BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Igor Aharonovich

Igor Aharonovich appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-sciphysics.opticsquant-phphysics.app-phcond-mat.mes-hallBiological PhysicsBiomoleculescs.CYphysics.atom-phphysics.ins-detphysics.soc-ph

Catalog footprint

What is connected

70works
11topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

70 published item(s)

preprint2026arXiv

Deterministic integration of quantum emitters and optical cavities in a van der Waals crystal

Single-photon emitters in hexagonal boron nitride (hBN) combine bright optical emission with optically addressable spin states, offering a promising platform for integrated quantum photonics. However, their stochastic creation and spectral variability have prevented deterministic integration with photonic cavities. Here we demonstrate a fabrication protocol that enables precise, deterministic coupling of pre-selected visible emitters to circular Bragg grating (CBG) cavities in hBN. By patterning etched alignment markers and performing prefabrication confocal mapping, we locate emitters with sub-micron accuracy and design cavity geometries matched to their zero-phonon line wavelengths. The resulting devices show enhanced emission and reliable spectral alignment between emitter and cavity mode. This work establishes a deterministic cavity-emitter integration scheme in a van der Waals material and provides a scalable route towards on-chip quantum photonic and spin-based platforms using hBN.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Photophysics of blue quantum emitters in hexagonal Boron Nitride

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation

Two dimensional materials are becoming increasingly popular as a platform for studies of quantum phenomena and for the production of prototype quantum technologies. Quantum emitters in 2D materials can host two level systems that can act as qubits for quantum information processing. Here, we characterize the behavior of position-controlled quantum emitters in hexagonal boron nitride at cryogenic temperatures. Over two dozen sites, we observe an ultra-narrow distribution of the zero phonon line at ~436 nm, together with strong linearly polarized emission. We employ resonant excitation to characterize the emission lineshape and find spectral diffusion and phonon broadening contribute to linewidths in the range 1-2 GHz. Rabi oscillations are observed at a range of resonant excitation powers, and under 1 $μ$W excitation a coherent superposition is maintained up to 0.90 ns. Our results are promising for future employment of quantum emitters in hBN for scalable quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coupling Spin Defects in Hexagonal Boron Nitride to Titanium Oxide Ring Resonators

Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled boron vacancy showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Integrated Room Temperature Single Photon Source for Quantum Key Distribution

High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Monolithic Silicon Carbide Metalenses

Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable for on-chip optical operations. We engineer two distinct lenses, with parabolic and cubic phase profiles, operating in the near infrared spectral range, which is of interest for quantum and photonic applications. We support the lens fabrication by optical transmission measurement and characterize the focal points of the lenses. Our results will accelerate the development of SiC nanophotonic devices and aid in an on chip integration of quantum emitters with meta-optical components.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum interference of resonance fluorescence from Germanium-vacancy color centers in diamond

Resonance fluorescence from a quantum emitter is an ideal source to extract indistinguishable photons. By using the cross polarization to suppress the laser scattering, we observed resonance fluorescence from GeV color centers in diamond at cryogenic temperature. The Fourier-transform-limited linewidth emission with $T_2/2T_1\sim0.86$ allows for two-photon interference based on single GeV color center. Under pulsed excitation, the 24 ns separated photons exhibit a Hong-Ou-Mandel visibility of $0.604\pm0.022$, while the continuous-wave excitation leads to a coalescence time window of 1.05 radiative lifetime. Together with single-shot readout of spin states, it paves the way towards building a quantum network with GeV color centers in diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Stark effect of quantum blue emitters in hBN

Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quadratic stark effect. Using these results, we employed DFT calculations to identify possible point defects with small transition dipole moments, which may be the source of blue emitters in hBN.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Bottom-Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity-Stabilized Quantum Emitters

Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size <10 nm) are highly desirable, at this size range their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this letter, we demonstrate a facile, bottom-up technique for the fabrication of sub-10-nm hBN nanoparticles hosting photostable bright emitters via a catalyst-free hydrothermal reaction between boric acid and melamine. We also implement a simple stabilization protocol that significantly reduces intensity fluctuation by ~85% and narrows the emission linewidth by ~14% by employing a common sol-gel silica coating process. Our study advances a promising strategy for the scalable, bottom-up synthesis of high-quality quantum emitters in hBN nanoparticles.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Bright and photostable single-photon emitter in silicon carbide

Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2$\times$10$^6$ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth $<0.1~$nm) that accounts for $>30$% of the total photoluminescence spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electron-nuclear coherent coupling and nuclear spin readout through optically polarized VB- spin states in hBN

Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time Tcoh = 15 us, close to the theoretically predicted limit of 18 us for spin defects in hBN. Modulation in the MHz range superimposed on the Hahn-echo decay curve are shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei through a nuclear quadrupole interaction of 2.11 MHz. Supporting DFT calculation confirm that the electron-nuclear coupling is confined to the defective layer. Our findings allow an in-depth understanding of the electron-nuclear interactions of the VB- defect in hBN and demonstrate its strong potential in quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fabrication of photonic resonators in bulk 4H-SiC

The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle etch method to fabricate various functional photonic devices from 4H Silicon Carbide - a material that has attracted attention in recent years, due to its potential in optomechanics, nonlinear optics and quantum information. We detail the processing conditions and thoroughly address the geometrical and optical characteristics of the fabricated devices. Employing photoluminescence measurements we demonstrate high quality factors for suspended microring resonators of up to 3500 in the visible range. Such devices will be applicable in the future to augment the properties of SiC in integrated on chip quantum photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nanofabrication of high Q, transferable, diamond resonators

Advancement of diamond based photonic circuitry requires robust fabrication protocols of key components, including diamond resonators and cavities. Here, we present 1D (nanobeam) photonic crystal cavities generated from single crystal diamond membranes utilising a metallic tungsten layer as a restraining, conductive and removable hard mask. The use of tungsten instead of a more conventional silicon oxide layer enables good repeatability and reliability of the fabrication procedures. The process yields high quality diamond cavities with quality factors (Q factors) approaching 10$^$4. Finally, we show that the cavities can be picked up and transferred onto a trenched substrate to realise fully suspended diamond cavities. Our fabrication process demonstrates the capability of diamond membranes as modular components for broader diamond based quantum photonic circuitry.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Recoil Implantation Using Gas-Phase Precursor Molecules

Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat Commun 11, 5039 (2020)]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation to most of the periodic table, and to applications in which thin film deposition or removal is impractical.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Roadmap on Integrated Quantum Photonics

Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There is strong evidence that these integrated technologies will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying laser and optical quantum technologies, with the required functionality and performance, can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration and a dramatic reduction in optical losses have enabled benchtop experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. The reduction in size, weight, power, and improvement in stability that will be enabled by QPICs will play a key role in increasing the degree of complexity and scale in quantum demonstrations. In the next decade, with sustained research, development, and investment in the quantum photonic ecosystem (i.e. PIC-based platforms, devices and circuits, fabrication and integration processes, packaging, and testing and benchmarking), we will witness the transition from single- and few-function prototypes to the large-scale integration of multi-functional and reconfigurable QPICs that will define how information is processed, stored, transmitted, and utilized for quantum computing, communications, metrology, and sensing. This roadmap highlights the current progress in the field of integrated quantum photonics, future challenges, and advances in science and technology needed to meet these challenges.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride

Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomically Thin Boron Nitride as an Ideal Spacer for Metal-Enhanced Fluorescence

The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ~95+-5), sensitivity (10^-8 M), reproducibility, and reusability (~90% of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Engineering spin defects in hexagonal boron nitride

Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the engineering of optically-addressable spin defects based on the negatively-charged boron vacancy center. We show that these centers can be created in exfoliated hexagonal boron nitride using a variety of focused ion beams (nitrogen, xenon and argon), with nanoscale precision. Using a combination of laser and resonant microwave excitation, we carry out optically detected magnetic resonance spectroscopy measurements, which reveal a zero-field ground state splitting for the defect of ~3.46 GHz. We also perform photoluminescence excitation spectroscopy and temperature dependent photoluminescence measurements to elucidate the photophysical properties of the center. Our results are important for advanced quantum and nanophotonics realizations involving manipulation and readout of spin defects in hexagonal boron nitride.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. We further utilize these emitters and integrate them with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results advance the controlled generation of spatially distributed quantum emitters in hBN and demonstrate a key step towards on-chip devices with maximum collection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

How to organize an online conference

On January 13th 2020, the inaugural Photonics Online Meetup (POM) brought together more than 1100 researchers to discuss the latest advances in photonics. Or rather, it didn't, because the meeting was completely delocalized with the speakers, organizers, and attendees scattered across six continents and hundreds of locations, connected via a video-conferencing tool and social media. Despite this "delocalisation," the meeting retained many characteristics of a traditional conference: invited and contributed talks with follow-up questions and discussion, and a poster session. However, unlike with traditional conferences, all attendees avoided air travel, high registration costs (it was completely free), CO2 emission, or visa issues. Surely the impact on families was minimized as well, though participants in inconvenient time zones had to wake up early or stay up late. In this Comment, we highlight the key steps that enabled this event, offering tips and advice, to aid the organisation of similar Online Meetups.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large few-layer hexagonal boron nitride flakes for nonlinear optics

