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Source author record

Jeong Yong Lee

Jeong Yong Lee appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scihep-ph

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Published work

4 published item(s)

preprint2012arXiv

Reevaluation of Neutron Electric Dipole Moment with QCD Sum Rules

We study the neutron electric dipole moment in the presence of the CP-violating operators up to the dimension five in terms of the QCD sum rules. It is found that the OPE calculation is robust when exploiting a particular interpolating field for neutron, while there exist some uncertainties on the phenomenological side. By using input parameters obtained from the lattice calculation, we derive a conservative limit for the contributions of the CP violating operators. We also show the detail of the derivation of the sum rules.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Role of interface reaction on resistive switching of Metal/a-TiO2/Al RRAM devices

For the clear understanding of the role of interface reaction between top metal electrode and titanium oxide layer, we investigated the effects of various top metals on the resistive switching in Metal/a-TiO2/Al devices. The top Al device with the highest oxygen affinity showed the best memory performance, which is attributed to the fast formation of interfacial layer (Al-Ti-O), as confirmed by high resolution transmission electron microscopy and electron dispersive spectroscopy. Hence, we concluded that the interface layer, created by the redox reaction between top metal electrode and TiO2 layer, plays a crucial role in bipolar resistive switching behaviors of metal/TiO2/Al systems.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Bipolar resistive switching in amorphous titanium oxide thin films

Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum electrodes. We found a bipolar resistive switching behavior in the high temperature region (> 140 K), and two activation energies of shallow traps, 0.055 eV and 0.126 eV in the ohmic current regime. We also proposed that the bipolar resistive switching of amorphous TiO2 thin films is governed by the transition of conduction mode from a bulk-limited SCLC model (Off state) to an interface-limited Schottky emission (On state), generated by the ionic movement of oxygen vacancies.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.

0 citations0 reviewsNo code linkedOpen access