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Milos Toth

Milos Toth appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mtrl-sciphysics.app-phquant-phcond-mat.mes-hallphysics.ins-det

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Published work

29 published item(s)

preprint2023arXiv

Photophysics of blue quantum emitters in hexagonal Boron Nitride

Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation

Two dimensional materials are becoming increasingly popular as a platform for studies of quantum phenomena and for the production of prototype quantum technologies. Quantum emitters in 2D materials can host two level systems that can act as qubits for quantum information processing. Here, we characterize the behavior of position-controlled quantum emitters in hexagonal boron nitride at cryogenic temperatures. Over two dozen sites, we observe an ultra-narrow distribution of the zero phonon line at ~436 nm, together with strong linearly polarized emission. We employ resonant excitation to characterize the emission lineshape and find spectral diffusion and phonon broadening contribute to linewidths in the range 1-2 GHz. Rabi oscillations are observed at a range of resonant excitation powers, and under 1 $μ$W excitation a coherent superposition is maintained up to 0.90 ns. Our results are promising for future employment of quantum emitters in hBN for scalable quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Coupling Spin Defects in Hexagonal Boron Nitride to Titanium Oxide Ring Resonators

Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled boron vacancy showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Integrated Room Temperature Single Photon Source for Quantum Key Distribution

High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Stark effect of quantum blue emitters in hBN

Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quadratic stark effect. Using these results, we employed DFT calculations to identify possible point defects with small transition dipole moments, which may be the source of blue emitters in hBN.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Bottom-Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity-Stabilized Quantum Emitters

Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size <10 nm) are highly desirable, at this size range their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this letter, we demonstrate a facile, bottom-up technique for the fabrication of sub-10-nm hBN nanoparticles hosting photostable bright emitters via a catalyst-free hydrothermal reaction between boric acid and melamine. We also implement a simple stabilization protocol that significantly reduces intensity fluctuation by ~85% and narrows the emission linewidth by ~14% by employing a common sol-gel silica coating process. Our study advances a promising strategy for the scalable, bottom-up synthesis of high-quality quantum emitters in hBN nanoparticles.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fabrication of photonic resonators in bulk 4H-SiC

The design and engineering of photonic architectures, suitable to enhance, collect and guide light on chip is needed for applications in quantum photonics and quantum optomechanics. In this work we apply a Faraday cage based oblique angle etch method to fabricate various functional photonic devices from 4H Silicon Carbide - a material that has attracted attention in recent years, due to its potential in optomechanics, nonlinear optics and quantum information. We detail the processing conditions and thoroughly address the geometrical and optical characteristics of the fabricated devices. Employing photoluminescence measurements we demonstrate high quality factors for suspended microring resonators of up to 3500 in the visible range. Such devices will be applicable in the future to augment the properties of SiC in integrated on chip quantum photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Recoil Implantation Using Gas-Phase Precursor Molecules

Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat Commun 11, 5039 (2020)]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation to most of the periodic table, and to applications in which thin film deposition or removal is impractical.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. We further utilize these emitters and integrate them with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results advance the controlled generation of spatially distributed quantum emitters in hBN and demonstrate a key step towards on-chip devices with maximum collection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical Thermometry with Quantum Emitters in Hexagonal Boron Nitride

Nanoscale optical thermometry is a promising non-contact route for measuring local temperature with both high sensitivity and spatial resolution. In this work, we present a deterministic optical thermometry technique based on quantum emitters in nanoscale hexagonal boron-nitride. We show that these nanothermometers exhibit better performance than that of homologous, all-optical nanothermometers both in sensitivity and range of working temperature. We demonstrate their effectiveness as nanothermometers by monitoring the local temperature at specific locations in a variety of custom-built micro-circuits. This work opens new avenues for nanoscale temperature measurements and heat flow studies in miniaturized, integrated devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Photonic nanobeam cavities with nano-pockets for efficient integration of fluorescent nanoparticles

Integrating fluorescent nanoparticles with high-Q, small mode volume cavities is indispensable for nanophotonics and quantum technologies. To date, nanoparticles have largely been coupled to evanescent fields of cavity modes, which limits the strength of the interaction. Here, we developed both a cavity design and a fabrication method that enable efficient coupling between a fluorescent nanoparticle and a cavity optical mode. The design consists of a fishbone-shaped, one-dimensional photonic crystal cavity with a nano-pocket located at the electric field maximum of the fundamental optical mode. Furthermore, the presence of a nanoparticle inside the pocket reduces the mode volume substantially and induces subwavelength light confinement. Our approach opens exciting pathways to achieve strong light confinement around fluorescent nanoparticles for applications in energy, sensing, lasing and quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Random Number Generation using a Solid-State Single-Photon Source

