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Haiyu Lu

Haiyu Lu contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Towards Fair Federated Recommendation Learning: Characterizing the Inter-Dependence of System and Data Heterogeneity

Federated learning (FL) is an effective mechanism for data privacy in recommender systems by running machine learning model training on-device. While prior FL optimizations tackled the data and system heterogeneity challenges faced by FL, they assume the two are independent of each other. This fundamental assumption is not reflective of real-world, large-scale recommender systems -- data and system heterogeneity are tightly intertwined. This paper takes a data-driven approach to show the inter-dependence of data and system heterogeneity in real-world data and quantifies its impact on the overall model quality and fairness. We design a framework, RF^2, to model the inter-dependence and evaluate its impact on state-of-the-art model optimization techniques for federated recommendation tasks. We demonstrate that the impact on fairness can be severe under realistic heterogeneity scenarios, by up to 15.8--41x compared to a simple setup assumed in most (if not all) prior work. It means when realistic system-induced data heterogeneity is not properly modeled, the fairness impact of an optimization can be downplayed by up to 41x. The result shows that modeling realistic system-induced data heterogeneity is essential to achieving fair federated recommendation learning. We plan to open-source RF^2 to enable future design and evaluation of FL innovations.

preprint2021arXiv

A Broken Translational Symmetry State in an Infinite-Layer Nickelate

A defining signature of strongly correlated electronic systems is the existence of competing phases with similar ground state energies, resulting in a rich phase diagram. While in the recently discovered nickelate superconductors, a high antiferromagnetic exchange energy has been reported, which implies the existence of strong electronic correlations, signatures of competing phases have not yet been observed. Here, we uncover a charge order (CO) in infinite-layer nickelates La1-xSrxNiO2 using resonant x-ray scattering across the Ni L-edge. In the parent compound, the CO arranges along the Ni-O bond direction with an incommensurate wave vector (0.344+/-0.002, 0) r.l.u., distinct from the stripe order in other nickelates which propagates along a direction 45 degree to the Ni-O bond. The CO resonance profile indicates that CO originates from the Ni 3d states and induces a parasitic charge modulation of La electrons. Upon doping, the CO diminishes and the ordering wave vector shifts toward a commensurate value of 1/3 r.l.u., indicating that the CO likely arises from strong correlation effects and not from Fermi surface nesting.

preprint2020arXiv

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Group-IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. Future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group-IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV$^-$) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV$^-$ centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.

preprint2020arXiv

Narrow-linewidth tin-vacancy centers in a diamond waveguide

Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV$^-$) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties including narrow-linewidth emission and long spin coherence times. SnV$^-$ centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV$^-$ centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for generation of high-quality SnV$^-$ centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV$^-$ centers (as narrow as $36\pm2$ MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV$^-$ centers under resonant excitation. Our results are an important step toward SnV$^-$-based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.