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Researcher profile

Peng-Lai Gong

Peng-Lai Gong contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Double version of the Rashba and Dresselhaus spin-orbit coupling

The Rashba and Dresselhaus types of spin-orbit coupling are two typical linear coupling forms. We establish the fundamental physics of a model which can be viewed as the double version of the Rashba and Dresselhaus spin-orbit coupling. This model describes the low energy physics of a class of massless Dirac fermions in spin-orbit systems. The physical properties of the massless Dirac fermions are determined by the mathematical relations of spin-orbit coefficients. For equal Rashba and Dresselhauss coupling constants, k-independent eigenspinors and a persistent spin helix combined with massless birefringent Dirac fermions emerge in this model. The spin-orbit coupled systems described by this model have potential technological applications from spintronics to quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin field-effect transistors based on massless birefringent Dirac fermions in polar Dirac semimetals

The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor based on massless birefringent Dirac fermions in polar Dirac semimetals. The manipulation of spin arises from the existence of the strong spin-orbit coupling, polar space groups, and Dirac cones in a single phase. The oscillatory channel conductance can be controlled by the sign of gate voltage in addition to its magnitude due to the gapless band structures of polar Dirac semimetals. Such spin field-effect transistor provides guidance for the further design of spintronic devices.

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preprint2021arXiv

Hole- and electron-injection driven phase transitions in transition metal dichalcogenides and beyond: A unified understanding

The phase transitions among polymorphic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention for their potential in enabling distinct functionalities in the same material for making integrated devices. Electron-injection to TMDs has been proved to be a feasible way to drive structural phase transition from the semiconducting H-phase to the semimetal dT-phase. In this contribution, based on density-functional theory (DFT) calculations, firstly we demonstrate that hole-injection drives the transition of the H-phase more efficiently to the metallic T-phase than to the semimetallic dT-phase for group VI-B TMDs (MoS2, WS2, and MoSe2, etc.). The origin can be attributed to the smaller work function of the T-phase than that of the dT-phase. Our work function analysis can distinguish the T and dT phases quantitatively while it is challenging for the commonly used crystal field splitting analysis. In addition, our analysis provides a unified understanding for both hole- and electron-injection induced phase transitions for 2D materials beyond TMDs, such as the newly synthesized MoSi2N4 family. Moreover, the hole-driven T-phase transition mechanism can explain the recent experiment of WS2 phase transition by hole-doping with yttrium (Y) atoms. Using 1/3 Y-doped WS2 and MoSe2 as examples, we show that the Mo and W valency increases to 5+. These above findings open up an avenue to obtain the metallic T-phase, which expands the possible stable phases of 2D materials.

0 citations0 reviewsNo code linkedOpen access