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Zhi-Xun Shen

Zhi-Xun Shen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conquant-phphysics.opticscond-mat.otherphysics.app-phphysics.comp-phphysics.ins-det

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Published work

58 published item(s)

preprint2023arXiv

Low-energy electrodynamics of infinite-layer nickelates: evidence for d-wave superconductivity in the dirty limit

The discovery of superconductivity in infinite-layer nickelates establishes a new category of unconventional superconductors that share structural and electronic similarities with cuprates. Despite exciting advances, such as the establishment of a cuprate-like phase diagram and the observation of charge order and short-range antiferromagnetic fluctuation, the key issues of superconducting pairing symmetry, gap amplitude, and superconducting fluctuation remain elusive. In this work, we utilize static and ultrafast terahertz spectroscopy to address these outstanding problems. We demonstrate that the equilibrium terahertz conductivity and nonequilibrium terahertz responses of an optimally Sr-doped nickelate film ($T_c$ = 17 K) are in line with the electrodynamics of $d$-wave superconductivity in the dirty limit. The gap-to-$T_c$ ratio 2$Δ/k_\mathrm{B}T_\mathrm{c}$ is extracted to be 3.4, indicating the superconductivity falls in the weak-coupling regime. In addition, we observed significant superconducting fluctuation near $T_\mathrm{c}$, while it does not extend into the deep normal state as optimally hole-doped cuprates. Our result highlights a new $d$-wave system which closely resembles the electron-doped cuprates, expanding the family of unconventional superconductivity in oxides.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Theory of the microwave impedance microscopy of Chern insulators

Microwave impedance microscopy (MIM) has been utilized to directly visualize topological edge states in many quantum materials, from quantum Hall systems to topological insulators, across the GHz regime. While the microwave response for conventional metals and insulators can be accurately quantified using simple lumped-element circuits, the applicability of these classical models to more exotic quantum systems remains limited. In this work, we present a general theoretical framework of the MIM response of arbitrary quantum materials within linear response theory. As a special case, we model the microwave response of topological edge states in a Chern insulator and predict an enhanced MIM response at the crystal boundaries due to collective edge magnetoplasmon (EMP) excitations. The resonance frequency of these plasmonic modes should depend quantitatively on the topological invariant of the Chern insulator state and on the sample's circumference, which highlights their non-local, topological nature. To benchmark our analytical predictions, we experimentally probe the MIM response of quantum anomalous Hall edge states in a Cr-doped (Bi,Sb)2Te3 topological insulator and perform numerical simulations using a classical formulation of the EMP modes based on this realistic tip-sample geometry, both of which yield results consistent with our theoretical picture. We also show how the technique of MIM can be used to quantitatively extract the topological invariant of a Chern insulator, disentangle the signatures of topological versus trivial edge states, and shed light on the microscopic nature of dissipation along the crystal boundaries.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic structure of superconducting nickelates probed by resonant photoemission spectroscopy

The discovery of infinite-layer nickelate superconductors has spurred enormous interest. While the Ni$^{1+}$ cations possess nominally the same 3$d^9$ configuration as Cu$^{2+}$ in cuprates, the electronic structure variances remain elusive. Here, we present a soft x-ray photoemission spectroscopy study on parent and doped infinite-layer Pr-nickelate thin films with a doped perovskite reference. By identifying the Ni character with resonant photoemission and comparison to density functional theory + U (on-site Coulomb repulsion energy) calculations, we estimate U ~5 eV, smaller than the charge transfer energy $Δ$ ~8 eV, confirming the Mott-Hubbard electronic structure in contrast to charge-transfer cuprates. Near the Fermi level ($E_F$), we observe a signature of occupied rare-earth states in the parent compound, which is consistent with a self-doping picture. Our results demonstrate a correlation between the superconducting transition temperature and the oxygen 2$p$ hybridization near $E_F$ when comparing hole-doped nickelates and cuprates.

