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Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.

preprint2009arXivOpen access
Hu Young JeongJeong Yong LeeSung-Yool ChoiJeong Won Kim
cond-mat.mes-hallcond-mat.mtrl-sci
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Hu Young JeongJeong Yong LeeSung-Yool ChoiJeong Won Kim

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