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Source author record

J. L. Cheng

J. L. Cheng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-matphysics.optics

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Published work

10 published item(s)

preprint2019arXiv

Third harmonic generation of undoped graphene in Hartree-Fock approximation

We theoretically investigate the effects of Coulomb interaction, at the level of unscreened Hartree-Fock approximation, on third harmonic generation of undoped graphene in an equation of motion framework. The unperturbed electronic states are described by a widely used two-band tight binding model, and the Coulomb interaction is described by the Ohno potential. The ground state is renormalized by taking into account the Hartree-Fock term, and the optical conductivities are obtained by numerically solving the equations of motion. The absolute values of conductivity for third harmonic generation depend on the photon frequency $Ω$ as $Ω^{-n}$ for $\hbarΩ<1$, and then show a peak as $3\hbarΩ$ approaches the renormalized energy of the $M$ point. Taking into account the Coulomb interaction, $n$ is found to be $5.5$, which is significantly greater than the value of $4$ found with the neglect of the Coulomb interaction. Therefore the Coulomb interaction enhances third harmonic generation at low photon energies -- for our parameters $\hbarΩ<0.8$~eV -- and then reduces it until the photon energy reaches about $2.1$~eV. The effect of the background dielectric constant is also considered.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Numerical study of the optical nonlinearity of doped and gapped graphene: From weak to strong field excitation

Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser pulse. We discuss in detail the dependence of second harmonic generation, third harmonic generation, and the Kerr effects on the doping level, the gap, and the electric field amplitude. The numerical results for weak electric fields agree with those calculated from available analytic perturbation formulas. For strong electric fields when saturation effects are important, all the effective third order nonlinear response coefficients show a strong field dependence.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Disorder-induced significant enhancement in magnetization of ball-milled Fe2CrGa alloy

A new disordered atom configuration in Fe2CrGa alloy has been created by ball-milling method. This leads to a significant enhancement of the magnetic moment up to 3.2~3.9 μB and an increase of Curie temperature by about 200 K, compared with the arc-melt samples. Combination of first-principles calculations and experimental results reveals that Fe2CrGa alloy should crystallize in Hg2CuTi based structure with different atomic disorders for the samples prepared by different methods. It is addressed that magnetic interactions play a crucial role for the system to adopt such an atomic configuration which disobeys the empirical rule.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-dependent inter- and intra-valley electron-phonon scattering in germanium

We investigate the spin-dependent electron-phonon scatterings of the $L$ and $Γ$ valleys and the band structure near the conduction band minima in germanium. We first construct a $16\times16$ ${\bm k}\cdot{\bm p}$ Hamiltonian in the vicinity of the $L$ point in germanium, which ensures the correctness of the band structure of the lowest three conduction bands and highest two valence bands. This Hamiltonian facilitates the analysis of the spin-related properties of the conduction electrons. We then demonstrate the phonon-induced electron scatterings of the $L$ and $Γ$ valleys, i.e., the intra-$Γ$/ $L$ valley, inter--$Γ$-$L$ valley and inter--$L$-$L$ valley scatterings in germanium. The selection rules and complete scattering matrices for these scatterings are calculated, where the scattering matrices for the intra-$Γ$ valley scattering, inter--$Γ$-$L$ valley scattering and the optical-phonon and the separated transverse-acoustic- and longitudinal-acoustic-phonon contributions to the intra-$Γ$ valley scattering have not been reported in the literature. The coefficients in these scattering matrices are obtained via the pseudo-potential calculation, which also verifies our selection rules and wave-vector dependence. We further discuss the Elliott-Yafet mechanisms in these electron-phonon scatterings with the ${\bm k}$$\cdot$${\bm p}$ eigenstates at the $L$ and $Γ$ valleys. Our investigation of these electron-phonon scatterings are essential for the study of the optical orientation of spin and hot-electron relaxation in germanium.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Full Band Structure Calculation of Two-photon Indirect Absorption in Bulk Silicon

Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.

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preprint2011arXiv

Theory of optical spin orientation in silicon

We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the selection rules, the contribution to the carrier and spin injection in each conduction band valley from each phonon branch and each valence band, and the temperature dependence of these processes. The transition from the heavy hole band to the lowest conduction band dominates the injection due to the large joint density of states. For incident light propagating along the $[00\bar{1}]$ direction, the injection rates and the degree of spin polarization of injected electrons show strong valley anisotropy. The maximum degree of spin polarization is at the injection edge with values 25% at low temperature and 15% at high temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Two-photon Indirect Optical Injection and Two-color Coherent Control in Bulk Silicon

Using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states in bulk silicon, we theoretically investigate two-photon indirect optical injection of carriers and spins and two-color coherent control of the motion of the injected carriers and spins. For two-photon indirect carrier and spin injection, we identify the selection rules of band edge transitions, the injection in each conduction band valley, and the injection from each phonon branch at 4 K and 300 K. At 4 K, the TA phonon-assisted transitions dominate the injection at low photon energies, and the TO phonon-assisted at high photon energies. At 300 K, the former dominates at all photon energies of interest. The carrier injection shows anisotropy and linear-circular dichroism with respect to light propagation direction. For light propagating along the $<001>$ direction, the carrier injection exhibits valley anisotropy, and the injection into the $Z$ conduction band valley is larger than that into the $X/Y$ valleys. For $σ^-$ light propagating along the $<001>$ ($<111>$) direction, the degree of spin polarization gives a maximum value about 20% (6%) at 4 K and -10% (20%) at 300 K, and at both temperature shows abundant structure near the injection edges due to contributions from different phonon branches. Forthe two-color coherent current injection with an incident optical field composed of a fundamental frequency and its second harmonic, the response tensors of the electron (hole) charge and spin currents are calculated at 4 K and 300 K. We show the current control for three different polarization scenarios. The spectral dependence of the maximum swarm velocity shows that the direction of charge current reverses under increase in photon energy.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Theory of the spin relaxation of conduction electrons in silicon

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation rates for hot electrons are predicted.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Intense terahertz laser fields on a two-dimensional electron gas with Rashba spin-orbit coupling

The spin-dependent density of states and the density of spin polarization of an InAs-based two-dimensional electron gas with the Rashba spin-orbit coupling under an intense terahertz laser field are investigated by utilizing the Floquet states to solve the time-dependent Schrödinger equation. It is found that both densities are strongly affected by the terahertz laser field. Especially a terahertz magnetic moment perpendicular to the external terahertz laser field in the electron gas is induced. This effect can be used to convert terahertz electric signals into terahertz magnetic ones efficiently.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Spin relaxations in semiconductor quantum dots

The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field, the quantum dot size, the temperature as well as the electric field on the spin relaxation time are investigated in detail. Moreover, we show that the perturbation method widely used in the literature is inadequate in accounting for the electron structure and therefore the spin relaxation time.

0 citations0 reviewsNo code linkedOpen access