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preprint2022arXiv

Large-gap insulating dimer ground state in monolayer IrTe2

Monolayers of two-dimensional van der Waals materials exhibit novel electronic phases distinct from their bulk due to the symmetry breaking and reduced screening in the absence of the interlayer coupling. In this work, we combine angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy to demonstrate the emergence of a unique insulating 2 x 1 dimer ground state in monolayer 1T-IrTe2 that has a large band gap in contrast to the metallic bilayer-to-bulk forms of this material. First-principles calculations reveal that phonon and charge instabilities as well as local bond formation collectively enhance and stabilize a charge-ordered ground state. Our findings provide important insights into the subtle balance of interactions having similar energy scales that occurs in the absence of strong interlayer coupling, which offers new opportunities to engineer the properties of 2D monolayers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nanodiamond grain boundaries and lattice expansion drive Silicon vacancy emission heterogeneity

Silicon-vacancy (SiV$^-$) centers in diamond are promising candidates as sources of single-photons in quantum networks due to their minimal phonon coupling and narrow optical linewidths. Correlating SiV$^-$ emission with the defect's atomic-scale structure is important for controlling and optimizing quantum emission, but remains an outstanding challenge. Here, we use cathodoluminescence imaging in a scanning transmission electron microscope (STEM) to elucidate the structural sources of non-ideality in the SiV$^-$ emission from nanodiamonds with sub-nanometer-scale resolution. We show that different crystalline domains of a nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness, while near-surface SiV$^-$ emitters remain bright. We correlate these changes with local lattice expansion using 4D STEM and diffraction, and show that associated blue shifts from the ZPL are due to defect density heterogeneity, while red shifts are due to lattice distortions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Thermal Hall conductivity of electron-doped cuprates

Measurements of the thermal Hall conductivity in hole-doped cuprates have shown that phonons acquire chirality in a magnetic field, both in the pseudogap phase and in the Mott insulator state. The microscopic mechanism at play is still unclear. A number of theoretical proposals are being considered, including skew scattering of phonons by various defects, the coupling of phonons to spins, and a state of loop-current order with the appropriate symmetries, but more experimental information is required to constrain theoretical scenarios. Here we present our study of the thermal Hall conductivity $κ_{\rm {xy}}$ in the electron-doped cuprates Nd$_{2-x}$Ce$_x$CuO$_4$ and Pr$_{2-x}$Ce$_x$CuO$_4$, for dopings across the phase diagram, from $x$ = 0, in the insulating antiferromagnetic phase, up to $x$ = 0.17, in the metallic phase above optimal doping. We observe a large negative thermal Hall conductivity at all dopings, in both materials. Since heat conduction perpendicular to the CuO$_2$ planes is dominated by phonons, the large thermal Hall conductivity we observe in electron-doped cuprates for a heat current in that direction must also be due to phonons, as in hole-doped cuprates. Measurements with a heat current perpendicular to the CuO$_2$ planes confirm that phonons are responsible for this thermal Hall signal, as in hole-doped cuprates. However, the degree of chirality, measured as the ratio $|κ_{\rm {xy}}$ / $κ_{\rm {xx}} |$, where $κ_{\rm {xx}}$ is the longitudinal thermal conductivity, is much larger in the electron-doped cuprates. We discuss various factors that may be involved in the mechanism that confers chirality to phonons in cuprates, including short-range spin correlations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A Broken Translational Symmetry State in an Infinite-Layer Nickelate

A defining signature of strongly correlated electronic systems is the existence of competing phases with similar ground state energies, resulting in a rich phase diagram. While in the recently discovered nickelate superconductors, a high antiferromagnetic exchange energy has been reported, which implies the existence of strong electronic correlations, signatures of competing phases have not yet been observed. Here, we uncover a charge order (CO) in infinite-layer nickelates La1-xSrxNiO2 using resonant x-ray scattering across the Ni L-edge. In the parent compound, the CO arranges along the Ni-O bond direction with an incommensurate wave vector (0.344+/-0.002, 0) r.l.u., distinct from the stripe order in other nickelates which propagates along a direction 45 degree to the Ni-O bond. The CO resonance profile indicates that CO originates from the Ni 3d states and induces a parasitic charge modulation of La electrons. Upon doping, the CO diminishes and the ordering wave vector shifts toward a commensurate value of 1/3 r.l.u., indicating that the CO likely arises from strong correlation effects and not from Fermi surface nesting.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Correlated Hofstadter Spectrum and Flavor Phase Diagram in Magic Angle Graphene

