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Researcher profile

M. W. Wu

M. W. Wu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gascond-mat.str-elcond-mat.supr-concond-matcond-mat.other

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Published work

54 published item(s)

preprint2020arXiv

Theory of Higgs Modes in $d$-Wave Superconductors

By applying a microscopic gauge-invariant kinetic theory in $d$-wave superconductors, we analytically derive the energy spectra of the breathing Higgs mode and, in particular, rotating Higgs mode that is unique for the $d$-wave order parameter. Analytical investigation on their dynamic properties is also revealed. We show that the breathing Higgs mode is optically visible in the second-order regime. Whereas the rotating Higgs mode is optically inactive, we show that this mode can be detected in the pseudogap phase by magnetic resonance experiment. It is interesting to find that with a longitudinal temperature gradient, the charge-neutral rotating Higgs mode generates a thermal Hall current by magnetic field in the pseudogap phase, providing a unique scheme for its detection.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron spin diffusion in monolayer MoS$_2$

Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this material, has a marked effect on the in-plane spin diffusion due to the anisotropic spin precession frequency in the spatial domain. With the electron-impurity and inter-valley electron-phonon scatterings separately included in the scattering term, we study the intra- and inter-valley diffusion processes of the in-plane spins by analytically solving the kinetic spin Bloch equations. The intra-valley process is found to be dominant in the in-plane spin diffusion, in contrast to the case of spin relaxation in time domain, where the inter-valley process can be comparable to or even more important than the intra-valley one. For the intra-valley process, we find that the in-plane spin diffusion is suppressed with the increase of impurity density but effectively enhanced by increasing electron density in both the degenerate and nondegenerate limits. We also take into account the electron-electron Coulomb scattering in the intra-valley process. Interestingly, we find that in the nondegenerate limit, the intra-valley spin diffusion length presents an opposite trend in the electron density dependence compared to the one with only electron-impurity scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Majorana fermions in semiconductor nanostructures with two wires connected through ring

We investigate the Majorana fermions in a semiconductor nanostructure with two wires connected through a ring. The nanostructure is mirror symmetric and in the proximity of a superconductor. The Rashba spin-orbit coupling and a magnetic field parallel to the wires or perpendicular to the ring are included. Moreover, a magnetic flux is applied through the center of the ring, which makes the phase difference of the superconducting order parameters in the two wires being zero or $π$ due to the fluxoid quantization and the thermodynamic equilibrium of the supercurrent in the superconducting ring. If the phase difference is $π$, two Majorana modes are shown to appear around the ring without interacting with each other. On contrast, if the phase difference is zero, these Majorana modes disappear and the states localized around the ring have finite energies. These states can be detected via the conductance measurement by connecting two normal leads to the wires and a third one directly to the ring. It is shown in the bias dependence of the differential conductance from one of the leads connected to the wire to the one connected directly to the ring that the tunnelings through the Majorana modes (i.e., in the case with $π$ phase difference) leads to two peaks very close to the zero bias, while the tunneling through the states with finite energies (i.e., in the case with zero phase difference) leads to peaks far away from the zero bias if the ring radius is small. This difference for the cases with and without the Majorana modes in small ring radius is distinct and hence can be used to identify the Majorana modes....

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preprint2014arXiv

Theory optical excitation spectra and depolarization dynamics in bilayer WS$_2$ from viewpoint of excimers

We investigate the optical excitation spectra and the photoluminescence depolarization dynamics in bilayer WS$_2$. A different understanding of the optical excitation spectra in the recent photoluminescence experimentby Zhu {\em et al.} [arXiv:1403.6224] in bilayer WS$_2$ is proposed. In the experiment, four excitations (1.68, 1.93, 1.99 and 2.37 eV) are observed and identified to be indirect exciton for the $Γ$ valley, trion, A exciton and B exciton excitations, respectively, with the redshift for the A exciton energy measured to be 30$\sim$50 meV when the sample synthesized from monolayer to bilayer. According to our study, by considering there exist both the intra-layer and charge-transfer excitons in the bilayer WS$_2$, with inter-layer hopping of the hole, there exists excimer state composed by the superposition of the intra-layer and charge-transfer exciton states. Accordingly, we show that the four optical excitations in the bilayer WS$_2$ are the A charge-transfer exciton, ${\rm A}'$ excimer, ${\rm B}'$ excimer and B intra-layer exciton states, respectively, with the calculated resonance energies showing good agreement with the experiment. In our picture, the speculated indirect exciton, which involves a high-order phonon absorption/emission process, is not necessary. Furthermore, the binding energy for the excimer state is calculated to be 40 meV, providing reasonable explanation for the experimentally observed energy redshift of the A exciton. Based on the excimer states, we further derive the exchange interaction Hamiltonian. Then the photoluminescence depolarization dynamics due to the electron-hole exchange interaction is studied in the pump-probe setup by the kinetic spin Bloch equations. We find that ......

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preprint2014arXiv

Valley depolarization due to inter- and intra-valley electron-hole exchange interactions in monolayer MoS$_{2}$

We investigate the valley depolarization due to the electron-hole exchange interaction in monolayer MoS$_{2}$. Both the long- and short-range parts of the intra- and inter-valley electron-hole exchange interactions are calculated. We find that both the long- and short-range exchange interactions can cause the inter- and intra-valley bright exciton transitions. With the intra-valley bright exciton transition channel nearly forbidden due to the large splitting of the valence bands, the inter-valley channel due to the exchange interaction can cause the valley depolarization efficiently by the Maialle-Silva-Sham mechanism [Phys. Rev. B {\bf 47}, 15776 (1993)]. With only the long-range exchange interaction, the calculations show good agreement with the recent valley polarization experiments, including the time-resolved valley polarization measurement, the pump-probe experiment and the steady-state PL polarization measurement. We further show that for the A-exciton with large (small) center-of-mass momentum, the long-range exchange interaction can cause the {\em fast} ({\em slow}) inter-valley exciton transition.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ambipolar spin transport in (111) GaAs quantum wells

