Abstract
The axio-electric effect in silicon atoms is sought for solar axions appearing owing to bremsstrahlung and the Compton process. Axions are detected using a Si(Li) detector placed in a low-background setup. As a result, a model-independent constraint on the axion-electron coupling constant has been obtained, which leads to the bounds 7.9 eV and 1.4 keV for the mass of the axion in the DFSZ and KSVZ models, respectively (90% C.L.).
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