In magic angle twisted bilayer graphene (MATBG), the moiré superlattice potential gives rise to narrow electronic bands1 which support a multitude of many-body quantum phases. Further richness arises in the presence of a perpendicular magnetic field, where the interplay between moiré and magnetic length scales leads to fractal Hofstadter subbands. In this strongly correlated Hofstadter platform, multiple experiments have identified gapped topological and correlated states, but little is known about the phase transitions between them in the intervening compressible regimes. Here, using a scanning single-electron transistor microscope to measure local electronic compressibility, we simultaneously unveil novel sequences of broken-symmetry Chern insulators (CIs) and resolve sharp phase transitions between competing states with different topological quantum numbers and spin/valley flavor occupations. Our measurements provide a complete experimental mapping of the energy spectrum and thermodynamic phase diagram of interacting Hofstadter subbands in MATBG. In addition, we observe full lifting of the degeneracy of the zeroth Landau levels (zLLs) together with level crossings, indicating moiré valley splitting. We propose a unified flavor polarization mechanism to understand the intricate interplay of topology, interactions, and symmetry breaking as a function of density and applied magnetic field in this system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magic Doping and Robust Superconductivity in Monolayer FeSe on Titanates

The enhanced superconductivity in monolayer FeSe on titanates opens a fascinating pathway towards the rational design of high-temperature superconductors. Utilizing the state-of-the-art oxide plus chalcogenide molecular beam epitaxy systems in situ connected to a synchrotron angle-resolved photoemission spectroscope, epitaxial LaTiO3 layers with varied atomic thicknesses are inserted between monolayer FeSe and SrTiO3, for systematic modulation of interfacial chemical potential.With the dramatic increase of electron accumulation at the LaTiO3-SrTiO3 surface, providing a substantial surge of work function mismatch across the FeSe-oxide interface, the charge transfer and the superconducting gap in the monolayer FeSe are found to remain markedly robust. This unexpected finding indicates the existence of an intrinsically anchored magic doping within the monolayer FeSe systems.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Moiré Imaging in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride

Moiré superlattices (MSL) formed in angle-aligned bilayers of van der Waals materials have become a promising platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures can form two sets of MSLs which could potentially interfere with each other. In this work, we directly image the moiré patterns in both monolayer graphene aligned on hBN and twisted bilayer graphene aligned on hBN, using combined scanning microwave impedance microscopy and conductive atomic force microscopy. Correlation of the two techniques reveals the contrast mechanism for the achieved ultrahigh spatial resolution (<2 nm). We observe two sets of MSLs with different periodicities in the trilayer stack. The smaller MSL breaks the 6-fold rotational symmetry and exhibits abrupt discontinuities at the boundaries of the larger MSL. Using a rigid atomic-stacking model, we demonstrate that the hBN layer considerably modifies the MSL of twisted bilayer graphene. We further analyze its effect on the reciprocal space spectrum of the dual-moiré system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unconventional hysteretic transition in a charge density wave

Hysteresis underlies a large number of phase transitions in solids, giving rise to exotic metastable states that are otherwise inaccessible. Here, we report an unconventional hysteretic transition in a quasi-2D material, EuTe4. By combining transport, photoemission, diffraction, and x-ray absorption measurements, we observed that the hysteresis loop has a temperature width of more than 400 K, setting a record among crystalline solids. The transition has an origin distinct from known mechanisms, lying entirely within the incommensurate charge-density-wave (CDW) phase of EuTe4 with no change in the CDW modulation periodicity. We interpret the hysteresis as an unusual switching of the relative CDW phases in different layers, a phenomenon unique to quasi-2D compounds that is not present in either purely 2D or strongly-coupled 3D systems. Our findings challenge the established theories on metastable states in density wave systems, pushing the boundary of understanding hysteretic transitions in a broken-symmetry state.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Group-IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. Future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group-IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV$^-$) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV$^-$ centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metallic surface states in a correlated d-electron topological Kondo insulator candidate FeSb2

