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Researcher profile

S. Wiedmann

S. Wiedmann contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sci

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Published work

10 published item(s)

preprint2022arXiv

Fermi surface and nested magnetic breakdown in WTe2

We report a detailed Shubnikov-de Haas (SdH) study on the Weyl type-II semimetal WTe2 in magnetic fields up to 29 T. By using the SdH results to guide our density functional theory calculations, we are able to accurately determine its Fermi surface by employing a moderate Hubbard U term, which is an essential step in explaining the unusual electronic properties of this much studied material. In addition to the fundamental orbits, we observe magnetic breakdown, which can consistently be explained within the model of a Russian-doll-nested Fermi surface of electron and hole pockets. The onset of magnetic breakdown in WTe2 is solely determined by impurity damping in contrast to magnetic breakdown scenarios in other metallic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determination of the Fermi surface and field-induced quasi-particle tunneling around the Dirac nodal-loop in ZrSiS

Unambiguous and complete determination of the Fermi surface is a primary step in understanding the electronic properties of topical metals and semi-metals, but only in a relatively few cases has this goal been realized. In this work, we present a systematic high-field quantum oscillation study up to 35 T on ZrSiS, a textbook example of a nodal-line semimetal with only linearly dispersive bands crossing the Fermi energy. The topology of the Fermi surface is determined with unprecedented precision and all pockets are identified by comparing the measured angle dependence of the quantum oscillations to density functional theory calculations. Comparison of the Shubnikov-de Haas and de Haas-van Alphen oscillations at low temperatures and analysis of the respective Dingle plots reveal the presence of significantly enhanced scattering on the electron pocket. Above a threshold field that is aligned along the c-axis of the crystal, the specific cage-like Fermi surface of ZrSiS allows for electron-hole tunneling to occur across finite gaps in momentum space leading to quantum oscillations with a complex frequency spectrum. Additional high-frequency quantum oscillations signify magnetic breakdown orbits that encircle the entire Dirac nodal loop. We suggest that the persistence of quantum oscillations in the resistivity to high temperatures is caused by Stark interference between orbits of nearly equal masses.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetoresistance from broken spin helicity

The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also be a powerful probe of electronic and magnetic interactions in matter. For example, magnetoresistance can be used to analyze multiband conductivity, conduction inhomogeneity, localized magnetic moments, and (fractional) Landau level structure. For materials with strong spin-orbit interaction, magnetoresistance can be used as a probe for weak antilocalization or a nontrivial Berry phase, such as in topological insulator surface states. For the three dimensional topological insulators a large and linear magnetoresistance is often used as indication for underlying non-trivial topology, although the origin of this effect has not yet been established. Here, we observe a large magnetoresistance in the conducting bulk state of Bi$_2$Te$_3$. We show that this type of large magnetoresistance is due to the competition between helical spin-momentum locking (i.e. spin rotates with momentum direction) and the unidirectional spin alignment by an applied magnetic field. Warping effects are found to provide the (quasi) linear dependence on magnetic field. We provide a quantitative model for the helicity breaking induced magnetoresistance that can be applied to a vast range of materials, surfaces or interfaces with weak to strong spin-orbit interactions, such as the contemporary oxide interfaces, bulk Rashba systems, and topological insulator surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Evolution of the fermi surface of a doped topological insulator with carrier concentration

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good metal. Nevertheless, it is the most studied system among all the TIs, mainly due to its simple band-structure and large spin-orbit gap. Recently it was shown that copper intercalated Bi2Se3 becomes superconducting and it was suggested as a realization of a topological superconductor (TSC). Here we use a combination of techniques that are sensitive to the shape of the Fermi surface (FS): the Shubnikov-de Haas (SdH) effect and angle resolved photoemission spectroscopy (ARPES) to study the evolution of the FS shape with carrier concentration, n. We find that as n increases, the FS becomes 2D-like. These results are of crucial importance for understanding the superconducting properties of CuxBi2Se3.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interaction phenomena in graphene seen through quantum capacitance

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coexistence of electron and hole transport in graphene

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Non-linear transport phenomena in a two-subband system

We study non-linear transport phenomena in a high-mobility bilayer system with two closely spaced populated electronic subbands in a perpendicular magnetic field. For a moderate direct current excitation, we observe zero-differential-resistance states with a characteristic 1/B periodicity. We investigate, both experimentally and theoretically, the Hall field-induced resistance oscillations which modulate the high-frequency magneto-intersubband oscillations in our system if we increase the current. We also observe and describe the influence of direct current on the magnetoresistance in the presence of microwave irradiation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Crossover between distinct mechanisms of microwave photoresistance in bilayer systems

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Microwave zero-resistance states in a bilayer electron system

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermally activated intersubband scattering and oscillating magnetoresistance in quantum wells

Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed phenomenon is identified as magnetointersubband oscillations caused by the scattering of electrons between two occupied subbands and the third subband which becomes occupied as a result of thermal activation. These small-period oscillations are less sensitive to thermal suppression than the largeperiod magnetointersubband oscillations caused by the scattering between the first and the second subbands. Theoretical study, based on consideration of electron scattering near the edge of the third subband, gives a reasonable explanation of our experimental findings.

0 citations0 reviewsNo code linkedOpen access