We present a microscopic theory for transport of the spin polarized charge density wave with both electrons and holes in the $(111)$ GaAs quantum wells. We analytically show that, contradicting to the commonly accepted belief, the spin and charge motions are bound together only in the fully polarized system but can be separated in the case of low spin polarization or short spin lifetime even when the spatial profiles of spin density wave and charge density wave overlap with each other. We further show that, the Coulomb drag between electrons and holes can markedly enhance the hole spin diffusion if the hole spin motion can be separated from the charge motion. In the high spin polarized system, the Coulomb drag can boost the hole spin diffusion coefficient by more than one order of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anomalous D'yakonov-Perel' spin relaxation in InAs (110) quantum wells under strong magnetic field: role of Hartree-Fock self-energy

We investigate the influence of the Hartree-Fock self-energy, acting as an effective magnetic field, on the anomalous D'yakonov-Perel' spin relaxation in InAs (110) quantum wells when the magnetic field in the Voigt configuration is much stronger than the spin-orbit-coupled field. The transverse and longitudinal spin relaxations are discussed both analytically and numerically. For the transverse configuration, it is found that the spin relaxation is very sensitive to the Hartree-Fock effective magnetic field, which is very different from the conventional D'yakonov-Perel' spin relaxation. Even an extremely small spin polarization ($P=0.1\%$) can significantly influence the behavior of the spin relaxation. It is further revealed that this comes from the {\em unique} form of the effective inhomogeneous broadening, originated from the mutually perpendicular spin-orbit-coupled field and strong magnetic field. It is shown that this effective inhomogeneous broadening is very small and hence very sensitive to the Hartree-Fock field. Moreover, we further find that in the spin polarization dependence, the transverse spin relaxation time decreases with the increase of the spin polarization in the intermediate spin polarization regime, which is also very different from the conventional situation, where the spin relaxation is always suppressed by the Hartree-Fock field. It is revealed that this {\em opposite} trends come from the additional spin relaxation channel induced by the HF field. For the longitudinal configuration, we find that the spin relaxation can be either suppressed or enhanced by the Hartree-Fock field if the spin polarization is parallel or antiparallel to the magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anomalous D'yakonov-Perel' spin relaxation in semiconductor quantum wells under strong magnetic field in Voigt configuration

We report an anomalous scaling of the D'yakonov-Perel' spin relaxation with the momentum relaxation in semiconductor quantum wells under a strong magnetic field in the Voigt configuration. We focus on the case that the external magnetic field is perpendicular to the spin-orbit-coupling--induced effective magnetic field and its magnitude is much larger than the later one. It is found that the longitudinal spin relaxation time is proportional to the momentum relaxation time even in the strong scattering limit, indicating that the D'yakonov-Perel' spin relaxation shows the Elliott-Yafet-like behaviour. Moreover, the transverse spin relaxation time is inversely proportional (proportional) to the momentum relaxation time in the weak (strong) scattering limit, both in the opposite trends against the well-established conventional D'yakonov-Perel' spin relaxation behaviours. We further demonstrate that all the above anomalous scaling relations come from the unique form of the effective inhomogeneous broadening.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Comment on "Magnetotransport through graphene spin valves" and its following works

We show that the key formula in the works [Ding, Zhu, and Berakdar, Phys. Rev. B {\bf 79}, 045405 (2009); {\bf 84}, 115433 (2011); Ding, Zhu, Zhang, and Berakdar, Phys. Rev. B {\bf 82}, 155143 (2010)] is invalid in the extended graphene system they investigated. The correct formalism in the extended infinite system is also presented in this comment.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayer MoS$_2$: Role of intravalley and intervalley processes

We investigate the in-plane spin relaxation of electrons due to the D'yakonov-Perel' and Elliot-Yafet mechanisms including the intra- and inter-valley processes in monolayer MoS$_2$. We construct the effective Hamiltonian for the conduction band using the Löwdin partition method from the anisotropic two-band Hamiltonian with the intrinsic spin-orbit coupling of the conduction band included. The spin-orbit coupling of the conduction band induces the intra- and inter-valley D'yakonov-Perel' spin relaxation. In addition, the Elliot-Yafet spin relaxation also takes place due to the interband spin mixing. We find that the D'yakonov-Perel' mechanism dominates the in-plane spin relaxation. In the framework of this mechanism, the intravalley process is shown to play a more important role at low temperature whereas the intervalley one becomes more important at high temperature. At the temperature in between, the leading process of the in-plane spin relaxation changes from the intervalley to intravalley one as the electron density increases. Moreover, we find that the intravalley process is dominated by the electron-electron Coulomb scattering even with high impurity density since the dominant term in the spin-orbit coupling is isotropic, which does not lead to the spin relaxation together with the electron-impurity scattering. This is very different from the previous studies in semiconductors and graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron spin relaxation in bilayer graphene

Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the parameters obtained by fitting to the numerical calculation according to the latest report by Konschuh {\it et al.} [Phys. Rev. B {\bf 85}, 115423 (2012)] from first principles. In contrast to single-layer graphene, the leading term of the out-of-plane component of the spin-orbit coupling in bilayer graphene shows a Zeeman-like term with opposite effective magnetic fields in the two valleys. This Zeeman-like term opens a spin relaxation channel in the presence of intervalley scattering. It is shown that the intervalley electron-phonon scattering, which has not been reported in the previous literature, strongly suppresses the in-plane spin relaxation time at high temperature whereas the intervalley short-range scattering plays an important role in the in-plane spin relaxation especially at low temperature. A marked nonmonotonic dependence of the in-plane spin relaxation time on temperature with a minimum of several hundred picoseconds is predicted in the absence of the short-range scatterers. This minimum is comparable to the experimental data. Moreover, a peak in the electron density dependence of the in-plane spin relaxation time at low temperature, which is very different from the one in semiconductors, is predicted. We also find a rapid decrease in the in-plane spin relaxation time with increasing initial spin polarization at low temperature, which is opposite to the situation in both semiconductors and single-layer graphene. ......(The remaining is cut due to the limit of space)

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Energy spectra of three electrons in SiGe/Si/SiGe laterally coupled triple quantum dots