Hexagonal boron nitride (hBN) is a layered dielectric material with a wide range of applications in optics and photonics. In this work, we demonstrate a fabrication method for few-layer hBN flakes with areas up to 5000 $\rm μm$. We show that hBN in this form can be integrated with photonic microstructures: as an example, we use a circular Bragg grating (CBG). The layer quality of the exfoliated hBN flake on a CBG is confirmed by second-harmonic generation (SHG) microscopy. We show that the SHG signal is uniform across the hBN sample outside the CBG and is amplified in the centre of the CBG.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical Thermometry with Quantum Emitters in Hexagonal Boron Nitride

Nanoscale optical thermometry is a promising non-contact route for measuring local temperature with both high sensitivity and spatial resolution. In this work, we present a deterministic optical thermometry technique based on quantum emitters in nanoscale hexagonal boron-nitride. We show that these nanothermometers exhibit better performance than that of homologous, all-optical nanothermometers both in sensitivity and range of working temperature. We demonstrate their effectiveness as nanothermometers by monitoring the local temperature at specific locations in a variety of custom-built micro-circuits. This work opens new avenues for nanoscale temperature measurements and heat flow studies in miniaturized, integrated devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Photonic nanobeam cavities with nano-pockets for efficient integration of fluorescent nanoparticles

Integrating fluorescent nanoparticles with high-Q, small mode volume cavities is indispensable for nanophotonics and quantum technologies. To date, nanoparticles have largely been coupled to evanescent fields of cavity modes, which limits the strength of the interaction. Here, we developed both a cavity design and a fabrication method that enable efficient coupling between a fluorescent nanoparticle and a cavity optical mode. The design consists of a fishbone-shaped, one-dimensional photonic crystal cavity with a nano-pocket located at the electric field maximum of the fundamental optical mode. Furthermore, the presence of a nanoparticle inside the pocket reduces the mode volume substantially and induces subwavelength light confinement. Our approach opens exciting pathways to achieve strong light confinement around fluorescent nanoparticles for applications in energy, sensing, lasing and quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Random Number Generation using a Solid-State Single-Photon Source

Quantum random number generation (QRNG) harnesses the intrinsic randomness of quantum mechanical phenomena. Demonstrations of such processes have, however, been limited to probabilistic sources, for instance, spontaneous parametric down-conversion or faint lasers, which cannot be triggered deterministically. Here, we demonstrate QRNG with a quantum emitter in hexagonal boron nitride; an emerging solid-state quantum source that can generate single photons on demand and operates at room temperature. We achieve true random number generation through the measurement of single photons exiting one of four integrated photonic waveguides, and subsequently, verify the randomness of the sequences in accordance with the National Institute of Standards and Technology benchmark suite. Our results open a new avenue to the fabrication of on-chip deterministic random number generators and other solid-state-based quantum-optical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride

Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable quantum photonics platform based on fiber-cavity enhanced single photon emission from two-dimensional hBN

Realization of quantum photonic devices requires coupling single quantum emitters to the mode of optical resonators. In this work we present a hybrid system consisting of defect centers in few-layer hBN grown by chemical vapor deposition and a fiber-based Fabry-Perot cavity. The sub 10 nm thickness of hBN and its smooth surface enables efficient integration into the cavity mode. We operate our hybrid platform over a broad spectral range larger than 30 nm and use its tuneability to explore different coupling regimes. Consequently, we achieve very large cavity-assisted signal enhancement up to 50-fold and equally strong linewidth narrowing owing to cavity funneling, both records for hBN-cavity systems. Additionally, we implement an excitation and readout scheme for resonant excitation that allows us to establish cavity-assisted PLE spectroscopy. Our work marks an important milestone for the deployment of 2D materials coupled to fiber-based cavities in practical quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley Polarization Enhancement Induced by a Single Chiral Nanoparticle

Valley polarization is amongst the most critical attributes of atomically thin materials. However, achieving a high contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a giant valley polarization contrast up to 45% from a monolayer WS2 has been achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed to the selective enhancement of both the excitation and the emission rate having one particular handedness of the circular polarization. The experimental results were corroborated by the optical simulation using finite-difference time-domain (FDTD) method. Additionally, the single chiral nanoparticle enabled the observation of valley-polarized luminescence with a linear excitation. Our results provide a promising pathway to enhance valley contrast from monolayer TMDs and utilize them for nanophotonic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation

Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material doping by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on doping, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on doping method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic doping of atomically thin materials and engineering of near-surface states of semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Quantum Nanophotonics with Group IV defects in Diamond

