering at HERA

Collective behaviour of final-state hadrons, and multiparton interactions are studied in high-multiplicity $ep$ scattering at a centre-of-mass energy $\sqrt{s}=318$ GeV with the ZEUS detector at HERA. Two- and four-particle azimuthal correlations, as well as multiplicity, transverse momentum, and pseudorapidity distributions for charged-particle multiplicities $N_{\textrm ch} \geq 20$ are measured. The dependence of two-particle correlations on the virtuality of the exchanged photon shows a clear transition from photoproduction to neutral current deep inelastic scattering. For the multiplicities studied, neither the measurements in photoproduction processes nor those in neutral current deep inelastic scattering indicate significant collective behaviour of the kind observed in high-multiplicity hadronic collisions at RHIC and the LHC. Comparisons of PYTHIA predictions with the measurements in photoproduction strongly indicate the presence of multiparton interactions from hadronic fluctuations of the exchanged photon.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Measurement of the cross-section ratio $σ_{ψ(2S )}/σ_{J/ψ(1S )}$ in exclusive photoproduction at HERA

The exclusive photoproduction reactions $γp \to J/ψ(1S) p$ and $γp \to ψ(2S) p$ have been measured at an $ep$ centre-of-mass energy of 318 GeV with the ZEUS detector at HERA using an integrated luminosity of 373 pb$^{-1}$. The measurement was made in the kinematic range $30 < W < 180$ GeV, $Q^2 < 1$ GeV$^2$ and $|t| < 1$ GeV$^2$, where $W$ is the photon--proton centre-of-mass energy, $Q^2$ is the photon virtuality and $t$ is the squared four-momentum transfer at the proton vertex. The decay channels used were $J/ψ(1S) \to μ^+ μ^-$, $ψ(2S) \to μ^+ μ^-$ and $ψ(2S) \to J/ψ(1S) π^+ π^-$ with subsequent decay $J/ψ(1S) \to μ^+ μ^-$. The ratio of the production cross sections, $R = σ_{ψ(2S)} / σ_{J/ψ(1S)}$, has been measured as a function of $W$ and $|t|$ and compared to previous data in photoproduction and deep inelastic scattering and with predictions of QCD-inspired models of exclusive vector-meson production, which are in reasonable agreement with the data.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Self-heating Effect in Silicon-Photomultipliers

The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating studies were performed with a KETEK SiPM, glued on an Al$_2$O$_3$ substrate, which is either directly connected to the temperature-controlled chuck of a probe station, or through layers of material with well-known thermal resistance. The SiPM is illuminated by a LED operated in DC-mode. The SiPM current is measured and used to determine the steady-state temperature as a function of power dissipated in the multiplication region of the SiPM and thermal resistance, as well as the time dependencies for heating and cooling. This information can be used to correct the parameters determined for radiation-damaged SiPM for the effects of self-heating. The method can also be employed for packaged SiPMs with unknown thermal contact to a heat sink. The results presented in this paper are preliminary.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Study of the band-gap energy of radiation-damaged silicon

The transmission of silicon crystals irradiated by 24 GeV/c protons and reactor neutrons has been measured for photon energies, $Eγ$, between 0.95 and 1.3 eV. From the transmission data the absorption coefficient $α$ is calculated, and from $α(E_γ)$ the fluence dependence of the band-gap energy, $E_{gap}$, and the energy of transverse optical phonons, $E_{ph}$, determined. It is found that within the experimental uncertainties of about 1 meV neither $E_{gap}$ nor $E_{ph}$ depend on fluence up to the maximum fluence of $1 \times 10^{17}$ cm$^{-2}$ of the measurements. The value of $E_{gap}$ agrees within about 1 meV with the generally accepted value, if an exciton-binding energy of 15 meV is assumed. A similar agreement is found for $E_{ph}$. For the extraction of $E_{gap}$ and $E_{ph}$ the second derivative of $\sqrt{α(Eγ )}$ smoothed with a Gaussian kernel has been used.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?