We investigate the energy spectra of three electrons in SiGe/Si/SiGe equilateral triangular and symmetric linear triple quantum dots in the presence of magnetic (in either Faraday or Voigt configuration) and electric fields with single valley approximation by using the real-space configuration interaction method. The strong electron-electron Coulomb interaction, which is crucial to the energy spectra, is explicitly calculated whereas the weak spin-orbit coupling is treated perturbatively. In both equilateral triangular and symmetric linear triple quantum dots, we find doublet-quartet transition of ground-state spin configuration by varying dot size or interdot distance in the absence of external fields. This transition has not been reported in the literature on triple quantum dots. In the magnetic-field (Faraday configuration) dependence of energy spectra, we find anticrossings with large energy splittings between the energy levels with the same spin state in the absence of the spin-orbit coupling. This anticrossing behavior originates from the triple quantum dot confinement potential. In addition, with the inclusion of the spin-orbit coupling, we find that all the intersections shown in the equilateral triangular case become anticrossing whereas only part of the intersections in symmetric linear case show anticrossing behavior in the presence of magnetic field in either the Faraday or Voigt configuration. All the anticrossing behaviors are analyzed based on symmetry consideration. Moreover, we show that the electric field can effectively influence the energy levels and the charge configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hot-carrier transport and spin relaxation on the surface of topological insulator

We study the charge and spin transport under high electric field (up to several kV/cm) on the surface of topological insulator Bi$_2$Se$_3$, where the electron-surface optical phonon scattering dominates except at very low temperature. Due to the spin mixing of conduction and valence bands, the electric field not only accelerates electrons in each band, but also leads to inter-band precession. In the presence of the electric field, electrons can transfer from the valence band to the conduction one via the inter-band precession and inter-band electron-phonon scattering. The electron density in each band varies with the electric field linearly when the electric field is strong. Due to the spin-momentum locking, a transverse spin polarization, with the magnitude proportional to the momentum scattering time, is induced by the electric field. The induced spin polarization depends on the electric field linearly when the latter is small. Moreover, its magnitude is inversely proportional to the temperature and is insensitive to the electron density at high temperature. Our investigation also reveals that due to the large relative static dielectric constant, the Coulomb scattering is too weak to establish a drifted Fermi distribution with a unified hot-electron temperature in the steady state under the electric field. After turning off the electric field in the steady state, the hot carriers cool down in a time scale of energy relaxation which is very long (of the order of 100-1000 ps) while the spin polarization relaxes in a time scale of momentum scattering which is quite short (of the order of 0.01-0.1 ps).

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism in monolayer MoS$_2$

Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism is studied in monolayer Molybdenum Disulphide. An intervalley in-plane spin relaxation channel is revealed due to the opposite effective magnetic fields perpendicular to the monolayer Molybdenum Disulphide plane in the two valleys together with the intervalley electron-phonon scattering. The intervalley electron-phonon scattering is always in the weak scattering limit, which leads to a rapid decrease of the in-plane spin relaxation time with increasing temperature. A decrease of the in-plane spin relaxation time with the increase of the electron density is also shown.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Kinetic theory of surface plasmon polariton in semiconductor nanowires

Based on the semiclassical model Hamiltonian of the surface plasmon polariton and the nonequilibrium Green-function approach, we present a microscopic kinetic theory to study the influence of the electron scattering on the dynamics of the surface plasmon polariton in semiconductor nanowires. The damping of the surface plasmon polariton originates from the resonant absorption by the electrons (Landau damping), and the corresponding damping exhibits size-dependent oscillations and distinct temperature dependence without any scattering. The scattering influences the damping by introducing a broadening and a shifting to the resonance. To demonstrate this, we investigate the damping of the surface plasmon polariton in InAs nanowires in the presence of the electron-impurity, electron-phonon and electron-electron Coulomb scatterings. The main effect of the electron-impurity and electron-phonon scatterings is to introduce a broadening, whereas the electron-electron Coulomb scattering can not only cause a broadening, but also introduce a shifting to the resonance. For InAs nanowires under investigation, the broadening due to the electron-phonon scattering dominates. As a result, the scattering has a pronounced influence on the damping of the surface plasmon polariton: The size-dependent oscillations are smeared out and the temperature dependence is also suppressed in the presence of the scattering. These results demonstrate the the important role of the scattering on the surface plasmon polariton damping in semiconductor nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Majorana fermions in $T$-shaped semiconductor nanostructures

We investigate the Majorana fermions in a $T$-shaped semiconductor nanostructure with the Rashba spin-orbit coupling and a magnetic field in the proximity of an s-wave superconductor. It is found that the properties of the low-energy modes (including the Majorana and near-zero-energy modes) at the ends of this system are similar to those in the Majorana nanowire. However, very distinct from the nanowire, one Majorana mode emerges at the intersection of the $T$-shaped structure when the number of the low-energy modes at each end $N$ is odd, whereas neither Majorana nor near-zero-energy mode appears at the intersection for even $N$. We also discover that the intersection Majorana mode plays an important role in the transport through the above $T$-shaped nanostructure with each end connected with a normal lead. Due to the presence of the intersection mode, the deviation of the zero-bias conductance from the ideal value in the long-arm limit $Ne^2/h$ is more pronounced in the regime of odd $N$ compared to the one of even $N$. Furthermore, when the magnetic field increases from the regime of odd $N$ to the one of even $N+1$, the deviation from the ideal value tends to decrease. This behavior is also very distinct from that in a nanowire, where the deviation always tends to increase with the increase of magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Microscopic theory of ultrafast dynamics of carriers photoexcited by THz and near-infrared linearly-polarized laser pulses in graphene

We investigate the dynamics of photoexcited carriers and nonequilibrium phonons in graphene by solving the microscopic kinetic Bloch equations. The pump and drift effects from the laser field as well as the relevant scatterings (including the Coulomb scattering with dynamic screening) are explicitly included. When the pump-photon energy is high enough, the influence of the drift term is shown to be negligible and the isotropic hot-electron Fermi distribution is established under the scattering during the linearly polarized laser pulse investigated here. However, in the case with low pump-phonon energy, the drift term is important and leads to a net momentum transfer from the electric field to electrons. Due to this net momentum and the dominant Coulomb scattering, a drifted Fermi distribution different from the one established under static electric field is found to be established in several hundred femtoseconds. We also show that the Auger process investigated in the literature involving only the diagonal terms of density matrices is forbidden by the dynamic screening. However, we propose an Auger process involving the interband coherence and show that it contributes to the dynamics of carriers when the pump-photon energy is low. In addition, the anisotropically momentum-resolved hot-phonon temperatures due to the linearly polarized light are also investigated, with the underlying physics revealed.

