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K. Kono

K. Kono contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2021arXiv

Coupled pair of one and two dimensional magneto-plasmons on electrons on helium

Electrons on the liquid helium surface form an extremely clean two dimensional system where different plasmon-excitations can coexist. Under a magnetic field time reversal symmetry is broken and all the bulk magneto-plasmons become gaped at frequencies below cyclotron resonance while chiral one dimensional edge magneto-plasmons appear at the system perimeter. We theoretically show that the presence of a homogeneous density gradient in the electron gas leads to the formation of a delocalized magneto-plasmon mode in the same frequency range as the lowest frequency edge-magnetoplasmon mode. We experimentally confirm its existence by measuring the corresponding resonance peak in frequency dependence of the admittance of the electron gas. This allows to realize a prototype system to investigate the coupling between a chiral one-dimensional mode and a single delocalized bulk mode. Such a model system can be important for the understanding of transport properties of topological materials where states of different dimensionality can coexist.

preprint2012arXiv

Quantized escape and formation of edge channels at high Landau levels

We present nonlocal resistance measurements in an ultra high mobility two dimensional electron gas. Our experiments show that even at weak magnetic fields classical guiding along edges leads to a strong non local resistance on macroscopic distances. In this high Landau level regime the transport along edges is dissipative and can be controlled by the amplitude of the voltage drop along the edge. We report resonances in the nonlocal transport as a function of this voltage that are interpreted as escape and formation of edge channels.

preprint2007arXiv

Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films

We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln$T$ dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.