Researcher profile

Pavel Salev

Pavel Salev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2023arXiv

Correlative mapping of local hysteresis properties in VO$_2$

We have developed a new optical microscopy technique able to track micron-sized surface clusters as temperature is varied. Potential candidates for study include phase separated metal-insulator materials, ferroelectrics, and porous structures. Several key techniques (including autofocus, step motor/cross correlation alignments, single-pixel thresholding, pair connectivity correlation length and image convolution) were implemented in order to obtain a time series of thresholded images. Here, we apply this new method to probe the archetypal phase separated insulator-metal transition in VO$_2$. A precise time and temperature series of the insulator-metal transition was achieved, allowing us to construct for the first time in this material spatial maps of the transition temperature T$_c$. These maps reveal multiple interesting features such as fractal electronic patterns on micron scales, regions of the sample with an extremely large or nearly absent local hysteresis, a positive correlation between the T$_c$ value and the hysteresis width $Δ$T$_c$, and high cycle-to-cycle reproducibility of the transition. These maps also allow for the identification of individual pixels with unique transition characteristics. This unprecedented knowledge of the local properties of each spot along with the behavior of the entire network paves the way to novel electronics applications enabled by, {\em e.g.}, addressing specific regions with desired memory and/or switching characteristics, as well as detailed explorations of open questions in the theory of hysteresis.

preprint2022arXiv

Tuning spin-orbit torques across the phase transition in VO$_2$/NiFe heterostructure

The emergence of spin-orbit torques as a promising approach to energy-efficient magnetic switching has generated large interest in material systems with easily and fully tunable spin-orbit torques. Here, current-induced spin-orbit torques in VO$_2$/NiFe heterostructures were investigated using spin-torque ferromagnetic resonance, where the VO$_2$ layer undergoes a prominent insulator-metal transition. A roughly two-fold increase in the Gilbert damping parameter, $α$, with temperature was attributed to the change in the VO$_2$/NiFe interface spin absorption across the VO$_2$ phase transition. More remarkably, a large modulation ($\pm$100%) and a sign change of the current-induced spin-orbit torque across the VO$_2$ phase transition suggest two competing spin-orbit torque generating mechanisms. The bulk spin Hall effect in metallic VO$_2$, corroborated by our first-principles calculation of spin Hall conductivity, $σ_{SH} \approx 10^4 \frac{\hbar}{e} Ω^{-1} m^{-1}$, is verified as the main source of the spin-orbit torque in the metallic phase. The self-induced/anomalous torque in NiFe, of the opposite sign and a similar magnitude to the bulk spin Hall effect in metallic VO$_2$, could be the other competing mechanism that dominates as temperature decreases. For applications, the strong tunability of the torque strength and direction opens a new route to tailor spin-orbit torques of materials which undergo phase transitions for new device functionalities.

preprint2021arXiv

Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers

We report on a temperature-driven reversible change of the in-plane magnetic anisotropy of V$_2$O$_3$/Ni bilayers. This is caused by the rhombohedral to monoclinic structural phase transition of V$_2$O$_3$ at $T_C$ = 160 K. The in-plane magnetic anisotropy is uniaxial above $T_C$, but as the bilayer is cooled through the structural phase transition, a secondary magnetic easy axis emerges. Ferromagnetic resonance measurements show that this change in magnetic anisotropy is reversible with temperature. We identify two structural properties of the V$_2$O$_3$/Ni bilayers affecting the in-plane magnetic anisotropy: (1) a growth-induced uniaxial magnetic anisotropy associated with step-like terraces in the bilayer microstructure and (2) a low-temperature strain-induced biaxial anisotropy associated with the V$_2$O$_3$ structural phase transition. Magnetoresistance measurements corroborate the change in magnetic anisotropy across the structural transition and suggest that the negative magnetostriction of Ni leads to the emergence of a strain-induced easy-axis. This shows that a temperature-dependent structural transition in V$_2$O$_3$ may be used to tune the magnetic anisotropy in an adjacent ferromagnetic thin film.

preprint2020arXiv

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations.

preprint2019arXiv

Non-Thermal Resistive Switching in Mott Insulators

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a doping driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.