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preprint2013arXiv

Negative differential transmission in graphene

By using the Kubo linear response theory with the Keldysh Green function approach, we investigate the mechanism leading to the negative differential transmission in system with the equilibrium electron density much smaller than the photon-excited one. It is shown that the negative differential transmission can appear at low probe-photon energy (in the order of the scattering rate) or at high energy (much larger than the scattering rate). For the low probe-photon energy case, the negative differential transmission is found to come from the increase of the intra-band conductivity due to the large variation of electron distribution after the pumping. As for the high probe-photon energy case, the negative differential transmission is shown to tend to appear with the hot-electron temperature being closer to the equilibrium one and the chemical potential higher than the equilibrium one but considerably smaller than half of the probe-photon energy. We also show that this negative differential transmission can come from both the inter- and the intra-band components of the conductivity. Especially, for the inter-band component, its contribution to the negative differential transmission is shown to come from both the Hartree-Fock self-energy and the scattering. Furthermore, the influence of the Coulomb-hole self-energy is also addressed.

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preprint2013arXiv

Spin relaxation in ultracold spin-orbit coupled $^{40}$K gas

We report the anomalous Dyakonov-Perel' spin relaxation in ultracold spin-orbit coupled $^{40}$K gas when the coupling between $|9/2,9/2\ >$ and $|9/2,7/2\ >$ states (atcing as the effective Zeeman magnetic field) is much stronger than the spin-orbit coupled field. Both the transverse and longitudinal spin relaxations are investigated with small and large spin polarizations. It is found that with small spin polarization, the transverse (longitudinal) spin relaxation is divided into four (two) regimes: the normal weak scattering regime, the anomalous Dyakonov-Perel'-like regime, the anomalous Elliott-Yafet-like regime and the normal strong scattering regime (the anomalous Elliott-Yafet-like regime and the normal strong scattering regime), with only the normal weak scattering regime being in the weak scattering limit. This is very different from the conventional situation under the weak magnetic field, which is divided into the weak and strong scattering regimes according to the weak/strong scattering limit. With large spin polarization, we find that the Hartree-Fock self-energy, which acts as an effective magnetic field, can markedly suppress the transverse spin relaxation in both weak and strong scattering limits. Moreover, by noting that as both the momentum relaxation time and the Hartree-Fock effective magnetic field vary with the scattering length in cold atoms, the anomalous Dyakonov-Perel'-like regime is suppressed and the transverse spin relaxation is hence divided into three regimes in the scattering length dependence: the normal weak scattering regime, the anomalous Elliott-Yafet-like regime and the strong scattering regime. On the other hand, the longitudinal spin relaxation is again divided into the anomalous EY-like and normal strong scattering regimes. ...

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preprint2012arXiv

Electron spin relaxation in GaAs$_{1-x}$Bi$_x$: Effects of spin-orbit tuning by Bi incorporation

The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$ with Bi composition $0\le x \le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease the spin relaxation time as a consequence of the modification of the spin-orbit interaction. We demonstrate that the density and temperature dependences of spin relaxation time in GaAs$_{1-x}$Bi$_x$ resemble the ones in GaAs. Meanwhile, the Bir-Aronov-Pikus mechanism is found to be negligible compared to the D'yakonov-Perel' mechanism in intrinsic sample. Due to the absence of direct measurement of the electron effective mass in the whole compositional range under investigation, we further explore the effect of a possible variation of electron effective mass on the electron spin relaxation.

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preprint2012arXiv

Electron spin relaxation in graphene with random Rashba field: Comparison of D'yakonov-Perel' and Elliott-Yafet--like mechanisms

Aiming to understand the main spin relaxation mechanism in graphene, we investigate the spin relaxation with random Rashba field induced by both adatoms and substrate, by means of the kinetic spin Bloch equation approach. The charged adatoms on one hand enhance the Rashba spin-orbit coupling locally and on the other hand serve as Coulomb potential scatterers. Both effects contribute to spin relaxation limited by the D'yakonov-Perel' mechanism. In addition, the random Rashba field also causes spin relaxation by spin-flip scattering, manifesting itself as an Elliott-Yafet--like mechanism. Both mechanisms are sensitive to the correlation length of the random Rashba field, which may be affected by the environmental parameters such as electron density and temperature. By fitting and comparing the experiments from the Groningen group [Józsa {\it et al.}, Phys. Rev. B {\bf 80}, 241403(R) (2009)] and Riverside group [Pi {\it et al.}, Phys. Rev. Lett. {\bf 104}, 187201 (2010); Han and Kawakami, {\it ibid.} {\bf 107}, 047207 (2011)] which show either D'yakonov-Perel'-- (with the spin relaxation rate being inversely proportional to the momentum scattering rate) or Elliott-Yafet--like (with the spin relaxation rate being proportional to the momentum scattering rate) properties, we suggest that the D'yakonov-Perel' mechanism dominates the spin relaxation in graphene. The latest experimental finding of a nonmonotonic dependence of spin relaxation time on diffusion coefficient by Jo {\it et al.} [Phys. Rev. B {\bf 84}, 075453 (2011)] is also well reproduced by our model.

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preprint2012arXiv

Electron spin relaxation in rippled graphene with low mobilities

We investigate spin relaxation in rippled graphene where curvature induces a Zeeman-like spin-orbit coupling with opposite effective magnetic fields along the graphene plane in ${\bf K}$ and ${\bf K}^\prime$ valleys. The joint effect of this Zeeman-like spin-orbit coupling and the intervalley electron-optical phonon scattering opens a spin relaxation channel, which manifests itself in low-mobility samples with the electron mean free path being smaller than the ripple size. Due to this spin relaxation channel, with the increase of temperature, the relaxation time for spins perpendicular to the effective magnetic field first decreases and then increases, with a minimum of several hundred picoseconds around room temperature. However, the spin relaxation along the effective magnetic field is determined by the curvature-induced Rashba-type spin-orbit coupling, leading to a temperature-insensitive spin relaxation time of the order of microseconds. Therefore, the in-plane spin relaxation in low-mobility rippled graphene is anisotropic. Nevertheless, in the presence of a small perpendicular magnetic field, as usually applied in the Hanle spin precession measurement, the anisotropy of spin relaxation is strongly suppressed.