A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area irradiated by 24 GeV/c protons to four 1MeV neutron equivalent fluences between 3E15 cm^2 and 13E15 cm^2. The measurement conditions were: Reverse voltages between 1V and 1000V, frequencies between 100Hz and 2MHz and temperatures of -20°C and -30°C. The position dependence of the electric field is parameterised by a linear dependence at the two sides of the diode, and a constant in the centre. The parameters as a function of voltage, temperature and irradiation fluence are determined by fits of the model to the data. For voltages below about 300V all data are well described by the model, and the results for the electric field agrees with expectations: Depleted high-field regions towards the two faces and a constant low electric field in the centre, with values which agrees with the field in an ohmic resistor with approximately the intrinsic resistivity of silicon. For conditions at which the low field region disappears and the diode is fully depleted, the method fails. This happens around 300V for the lowest irradiation fluence at -30°C, and at higher voltages for higher fluences and lower temperatures. In the conclusions the successes and problems of the method are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A computer program to simulate the response of SiPMs

A Monte Carlo program which simulates the response of SiPMs is presented. Input to the program are the mean number and the time distribution of Geiger discharges from light, as well as the dark-count rate. For every primary Geiger discharge from light and dark counts in an event, correlated Geiger discharges due to prompt and delayed cross-talk and after-pulses are simulated, and a table of the amplitudes and times of all Geiger discharges in a specified time window generated. A number of different physics-based models and statistical treatments for the simulation of correlated Geiger discharges can be selected. These lists for many events together with different options for the pulse shapes of single Geiger discharges are used to simulate charge spectra, as measured by a current-integrating charge-to-digital converter, or current transients convolved with an electronics response function, as recorded by a digital oscilloscope. The program can be used to compare simulations with different assumptions to experimental data, and thus find out which models are most appropriate for a given SiPM, optimise the operating conditions and readout for a given application or test programs which are used to extract SiPM parameters from experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Influence of radiation damage on the absorption of near-infrared light in silicon

The absorption length, $λ_{abs}$, of light with wavelengths between 0.95 and 1.30$~μ$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been measured. It is found that $λ_{abs}$ decreases with fluence due to radiation-induced defects. A phenomenological parametrisation of the radiation-induced change of $λ_{abs}$ as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of $λ_{abs}$ with irradiation is confirmed by edge-TCT measurements on irradiated silicon strip detectors. Using the measured wavelength dependence of $λ_{abs}$, the change of the silicon band-gap with fluence is determined.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Analysis methods for highly radiation-damaged SiPMs

Prototype SiPMs with 4384 pixels of dimensions $15 \times 15~μ$m$^2$ produced by KETEK have been irradiated with reactor neutrons to eight fluences between $10^9$ and $5\times 10^{14}$ cm$^{-2}$. For temperatures between $-30~^\circ $C and $+30~^\circ $C capacitance-voltage, admittance-frequency, current-forward voltage, current-reverse voltage and charge-voltage measurements with and without illumination by a sub-nanosecond laser have been performed. The data have been analysed using different methods in order to extract the dependence on neutron fluence and temperature of the electrical parameters, the breakdown oltage, the activation energy for the current generation, the dark-count rate and the response to light pulses. The results from the different analysis methods are compared.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated $n^+p$ pad sensors and by the analysis of edge-TCT data from non-irradiated $n^+p$ strip-detectors. The method is then used to determine the position dependent electric field and charge density in $n^+p$ strip detectors irradiated by reactor neutrons to fluences between 1 and $10 \times 10^{15}$ cm$^{-2}$ for forward-bias voltages between 25 V and up to 550 V and for reverse-bias voltages between 50 V and 800 V. In all cases the velocity profiles are well described. The electric fields and charge densities determined provide quantitative insights into the effects of radiation damage for silicon sensors by reactor neutrons.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Combined QCD and electroweak analysis of HERA data

A simultaneous fit of parton distribution functions (PDFs) and electroweak parameters to HERA data on deep inelastic scattering is presented. The input data are the neutral current and charged current inclusive cross sections which were previously used in the QCD analysis leading to the HERAPDF2.0 PDFs. In addition, the polarisation of the electron beam was taken into account for the ZEUS data recorded between 2004 and 2007. Results on the vector and axial-vector couplings of the Z boson to u- and d-type quarks, on the value of the electroweak mixing angle and the mass of the W boson are presented. The values obtained for the electroweak parameters are in agreement with Standard Model predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Limits on the effective quark radius from inclusive $ep$ scattering at HERA

