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H. Akimoto

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Published work

4 published item(s)

preprint2016arXiv

No Evidence of Intrinsic Optical/Near-Infrared Linear Polarization for V404 Cygni During its Bright Outburst in 2015: Broadband Modeling and Constraint on Jet Parameters

We present simultaneous optical and near-infrared (NIR) polarimetric results for the black hole binary V404 Cygni spanning the duration of its 7-day long optically-brightest phase of its 2015 June outburst. The simultaneous R and Ks-band light curves showed almost the same temporal variation except for the isolated (~30 min duration) orphan Ks-band flare observed at MJD 57193.54. We did not find any significant temporal variation of polarization degree (PD) and position angle (PA) in both R and Ks bands throughout our observations, including the duration of the orphan NIR flare. We show that the observed PD and PA are predominantly interstellar in origin by comparing the V404 Cyg polarimetric results with those of the surrounding sources within the 7'x7' field-of-view. The low intrinsic PD (less than a few percent) implies that the optical and NIR emissions are dominated by either disk or optically-thick synchrotron emission, or both. We also present the broadband spectra of V404 Cyg during the orphan NIR flare and a relatively faint and steady state by including quasi-simultaneous Swift/XRT and INTEGRAL fluxes. By adopting a single-zone synchrotron plus inverse-Compton model as widely used in modeling of blazars, we constrained the parameters of a putative jet. Because the jet synchrotron component cannot exceed the Swift/XRT disk/corona flux, the cutoff Lorentz factor in the electron energy distribution is constrained to be <10^2, suggesting particle acceleration is less efficient in this microquasar jet outburst compared to AGN jets. We also suggest that the loading of the baryon component inside the jet is inevitable based on energetic arguments.

preprint2009arXiv

Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings

We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g-factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.

preprint2008arXiv

Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO$_3$ interface by electric field

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.

preprint2007arXiv

Observation of strong electron dephasing in disordered Cu$_{93}$Ge$_4$Au$_3$ thin films

We report the observation of strong electron dephasing in a series of disordered Cu$_{93}$Ge$_4$Au$_3$ thin films. A very short electron dephasing time possessing very weak temperature dependence around 6 K, followed by an upturn with further decrease in temperature below 4 K, is found. The upturn is progressively more pronounced in more disordered samples. Moreover, a ln$T$ dependent, but high-magnetic-field-insensitive, resistance rise persisting from above 10 K down to 30 mK is observed in the films. These results suggest a nonmagnetic dephasing process which is stronger than any known mechanism and may originate from the coupling of conduction electrons to dynamic defects.