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preprint2012arXiv

Electron spin rephasing in $n$-type (001) GaAs quantum wells

We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $π$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is based on the kinetic spin Bloch equation approach with all the relevant scatterings explicitly included. We find that the rephasing pulse sequence with a long inter-pulse spacing only has a marginal influence on the spin lifetime in both the strong and weak scattering limits. We show that the spin lifetime can be significantly increased by reducing the inter-pulse spacing. More interestingly, we show that the temperature and density dependences of the spin lifetime in the case of short inter-pulse spacing coincide with those of the momentum scattering time in the low temperature regime, where nonmonotonic behaviors can appear. The origin of this feature is that the scattering under the quick rephasing manipulation mainly performs as the source of the dephasing channel instead of the key to suppress the inhomogeneous broadening. The contributions of the relevant scattering mechanisms are also discussed.

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preprint2012arXiv

Finite-size effect of antiferromagnetic transition and electronic structure in LiFePO4

The finite-size effect on the antiferromagnetic (AF) transition and electronic configuration of iron has been observed in LiFePO4. Determination of the scaling behavior of the AF transition temperature (TN) versus the particle-size dimension (L) in the critical regime 1-TN(L)/TN(XTL)\simL^-1 reveals that the activation nature of the AF ordering strongly depends on the surface energy. In addition, the effective magnetic moment that reflects the electronic configuration of iron in LiFePO4 is found to be sensitive to the particle size. An alternative structural view based on the polyatomic ion groups of (PO4)3- is proposed.

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preprint2012arXiv

Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells

We provide a microscopic theory for the Doppler velocimetry of spin propagation in the presence of spatial inhomogeneity, driving electric field and the spin orbit coupling in semiconductor quantum wells in a wide range of temperature regime based on the kinetic spin Bloch equation. It is analytically shown that under an applied electric field, the spin density wave gains a time-dependent phase shift $ϕ(t)$. Without the spin-orbit coupling, the phase shift increases linearly with time and is equivalent to a normal Doppler shift in optical measurements. Due to the joint effect of spin-orbit coupling and the applied electric field, the phase shift behaviors differently at the early and the later stages. At the early stage, the phase shifts are the same with or without the spin-orbit coupling. While at the later stage, the phase shift deviates from the normal Doppler one when the spin-orbit coupling is present. The crossover time from the early normal Doppler behavior to the anomalous one at the later stage is inversely proportional to the spin diffusion coefficient, wave vector of the spin density wave and the spin-orbit coupling strength. In the high temperature regime, the crossover time becomes large as a result of the decreased spin diffusion coefficient. The analytic results capture all the quantitative features of the experimental results, while the full numerical calculations agree quantitatively well with the experimental data obtained from the Doppler velocimetry of spin propagation [Yang {\it et al.}, Nat. Phys. {\bf 8}, 153 (2012)]. We further predict that the coherent spin precession, originally thought to be broken down at high temperature, is robust up to the room temperature for narrow quantum wells. We point out that one has to carry out the experiments longer to see the effect of the coherent spin precession at higher temperature due to the larger crossover time.

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preprint2012arXiv

Single-parameter quantum charge and spin pumping in armchair graphene nanoribbons

We investigate quantum charge and spin pumping in armchair graphene nanoribbons under a single ac gate voltage connected with nonmagnetic/ferromagnetic leads via the nonequilibrium Green's function method. In the case of nonmagnetic leads, where only part of the nanoribbon is subject to an ac gate voltage to break the left-right spatial symmetry, we discover that peaks of the charge pumping current appear at the Fermi energies around the subband edges in the ac-field-free region of the nanoribbon. In the case of ferromagnetic leads with the lead magnetizations being antiparallel to break the left-right symmetry, similar peaks appear in the spin pumping current when the Fermi energies are around the edges of the the majority-spin subbands in the ferromagnetic leads. All these peaks originate from the pronounced symmetry breaking in the transmissions with energies being around the corresponding subband edges. Moreover, we predict a {\em pure} spin current in the case of ferromagnetic leads with the whole graphene nanoribbon under an ac gate voltage. The ac-field-strength and -frequency dependences of the pumping current are also investigated with the underlying physics revealed.

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preprint2012arXiv

Some comments on the note "Comment on 'Single-parameter quantum charge and spin pumping in armchair graphene nanoribbons' by Zhu and Berakdar (arXiv:1207.3457)"

In response to the comment by Zhu and Berakdar (arXiv:1207.3457) that the physical system considered by them in their previous work [Ding et al., PRB 84, 115433 (2011)] is conceptually different from ours in the appendix of our latest paper [Zhou and Wu, arXiv:1206.3435], we show why they are relevant and further point out conceptually the problems in their work. We also point out that the main supporting arguments in their comment are incorrect.

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preprint2012arXiv

Strongly modulated transmissions in gapped armchair graphene nanoribbons with sidearm or on-site gate voltage

We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character. By introducing one sidearm or on-site gate to the graphene nanoribbon, conduction peaks appear inside the gap regime. By further applying two sidearms or on-site gates, these peaks are broadened to conduction plateaus with a wide energy window, thanks to the resonance from the dual structure. The position of the conduction windows inside the gap can be fully controlled by the length of the sidearms or the on-site gate voltages, which allows "on" and "off" operations for a specific energy window inside the gap regime. The high robustness of both the switch-off character and the conduction windows is demonstrated and shows the feasibility of the proposed dual structures for real applications.

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preprint2011arXiv

Dynamics of photoexcited carriers in graphene

The nonequilibrium dynamics of carriers and phonons in graphene is investigated by solving the microscopic kinetic equations with the carrier-phonon and carrier-carrier Coulomb scatterings explicitly included. The Fermi distribution of hot carriers are found to be established within 100 fs and the temperatures of electrons in the conduction and valence bands are very close to each other, even when the excitation density and the equilibrium density are comparable, thanks to the strong inter-band Coulomb scattering. Moreover, the temporal evolutions of the differential transmission obtained from our calculations agree with the experiments by Wang et al. [Appl. Phys. Lett. 96, 081917 (2010)] and Hale et al. [Phys. Rev. B 83, 121404 (2011)] very well, with two distinct differential transmission relaxations presented. We show that the fast relaxation is due to the rapid carrier-phonon thermalization and the slow one is mainly because of the slow decay of hot phonons. In addition, it is found that the temperatures of the hot phonons in different branches are different and the temperature of hot carriers can be even lower than that of the hottest phonons. Finally, we show that the slow relaxation rate exhibits a mild valley in the excitation density dependence and is linearly dependent on the probe-photon energy.