The high-precision HERA data allows searches up to TeV scales for Beyond the Standard Model contributions to electron-quark scattering. Combined measurements of the inclusive deep inelastic cross sections in neutral and charged current $ep$ scattering corresponding to a luminosity of around 1 fb$^{-1}$ have been used in this analysis. A new approach to the beyond the Standard Model analysis of the inclusive $ep$ data is presented; simultaneous fits of parton distribution functions together with contributions of "new physics" processes were performed. Results are presented considering a finite radius of quarks within the quark form-factor model. The resulting 95% C.L. upper limit on the effective quark radius is $0.43\cdot 10^{-16}$ cm.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measurement of the cross-section ratio sigma_{psi(2S)}/sigma_{J/psi(1S)} in deep inelastic exclusive ep scattering at HERA

The exclusive deep inelastic electroproduction of $ψ(2S)$ and $J/ψ(1S)$ at an $ep$ centre-of-mass energy of 317 GeV has been studied with the ZEUS detector at HERA in the kinematic range $2 < Q^2 < 80$ GeV$^2$, $30 < W < 210$ GeV and $|t| < 1$ GeV$^2$, where $Q^2$ is the photon virtuality, $W$ is the photon-proton centre-of-mass energy and $t$ is the squared four-momentum transfer at the proton vertex. The data for $2 < Q^2 < 5$ GeV$^2$ were taken in the HERA I running period and correspond to an integrated luminosity of 114 pb$^{-1}$. The data for $5 < Q^2 < 80$ GeV$^2$ are from both HERA I and HERA II periods and correspond to an integrated luminosity of 468 pb$^{-1}$. The decay modes analysed were $μ^+μ^-$ and $J/ψ(1S) \,π^+π^-$ for the $ψ(2S)$ and $μ^+μ^-$ for the $J/ψ(1S)$. The cross-section ratio $σ_{ψ(2S)}/σ_{J/ψ(1S)}$ has been measured as a function of $Q^2, W$ and $t$. The results are compared to predictions of QCD-inspired models of exclusive vector-meson production.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measurement of the cross-section ratio sigma_{psi(2S)}/sigma_{J/psi(1S)} in deep inelastic exclusive ep scattering at HERA

The exclusive deep inelastic electroproduction of $ψ(2S)$ and $J/ψ(1S)$ at an $ep$ centre-of-mass energy of 317 GeV has been studied with the ZEUS detector at HERA in the kinematic range $2 < Q^2 < 80$ GeV$^2$, $30 < W < 210$ GeV and $|t| < 1$ GeV$^2$, where $Q^2$ is the photon virtuality, $W$ is the photon-proton centre-of-mass energy and $t$ is the squared four-momentum transfer at the proton vertex. The data for $2 < Q^2 < 5$ GeV$^2$ were taken in the HERA I running period and correspond to an integrated luminosity of 114 pb$^{-1}$. The data for $5 < Q^2 < 80$ GeV$^2$ are from both HERA I and HERA II periods and correspond to an integrated luminosity of 468 pb$^{-1}$. The decay modes analysed were $μ^+μ^-$ and $J/ψ(1S) π^+π^-$ for the $ψ(2S)$ and $μ^+μ^-$ for the $J/ψ(1S)$. The cross-section ratio $σ_{ψ(2S)}/σ_{J/ψ(1S)}$ has been measured as a function of $Q^2, W$ and $t$. The results are compared to predictions of QCD-inspired models of exclusive vector-meson production.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Search for a narrow baryonic state decaying to ${pK^0_S}$ and ${\bar{p}K^0_S}$ in deep inelastic scattering at HERA

A search for a narrow baryonic state in the $pK^0_S$ and $\bar{p}K^0_S$ system has been performed in $ep$ collisions at HERA with the ZEUS detector using an integrated luminosity of 358 pb$^{-1}$ taken in 2003-2007. The search was performed with deep inelastic scattering events at an $ep$ centre-of-mass energy of 318 GeV for exchanged photon virtuality, $Q^2$, between 20 and 100 $\rm{} GeV^{2}$. Contrary to evidence presented for such a state around 1.52 GeV in a previous ZEUS analysis using a sample of 121 pb$^{-1}$ taken in 1996-2000, no resonance peak was found in the $p(\bar{p})K^0_S$ invariant-mass distribution in the range 1.45-1.7 GeV. Upper limits on the production cross section are set.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Study of the breakdown voltage of SiPMs

