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Ivan K. Schuller

Ivan K. Schuller appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-phcond-mat.dis-nncond-mat.otherEmerging TechnologiesNeural and Evolutionary Computing

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Published work

29 published item(s)

preprint2025arXiv

Spin Seebeck Effect in Correlated Antiferromagnetic V2O3

The spin Seebeck effect is useful for probing the spin correlations and magnetic order in magnetic insulators. Here, we report a strong longitudinal spin Seebeck effect (LSSE) in antiferromagnetic V2O3 thin films. The LSSE response at cryogenic temperatures increases as a function of the external magnetic field until it approaches saturation. The response at given power and field exhibits a non-monotonic temperature dependence, with a pronounced peak that shifts toward higher temperatures as the field increases. Furthermore, the magnitude of the LSSE signal decreases consistently with increasing thickness, implying that the bulk SSE dominates any interfacial contribution. This negative correlation between the SSE and the thickness implies that the magnon energy relaxation length in V2O3 is shorter than the thickness of our thinnest film, 50 nm, consistent with the strong spin-lattice coupling in this material.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Correlative mapping of local hysteresis properties in VO$_2$

We have developed a new optical microscopy technique able to track micron-sized surface clusters as temperature is varied. Potential candidates for study include phase separated metal-insulator materials, ferroelectrics, and porous structures. Several key techniques (including autofocus, step motor/cross correlation alignments, single-pixel thresholding, pair connectivity correlation length and image convolution) were implemented in order to obtain a time series of thresholded images. Here, we apply this new method to probe the archetypal phase separated insulator-metal transition in VO$_2$. A precise time and temperature series of the insulator-metal transition was achieved, allowing us to construct for the first time in this material spatial maps of the transition temperature T$_c$. These maps reveal multiple interesting features such as fractal electronic patterns on micron scales, regions of the sample with an extremely large or nearly absent local hysteresis, a positive correlation between the T$_c$ value and the hysteresis width $Δ$T$_c$, and high cycle-to-cycle reproducibility of the transition. These maps also allow for the identification of individual pixels with unique transition characteristics. This unprecedented knowledge of the local properties of each spot along with the behavior of the entire network paves the way to novel electronics applications enabled by, {\em e.g.}, addressing specific regions with desired memory and/or switching characteristics, as well as detailed explorations of open questions in the theory of hysteresis.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Direct visualization of percolating metal-insulator transition in V2O3 using scanning microwave impedance microscopy

Using the extensively studied V2O3 as a prototype system, we investigate the role of percolation in metal-insulator transition (MIT). We apply scanning microwave impedance microscopy to directly determine the metallic phase fraction p and relate it to the macroscopic conductance G, which shows a sudden jump when p reaches the percolation threshold. Interestingly, the conductance G exhibits a hysteretic behavior against p, suggesting two different percolating processes upon cooling and warming. Based on our image analysis and model simulation, we ascribe such hysteretic behavior to different domain nucleation and growth processes between cooling and warming, which is likely caused by the decoupled structural and electronic transitions in V2O3 during MIT. Our work provides a microscopic view of how the interplay of structural and electronic degrees of freedom affects MIT in strongly correlated systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum materials for energy-efficient neuromorphic computing

Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tuning spin-orbit torques across the phase transition in VO$_2$/NiFe heterostructure

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques in VO$_2$/NiFe heterostructures were investigated using spin-torque ferromagnetic resonance, where the VO$_2$ layer undergoes a prominent insulator-metal transition. A roughly two-fold increase in the Gilbert damping parameter, $α$, with temperature was attributed to the change in the VO$_2$/NiFe interface spin absorption across the VO$_2$ phase transition. More remarkably, a large modulation ($\pm$100%) and a sign change of the current-induced spin-orbit torque across the VO$_2$ phase transition suggest two competing spin-orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO$_2$, corroborated by our first-principles calculation of spin Hall conductivity, $σ_{SH} \approx 10^4 \frac{\hbar}{e} Ω^{-1} m^{-1}$, is verified as the main source of the spin-orbit torque in the metallic phase. The self-induced/anomalous torque in NiFe, of the opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO$_2$, could be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin-orbit torques of materials which undergo phase transitions for new device functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers