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preprint2011arXiv

Electron spin diffusion and transport in graphene

We investigate the spin diffusion and transport in a graphene monolayer on SiO$_2$ substrate by means of the microscopic kinetic spin Bloch equation approach. The substrate causes a strong Rashba spin-orbit coupling field $\sim 0.15$ meV, which might be accounted for by the impurities initially present in the substrate or even the substrate-induced structure distortion. By surface chemical doping with Au atoms, this Rashba spin-orbit coupling is further strengthened as the adatoms can distort the graphene lattice from $sp^2$ to $sp^3$ bonding structure. By fitting the Au doping dependence of spin relaxation from Pi {\sl et al.} [Phys. Rev. Lett. {\bf 104}, 187201 (2010)], the Rashba spin-orbit coupling coefficient is found to increase approximately linearly from 0.15 to 0.23 meV with the increase of Au density. With this strong spin-orbit coupling, the spin diffusion or transport length is comparable with the experimental values. In the strong scattering limit (dominated by the electron-impurity scattering in our study), the spin diffusion is uniquely determined by the Rashba spin-orbit coupling strength and insensitive to the temperature, electron density as well as scattering. With the presence of an electric field along the spin injection direction, the spin transport length can be modulated by either the electric field or the electron density. (The remaining is omitted due to the limit of space)

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preprint2011arXiv

Electron spin diffusion at the interface of multiferroic oxides

We study the spin diffusion in a two-dimensional electron gas at the interface of oxide heterostructure LaAlO$_3$/SrTiO$_3$ grown on multiferroic TbMnO$_3$ at 15 K by means of the kinetic spin Bloch equation approach. The spiral magnetic moments of Mn$^{3+}$ in TbMnO$_3$ interact with the diffusing spins at the LaAlO$_3$/SrTiO$_3$ interface via the Heisenberg exchange interaction. It is demonstrated that the spin diffusion length is always finite, despite the polarization direction of the injected spins. Our study also reveals the important role played by the Coulomb scattering, which can effectively suppress the spin diffusion.

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preprint2011arXiv

Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs

We investigate the temperature dependence of the coefficients in the Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs by employing the Zener model. We first calculate the hole spin relaxation time based on the microscopic kinetic equation. We find that the hole spin relaxation time is typically several tens femtoseconds and can present a nonmonotonic temperature dependence due to the variation of the interband spin mixing, influenced by the temperature related Zeeman splitting. With the hole spin relaxation time, we are able to calculate the coefficients in the Landau-Lifshitz-Gilbert equation, such as the Gilbert damping, nonadiabatic spin torque, spin stiffness and vertical spin stiffness coefficients. We find that the nonadiabatic spin torque coefficient $β$ is around $0.1\sim 0.3$ at low temperature, which is consistent with the experiment [Adam {\em et al.}, Phys. Rev. B {\bf 80}, 193204 (2009)]. As the temperature increases, $β$ monotonically increases and can exceed one in the vicinity of the Curie temperature. In the low temperature regime with $β<1$, the Gilbert damping coefficient $α$ increases with temperature, showing good agreement with the experiments [Sinova {\em et al.}, Phys. Rev. B {\bf 69}, 085209 (2004); Khazen {\em et al.}, {\em ibid.} {\bf 78}, 195210 (2008)]. Furthermore, we predict that $α$ decreases with increasing temperature once $β>1$ near the Curie temperature. We also find that the spin stiffness decreases with increasing temperature, especially near the Curie temperature due to the modification of the finite $β$. Similar to the Gilbert damping, the vertical spin stiffness coefficient is also found to be nonmonotonically dependent on the temperature.

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preprint2011arXiv

Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric fields

Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric field is investigated from the microscopic kinetic spin Bloch equation approach with the $Γ$ and $L$ valleys included. We show that the spin relaxation time decreases monotonically with the electric field, which differs from the two-dimensional case and is recognized due to to the cubic form of the Dresselhauss spin-orbit coupling of the $Γ$ valley in bulk. In addition to the direct modulation of the spin relaxation time, the electric field also strongly influences the density and temperature dependences of the spin relaxation. In contrast to the monotonic decrease with increasing lattice temperature in the field-free condition, the spin relaxation time is shown to decrease more slowly under the influence of the electric field and even to increase monotonically in the case with small electron density and high electric field. We even predict a peak in weakly doped samples under moderate electric field due to the anomalous lattice-temperature dependence of the hot-electron temperature. As for the $L$ valleys, we show that instead of playing the role of a &#34;drain&#34; of the total spin polarization as in quantum well systems, in bulk they serve as a &#34;momentum damping area&#34;, which prevents electrons from drifting to higher momentum states. This tends to suppress the inhomogeneous broadening and hence leads to an increase of the spin relaxation time.

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preprint2011arXiv

Optical response of graphene under intense terahertz fields

Optical responses of graphene in the presence of intense circularly and linearly polarized terahertz fields are investigated based on the Floquet theory. We examine the energy spectrum and density of states. It is found that gaps open in the quasi-energy spectrum due to the single-photon/multi-photon resonances. These quasi-energy gaps are pronounced at small momentum, but decrease dramatically with the increase of momentum and finally tend to be closed when the momentum is large enough. Due to the contribution from the states at large momentum, the gaps in the density of states are effectively closed, in contrast to the prediction in the previous work by Oka and Aoki [Phys. Rev. B {\bf 79}, 081406(R) (2009)]. We also investigate the optical conductivity for different field strengths and Fermi energies, and show the main features of the dynamical Franz-Keldysh effect in graphene. It is discovered that the optical conductivity exhibits a multi-step-like structure due to the sideband-modulated optical transition. It is also shown that dips appear at frequencies being the integer numbers of the applied terahertz field frequency in the case of low Fermi energy, originating from the quasi-energy gaps at small momentums. Moreover, under a circularly polarized terahertz field, we predict peaks in the middle of the &#34;steps&#34; and peaks induced by the contribution from the states around zero momentum in the optical conductivity.