The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15$\times $15, 25$\times $25, 50$\times $50, and 100$\times $100 $μ$m$^2$, manufactured by KETEK, has been investigated. From the current-voltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, $V_I$, and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, $V_G$, have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, $V_{PD}$, has been determined. Within experimental uncertainties, $V_I$ and $V_{PD}$ are equal and independent of pixel size. For $V_G$, a dependence on pixel size is observed. The difference $V_I - V_G$ is about 1 V for the SiPM with 15 $μ$m pixels, decreases with pixel size and is compatible with zero for the SiPM with 100 $μ$m pixels.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The influence of edge effects on the determination of the doping profile of silicon pad diodes

Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is shown that the doping concentration derived from the capacitance-voltage measurements with and without edge corrections differ significantly. After the edge correction, the bulk doping of the pad diodes is found to be uniform within +/- 1.5%. The voltage dependence of the edge capacitance is compared to the predictions of two simple models.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of the rare $B^0_s\toμ^+μ^-$ decay from the combined analysis of CMS and LHCb data

A joint measurement is presented of the branching fractions $B^0_s\toμ^+μ^-$ and $B^0\toμ^+μ^-$ in proton-proton collisions at the LHC by the CMS and LHCb experiments. The data samples were collected in 2011 at a centre-of-mass energy of 7 TeV, and in 2012 at 8 TeV. The combined analysis produces the first observation of the $B^0_s\toμ^+μ^-$ decay, with a statistical significance exceeding six standard deviations, and the best measurement of its branching fraction so far. Furthermore, evidence for the $B^0\toμ^+μ^-$ decay is obtained with a statistical significance of three standard deviations. The branching fraction measurements are statistically compatible with SM predictions and impose stringent constraints on several theories beyond the SM.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Precision measurement of the carrier drift velocities in <100> silicon

Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with <100> crystal orientation are presented. The measurements cover electric field values between 2.4 and 50 kV/cm and temperatures between 233 and 333 K. Two methods have been used for extracting the drift velocities from current transient measurements: A time-of-flight (tof) method and fits of simulated transients to the measured transients, with the parameters describing the field and temperature dependence of the electron and hole mobilities as free parameters. A new mobility parametrization, which also provides a better description of existing data than previous ones, allowed an extension of the classical tof method to the situation of non-uniform fields. For the fit method, the use of the convolution theorem of Fourier transforms enabled us to precisely determine the electronics transfer function of the complete set-up, including the sensor properties. The agreement between the tof and the fit method is about 1 %, which corresponds to a time-of-flight uncertainty of 30 ps for a pad diode of 200 μm thickness at the highest voltages. Combining our results with published data of low-field mobilities, we derive parameterizations of the drift velocities in high-ohmic <100> silicon for electrons and holes for fields between 0 and 50 kV/cm and temperatures between 233 and 333 K.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Production of exclusive dijets in diffractive deep inelastic scattering at HERA

Production of exclusive dijets in diffractive deep inelastic $e^\pm p$ scattering has been measured with the ZEUS detector at HERA using an integrated luminosity of 372 pb$^{-1}$. The measurement was performed for $γ^*-p$ centre-of-mass energies in the range $90 < W < 250$ GeV and for photon virtualities $Q^2 > 25$ GeV$^2$. Energy and transverse-energy flows around the jet axis are presented. The cross section is presented as a function of $β$ and $ϕ$, where $β=x/x_{\rm I\!P}$, $x$ is the Bjorken variable and $x_{\rm I\!P}$ is the proton fractional longitudinal momentum loss. The angle $ϕ$ is defined by the $γ^*-$dijet plane and the $γ^*-e^\pm$ plane in the rest frame of the diffractive final state. The $ϕ$ cross section is measured in bins of $β$. The results are compared to predictions from models based on different assumptions about the nature of the diffractive exchange.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Deep inelastic cross-section measurements at large y with the ZEUS detector at HERA

The reduced cross sections for $e^{+}p$ deep inelastic scattering have been measured with the ZEUS detector at HERA at three different centre-of-mass energies, $318$, $251$ and $225$ GeV. The cross sections, measured double differentially in Bjorken $x$ and the virtuality, $Q^2$, were obtained in the region $0.13\ \leq\ y\ \leq\ 0.75$, where $y$ denotes the inelasticity and $5\ \leq\ Q^2\ \leq\ 110$ GeV$^2$. The proton structure functions $F_2$ and $F_L$ were extracted from the measured cross sections.