We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromagnetic resonance measurements show that this change in magnetic anisotropy is reversible with temperature. We identify two structural properties of the V$_2$O$_3$/Ni bilayers affecting the in-plane magnetic anisotropy: (1) a growth-induced uniaxial magnetic anisotropy associated with step-like terraces in the bilayer microstructure and (2) a low-temperature strain-induced biaxial anisotropy associated with the V$_2$O$_3$ structural phase transition. Magnetoresistance measurements corroborate the change in magnetic anisotropy across the structural transition and suggest that the negative magnetostriction of Ni leads to the emergence of a strain-induced easy-axis. This shows that a temperature-dependent structural transition in V$_2$O$_3$ may be used to tune the magnetic anisotropy in an adjacent ferromagnetic thin film.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Non-Thermal Resistive Switching in Mott Insulators

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a doping driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater

Despite decades of experimental and theoretical efforts, the origin of metal-insulator transitions (MIT) in strongly-correlated materials is one of the main longstanding problems in condensed matter physics. An archetypal example is V2O3, where electronic, structural and magnetic phase transitions occur simultaneously. This remarkable concomitance makes the understanding of the origin of the MIT a challenge due to the many degrees of freedom at play. In this work, we demonstrate that magnetism plays the key dominant role. By acting on the magnetic degree of freedom, we reveal an anomalous behaviour of the magnetoresistance of V2O3, which provides strong evidence that the origin of the MIT in V2O3 is the opening of an antiferromagnetic gap in the presence of strong electronic correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Search for New Superconductors: An Electro-Magnetic Phase Transition in an Iron Meteorite Inclusion at 117 K

The discovery of superconductivity in pnictides and iron chalcogenides inspires the search for new iron based superconducting phases. Iron-rich meteorites present a unique opportunity for this search, because they contain a broad range of compounds produced under extreme growth conditions. We investigated a natural iron sulfide based materials (Troilite) inclusion with its associated minerals in the iron meteorite Tlacotepec. Tlacotepec formed in an asteroidal core under high pressure and at high temperature over millions of years, while insoluble sulfur rich materials segregated into inclusions during cooling along with included minerals. The search for superconductivity in these heterogeneous materials requires a technique capable of detecting minute amounts of a superconducting phase embedded in a non-superconducting matrix. We used Magnetic Field Modulated Microwave Spectroscopy (MFMMS), a very sensitive, selective, and non-destructive technique, to search for superconductivity in heterogeneous systems. Here, we report the observation of an electro-magnetic phase transition at 117 K that causes a MFMMS-response typical of a superconductor. A pronounced and reproducible peak together with isothermal magnetic field sweeps prove the appearance of a new electromagnetic phase below 117 K. This is very similar to the characteristic response due to flux trapping in a granular superconductor with a short coherence length. Although the compound responsible for the peak in the MFMMS-spectra was not identified, it is possibly an iron sulfide based phase, or another material heterogeneously distributed over the inclusion.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dynamic conductivity scaling in photoexcited V2O3 thin films

Optical-pump terahertz-probe spectroscopy is used to investigate ultrafast far-infrared conductivity dynamics during the insulator-to-metal transition (IMT) in vanadium sesquioxide (V2O3). The resultant conductivity increase occurs on a tens of ps timescale, exhibiting a strong dependence on the initial temperature and fluence. We have identified a scaling of the conductivity dynamics upon renormalizing the time axis with a simple power law (alpha = 1/2) that depends solely on the initial, final, and conductivity onset temperatures. Qualitative and quantitative considerations indicate that the dynamics arise from nucleation and growth of the metallic phase which can be described by the Avrami model. We show that the temporal scaling arises from spatial scaling of the growth of the metallic volume fraction, highlighting the self-similar nature of the dynamics. Our results illustrate the important role played by mesoscopic effects in phase transition dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Resolving transitions in the mesoscale domain configuration in VO$_2$ using laser speckle pattern analysis