Diamond photonics is an ever growing field of research driven by the prospects of harnessing diamond and its colour centres as suitable hardware for solid-state quantum applications. The last two decades have seen the field been shaped by the nitrogen-vacancy (NV) centre both with breakthrough fundamental physics demonstrations and practical realizations. Recently however, an entire suite of other diamond defects has emerged. They are M V colour centres, where M indicates one of the elements in the IV column of the periodic table Si, Ge, Sn and Pb, and V indicates lattice vacancies, i.e. missing next-neighbour carbon atoms. These centres exhibit a much stronger emission into the zero phonon line then the NV centre, they display inversion symmetry, and can be engineered using ion implantation all attractive features for scalable quantum photonic architectures based on solid-state, single-photon sources. In this perspective, we highlight the leading techniques for engineering and characterizing these diamond defects, discuss the current state-of-the-art of group IV-based devices and provide an outlook of the future directions the field is taking towards the realisation of solid-state quantum photonics with diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping

Single photon emitters (SPEs) in solids have emerged as promising candidates for quantum photonic sensing, communications, and computing. Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure significantly challenge their technological utility. Here, we directly correlate hBN quantum emission with the material's local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nano-beam electron diffraction. Across 40 emitters and 15 samples, we observe zero phonon lines(ZPLs) in PL and CL ranging from 540-720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically-diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, four distinct defect classes are responsible for the observed emission range. One defect class has ZPLs near 615 nm with predominantly matched CL-PL responses; it is not a strain-tuned version of another defect class with ZPL emission centered at 580 nm. A third defect class at 650 nm has low visible-frequency CL emission; and a fourth defect species centered at 705 nm has a small, ~10 nm shift between its CL and PL peaks. All studied defects are stable upon both electron and optical irradiation. Our results provide an important foundation for atomic-scale optical characterization of color centers, as well as a foundation for engineering defects with precise emission properties.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal

Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect, the negatively charged boron vacancy and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet ground state with a zero field splitting of 3.5 GHz and establish that the centre exhibits optically detected magnetic resonance at room temperature. We also demonstrate the spin polarization of this centre under optical pumping, which leads to optically induced population inversion of the spin ground state a prerequisite for coherent spin manipulation schemes. Our results constitute a leap forward in establishing two dimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin based quantum information and sensing applications, as our ODMR studies on hBN NV diamonds hybrid structures show.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Second-harmonic generation in multilayer hexagonal boron nitride flakes

We report second-harmonic generation (SHG) from thick hexagonal boron nitride (hBN) flakes with approximately 109-111 layers. The resulting effective second-order susceptibility is similar to previously reported few-layer experiments. This confirms that thick hBN flakes can serve as a platform for nonlinear optics, which is useful because thick flakes are easy to exfoliate while retaining a large flake size. We also show spatial second-harmonic maps revealing that SHG remains a useful tool for the characterization of the layer structure even in the case of a large number of layers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride

Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

CVD nanodiamonds with non-blinking, near transform-limited linewidths emitters

Near transform-limited single photon sources are required for perfect photon indistinguishability in quantum networks. Having such sources in nanodiamonds is particularly important since it can enable engineering hybrid quantum photonic systems. In this letter, we report the generation of optically stable, nearly transform-limited single silicon vacancy emitters in nanodiamonds. Lines as narrow as 325 MHz are reported, which is comparable to the lifetime limited linewidth. Moreover, the emitters exhibit minimal spectrum diffusion and absolute photostability, even if pumped well above saturation. Our results suggest that nanodiamonds can host color centers with supreme properties suitable for hybrid photonic devices and quantum information.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Engineering and localization of quantum emitters in large hexagonal boron nitride layers

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of microns wide) of hBN. The emitters can be activated in as-grown hBN by electron irradiation or high temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at edges of the flakes, unlike most luminescent point defects in 3D materials. Our results constitute an important step on the road map of deploying hBN in nanophotonics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Localization of narrowband single photon emitters in nanodiamonds

Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bio-imaging. However, current understanding of the origin of these emitters is extremely limited. In this work we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particular, we show that nanocrystals with defects such as twin boundaries and secondary nucleation sites exhibit narrowband emission that is absent from pristine individual nanocrystals grown under the same conditions. Critically, we prove that the narrowband emission lines vanish when extended defects are removed deterministically using highly localized electron beam induced etching. Our results enhance the current understanding of single photon emitters in diamond, and are directly relevant to fabrication of novel quantum optics devices and sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Non-linear excitation of quantum emitters in two-dimensional hexagonal boron nitride