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preprint2014arXiv

Further studies of the photoproduction of isolated photons with a jet at HERA

In this extended analysis using the ZEUS detector at HERA, the photoproduction of isolated photons together with a jet is measured for different ranges of the fractional photon energy, $x_γ^{\mathrm{meas}}$, contributing to the photon-jet final state. Cross sections are evaluated in the photon transverse-energy and pseudorapidity ranges $6 < E_T^γ < 15$ GeV and $-0.7 < η^γ < 0.9$, and for jet transverse-energy and pseudorapidity ranges $4 < E_T^{\rm jet} < 35$ GeV and $-1.5 < η^{\rm jet} < 1.8$, for an integrated luminosity of 374 $\mathrm{pb}^{-1}$. The kinematic observables studied comprise the transverse energy and pseudorapidity of the photon and the jet, the azimuthal difference between them, the fraction of proton energy taking part in the interaction, and the difference between the pseudorapidities of the photon and the jet. Higher-order theoretical calculations are compared to the results.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Measurement of beauty and charm production in deep inelastic scattering at HERA and measurement of the beauty-quark mass

The production of beauty and charm quarks in ep interactions has been studied with the ZEUS detector at HERA for exchanged four-momentum squared 5 < Q^2 < 1000 GeV^2 using an integrated luminosity of 354 pb^{-1}. The beauty and charm content in events with at least one jet have been extracted using the invariant mass of charged tracks associated with secondary vertices and the decay-length significance of these vertices. Differential cross sections as a function of Q^2, Bjorken x, jet transverse energy and pseudorapidity were measured and compared with next-to-leading-order QCD calculations. The beauty and charm contributions to the proton structure functions were extracted from the double-differential cross section as a function of x and Q^2. The running beauty-quark mass, m_b at the scale m_b, was determined from a QCD fit at next-to-leading order to HERA data for the first time and found to be 4.07 \pm 0.14 (fit} ^{+0.01}_{-0.07} (mod.) ^{+0.05}_{-0.00} (param.) ^{+0.08}_{-0.05} (theo) GeV.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Measurement of D* photoproduction at three different centre-of-mass energies at HERA

The photoproduction of $D^{*\pm}$ mesons has been measured with the ZEUS detector at HERA at three different ep centre-of-mass energies, $\sqrt{s}$, of 318, 251 and 225 GeV. For each data set, $D^*$ mesons were required to have transverse momentum, $p_T^{D^*}$, and pseudorapidity, $η^{D^*}$, in the ranges $1.9 < p_T^{D^*} < 20$ GeV and $|η^{D^*}|<1.6$. The events were required to have a virtuality of the incoming photon, $Q^2$, of less than 1 GeV$^2$. The dependence on $\sqrt{s}$ was studied by normalising to the high-statistics measurement at $\sqrt{s} =318$ GeV. This led to the cancellation of a number of systematic effects both in data and theory. Predictions from next-to-leading-order QCD describe the $\sqrt{s}$ dependence of the data well.

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preprint2014arXiv

Measurement of high-Q2 neutral current deep inelastic e+p scattering cross sections with a longitudinally polarised positron beam at HERA

Measurements of neutral current cross sections for deep inelastic scattering in e+p collisions at HERA with a longitudinally polarised positron beam are presented. The single-differential cross-sections d(sigma)/dQ2, d(sigma)/dx and d(sigma)/dy and the reduced cross-section were measured in the kinematic region Q2 > 185 GeV2 and y < 0.9, where Q2 is the four-momentum transfer squared, x the Bjorken scaling variable, and y the inelasticity of the interaction. The measurements were performed separately for positively and negatively polarised positron beams. The measurements are based on an integrated luminosity of 135.5 pb-1 collected with the ZEUS detector in 2006 and 2007 at a centre-of-mass energy of 318 GeV. The structure functions F3 and F3(gamma)Z were determined by combining the e+p results presented in this paper with previously published e-p neutral current results. The asymmetry parameter A+ is used to demonstrate the parity violation predicted in electroweak interactions. The measurements are well described by the predictions of the Standard Model.

