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J. J. Lin

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Published work

4 published item(s)

preprint2013arXiv

Phase diagram and physical properties of NaFe$_{1-x}$Cu$_x$As single crystals

A series of high quality NaFe$_{1-x}$Cu$_x$As single crystals has been grown by a self-flux technique, which were systematically characterized via structural, transport, thermodynamic, and high pressure measurements. Both the structural and magnetic transitions are suppressed by Cu doping, and bulk superconductivity is induced by Cu doping. Superconducting transition temperature ($T_c$) is initially enhanced from 9.6 to 11.5 K by Cu doping, and then suppressed with further doping. A phase diagram similar to NaFe$_{1-x}$Co$_x$As is obtained except that insulating instead of metallic behavior is observed in extremely overdoped samples. $T_c$'s of underdoped, optimally doped, and overdoped samples are all notably enhanced by applying pressure. Although a universal maximum transition temperature ($T_c^{max}$) of about 31 K under external pressure is observed in underdoped and optimally doped NaFe$_{1-x}$Co$_x$As, $T_c^{max}$ of NaFe$_{1-x}$Cu$_x$As is monotonously suppressed by Cu doping, suggesting that impurity potential of Cu is stronger than Co in NaFeAs. The comparison between Cu and Co doping effect in NaFeAs indicates that Cu serves as an effective electron dopant with strong impurity potential, but part of the doped electrons are localized and do not fill the energy bands as predicted by the rigid-band model.

preprint2009arXiv

Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings

We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.

preprint2007arXiv

Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films

We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln$T$ dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.

preprint2002arXiv

Electron dephasing near zero temperature: an experimental review

The behavior of the electron dephasing time near zero temperature, $τ_ϕ^0$, has recently attracted vigorous attention. This renewed interest is primarily concerned with whether $τ_ϕ^0$ should reach a finite or an infinite value as $T \to$ 0. While it is accepted that $τ_ϕ^0$ should diverge if there exists only electron-electron (electron-phonon) scattering, several recent measurements have found that $τ_ϕ^0$ depends only very weakly on temperature, if at all, when $T$ is sufficiently low. This article discusses the current experimental status of "the saturation problem", and concludes that the origin(s) for this widely observed saturation are still unresolved.