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Electrical excitation of silicon-vacancy centers in single crystal diamond

Electrically driven emission from negatively charged silicon-vacancy, (SiV)- centres in single crystal diamond is demonstrated. The SiV centres were generated using ion implantation into an intrinsic (i) region of a p-i-n single crystal diamond diode. Both electroluminescence and the photoluminescence signals exhibit the typical emission that is attributed to the (SiV)- centres. Under forward and reversed biased PL measurements, no signal from the neutral (SiV)0 defect could be observed. The realization of electrically driven (SiV)- emission is promising for scalable nanophotonics devices employing colour centres in single crystal diamond.

preprint2015arXivOpen access
Amanuel M. BerhaneSumin ChoiHiromitsu KatoToshiharu MakinoNorikazu MizuochiSatoshi YamasakiIgor Aharonovich
cond-mat.mtrl-sciphysics.optics
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Amanuel M. BerhaneSumin ChoiHiromitsu KatoToshiharu MakinoNorikazu MizuochiSatoshi YamasakiIgor Aharonovich

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