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preprint2011arXiv

Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots

We study the singlet-triplet relaxation due to the spin-orbit coupling assisted by the electron-phonon scattering in two-electron SiGe/Si/SiGe double quantum dots in the presence of an external magnetic field in either Faraday or Voigt configuration. By explicitly including the electron-electron Coulomb interaction and the valley splitting induced by the interface scattering, we employ the exact-diagonalization method to obtain the energy spectra and the eigenstates. Then we calculate the relaxation rates with the Fermi golden rule. We find that the transition rates can be effectively tuned by varying the external magnetic field and the interdot distance. Especially in the vicinity of the anticrossing point, the transition rates show intriguing features. We also investigate the electric-field dependence of the transition rates, and find that the transition rates are almost independent of the electric field. This is of great importance in the spin manipulation since the lifetime remains almost the same during the change of the qubit configuration from $(1,1)$ to $(2,0)$ by the electric field.

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preprint2011arXiv

Spin-orbit coupling and $g$-factor of $X$-valley in cubic GaN

We report our theoretically investigation on the spin-orbit coupling and $g$-factor of the $X$-valley in cubic GaN. We find that the spin-orbit coupling coefficient from $sp^3d^5s^\ast$ tight-binding model is 0.029\,eV$\cdot$Å, which is comparable with that in cubic GaAs. By employing the ${\bf k}\cdot{\bf p}$ theory, we find that the $g$-factor in this case is only slightly different from the free electron $g$-factor. These results are expected to be important for the on-going study on spin dynamics far away from equilibrium in cubic GaN.

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preprint2011arXiv

Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots: fine structure and spin relaxation

Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian. The electron-hole exchange interaction Hamiltonian, which consists of the long- and short-range parts, is derived within the effective-mass approximation by taking into account the conduction, heavy- and light-hole bands, and especially the split-off band. The scheme applied in this work allows the description of excitons in both the strong and weak confinement regimes. The importance of treating the direct electron-hole Coulomb interaction unperturbatively is demonstrated. We show in our calculation that the light-hole and split-off bands are negligible when considering the exciton fine structure, even for GaN quantum dots, and the short-range exchange interaction is irrelevant when considering the optically active doublet splitting. We point out that the long-range exchange interaction, which is neglected in many previous works, contributes to the energy splitting between the bright and dark states, together with the short-range exchange interaction. Strong dependence of the optically active doublet splitting on the anisotropy of dot shape is reported. Large doublet splittings up to 600 $μ$eV, and even up to several meV for small dot size with large anisotropy, is shown in GaN quantum dots. The spin relaxation between the lowest two optically active exciton states in GaN quantum dots is calculated, showing a strong dependence on the dot anisotropy. Long exciton spin relaxation time is reported in GaN quantum dots. These findings are in good agreement with the experimental results.

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preprint2010arXiv

Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells

We have studied the effect of nonequilibrium longitudinal optical phonons on hot-electron spin relaxation in $n$-type GaAs quantum wells. The longitudinal optical phonons, due to the finite relaxation rate, are driven to nonequilibrium states by electrons under an in-plane electric field. The nonequilibrium phonons then in turn influence the electron spin relaxation properties via modifying the electron heating and drifting. The spin relaxation time is elongated due to the enhanced electron heating and thus the electron-phonon scattering in the presence of nonequilibrium phonons. The frequency of spin precession, which is roughly proportional to the electron drift velocity, can be either increased (at low electric field and/or high lattice temperature) or decreased (at high electric field and/or low lattice temperature). The nonequilibrium phonon effect is more pronounced when the electron density is high and the impurity density is low.

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preprint2010arXiv

Effect of spin-conserving scattering on Gilbert damping in ferromagnetic semiconductors

The Gilbert damping in ferromagnetic semiconductors is theoretically investigated based on the $s$-$d$ model. In contrast to the situation in metals, all the spin-conserving scattering in ferromagnetic semiconductors supplies an additional spin relaxation channel due to the momentum dependent effective magnetic field of the spin-orbit coupling, thereby modifies the Gilbert damping. In the presence of a pure spin current, we predict a new contribution due to the interplay of the anisotropic spin-orbit coupling and a pure spin current.

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preprint2010arXiv

Electric manipulation of electron spin relaxation induced by confined phonons in nanowire-based double quantum dots

We investigate theoretically the electron spin relaxation in single-electron nanowire-based semiconductor double quantum dots induced by confined phonons and find that the electron spin relaxation rate can be efficiently manipulated by external electric fields in such system. An anti-crossing, due to the coaction of the electric field, the magnetic field and the spin-orbit coupling, exists between the lowest two excited states. Both energies and spins of the electron states can be efficiently tuned by the electric field around the anti-crossing point. Multiple sharp peaks exist in the electric-field dependence of the spin relaxation rate induced by the confined phonons, which can be ascribed to the large density of states of the confined phonons at the van Hove singularities. This feature suggests that the nanowire-based double quantum dots can be used as electric tunable on-and-off spin switches, which are more sensitive and flexible than the ones based on quantum-well based double quantum dots. The temperature dependence of the spin relaxation rate at the anti-crossing point are calculated and a smooth peak, indicating the importance of the contribution of the off-diagonal elements of the density matrix to the spin relaxation, is observed.

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preprint2010arXiv

Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction

Electron spin relaxation in graphene on a substrate is investigated from the fully microscopic kinetic spin Bloch equation approach. All the relevant scatterings, such as the electron-impurity, electron--acoustic-phonon, electron--optical-phonon, electron--remote-interfacial-phonon, as well as electron-electron Coulomb scatterings, are explicitly included. Our study concentrates on clean intrinsic graphene, where the spin-orbit coupling from the adatoms can be neglected. We discuss the effect of the electron-electron Coulomb interaction on spin relaxation under various conditions. It is shown that the electron-electron Coulomb scattering plays an important role in spin relaxation at high temperature. We also find a significant increase of the spin relaxation time for high spin polarization even at room temperature, which is due to the Coulomb Hartree-Fock contribution-induced effective longitudinal magnetic field. It is also discovered that the spin relaxation time increases with the in-plane electric field due to the hot-electron effect, which is different from the non-monotonic behavior in semiconductors. Moreover, we show that the electron-electron Coulomb scattering in graphene is not strong enough to establish the steady-state hot-electron distribution in the literature and an alternative approximate one is proposed based on our computation.