The resistance of a conventional insulator diverges as temperature approaches zero. The peculiar low temperature resistivity saturation in the 4f Kondo insulator (KI) SmB6 has spurred proposals of a correlation-driven topological Kondo insulator (TKI) with exotic ground states. However, the scarcity of model TKI material families leaves difficulties in disentangling key ingredients from irrelevant details. Here we use angle-resolved photoemission spectroscopy (ARPES) to study FeSb2, a correlated d-electron KI candidate that also exhibits a low temperature resistivity saturation. On the (010) surface, we find a rich assemblage of metallic states with two-dimensional dispersion. Measurements of the bulk band structure reveal band renormalization, a large temperature-dependent band shift, and flat spectral features along certain high symmetry directions, providing spectroscopic evidence for strong correlations. Our observations suggest that exotic insulating states resembling those in SmB6 and YbB12 may also exist in systems with d instead of f electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Narrow-linewidth tin-vacancy centers in a diamond waveguide

Integrating solid-state quantum emitters with photonic circuits is essential for realizing large-scale quantum photonic processors. Negatively charged tin-vacancy (SnV$^-$) centers in diamond have emerged as promising candidates for quantum emitters because of their excellent optical and spin properties including narrow-linewidth emission and long spin coherence times. SnV$^-$ centers need to be incorporated in optical waveguides for efficient on-chip routing of the photons they generate. However, such integration has yet to be realized. In this Letter, we demonstrate the coupling of SnV$^-$ centers to a nanophotonic waveguide. We realize this device by leveraging our recently developed shallow ion implantation and growth method for generation of high-quality SnV$^-$ centers and the advanced quasi-isotropic diamond fabrication technique. We confirm the compatibility and robustness of these techniques through successful coupling of narrow-linewidth SnV$^-$ centers (as narrow as $36\pm2$ MHz) to the diamond waveguide. Furthermore, we investigate the stability of waveguide-coupled SnV$^-$ centers under resonant excitation. Our results are an important step toward SnV$^-$-based on-chip spin-photon interfaces, single-photon nonlinearity, and photon-mediated spin interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum well states in fractured crystals of the heavy fermion material CeCoIn$_5$

Quantum well states appear in metallic thin films due to the confinement of the wave function by the film interfaces. Using angle-resolved photoemission spectroscopy, we unexpectedly observe quantum well states in fractured single crystals of CeCoIn$_5$. We confirm that confinement occurs by showing that these states' binding energies are photon-energy independent and are well described with a phase accumulation model, commonly applied to quantum well states in thin films. This indicates that atomically flat thin films can be formed by fracturing hard single crystals. For the two samples studied, our observations are explained by free-standing flakes with thicknesses of 206 and 101 Å. We extend our analysis to extract bulk properties of CeCoIn$_5$. Specifically, we obtain the dispersion of a three-dimensional band near the zone center along in-plane and out-of-plane momenta. We establish part of its Fermi surface, which corresponds to a hole pocket centered at $Γ$. We also reveal a change of its dispersion with temperature, a signature that may be caused by the Kondo hybridization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning time and energy resolution in time-resolved photoemission spectroscopy with nonlinear crystals

Time- and angle-resolved photoemission spectroscopy is a powerful probe of electronic band structures out of equilibrium. Tuning time and energy resolution to suit a particular scientific question has become an increasingly important experimental consideration. Many instruments use cascaded frequency doubling in nonlinear crystals to generate the required ultraviolet probe pulses. We demonstrate how calculations clarify the relationship between laser bandwidth and nonlinear crystal thickness contributing to experimental resolutions and place intrinsic limits on the achievable time-bandwidth product. Experimentally, we tune time and energy resolution by varying the thickness of nonlinear $β$-BaB$_2$O$_4$ crystals for frequency up-conversion, providing for a flexible experiment design. We achieve time resolutions of 58 to 103 fs and corresponding energy resolutions of 55 to 27 meV.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Visualization of multifractal superconductivity in a two-dimensional transition metal dichalcogenide in the weak-disorder regime

