Researcher profile

S. M. Huang

S. M. Huang contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2015arXiv

Van Hove singularity and ferromagnetic instability in phosphorene

Using Wannier function-based interpolation techniques, we present compelling numerical evidence for the presence of a saddle-point van Hove singularity at the $Γ$ point near the phosphorene Fermi energy. We show that in proximity of the van Hove singularity the spin susceptibility presents the logarithmic temperature dependence typical of Liftshitz phase transitions. Furthermore, we demonstrate that the critical temperature for the ferromagnetic transition can be greatly increased (up to 0.05 K) if strain along the zigzag ridges is applied. Although the ferromagnetic state would be very difficult to experimentally reach, the logarithmic temperature behaviour of the spin susceptibility due to the van Hove singularity is found to persist at much higher temperatures (up to $\sim$97 K).

preprint2009arXiv

Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings

We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.

preprint2007arXiv

Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films

We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln$T$ dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.