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preprint2010arXiv

Hole spin relaxation in intrinsic and $p$-type bulk GaAs

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D&#39;yakonov-Perel&#39; and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on the temperature and predict a valley in the density dependence of the hole spin relaxation time at low temperature due to the hole-electron scattering. In $p$-type GaAs, we predict a peak in the spin relaxation time against the hole density at low temperature, which originates from the distinct behaviors of the screening in the degenerate and nondegenerate regimes. The competition between the screening and the momentum exchange during scattering events can also lead to a valley in the density dependence of the hole spin relaxation time in the low density regime. At high temperature, the effect of the screening is suppressed due to the small screening constant. Moreover, we predict a nonmonotonic dependence of the hole spin relaxation time on temperature associated with the screening together with the hole-phonon scattering. Finally, we find that the D&#39;yakonov-Perel&#39; mechanism can markedly contribute to the .... (omitted due to the limit of space)

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preprint2010arXiv

Singlet-triplet relaxation in multivalley silicon single quantum dots

We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden rule. The electron-electron Coulomb interaction, which is crucial in the electronic structure, is explicitly included. The multivalley effect induced by the interface scattering is also taken into account. We first study the configuration with a magnetic field in the Voigt configuration and identify the relaxation channel of the experimental data by Xiao {\em et al.} [Phys. Rev. Lett. {\bf 104}, 096801 (2010)]. Good agreement with the experiment is obtained. Moreover, we predict a peak in the magnetic-field dependence of the singlet-triplet relaxation rate induced by the anticrossing of the singlet and triplet states. We then work on the system with a magnetic field in the Faraday configuration, where the different values of the valley splitting are discussed. In the case of large valley splitting, we find the transition rates can be effectively manipulated by varying the external magnetic field and the dot size. The intriguing features of the singlet-triplet relaxation in the vicinity of the anticrossing point are analyzed. In the case of small valley splitting, we find that the transition rates are much smaller than those in the case of large valley splitting, resulting from the different configurations of the triplet states.

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preprint2010arXiv

Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells

We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity, electron--longitudinal-optical-phonon, electron--acoustic-phonon, as well as electron-electron Coulomb scatterings are explicitly included. It is shown that our calculation reproduces the experimental data by Müller {\em et al.} [Phys. Rev. Lett. {\bf 101}, 206601 (2008)] for a reasonable choice of parameter values. We also predict that the temperature dependence of spin relaxation time presents a peak in the case with low impurity density, which originates from the electron-electron Coulomb scattering.

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preprint2010arXiv

Spin relaxation in $n$-type (111) GaAs quantum wells

We investigate the spin relaxation limited by the D&#39;yakonov-Perel&#39; mechanism in $n$-type (111) GaAs quantum wells, by means of the kinetic spin Bloch equation approach. In (111) GaAs quantum wells, the in-plane effective magnetic field from the D&#39;yakonov-Perel&#39; term can be suppressed to zero on a special momentum circle under the proper gate voltage, by the cancellation between the Dresselhaus and Rashba spin-orbit coupling terms. When the spin-polarized electrons mainly distribute around this special circle, the in-plane inhomogeneous broadening is small and the spin relaxation can be suppressed, especially for that along the growth direction of quantum well. This cancellation effect may cause a peak (the cancellation peak) in the density or temperature dependence of the spin relaxation time. In the density (temperature) dependence, the interplay between the cancellation peak and the ordinary density (Coulomb) peak leads to rich features of the density (temperature) dependence of the spin relaxation time. The effect of impurities, with its different weights on the cancellation peak and the Coulomb peak in the temperature dependence of the spin relaxation, is revealed. We also show the anisotropy of the spin relaxation with respect to the spin-polarization direction.

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preprint2010arXiv

Unique Electron Spin Relaxation Induced by Confined Phonons in Nanowire-Based Quantum Dots

Electron spin relaxation in nanowire-based quantum dots induced by confined phonons is investigated theoretically. Due to the one-dimensional nature of the confined phonons, the van Hove singularities of the confined phonons and the zero of the form factor of the electron-phonon coupling can lead to unique features of the spin relaxation rate. Extremely strong spin relaxation can be obtained at the van Hove singularity. Meanwhile the spin relaxation rate can also be greatly suppressed at the zero of the form factor. This unique feature indicates the flexibility of nanowire-based quantum dots in the manipulation of spin states. It also offers a way to probe the property of the confined phonons.

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preprint2010arXiv

Voltage controlled spin precession in InAs quantum wells

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the scattering explicitly included. Our result partially supports the claim of the realization of the Datta-Das spin-injected field effect transistor by Koo {\it et al.} [Science {\bf 325}, 1515 (2009)]. We also show that the scattering plays an important role in spin diffusion in such a system.

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preprint2009arXiv

Comment on &#34;Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature&#34;

We comment on the conclusion by Ma et al. [Appl. Phys. Lett. {\bf 94}, 241112 (2009)] that the Elliott-Yafet mechanism is more important than the D&#39;yakonov-Perel&#39; mechanism at high carrier density in intrinsic bulk CdTe at room temperature. We point out that the spin relaxation is solely from the D&#39;yakonov-Perel&#39; mechanism. The observed peak in the density dependence of spin relaxation time is exactly what we predicted in a recent work [Phys. Rev. B {\bf 79}, 125206 (2009)].

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preprint2009arXiv

Theory of the spin relaxation of conduction electrons in silicon

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation rates for hot electrons are predicted.

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preprint2007arXiv

Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of spin polarization, P, of the electrons. By increasing the initial spin polarization from the low-P regime to a significant P of several percent, we find that the spin dephasing time, $T_2^\ast$, increases from about 20 ps to 200 ps; Moreover, $T_2^\ast$ increases with temperature at small spin polarization but decreases with temperature at large spin polarization. All these features are in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Measurements as a function of spin polarization at fixed electron density are performed to further confirm the theory. A fully microscopic calculation is performed by setting up and numerically solving the kinetic spin Bloch equations, including the D&#39;yakonov-Perel&#39; and the Bir-Aronov-Pikus mechanisms, with {\em all} the scattering explicitly included. We reproduce all principal features of the experiments, i.e., a dramatic decrease of spin dephasing with increasing $P$ and the temperature dependences at different spin polarizations.

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preprint2003arXiv

Spin relaxations in semiconductor quantum dots

The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field, the quantum dot size, the temperature as well as the electric field on the spin relaxation time are investigated in detail. Moreover, we show that the perturbation method widely used in the literature is inadequate in accounting for the electron structure and therefore the spin relaxation time.

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