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Researcher profile

J. Rioux

J. Rioux contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2014arXiv

Interference of stimulated electronic Raman scattering and linear absorption in coherent control

We consider quantum interference effects in carrier and photocurrent excitation in graphene using coherent electromagnetic field components at frequencies $ω$ and $2ω$. The response of the material at the fundamental frequency $ω$ is presented, and it is shown that one-photon absorption at $ω$ interferes with stimulated electronic Raman scattering (combined $2ω$ absorption and $ω$ emission) to result in a net contribution to the current injection. This interference occurs with a net energy absorption of $\hbarω$ and exists in addition to the previously studied interference occurring with a net energy absorption of $2\hbarω$ under the same irradiation conditions. Due to the absence of a bandgap and the possibility to block photon absorption by tuning the Fermi level, graphene is the perfect material to study this contribution. We calculate the polarization dependence of this all-optical effect for intrinsic graphene and show that the combined response of the material at both $ω$ and $2ω$ leads to an anisotropic photocurrent injection, whereas the magnitude of the injection current in doped graphene, when transitions at $ω$ are Pauli blocked, is isotropic. By considering the contribution to coherent current control from stimulated electronic Raman scattering, we find that graphene offers tunable, polarization sensitive applications. Coherent control due to the interference of stimulated electronic Raman scattering and linear absorption is relevant not only for graphene but also for narrow-gap semiconductors, topological insulators, and metals.

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preprint2011arXiv

Current injection by coherent one- and two-photon excitation in graphene and its bilayer

Coherent control of optically-injected carrier distributions in single and bilayer graphene allows the injection of electrical currents. Using a tight-binding model and Fermi's golden rule, we derive the carrier and photocurrent densities achieved via interference of the quantum amplitudes for two-photon absorption at a fundamental frequency, $ω$, and one-photon absorption at the second harmonic, $2ω$. Strong currents are injected under co-circular and linear polarizations. In contrast, opposite-circular polarization yields no net current. For single-layer graphene, the magnitude of the current is unaffected by the rotation of linear-polarization axes, in contrast with the bilayer and with conventional semiconductors. The dependence of the photocurrent on the linear-polarization axes is a clear and measurable signature of interlayer coupling in AB-stacked multilayer graphene. We also find that single and bilayer graphene exhibit a strong, distinct linear-circular dichroism in two-photon absorption.

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preprint2011arXiv

Full Band Structure Calculation of Two-photon Indirect Absorption in Bulk Silicon

Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.

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preprint2011arXiv

Theory of optical spin orientation in silicon

We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the selection rules, the contribution to the carrier and spin injection in each conduction band valley from each phonon branch and each valence band, and the temperature dependence of these processes. The transition from the heavy hole band to the lowest conduction band dominates the injection due to the large joint density of states. For incident light propagating along the $[00\bar{1}]$ direction, the injection rates and the degree of spin polarization of injected electrons show strong valley anisotropy. The maximum degree of spin polarization is at the injection edge with values 25% at low temperature and 15% at high temperature.

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preprint2011arXiv

Two-photon Indirect Optical Injection and Two-color Coherent Control in Bulk Silicon

Using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states in bulk silicon, we theoretically investigate two-photon indirect optical injection of carriers and spins and two-color coherent control of the motion of the injected carriers and spins. For two-photon indirect carrier and spin injection, we identify the selection rules of band edge transitions, the injection in each conduction band valley, and the injection from each phonon branch at 4 K and 300 K. At 4 K, the TA phonon-assisted transitions dominate the injection at low photon energies, and the TO phonon-assisted at high photon energies. At 300 K, the former dominates at all photon energies of interest. The carrier injection shows anisotropy and linear-circular dichroism with respect to light propagation direction. For light propagating along the $<001>$ direction, the carrier injection exhibits valley anisotropy, and the injection into the $Z$ conduction band valley is larger than that into the $X/Y$ valleys. For $σ^-$ light propagating along the $<001>$ ($<111>$) direction, the degree of spin polarization gives a maximum value about 20% (6%) at 4 K and -10% (20%) at 300 K, and at both temperature shows abundant structure near the injection edges due to contributions from different phonon branches. Forthe two-color coherent current injection with an incident optical field composed of a fundamental frequency and its second harmonic, the response tensors of the electron (hole) charge and spin currents are calculated at 4 K and 300 K. We show the current control for three different polarization scenarios. The spectral dependence of the maximum swarm velocity shows that the direction of charge current reverses under increase in photon energy.

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