The configuration and evolution of coexisting mesoscopic domains with contrasting material properties are critical in creating novel functionality through emergent physical properties. However, current approaches that map the domain structure involve either spatially resolved but protracted scanning probe experiments without real time information on the domain evolution, or time resolved spectroscopic experiments lacking domain-scale spatial resolution. We demonstrate an elegant experimental technique that bridges these local and global methods, giving access to mesoscale information on domain formation and evolution at time scales orders of magnitude faster than current spatially resolved approaches. Our straightforward analysis of laser speckle patterns across the first order phase transition of VO$_2$ can be generalized to other systems with large scale phase separation and has potential as a powerful method with both spatial and temporal resolution to study phase separation in complex materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Vortex pinning vs superconducting wire network: origin of periodic oscillations induced by applied magnetic fields in superconducting films with arrays of nanomagnets

Hybrid magnetic arrays embedded in superconducting films are ideal systems to study the competition between different physical (such as the coherence length) and structural length scales such as available in artificially produced structures. This interplay leads to oscillation in many magnetically dependent superconducting properties such as the critical currents, resistivity and magnetization. These effects are generally analyzed using two distinct models based on vortex pinning or wire network. In this work, we show that for magnetic dot arrays, as opposed to antidot (i.e holes) arrays, vortex pinning is the main mechanism for field induced oscillations in resistance R(H), critical current Ic(H), magnetization M(H) and ac-susceptibility Xac(H) in a broad temperature range. Due to the coherence length divergence at Tc, a crossover to wire network behavior is experimentally found. While pinning occurs in a wide temperature range up to Tc, wire network behavior is only present in a very narrow temperature window close to Tc. In this temperature interval, contributions from both mechanisms are operational but can be experimentally distinguished.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Correlation Dynamics and Enhanced Signals for Serial DNA Sequencing

Nanopore based sequencing has demonstrated significant potential for the development of fast, accurate, and cost-efficient fingerprinting techniques for next generation molecular detection and sequencing. We propose a specific multi-layered graphene-based nanopore device architecture for the recognition of single DNA bases. Molecular detection and analysis can be accomplished through the detection of transverse currents as the molecule or DNA base translocates through the nanopore. To increase the overall signal-to-noise ratio and the accuracy, we implement a new "multi-point cross-correlation" technique for identification of DNA bases or other molecules on the molecular level. We demonstrate that the cross-correlations between each nanopore will greatly enhance the transverse current signal for each molecule. We implement first-principles transport calculations for DNA bases surveyed across a multi-layered graphene nanopore system to illustrate the advantages of proposed geometry. A time-series analysis of the cross-correlation functions illustrates the potential of this method for enhancing the signal-to-noise ratio. This work constitutes a significant step forward in facilitating fingerprinting of single biomolecules using solid state technology.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Highly Effective Superconducting Vortex Pinning in Conformal Crystals

We have investigated the vortex dynamics in superconducting thin film devices with non-uniform patterns of artificial pinning centers (APCs). The magneto-transport properties of a conformal crystal and a randomly diluted APC pattern are compared with that of a triangular reference lattice. We have found that in both cases the magneto-resistance below the first matching field of the triangular reference lattice is significantly reduced. For the conformal crystal, the magneto-resistance is below the noise floor indicating highly effective vortex pinning over a wide magnetic field range. Further, we have discovered that for asymmetric patterns the R vs. H curves are mostly symmetric.This implies that the enhanced vortex pinning is due to the commensurability with a stripe in the non-uniform APC pattern and not due to a rearrangement and compression of the whole vortex lattice.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Deconvoluting Reversal Modes in Exchange Biased Nanodots

Ensemble-averaged exchange bias in arrays of Fe/FeF2 nanodots has been deconvoluted into local, microscopic, bias separately experienced by nanodots going through different reversal modes. The relative fraction of dots in each mode can be modified by exchange bias. Single domain dots exhibit a simple loop shift, while vortex state dots have asymmetric shifts in the vortex nucleation and annihilation fields, manifesting local incomplete domain walls in these nanodots as magnetic vortices with tilted cores.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition

