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Yoav Kalcheim

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cond-mat.supr-con cond-mat.mtrl-sci cond-mat.str-el cond-mat.mes-hall physics.app-ph quant-ph

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preprint2023arXiv

Coupled pyroelectric-photovoltaic effect in 2D ferroelectric $α$-In$_2$Se$_3$

Pyroelectric and photovoltaic effects are vital in cutting-edge thermal imaging, infrared sensors, thermal and solar energy harvesting. Recent advances revealed the great potential of the bulk photovoltaic effect in two-dimensional (2D) semiconductor-ferroelectric materials to enable reconfigurable p-n junction operation with the potential to surpass the Shockley-Queiseer limit. Moreover, the extremely low thickness, high thermal conductivity, dangling bonds free interface, and room-temperature stable ferroelectricity down to a single monolayer endow 2D ferroelectrics with a superior pyroelectric figure of merit. Herein, we performed direct pyroelectric measurements of 2D $α$-In$_2$Se$_3$ under dark and light conditions. The results reveal a gigantic pyroelectric coefficient of 30.7 mC/m$^2$K and a figure of merit of 135.9 m$^2$/C. In addition, we perform temperature-dependent short-circuit photovoltaic response measurements in which the excess photocurrent is modulated in proportion with the temperature variations due to the induced in-plane potential variations. Consequently, the discovered pyroelectric-photovoltaic effect allows the combination of direct temperature (photovoltaic) and temperature-derivative (pyroelectric) sensing. Finally, we utilized the intercoupled ferroelectricity of In$_2$Se$_3$ to realize a non-volatile, self-powered photovoltaic memory operation, demonstrating a stable short-circuit current switching with a decent 103 ON-OFF ratio. The coupled pyroelectric-photovoltaic effect, along with reconfigurable photocurrent, pave the way for a novel monolithic device technology with integrated thermal and optical response, in-memory logic and energy harvesting.

preprint2022arXiv

Direct visualization of percolating metal-insulator transition in V2O3 using scanning microwave impedance microscopy

Using the extensively studied V2O3 as a prototype system, we investigate the role of percolation in metal-insulator transition (MIT). We apply scanning microwave impedance microscopy to directly determine the metallic phase fraction p and relate it to the macroscopic conductance G, which shows a sudden jump when p reaches the percolation threshold. Interestingly, the conductance G exhibits a hysteretic behavior against p, suggesting two different percolating processes upon cooling and warming. Based on our image analysis and model simulation, we ascribe such hysteretic behavior to different domain nucleation and growth processes between cooling and warming, which is likely caused by the decoupled structural and electronic transitions in V2O3 during MIT. Our work provides a microscopic view of how the interplay of structural and electronic degrees of freedom affects MIT in strongly correlated systems.

preprint2022arXiv

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level.

preprint2020arXiv

Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature

Resistive switching is one of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V3O5, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition (IMT) above room temperature (Tc ~ 415 K). Here we demonstrate both static dc resistive switching (RS) and fast oscillatory spiking regimes in V3O5 devices at room temperature (120 K below the phase transition temperature) by applying an electric field. We use operando optical imaging to track a reflectivity change during the RS and find that a percolating high temperature metallic phase filament is formed. This demonstrates that the electrically induced RS triggers the phase transition. Furthermore, we optically capture the spiking oscillations that we link to the negative differential resistance regime and find the filament forms and dissolves via a periodic spatio-temporal instability that we describe by numerical simulations.

preprint2019arXiv

Non-Thermal Resistive Switching in Mott Insulators

Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. We resolve this issue by studying nanowires of two archetypical Mott insulators - VO2 and V2O3. Our findings show a crossover between two qualitatively different regimes. In one, the IMT is driven by Joule heating to the transition temperature, while in the other, field-assisted carrier generation gives rise to a doping driven IMT which is purely non-thermal. By identifying the key material properties governing these phenomena, we propose a universal mechanism for resistive switching in Mott insulators. This understanding enabled us to control the switching mechanism using focused ion-beam irradiation, thereby facilitating an electrically driven non-thermal IMT. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state of the art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.

preprint2015arXiv

Inverse proximity effect at superconductor-ferromagnet interfaces: Evidence for induced triplet pairing in the superconductor

Considerable evidence for proximity-induced triplet superconductivity on the ferromagnetic side of a superconductor-ferromagnet (S-F) interface now exists; however, the corresponding effect on the superconductor side has hardly been addressed. We have performed scanning tunneling spectroscopy measurements on NbN superconducting thin films proximity coupled to the half-metallic ferromagnet La2/3Ca1/3MnO3 (LCMO) as a function of magnetic field. We have found that at zero and low applied magnetic fields the tunneling spectra on NbN typically show an anomalous gap structure with suppressed coherence peaks and, in some cases, a zero-bias conductance peak. As the field increases to the magnetic saturation of LCMO where the magnetization is homogeneous, the spectra become more BCS-like and the critical temperature of the NbN increases, implying a reduced proximity effect. Our results therefore suggest that triplet-pairing correlations are also induced in the S side of an S-F bilayer.

preprint2013arXiv

Signature of proximity induced triplet superconductivity in junctions made of the doped topological insulator $\rm Bi_2Se_3$ and the s-wave superconductor NbN

Thin film junctions and bilayers of the doped topological insulator $\rm Bi_2Se_3$ and the s-wave superconductor NbN were found to exhibit conductance spectra with prominent zero bias and coherence peaks. Various tunneling models with different pair potentials have failed to fit our data, except for the triplet $p_x+ip_y$ pair potential, which breaks time reversal symmetry, but yielded reasonably good fits. This provides evidence for proximity induced triplet superconductivity in the $\rm Bi_2Se_3$ layer near the interface with the NbN film.

preprint2011arXiv

Increased superconducting transition temperature of a niobium thin-film proximity-coupled to gold nanoparticles using linking organic molecules

The superconducting critical temperature, TC, of thin Nb films is significantly modified when gold nanoparticles (NPs) are chemically linked to the Nb film, with a consistent enhancement when using 3 nm long disilane linker molecules. The TC increases by up to 10% for certain linker length and NPs size. No change is observed when the nanoparticles are physisorbed with non-linking molecules. Electron tunneling spectra acquired on the linked NPs below TC typically exhibit zero-bias peaks. We attribute these results to a pairing mechanism coupling electrons in the Nb and the NPs, mediated by the organic linkers.

preprint2010arXiv

Long range proximity effect in La2/3Ca1/3MnO3 (LCMO)/(100)YBa2Cu3O7-delta (YBCO) ferromagnet/superconductor bilayers: Evidence for induced triplet superconductivity in the ferromagnet

Scanning tunneling spectroscopy measurements conducted on epitaxially grown bilayers of half-metallic ferromagnetic La2/3Ca1/3MnO3 (LCMO) on superconducting (SC) (100)YBa2Cu3O7-delta (YBCO) reveal long-range penetration of superconducting order into the LCMO. This anomalous proximity effect manifests itself in the tunneling spectra measured on the LCMO layer as gaps and zero bias conductance peaks. Remarkably, these proximity-induced spectral features were observed for bilayers with LCMO thickness of up to 30 nm, an order of magnitude larger than the expected ferromagnetic coherence length in LCMO. We argue that this long-range proximity effect can be accounted for by the formation of spin triplet pairing at the LCMO side of the bilayer due to magnetic inhomogeneity at the interface or at domain walls. Possible symmetries of the induced order parameter are discussed.