Two-photon absorption is an important non-linear process employed for high resolution bio-imaging and non-linear optics. In this work we realize two-photon excitation of a quantum emitter embedded in a two-dimensional material. We examine defects in hexagonal boron nitride and show that the emitters exhibit similar spectral and quantum properties under one-photon and two-photon excitation. Furthermore, our findings are important to deploy two-dimensional hexagonal boron nitride for quantum non-linear photonic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Emission from Defects in Single Crystal Hexagonal Boron Nitride

Bulk hexagonal boron nitride (hBN) is a highly nonlinear natural hyperbolic material that attracts major attention in modern nanophotonics applications. However, studies of its optical properties in the visible part of the spectrum and quantum emitters hosted by bulk hBN have not been reported to date. In this work we study the emission properties of hBN crystals in the red spectral range using sub-bandgap optical excitation. Quantum emission from defects is observed at room temperature and characterized in detail. Our results advance the use of hBN in quantum nanophotonics technologies and enhance our fundamental understanding of its optical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust multicolor single photon emission from point defects in hexagonal boron nitride

Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the visible and the near infrared spectral ranges from point defects in hBN multilayers. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. We further show two approaches for engineering of the emitters using either electron beam irradiation or annealing, and characterize their photophysical properties. The emitters exhibit narrow line widths of sub 10 nm at room temperature, and a short excited state lifetime with high brightness. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute the first step towards deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust Solid State Quantum System Operating at 800 K

Realization of Quantum information and communications technologies requires robust, stable solid state single photon sources. However, most existing sources cease to function above cryogenic or room temperature due to thermal ionization or strong phonon coupling which impede their emissive and quantum properties. Here we present an efficient single photon source based on a defect in a van der Waals crystal that is optically stable and operates at elevated temperatures of up to 800 K. The quantum nature of the source and the photon purity are maintained upon heating to 800 K and cooling back to room temperature. Our report of a robust high temperature solid state single photon source constitutes a significant step to-wards practical, integrated quantum technologies for real-world environments.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust, directed assembly of fluorescent nanodiamonds

Arrays of fluorescent nanoparticles are highly sought after for applications in sensing and nanophotonics. Here we present a simple and robust method of assembling fluorescent nanodiamonds into macroscopic arrays. Remarkably, the yield of this directed assembly process is greater than 90% and the assembled patterns withstand ultra-sonication for more than three hours. The assembly process is based on covalent bonding of carboxyl to amine functional carbon seeds and is applicable to any material, and to non-planar surfaces. Our results pave the way to directed assembly of sensing and nanophotonics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Room temperature single photon emission from oxidized tungsten disulphide multilayers

Two dimensional systems offer a unique platform to study light matter interaction at the nanoscale. In this work we report on robust quantum emitters fabricated by thermal oxidation of tungsten disulphide multilayers. The emitters show robust, optically stable, linearly polarized luminescence at room temperature, can be modeled using a three level system, and exhibit moderate bunching. Overall, our results provide important insights into understanding of defect formation and quantum emitter activation in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Direct-write milling of diamond by a focused oxygen ion beam

Recent advances in focused ion beam technology have enabled high-resolution, direct-write nanofabrication using light ions. Studies with light ions to date have, however, focused on milling of materials where sub-surface ion beam damage does not inhibit device performance. Here we report on direct-write milling of single crystal diamond using a focused beam of oxygen ions. Material quality is assessed by Raman and luminescence analysis, and reveals that the damage layer generated by oxygen ions can be removed by nonintrusive post-processing methods such as localised electron beam induced chemical etching.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrical excitation of silicon-vacancy centers in single crystal diamond

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electroluminescence from isolated defects in zinc oxide, towards electrically triggered single photon sources at room temperature

Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography and quantum communications. However, so far majority of room temperature emitters are only excited optically, which limits their proper integration into scalable devices. In this work, we overcome this limitation and present room temperature electrically triggered light emission from localized defects in zinc oxide (ZnO) nanoparticles and thin films. The devices emit at the red spectral range and show excellent rectifying behavior. The emission is stable over an extensive period of time, providing an important prerequisite for practical devices. Our results open up possibilities to build new ZnO based quantum integrated devices that incorporate solid-state single photon sources for quantum information technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Emergent formation of dynamic topographic patterns in electron beam induced etching

Spontaneous formation of geometric patterns is a fascinating, ubiquitous process that provides fundamental insights into the roles of symmetry breaking, anisotropy and nonlinear interactions in emergent phenomena. Here we report dynamic, highly ordered topographic patterns on the surface of diamond that span multiple length scales and have a symmetry controlled by the chemical species of a precursor gas used in electron beam induced etching (EBIE). This behavior reveals an underlying etch rate anisotropy and an electron energy transfer pathway that has been overlooked by existing EBIE theory. We present an etch rate kinetics model that fully explains our results and is universally applicable to EBIE. Our findings can be exploited for controlled wetting, optical structuring and other emerging applications that require nano and micro-scale surface texturing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced photoluminescence from single nitrogen-vacancy defects in nanodiamonds coated with metal-phenolic networks

Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and biolabeling. In this work we demonstrate a robust approach to surface functionalize individual nanodiamonds with metal-phenolic networks that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation suppresses the non-radiative decay pathways of the NV color centers. Our results provide a versatile and assessable way to enhance photoluminescence from nanodiamond defects that can be used in a variety of sensing and imaging applications

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Facile Self-Assembly of Quantum Plasmonic Circuit Components

Efficient coupling between solid state quantum emitters and plasmonic waveguides is important for the realization of integrated circuits for quantum information, communication and sensing. However, realization of plasmonic circuits is still scarce, particularly due to challenges associated with accurate positioning of quantum emitters near plasmonic resonators. Current pathways for the construction of plasmonic circuits involve cumbersome and costly methods such as scanning atomic force microscopy or mechanical manipulation, where individual elements are physically relocated using the scanning tip. Here, we introduce a simple, fast and cost effective chemical self-assembly method for the attachment of two primary components of a practical plasmonic circuit: a single photon emitter and a waveguide. Our method enables coupling of nanodiamonds with a single quantum emitter (the nitrogen-vacancy (NV) center) onto the terminal of a silver nanowire, by simply varying the concentration of ascorbic acid (AA) in a reaction solution. The AA concentration is used to control the extent of agglomeration, and can be optimised so as to cause preferential, selective activation of the tips of the nanowires. The nanowire-nanodiamond structures show efficient plasmonic coupling of fluorescence emission from single NV centers into surface plasmon polariton (SPP) modes, evidenced by a more than two-fold reduction in fluorescence lifetime and an increase in fluorescence intensity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum Emission From Hexagonal Boron Nitride Monolayers

Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics. However, non-classical photon emission from these materials has not been achieved to date. Here we report room temperature quantum emission from hexagonal boron nitride nanoflakes. The single photon emitter exhibits a combination of superb quantum optical properties at room temperature that include the highest brightness reported in the visible part of the spectrum, narrow line width, absolute photo-stability, a short excited state lifetime and a high quantum efficiency. Density functional theory modeling suggests that the emitter is the antisite nitrogen vacancy defect that is present in single and multi-layer hexagonal boron nitride. Our results constitute the unprecedented potential of van der Waals crystals for nanophotonics, optoelectronics and quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity

The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement of NVs within the cavity. Here, we report photonic crystal nanobeam cavities coupled to NVs incorporated by a delta-doping technique that allows nanometer-scale vertical positioning of the emitters. We demonstrate cavities with Q up to ~24,000 and mode volume V ~ $0.47(λ/n)^{3}$ as well as resonant enhancement of the ZPL of an NV ensemble with Purcell factor of ~20. Our fabrication technique provides a first step towards deterministic NV-cavity coupling using spatial control of the emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

We present a beam-directed chemical technique for controlling the charge states of near-surface luminescence centers in semiconductors. Specifically, we fluorinate the surface of H-terminated diamond by electron beam irradiation in the presence of NF3 vapor. The fluorination treatment acts as a local chemical switch that alters the charge state of nitrogen-vacancy luminescence centers from the neutral to the negative state. The electron beam fluorination process is highly localized and can be used to control the emission spectrum of individual nanodiamonds and surface regions scanned by the electron beam

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum-confined single photon emission at room temperature from Silicon carbide tetrapods

Controlled engineering of isolated solid state quantum systems is one of the most prominent goals in modern nanotechnology. In this letter we demonstrate a previously unknown quantum system namely silicon carbide tetrapods. The tetrapods have a cubic polytype core (3C) and hexagonal polytype legs (4H) a geometry that creates a spontaneous polarization within a single tetrapod. Modeling of the tetrapod structures predict that a bound exciton should exist at the 3C 4H interface. The simulations are confirmed by the observation of fully polarized and narrowband single photon emission from the tetrapods at room temperature. The single photon emission provides important insights towards understanding the quantum confinement effects in non-spherical nanostructures. Our results pave the way to a new class of crystal phase nanomaterials that exhibit single photon emission at room temperature and therefore are suitable for sensing, quantum information and nanophotonics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Single photon emission from ZnO nanoparticles