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preprint2014arXiv

Measurement of neutral current e+/-p cross sections at high Bjorken x with the ZEUS detector

The neutral current e+/-p cross section has been measured up to values of Bjorken x of approximately 1 with the ZEUS detector at HERA using an integrated luminosity of 187 inv. pb of e-p and 142 inv. pb of e+p collisions at sqrt(s) = 318GeV. Differential cross sections in x and Q2, the exchanged boson virtuality, are presented for Q2 geq 725GeV2. An improved reconstruction method and greatly increased amount of data allows a finer binning in the high-x region of the neutral current cross section and leads to a measurement with much improved precision compared to a similar earlier analysis. The measurements are compared to Standard Model expectations based on a variety of recent parton distribution functions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Challenges for the Adaptive Gain Integrating Pixel Detector (AGIPD) design due to the high intensity photon radiation environment at the European XFEL

The European X-ray Free Electron Laser (XFEL) is a new research facility currently under construction in Hamburg, Germany. With a pulse length of less than 100 fs and an extremely high luminosity of 27000 flashes per second the European XFEL will have a unique time structure that demands the development of new detectors tailored to the requirements imposed by the experiments while complying with the machine specific operation parameters. The Adaptive Gain Integrating Pixel Detector (AGIPD) is one response to the need for large 2D detectors, able to cope with the 4.5 MHz frame rate, as well as with the high dynamic range needed by XFEL experiments ranging from single photons to more than 10$^4$ 12 keV photons per pixel per pulse. In addition it has to withstand doses of up to 1 GGy over three years.

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preprint2012arXiv

Design of the AGIPD Sensor for the European XFEL

For experiments at the European X-Ray Free-Electron Laser (XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements for the detector are a high dynamic range of 0, 1 - to more than 10E4 12.4 keV photons per pixel within an XFEL pulse duration of < 100 fs, and a radiation tolerance of doses up to 1 GGy for 3 years of operation. The detector will have 1024 x 1024 p+ pixels with a pixel size of 200 um x 200 um and will be manufactured on 500 um thick n-type silicon. The design value for the operating voltage is 500 V, however, for special applications an operation up to ~ 1000 V should be possible. Experimental data on the dose dependence of the surface density of oxide charges at the Si-SiO2 interface and the surface-current density have been implemented in the SYNOPSYS TCAD simulation program in order to optimize the design of the pixel and guard-ring layout. The methodology of the sensor design, the optimization of the most relevant parameters and the layout are demonstrated. Finally the simulated performance, in particular the breakdown voltage, dark current and inter-pixel capacitance as function of the X-ray dose will be presented.

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preprint2012arXiv

Inclusive-jet photoproduction at HERA and determination of alphas

Inclusive-jet cross sections have been measured in the reaction ep->e+jet+X for photon virtuality Q2 < 1 GeV2 and gamma-p centre-of-mass energies in the region 142 < W(gamma-p) < 293 GeV with the ZEUS detector at HERA using an integrated luminosity of 300 pb-1. Jets were identified using the kT, anti-kT or SIScone jet algorithms in the laboratory frame. Single-differential cross sections are presented as functions of the jet transverse energy, ETjet, and pseudorapidity, etajet, for jets with ETjet > 17 GeV and -1 < etajet < 2.5. In addition, measurements of double-differential inclusive-jet cross sections are presented as functions of ETjet in different regions of etajet. Next-to-leading-order QCD calculations give a good description of the measurements, except for jets with low ETjet and high etajet. The influence of non-perturbative effects not related to hadronisation was studied. Measurements of the ratios of cross sections using different jet algorithms are also presented; the measured ratios are well described by calculations including up to O(alphas2) terms. Values of alphas(Mz) were extracted from the measurements and the energy-scale dependence of the coupling was determined. The value of alphas(Mz) extracted from the measurements based on the kT jet algorithm is alphas(Mz) = 0.1206 +0.0023 -0.0022 (exp.) +0.0042 -0.0035 (th.); the results from the anti-kT and SIScone algorithms are compatible with this value and have a similar precision.