We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant voltage progression for high currents indicate an electrical breakdown of the device. In addition, the IV curve shows hysteresis and a training effect, i.e. the subsequent IV loops are different from the first IV loop after thermal cycling. Low temperature scanning electron microscopy (LTSEM) reveals that the electrical breakdown over the whole device is caused by the formation of electro-thermal domains (ETDs), i.e. the current and temperature redistribution in the device. On the contrary, at the nanoscale, the electrical breakdown causes the IMT of individual domains. In a numerical model we considered these domains as a network of resistors and we were able to reproduce the electro-thermal breakdown as well as the hysteresis and the training effect in the IVs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Exchange Bias Induced by the Fe3O4 Verwey transition

We present a study of the exchange bias in different configurations of V2O3 thin films with ferromagnetic layers. The exchange bias is accompanied by a large vertical shift in the magnetization. These effects are only observed when V2O3 is grown on top of Ni80Fe20 permalloy. The magnitude of the vertical shift is as large as 60% of the total magnetization which has never been reported in any system. X-Ray diffraction studies show that the growth conditions promote the formation of a ferrimagnetic Fe3O4 interlayer. The change in the easy magnetization axis of Fe3O4 across the Verwey transition at 120 K is correlated with the appearance of exchange bias and vertical shift in magnetization. Both phenomena disappear above 120 K, indicating for the first time a direct relationship between the magnetic signature of the Verwey transition and exchange bias.

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preprint2012arXiv

Temperature dependence of in-plane correlation lengths in exchange biased Co/FeF2

We have measured resonant soft x-ray diffuse magnetic scattering as a function of temperature in a positively exchange biased Co/FeF2 bilayer and analyzed the data in the distorted wave Born approximation to obtain in-plane charge and magnetic correlation lengths associated with the Co and FeF2 layers and estimate interfacial roughness. Tuning to the Fe and Co L3 edges reveals significantly different temperature trends in these quantities in the antiferromagnetic and ferromagnetic layers, respectively. While the magnetic correlation length of the uncompensated interfacial spins in FeF2 layer increase as temperature decreases, these quantities remain unchanged in the Co layer. Our results indicate that uncompensated Fe spins order within a range of few hundred nanometers in otherwise randomly distributed uncompensated magnetic moments, giving rise to spin clusters in the antiferromagnet whose size increase as the temperature decrease.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Asymmetric magnetic dots: A way to control magnetic properties

We have used Monte Carlo simulations to investigate the magnetic properties of asymmetric dots as a function of their geometry. The asymmetry of round dots is produced by cutting off a fraction of the dot and is characterized by an asymmetry parameter $α$. This shape asymmetry has interesting effects on the coercivity ($H_{c}$), remanence ($M_{r}$), and barrier for vortex and C- state formation. The dependences of $H_{c}$ and $M_{r}$ are non monotonic as a function of $α$ with a well defined minima in these parameters. The vortex enters the most asymmetric part and exits through the symmetric portion of the dot. With increasing $α$ the vortex formation starts with a C-state which persists for longer fields and the barrier for vortex exit diminishes with increasing asymmetry, thus providing control over the magnetic chirality. This implies interesting, naively-unexpected, magnetic behavior as a function of geometry and magnetic field.

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preprint2011arXiv

Controllable manipulation of superconductivity using magnetic vortices

The magneto-transport of a superconducting/ferromagnetic hybrid structure consisting of a superconducting thin film in contact with an array of magnetic nanodots in the so-called "magnetic vortex-state" exhibits interesting properties. For certain magnetic states, the stray magnetic field from the vortex array is intense enough to drive the superconducting film into the normal state. In this fashion, the normal-to-superconducting phase transition can be controlled by the magnetic history. The strong coupling between superconducting and magnetic subsystems allows characteristically ferromagnetic properties, such as hysteresis and remanence, to be dramatically transferred into the transport properties of the superconductor.