Room temperature single photon emitters are very important resources for photonics and emerging quantum technologies. In this work we study single photon emission from defect centers in 20 nm zinc oxide (ZnO) nanoparticles. The emitters exhibit bright broadband fluorescence in the red spectral range centered at 640 nm with polarized excitation and emission. The studied emitters showed continuous blinking, however, bleaching can be suppressed using a polymethyl methacrylate (PMMA) coating. Furthermore, hydrogen termination increased the density of single photon emitters. Our results will contribute to the identification of quantum systems in ZnO.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Study of narrowband single photon emitters in polycrystalline diamond films

Quantum information processing and integrated nanophotonics require robust generation of single photon emitters on demand. In this work we demonstrate that diamond films grown by microwave plasma chemical vapour deposition on a silicon substrate host bright, narrowband single photon emitters in the visible to near infrared spectral range. The emitters possess fast lifetime, absolute photostability, and exhibit full polarization at excitation and emission. Pulsed and continuous laser excitations confirm their quantum behaviour at room temperature, while low temperature spectroscopy is done to investigate their inhomogeneous broadening. Our results advance the knowledge of solid state single photon sources and open pathways for their practical implementation in quantum communication and quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Subtractive 3D Printing of Optically Active Diamond Structures

Diamond has recently attracted considerable attention as a promising platform for quantum technologies, photonics and high resolution sensing applications. Here we demonstrate a chemical approach that enables the fabrication of functional diamond structures using gas-mediated electron induced etching. The method achieves chemical etching at room temperature through the dissociation of surface-adsorbed H2O molecules by electron irradiation in a water vapor environment. High throughput, parallel processing is possible by electron flood exposure and the use of an etch mask, while single step, mask-free three dimensional fabrication and iterative editing are achieved using a variable pressure scanning electron microscope. The electron induced chemical etching paves the way to a transformative technology for nanofabrication of diamond and other wide band-gap semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Synthesis of Luminescent Eu defects in diamond

Lanthanides are vital components in lighting, imaging technologies and future quantum memory applications due to their narrow optical transitions and long spin coherence times. Recently, diamond has become a preeminent platform for realization of many experiments in quantum information science. In this work, we demonstrate a promising approach to incorporate Eu ions into single crystal diamond and nanodiamonds, providing a means to harness the exceptional characteristics of both lanthanides and diamond in a single material. Polyelectrolytes are used to electrostatically assemble Eu(III) chelate molecules on diamond and subsequently chemical vapor deposition is employed for the growth of a high quality diamond crystal. Photoluminescence, cathodoluminescence and time resolved fluorescence measurements show that the Eu atoms retain the characteristic optical signature of Eu(III) upon incorporation into the diamond lattice. Computational modelling supports the experimental findings, corroborating that Eu3+ in diamond is a stable configuration within the diamond bandgap. The versatility of the synthetic technique is further illustrated through the creation of the well-studied Cr defect center. Together these defect centers demonstrate the outstanding chemical control over the incorporation of impurities into diamond enabled by the electrostatic assembly together with chemical vapour deposition growth.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Bottom-up Engineering of Diamond Nanostructures

Engineering nanostructures from the bottom up enables the creation of carefully engineered complex structures that are not accessible via top down fabrication techniques, in particular, complex periodic structures for applications in photonics and sensing. In this work, we propose and demonstrate a bottom up approach that can be adopted and utilized to controllably build diamond nanostructures. A realization of periodic structures and optical wave-guiding is achieved by growing nanoscale single crystal diamond through a defined pattern.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nanodiamonds with silicon vacancy defects for non-toxic photostable fluorescent labeling of neural precursor cells

Nanodiamonds (NDs) containing silicon vacancy (SiV) defects were evaluated as a potential biomarker for the labeling and fluorescent imaging of neural precursor cells (NPCs). SiV-containing NDs were synthesized using chemical vapor deposition and silicon ion implantation. Spectrally, SiV-containing NDs exhibited extremely stable fluorescence and narrow bandwidth emission with an excellent signal to noise ratio exceeding that of NDs containing nitrogen-vacancy (NV) centers. NPCs labeled with NDs exhibited normal cell viability and proliferative properties consistent with biocompatibility. We conclude that SiVcontaining NDs are a promising biomedical research tool for cellular labeling and optical imaging in stem cell research.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Photoluminescent SiC tetrapods

Recently, significant research efforts have been made to develop complex nanostructures to provide more sophisticated control over the optical and electronic properties of nanomaterials. However, there are only a handful of semiconductors which allow control over their geometry via simple chemical processes. Here, we present a molecularly seeded synthesis of a complex nanostructure, SiC tetrapods, and report on their structural and optical properties. The SiC tetrapods exhibit narrow linewidth photoluminescence at wavelengths spanning the visible to near infrared spectral range. Synthesized from low-toxicity, earth abundant elements, these tetrapods are a compelling replacement for technologically important quantum optical materials that frequently require toxic metals such as Cd and Se. This new, previously unknown geometry of SiC nanostructures is a compelling platform for biolabeling, sensing, spintronics and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Marker in the Near Infrared