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preprint2012arXiv

Measurement of the t dependence in exclusive photoproduction of Upsilon(1S) mesons at HERA

The exclusive photoproduction reaction gamma p -> Upsilon(1S) p has been studied with the ZEUS detector in ep collisions at HERA using an integrated luminosity of 468 pb^-1. The measurement covers the kinematic range 60<W<220 GeV and Q^2<1 GeV^2, where W is the photon-proton centre-of-mass energy and Q^2 is the photon virtuality. The exponential slope, b, of the t dependence of the cross section, where t is the squared four-momentum transfer at the proton vertex, has been measured, yielding b = 4.3 +2.0 -1.3 (stat.) +0.5 -0.6 (syst.) GeV^-2. This constitutes the first measurement of the t dependence of the gamma p -> Upsilon(1S) p cross section.

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preprint2012arXiv

Production of Z0 bosons in elastic and quasi-elastic ep collisions at HERA

The production of Z0 bosons in the reaction ep -> eZ0p*, where p* stands for a proton or a low-mass nucleon resonance, has been studied in ep collisions at HERA using the ZEUS detector. The analysis is based on a data sample collected between 1996 and 2007, amounting to 496 pb-1 of integrated luminosity. The Z0 was measured in the hadronic decay mode. The elasticity of the events was ensured by a cut on eta_max < 3.0, where eta_max is the maximum pseudorapidity of energy deposits in the calorimeter defined with respect to the proton beam direction. A signal was observed at the Z0 mass. The cross section of the reaction ep -> eZ0p* was measured to be sigma(ep -> eZ0p*) = 0.13 +/- 0.06 (stat.) +/- 0.01 (syst.) pb, in agreement with the Standard Model prediction of 0.16 pb. This is the first measurement of Z0 production in ep collisions.

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preprint2012arXiv

Scaled momentum distributions for K0s and Lambda/bar Lambda in DIS at HERA

Scaled momentum distributions for the strange hadrons K0s and Lambda/bar Lambda were measured in deep inelastic ep scattering with the ZEUS detector at HERA using an integrated luminosity of 330 pb-1. The evolution of these distributions with the photon virtuality, Q2, was studied in the kinematic region 10<Q2<40000 GeV2 and 0.001<x<0.75, where x is the Bjorken scaling variable. Clear scaling violations are observed. Predictions based on different approaches to fragmentation were compared to the measurements. Leading-logarithm parton-shower Monte Carlo calculations interfaced to the Lund string fragmentation model describe the data reasonably well in the whole range measured. Next-to-leading-order QCD calculations based on fragmentation functions, FFs, extracted from e+e- data alone, fail to describe the measurements. The calculations based on FFs extracted from a global analysis including e+e-, ep and pp data give an improved description. The measurements presented in this paper have the potential to further constrain the FFs of quarks, anti-quarks and gluons yielding K0s and Lambda/bar Lambda strange hadrons.

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preprint2012arXiv

Search for single-top production in ep collisions at HERA

A search for single-top production, $ep \rightarrow etX$, has been performed with the ZEUS detector at HERA using data corresponding to an integrated luminosity of $0.37\fbi$. No evidence for top production was found, consistent with the expectation from the Standard Model. Limits were computed for single-top production via flavour changing neutral current transitions. The result was combined with a previous ZEUS result yielding a total luminosity of 0.50fb-1. A 95% credibility level upper limit of 0.13 pb was obtained for the cross section at the centre-of-mass energy of $\sqrt{s}=315\gev$.

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preprint2011arXiv

Exclusive electroproduction of two pions at HERA

The exclusive electroproduction of two pions in the mass range 0.4 < Mππ < 2.5 GeV has been studied with the ZEUS detector at HERA using an integrated luminosity of 82 pb-1. The analysis was carried out in the kinematic range of 2 < Q2 < 80 GeV2, 32 < W < 180 GeV and |t| < 0.6 GeV2, where Q2 is the photon virtuality, W is the photon-proton centre-of-mass energy and t is the squared four-momentum transfer at the proton vertex. The two-pion invariant-mass distribution is interpreted in terms of the pion electromagnetic form factor, |F(Mππ)|, assuming that the studied mass range includes the contributions of the ρ, ρ' and ρ" vector-meson states. The masses and widths of the resonances were obtained and the Q2 dependence of the cross-section ratios σ(ρ' \rightarrow ππ)/σ(ρ) and σ(ρ" \rightarrow ππ)/σ(ρ) was extracted. The pion form factor obtained in the present analysis is compared to that obtained in e+e- \rightarrow π+π-.