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preprint2011arXiv

Evidence for a capacitor network near the metal insulator transition in VO2 thin films probed by in-plane impedance spectroscopy

Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator transition (MIT). A non ideal RC behavior was found in our films from room temperature up to 334 K. A decrease of the total capacitance was found in this region, possibly due to interface effects. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately. Around the MIT, an increase of the total capacitance is observed.

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preprint2011arXiv

Upper limit to magnetism in LaAlO3/SrTiO3 heterostructures

Using polarized neutron reflectometry (PNR) we measured the neutron spin dependent reflectivity from four LaAlO3/SrTiO3 superlattices. This experiment implies that the upper limit for the magnetization induced by an 11 T magnetic field at 1.7 K is 2 emu/cm3. SQUID magnetometry of the superlattices sporadically finds an enhanced moment, possibly due to experimental artifacts. These observations set important restrictions on theories which imply a strongly enhanced magnetism at the interface between LaAlO3 and SrTiO3.

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preprint2011arXiv

Vortex ratchet reversal: The role of interstitial vortices

Triangular arrays of Ni nanotriangles embedded in superconducting Nb films exhibit unexpected dynamical vortex effects. Collective pinning with a vortex lattice configuration different from the expected fundamental triangular "Abrikosov state" is found. The vortex motion which prevails against the triangular periodic potential is produced by channelling effects between triangles. Interstitial vortices coexisting with pinned vortices in this asymmetric potential, lead to ratchet reversal, i.e. a DC output voltage which changes sign with the amplitude of an applied alternating drive current. In this landscape, ratchet reversal is always observed at all magnetic fields (all numbers of vortices) and at different temperatures. The ratchet reversal is unambiguously connected to the presence of two locations for the vortices: interstitial and above the artificial pinning sites.

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preprint2009arXiv

Enhanced spin-flip scattering at the surface of copper in lateral spin valves

We performed non-local electrical measurements of a series of Py/Cu lateral spin valve devices with different Cu thicknesses. We show that both the spin diffusion length of Cu and the apparent spin polarization of Py increase with Cu thickness. By fitting the results to a modified spin-diffusion model, we show that the spin diffusion length of Cu is dominated by spin-flip scattering at the surface. In addition, the dependence of spin polarization of Py on Cu thickness is due to a strong spin-flip scattering at the Py/Cu interface.

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preprint2008arXiv

Switchable collective pinning of flux quanta using magnetic vortex arrays

We constructed a superconducting/ferromagnetic hybrid system in which the ordering of the pinning potential landscape for flux quanta can be manipulated. Flux pinning is induced by an array of magnetic nanodots in the magnetic vortex state, and controlled by the magnetic history. This allows switching on and off the collective pinning of the flux-lattice. In addition, we observed field-induced superconductivity that originates from the annihilation of flux quanta induced by the stray fields from the magnetic vortices.

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preprint2005arXiv

Asymmetric magnetization reversal in the exchange bias system Fe/FeF_2 studied by MOKE

The asymmetry of the magnetization reversal process in exchange biased Fe/FeF$_2$ has been studied by magneto-optical Kerr effect. Qualitatively different transverse magnetization loops are observed for different directions of the cooling and the measuring field. These loops can be simulated by a simple calculation of the total energy density which includes the relevant magnetic anisotropies and coherent magnetization rotation only. Asymmetric magnetization reversal is shown to originate from the unidirectional anisotropy and may be observed if the external measuring field is not collinear with either the exchange bias or the easy axis of the antiferromagnetic epitaxial FeF$_2$(110) layer.

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preprint2005arXiv

Magneto-optical study of magnetization reversal asymmetry in exchange bias

The asymmetric magnetization reversal in exchange biased Fe/MnF$_{2}$ involves coherent (Stoner-Wohlfarth) magnetization rotation into an intermediate, stable state perpendicular to the applied field. We provide here experimentally tested analytical conditions for the unambiguous observation of both longitudinal and transverse magnetization components using the magneto-optical Kerr effect. This provides a fast and powerful probe of coherent magnetization reversal as well as its chirality. Surprisingly, the sign and asymmetry of the transverse magnetization component of Fe/MnF$_{2}$ change with the angle between cooling and measurement fields.

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