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Researcher profile

Imran Khan

Imran Khan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciComputation and Languagecond-mat.mes-hallcond-mat.quant-gasphysics.app-phphysics.ins-detquant-ph

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Published work

6 published item(s)

preprint2021arXiv

Sentiment Analysis of Users' Reviews on COVID-19 Contact Tracing Apps with a Benchmark Dataset

Contact tracing has been globally adopted in the fight to control the infection rate of COVID-19. Thanks to digital technologies, such as smartphones and wearable devices, contacts of COVID-19 patients can be easily traced and informed about their potential exposure to the virus. To this aim, several interesting mobile applications have been developed. However, there are ever-growing concerns over the working mechanism and performance of these applications. The literature already provides some interesting exploratory studies on the community's response to the applications by analyzing information from different sources, such as news and users' reviews of the applications. However, to the best of our knowledge, there is no existing solution that automatically analyzes users' reviews and extracts the evoked sentiments. In this work, we propose a pipeline starting from manual annotation via a crowd-sourcing study and concluding on the development and training of AI models for automatic sentiment analysis of users' reviews. In total, we employ eight different methods achieving up to an average F1-Scores 94.8% indicating the feasibility of automatic sentiment analysis of users' reviews on the COVID-19 contact tracing applications. We also highlight the key advantages, drawbacks, and users' concerns over the applications. Moreover, we also collect and annotate a large-scale dataset composed of 34,534 reviews manually annotated from the contract tracing applications of 46 distinct countries. The presented analysis and the dataset are expected to provide a baseline/benchmark for future research in the domain.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Finite state machine controls for a source of optical squeezed vacuum

In this paper we present a software, developed in the distributed control system environment of the Virgo gravitational-wave detector, for the management of a highly automated optical bench. The bench is extensively used for the research and development of squeezed states of light generation in order to mitigate the quantum noise in the next generations of interferometric gravitational-wave detectors. The software is developed using Finite-State Machines, recently implemented as a new feature of damping-adv Software Development Kit. It has been studied for its ease of use and stability of operation and thus offers a high duty-cycle of operation. Much attention has been drawn to ensure the software scalability and integration with the existing Data AcQuisition and control infrastructure of the Virgo detector.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Growth and Characterization of Homoepitaxial $β$-Ga$_2$O$_3$ Layers

$β$-Ga$_2$O$_3$ is a next-generation ultra wide bandgap semiconductor (E$_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial $β$-Ga$_2$O$_3$ layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of $\sim$1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by $J-V$ and $C-V$ measurements, revealing an unintentional doping density of 4.3 $\times$ 10$^{16}$ cm$^{-3}$ - 2 $\times$ 10$^{17}$ cm$^{-3}$ in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the $β$-Ga$_2$O$_3$ homoepitaxial layers used in power electronic and other devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectrum of Landau Levels in GaAs Quantum Wells

We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. This device had excess n type doping and as a result. The quantum wells were populated by a two dimension Landau electron gas. The broad B0 field emission band evolved into a series of discrete features in the presence of a magnetic field. These were identified as interband transitions between the different values of l. Landau levels associated with the sub-bands, with the selection rule. An energy splitting between the two polarised components was observed for each Landau level transition. This was found to be equal to the sum of the conduction and valence band spin splittings. We used the know value of electron g factor to determine the valence band spin splittings. Our experimental values were compared to the numerically calculated values and were found to be in reasonable agreement.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Towards Integrating True Random Number Generation in Coherent Optical Transceivers

The integration of quantum communication functions often requires dedicated opto-electronic components that do not bode well with the technology roadmaps of telecom systems. We investigate the capability of commercial coherent transceiver sub-systems to support quantum random number generation next to classical data transmission, and demonstrate how the quantum entropy source based on vacuum fluctuations can be potentially converted into a true random number generator for this purpose. We discuss two possible implementations, building on a receiver- and a transmitter-centric architecture. In the first scheme, balanced homodyne broadband detection in a coherent intradyne receiver is exploited to measure the vacuum state at the input of a 90-degree hybrid. In our proof-of-principle demonstration, a clearance of >2 dB between optical and electrical noise is obtained over a wide bandwidth of more than 11 GHz. In the second scheme, we propose and evaluate the re-use of monitoring photodiodes of a polarization-multiplexed inphase/quadrature modulator for the same purpose. Time-interleaved random number generation is demonstrated for 10 Gbaud polarization-multiplexed quadrature phase shift keyed data transmission. The availability of detailed models will allow to calculate the extractable entropy and we accordingly show randomness extraction for our two proof-of-principle experiments, employing a two-universal strong extractor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Wide band gap chalcogenide semiconductors

Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as ITO and IGZO used in displays, carbides and nitrides used in power electronics, as well as emerging halides (e.g. CuI) and 2D electronic materials used in various optoelectronic devices. Chalcogen-based (S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for p-type doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors. We proceed to summarize progress in wide band gap (Eg > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh2 chalcopyrites, Cu3MCh4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access