We demonstrate that nanodiamonds fabricated to incorporate silicon-vacancy (Si-V) color centers provide bright, spectrally narrow, and stable cathodoluminescence (CL) in the near-infrared. Si-V color centers containing nanodiamonds are promising as non-bleaching optical markers for correlated CL and secondary electron microscopy, including applications to nanoscale bioimaging.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity

Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fabrication of thin diamond membranes for photonic applications

High quality, thin diamond membranes containing nitrogen-vacancy centers provide critical advantages in the fabrication of diamond-based structures for a variety of applications, including wide field magnetometry, photonics and bio-sensing. In this work we describe, in detail, the generation of thin, optically-active diamond membranes by means of ion implantation and overgrowth. To establish the suitability of our method for photonic applications, photonic crystal cavities with quality factor of 1000 are fabricated.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Homoepitaxial Growth of Single Crystal Diamond Membranes for Quantum Information Processing

Fabrication of devices designed to fully harness the unique properties of quantum mechanics through their coupling to quantum bits (qubits) is a prominent goal in the field of quantum information processing (QIP). Among various qubit candidates, nitrogen vacancy (NV) centers in diamond have recently emerged as an outstanding platform for room temperature QIP. However, formidable challenges still remain in processing diamond and in the fabrication of thin diamond membranes, which are necessary for planar photonic device engineering. Here we demonstrate epitaxial growth of single crystal diamond membranes using a conventional microwave chemical vapor deposition (CVD) technique. The grown membranes, only a few hundred nanometers thick, show bright luminescence, excellent Raman signature and good NV center electronic spin coherence times. Microdisk cavities fabricated from these membranes exhibit quality factors of up to 3000, overlapping with NV center emission. Our methodology offers a scalable approach for diamond device fabrication for photonics, spintronics, optomechanics and sensing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Low threshold, room-temperature microdisk lasers in the blue spectral range

InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonon-induced dephasing of chromium colour centres in diamond

We report on the coherence properties of single photons from chromium-based colour centres in diamond. We use field-correlation and spectral lineshape measurements to reveal the interplay between slow spectral wandering and fast dephasing mechanisms as a function of temperature. We show that the zero-phonon transition frequency and its linewidth follow a power-law dependence on temperature indicating that the dominant fast dephasing mechanisms for these centres are direct electron-phonon coupling and phonon-modulated Coulomb coupling to nearby impurities. Further, the observed reduction in the quantum yield for photon emission as a function of temperature is consistent with the opening of additional nonradiative channels through thermal activation to higher energy states predominantly and indicates a near-unity quantum efficiency at 4 K.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μ-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μW). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN μ-disk cavities may have important implication in cavity quantum electrodynamics and the development of efficient light emitting devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coupling of silicon-vacancy centers to a single crystal diamond cavity

Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal diamond membrane generated by ion implantation and, electrochemical liftoff followed by homo-epitaxial overgrowth. Whispering gallery modes which spectrally overlap with the zero-phonon line (ZPL) of the SiV centers and exhibit quality factors ~2200 are measured. Lifetime reduction from 1.8 ns to 1.48 ns is observed from SiV centers in the cavity compared to those in the membrane outside the cavity. These results are pivotal in developing diamond integrated photonics networks.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Fabrication of Thin, Luminescent, Single-crystal Diamond Membranes

The formation of single-crystal diamond membranes is an important prerequisite for the fabrication of high-quality optical cavities in this material. Diamond membranes fabricated using lift-off processes involving the creation of a damaged layer through ion implantation often suffer from residual ion damage, which severely limits their usefulness for photonic structures. The current work demonstrates that strategic etch removal of the most highly defective material yields thin, single-crystal diamond membranes with strong photoluminescence and a Raman signature approaching that of single-crystal bulk diamond. These optically-active membranes can form the starting point for fabrication of high-quality optical resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Chromium single photon emitters in diamond fabricated by ion implantation

Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of a chromium bright single photon source in bulk diamond by ion implantation. The Cr center has fully polarized emission with a ZPL centered at 749 nm, FWHM of 4 nm, an extremely short lifetime of ~1 ns, and a count rate of 500 kcounts/s. By combining the polarization measurements and the vibronic spectra, a model of the center has been proposed consisting of one interstitial chromium atom with a transition dipole along one of the <100> directions.

0 citations0 reviewsNo code linkedOpen access