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Researcher profile

J. Fabian

J. Fabian contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

5 published item(s)

preprint2012arXiv

Theory of thermal spin-charge coupling in electronic systems

The interplay between spin transport and thermoelectricity offers several novel ways of generating, manipulating, and detecting nonequilibrium spin in a wide range of materials. Here we formulate a phenomenological model in the spirit of the standard model of electrical spin injection to describe the electronic mechanism coupling charge, spin, and heat transport and employ the model to analyze several different geometries containing ferromagnetic (F) and nonmagnetic (N) regions: F, F/N, and F/N/F junctions which are subject to thermal gradients. We present analytical formulas for the spin accumulation and spin current profiles in those junctions that are valid for both tunnel and transparent (as well as intermediate) contacts. For F/N junctions we calculate the thermal spin injection efficiency and the spin accumulation induced nonequilibrium thermopower. We find conditions for countering thermal spin effects in the N region with electrical spin injection. This compensating effect should be particularly useful for distinguishing electronic from other mechanisms of spin injection by thermal gradients. For F/N/F junctions we analyze the differences in the nonequilibrium thermopower (and chemical potentials) for parallel and antiparallel orientations of the F magnetizations, as evidence and a quantitative measure of the spin accumulation in N. Furthermore, we study the Peltier and spin Peltier effects in F/N and F/N/F junctions and present analytical formulas for the heat evolution at the interfaces of isothermal junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Theory of optical spin orientation in silicon

We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the selection rules, the contribution to the carrier and spin injection in each conduction band valley from each phonon branch and each valence band, and the temperature dependence of these processes. The transition from the heavy hole band to the lowest conduction band dominates the injection due to the large joint density of states. For incident light propagating along the $[00\bar{1}]$ direction, the injection rates and the degree of spin polarization of injected electrons show strong valley anisotropy. The maximum degree of spin polarization is at the injection edge with values 25% at low temperature and 15% at high temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Pseudospin excitations in coaxial nanotubes

In a 2DEG confined to two coaxial tubes the `tube degree of freedom' can be described in terms of pseudospin-1/2 dynamics. The presence of tunneling between the two tubes leads to a collective oscillation known as pseudospin resonance. We employ perturbation theory to examine the dependence of the frequency of this mode with respect to a coaxial magnetic field for the case of small intertube distances. Coulomb interaction leads to a shift of the resonance frequency and to a finite lifetime of the pseudospin excitations. The presence of the coaxial magnetic field gives rise to pronounced peaks in the shift of the resonance frequency. For large magnetic fields this shift vanishes due to the effects of Zeeman splitting. Finally, an expression for the linewidth of the resonance is derived. Numerical analysis of this expression suggests that the linewidth strongly depends on the coaxial magnetic field, which leads to several peaks of the linewidth as well as regions where damping is almost completely suppressed.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Beating of Friedel oscillations induced by spin-orbit interaction

By exploiting our recently derived exact formula for the Lindhard polarization function in the presence of Bychkov-Rashba (BR) and Dresselhaus (D) spin-orbit interaction (SOI), we show that the interplay of different SOI mechanisms induces highly anisotropic modifications of the static dielectric function. We find that under certain circumstances the polarization function exhibits doubly-singular behavior, which leads to an intriguing novel phenomenon, beating of Friedel oscillations. This effect is a general feature of systems with BR+D SOI and should be observed in structures with a sufficiently strong SOI.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Theory of the spin relaxation of conduction electrons in silicon

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation rates for hot electrons are predicted.

0 citations0 reviewsNo code linkedOpen access