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preprint2011arXiv

Measurement of beauty production in deep inelastic scattering at HERA using decays into electrons

The production of beauty quarks in ep interactions has been studied with the ZEUS detector at HERA for exchanged four-momentum squared Q^2 > 10 GeV^2, using an integrated luminosity of 363 pb^{-1}. The beauty events were identified using electrons from semileptonic b decays with a transverse momentum 0.9 < p_T^e < 8 GeV and pseudorapidity |eta^e| < 1.5. Cross sections for beauty production were measured and compared with next-to-leading-order QCD calculations. The beauty contribution to the proton structure function F_2 was extracted from the double-differential cross section as a function of Bjorken-x and Q^2.

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preprint2011arXiv

Measurement of heavy-quark jet photoproduction at HERA

Photoproduction of beauty and charm quarks in events with at least two jets has been measured with the ZEUS detector at HERA using an integrated luminosity of 133 $pb^{-1}$. The fractions of jets containing b and c quarks were extracted using the invariant mass of charged tracks associated with secondary vertices and the decay-length significance of these vertices. Differential cross sections as a function of jet transverse momentum, $p_{T}^{\text{jet}}$, and pseudorapidity, $η^{\text{jet}}$, were measured. The data are compared with previous measurements and are well described by next-to-leading-order QCD predictions.

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preprint2011arXiv

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the study of ultra-fast processes. One of the detector systems under development for the XFEL is the Adaptive Gain Integrating Pixel Detector (AGIPD), which consists of a pixel array with readout ASICs bump-bonded to a silicon sensor with pixels of 200 μm \times 200 μm. The particular requirements for the detector are a high dynamic range (0, 1 up to 10E5 12 keV photons/XFEL-pulse), a fast read-out and radiation tolerance up to doses of 1 GGy of 12 keV X-rays for 3 years of operation. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the SiO2 layer and interface traps at the Si-SiO2 interface will build up. As function of the 12 keV X-ray dose the microscopic defects in test structures and the macro- scopic electrical properties of segmented sensors have been investigated. From the test structures the oxide charge density, the density of interface traps and their properties as function of dose have been determined. It is found that both saturate (and even decrease) for doses above a few MGy. For segmented sensors surface damage introduced by the X-rays increases the full depletion voltage, the surface leakage current and the inter-pixel capacitance. In addition an electron accumulation layer forms at the Si-SiO2 interface which increases with dose and decreases with applied voltage. Using TCAD simulations with the dose dependent damage parameters obtained from the test struc- tures the results of the measurements can be reproduced. This allows the optimization of the sensor design for the XFEL requirements.

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preprint2010arXiv

Measurement of beauty production in DIS and F_2^bbbar extraction at ZEUS

Beauty production in deep inelastic scattering with events in which a muon and a jet are observed in the final state has been measured with the ZEUS detector at HERA using an integrated luminosity of 114 pb^-1. The fraction of events with beauty quarks in the data was determined using the distribution of the transverse momentum of the muon relative to the jet. The cross section for beauty production was measured in the kinematic range of photon virtuality, Q^2 > 2 Gev^2, and inelasticity, 0.05 < y < 0.7, with the requirement of a muon and a jet. Total and differential cross sections are presented and compared to QCD predictions. The beauty contribution to the structure function F_2 was extracted and is compared to theoretical predictions.

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preprint2007arXiv

The design and performance of the ZEUS Micro Vertex detector

In order to extend the tracking acceptance, to improve the primary and secondary vertex reconstruction and thus enhancing the tagging capabilities for short lived particles, the ZEUS experiment at the HERA Collider at DESY installed a silicon strip vertex detector. The barrel part of the detector is a 63 cm long cylinder with silicon sensors arranged around an elliptical beampipe. The forward part consists of four circular shaped disks. In total just over 200k channels are read out using $2.9 {\rm m^2}$ of silicon. In this report a detailed overview of the design and construction of the detector is given and the performance of the completed system is reviewed.

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