Quantum random number generation (QRNG) harnesses the intrinsic randomness of quantum mechanical phenomena. Demonstrations of such processes have, however, been limited to probabilistic sources, for instance, spontaneous parametric down-conversion or faint lasers, which cannot be triggered deterministically. Here, we demonstrate QRNG with a quantum emitter in hexagonal boron nitride; an emerging solid-state quantum source that can generate single photons on demand and operates at room temperature. We achieve true random number generation through the measurement of single photons exiting one of four integrated photonic waveguides, and subsequently, verify the randomness of the sequences in accordance with the National Institute of Standards and Technology benchmark suite. Our results open a new avenue to the fabrication of on-chip deterministic random number generators and other solid-state-based quantum-optical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride

Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation

Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material doping by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on doping, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on doping method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic doping of atomically thin materials and engineering of near-surface states of semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal

Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect, the negatively charged boron vacancy and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet ground state with a zero field splitting of 3.5 GHz and establish that the centre exhibits optically detected magnetic resonance at room temperature. We also demonstrate the spin polarization of this centre under optical pumping, which leads to optically induced population inversion of the spin ground state a prerequisite for coherent spin manipulation schemes. Our results constitute a leap forward in establishing two dimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin based quantum information and sensing applications, as our ODMR studies on hBN NV diamonds hybrid structures show.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride

Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Engineering and localization of quantum emitters in large hexagonal boron nitride layers

Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of microns wide) of hBN. The emitters can be activated in as-grown hBN by electron irradiation or high temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at edges of the flakes, unlike most luminescent point defects in 3D materials. Our results constitute an important step on the road map of deploying hBN in nanophotonics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Localization of narrowband single photon emitters in nanodiamonds

Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bio-imaging. However, current understanding of the origin of these emitters is extremely limited. In this work we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particular, we show that nanocrystals with defects such as twin boundaries and secondary nucleation sites exhibit narrowband emission that is absent from pristine individual nanocrystals grown under the same conditions. Critically, we prove that the narrowband emission lines vanish when extended defects are removed deterministically using highly localized electron beam induced etching. Our results enhance the current understanding of single photon emitters in diamond, and are directly relevant to fabrication of novel quantum optics devices and sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Emission from Defects in Single Crystal Hexagonal Boron Nitride

Bulk hexagonal boron nitride (hBN) is a highly nonlinear natural hyperbolic material that attracts major attention in modern nanophotonics applications. However, studies of its optical properties in the visible part of the spectrum and quantum emitters hosted by bulk hBN have not been reported to date. In this work we study the emission properties of hBN crystals in the red spectral range using sub-bandgap optical excitation. Quantum emission from defects is observed at room temperature and characterized in detail. Our results advance the use of hBN in quantum nanophotonics technologies and enhance our fundamental understanding of its optical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust multicolor single photon emission from point defects in hexagonal boron nitride

Hexagonal boron nitride (hBN) is an emerging two dimensional material for quantum photonics owing to its large bandgap and hyperbolic properties. Here we report a broad range of multicolor room temperature single photon emissions across the visible and the near infrared spectral ranges from point defects in hBN multilayers. We show that the emitters can be categorized into two general groups, but most likely possess similar crystallographic structure. We further show two approaches for engineering of the emitters using either electron beam irradiation or annealing, and characterize their photophysical properties. The emitters exhibit narrow line widths of sub 10 nm at room temperature, and a short excited state lifetime with high brightness. Remarkably, the emitters are extremely robust and withstand aggressive annealing treatments in oxidizing and reducing environments. Our results constitute the first step towards deterministic engineering of single emitters in 2D materials and hold great promise for the use of defects in boron nitride as sources for quantum information processing and nanophotonics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust Solid State Quantum System Operating at 800 K

Realization of Quantum information and communications technologies requires robust, stable solid state single photon sources. However, most existing sources cease to function above cryogenic or room temperature due to thermal ionization or strong phonon coupling which impede their emissive and quantum properties. Here we present an efficient single photon source based on a defect in a van der Waals crystal that is optically stable and operates at elevated temperatures of up to 800 K. The quantum nature of the source and the photon purity are maintained upon heating to 800 K and cooling back to room temperature. Our report of a robust high temperature solid state single photon source constitutes a significant step to-wards practical, integrated quantum technologies for real-world environments.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust, directed assembly of fluorescent nanodiamonds

Arrays of fluorescent nanoparticles are highly sought after for applications in sensing and nanophotonics. Here we present a simple and robust method of assembling fluorescent nanodiamonds into macroscopic arrays. Remarkably, the yield of this directed assembly process is greater than 90% and the assembled patterns withstand ultra-sonication for more than three hours. The assembly process is based on covalent bonding of carboxyl to amine functional carbon seeds and is applicable to any material, and to non-planar surfaces. Our results pave the way to directed assembly of sensing and nanophotonics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Room temperature single photon emission from oxidized tungsten disulphide multilayers

Two dimensional systems offer a unique platform to study light matter interaction at the nanoscale. In this work we report on robust quantum emitters fabricated by thermal oxidation of tungsten disulphide multilayers. The emitters show robust, optically stable, linearly polarized luminescence at room temperature, can be modeled using a three level system, and exhibit moderate bunching. Overall, our results provide important insights into understanding of defect formation and quantum emitter activation in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Direct-write milling of diamond by a focused oxygen ion beam

Recent advances in focused ion beam technology have enabled high-resolution, direct-write nanofabrication using light ions. Studies with light ions to date have, however, focused on milling of materials where sub-surface ion beam damage does not inhibit device performance. Here we report on direct-write milling of single crystal diamond using a focused beam of oxygen ions. Material quality is assessed by Raman and luminescence analysis, and reveals that the damage layer generated by oxygen ions can be removed by nonintrusive post-processing methods such as localised electron beam induced chemical etching.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Emergent formation of dynamic topographic patterns in electron beam induced etching

Spontaneous formation of geometric patterns is a fascinating, ubiquitous process that provides fundamental insights into the roles of symmetry breaking, anisotropy and nonlinear interactions in emergent phenomena. Here we report dynamic, highly ordered topographic patterns on the surface of diamond that span multiple length scales and have a symmetry controlled by the chemical species of a precursor gas used in electron beam induced etching (EBIE). This behavior reveals an underlying etch rate anisotropy and an electron energy transfer pathway that has been overlooked by existing EBIE theory. We present an etch rate kinetics model that fully explains our results and is universally applicable to EBIE. Our findings can be exploited for controlled wetting, optical structuring and other emerging applications that require nano and micro-scale surface texturing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Facile Self-Assembly of Quantum Plasmonic Circuit Components

Efficient coupling between solid state quantum emitters and plasmonic waveguides is important for the realization of integrated circuits for quantum information, communication and sensing. However, realization of plasmonic circuits is still scarce, particularly due to challenges associated with accurate positioning of quantum emitters near plasmonic resonators. Current pathways for the construction of plasmonic circuits involve cumbersome and costly methods such as scanning atomic force microscopy or mechanical manipulation, where individual elements are physically relocated using the scanning tip. Here, we introduce a simple, fast and cost effective chemical self-assembly method for the attachment of two primary components of a practical plasmonic circuit: a single photon emitter and a waveguide. Our method enables coupling of nanodiamonds with a single quantum emitter (the nitrogen-vacancy (NV) center) onto the terminal of a silver nanowire, by simply varying the concentration of ascorbic acid (AA) in a reaction solution. The AA concentration is used to control the extent of agglomeration, and can be optimised so as to cause preferential, selective activation of the tips of the nanowires. The nanowire-nanodiamond structures show efficient plasmonic coupling of fluorescence emission from single NV centers into surface plasmon polariton (SPP) modes, evidenced by a more than two-fold reduction in fluorescence lifetime and an increase in fluorescence intensity.

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preprint2015arXiv

Quantum Emission From Hexagonal Boron Nitride Monolayers

Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics. However, non-classical photon emission from these materials has not been achieved to date. Here we report room temperature quantum emission from hexagonal boron nitride nanoflakes. The single photon emitter exhibits a combination of superb quantum optical properties at room temperature that include the highest brightness reported in the visible part of the spectrum, narrow line width, absolute photo-stability, a short excited state lifetime and a high quantum efficiency. Density functional theory modeling suggests that the emitter is the antisite nitrogen vacancy defect that is present in single and multi-layer hexagonal boron nitride. Our results constitute the unprecedented potential of van der Waals crystals for nanophotonics, optoelectronics and quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

We present a beam-directed chemical technique for controlling the charge states of near-surface luminescence centers in semiconductors. Specifically, we fluorinate the surface of H-terminated diamond by electron beam irradiation in the presence of NF3 vapor. The fluorination treatment acts as a local chemical switch that alters the charge state of nitrogen-vacancy luminescence centers from the neutral to the negative state. The electron beam fluorination process is highly localized and can be used to control the emission spectrum of individual nanodiamonds and surface regions scanned by the electron beam

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preprint2014arXiv

Subtractive 3D Printing of Optically Active Diamond Structures

Diamond has recently attracted considerable attention as a promising platform for quantum technologies, photonics and high resolution sensing applications. Here we demonstrate a chemical approach that enables the fabrication of functional diamond structures using gas-mediated electron induced etching. The method achieves chemical etching at room temperature through the dissociation of surface-adsorbed H2O molecules by electron irradiation in a water vapor environment. High throughput, parallel processing is possible by electron flood exposure and the use of an etch mask, while single step, mask-free three dimensional fabrication and iterative editing are achieved using a variable pressure scanning electron microscope. The electron induced chemical etching paves the way to a transformative technology for nanofabrication of diamond and other wide band-gap semiconductors.

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