Eigenstate multifractality is a distinctive feature of non-interacting disordered metals close to a metal-insulator transition, whose properties are expected to extend to superconductivity. While multifractality in three dimensions (3D) only develops near the critical point for specific strong-disorder strengths, multifractality in 2D systems is expected to be observable even for weak disorder. Here we provide evidence for multifractal features in the superconducting state of an intrinsic weakly disordered single-layer NbSe$_2$ by means of low-temperature scanning tunneling microscopy/spectroscopy. The superconducting gap, characterized by its width, depth and coherence peaks' amplitude, shows a characteristic spatial modulation coincident with the periodicity of the quasiparticle interference pattern. Spatial inhomogeneity of the superconducting gap width, proportional to the local order parameter in the weak-disorder regime, follows a log-normal statistical distribution as well as a power-law decay of the two-point correlation function, in agreement with our theoretical model. Furthermore, the experimental singularity spectrum f($α$) shows anomalous scaling behavior typical from 2D weakly disordered systems.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Anomalous Hall Effect in ZrTe5

ZrTe$_5$ has been of recent interest as a potential Dirac/Weyl semimetal material. Here, we report the results of experiments performed via in-situ 3D double-axis rotation to extract the full $4π$ solid angular dependence of the transport properties. A clear anomalous Hall effect (AHE) was detected for every sample, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry. Interestingly, the AHE takes large values when the magnetic field is rotated in-plane, with the values vanishing above $\sim 60$ K where the negative longitudinal magnetoresistance (LMR) also disappears. This suggests a close relation in their origins, which we attribute to Berry curvature generated by the Weyl nodes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)

SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular tothe (111) surface, demonstrate the projected Dirac cones at the Gamma_bar and M_bar points of the surface Brillouinzone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone,whose Dirac energy is largely different from those at the Gamma_bar and M_bar points.

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preprint2016arXiv

Direct Imaging of Dynamic Glassy Behavior in a Strained Manganite Film

Complex many-body interaction in perovskite manganites gives rise to a strong competition between ferromagnetic metallic and charge ordered phases with nanoscale electronic inhomogeneity and glassy behaviors. Investigating this glassy state requires high resolution imaging techniques with sufficient sensitivity and stability. Here, we present the results of a near-field microwave microscope imaging on the strain driven glassy state in a manganite film. The high contrast between the two electrically distinct phases allows direct visualization of the phase separation. The low temperature microscopic configurations differ upon cooling with different thermal histories. At sufficiently high temperatures, we observe switching between the two phases in either direction. The dynamic switching, however, stops below the glass transition temperature. Compared with the magnetization data, the phase separation was microscopically frozen, while spin relaxation was found in a short period of time.

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preprint2016arXiv

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy (MBE). The combination of angle-resolved photoemission (ARPES), scanning tunneling microscopy/spectroscopy (STM/STS), and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional 3D semiconductors, yet small as compared to other 2D transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.

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preprint2016arXiv

Picosecond electric-field-induced threshold switching in phase-change materials

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag$_4$In$_3$Sb$_{67}$Te$_{26}$. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on sub-picosecond time-scales - faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

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preprint2016arXiv

Spin-Polarized Surface Resonances Accompanying Topological Surface State Formation

Topological insulators host spin-polarized surface states born out of the energetic inversion of bulk bands driven by the spin-orbit interaction. Here we discover previously unidentified consequences of band-inversion on the surface electronic structure of the topological insulator Bi$_2$Se$_3$. By performing simultaneous spin, time, and angle-resolved photoemission spectroscopy, we map the spin-polarized unoccupied electronic structure and identify a surface resonance which is distinct from the topological surface state, yet shares a similar spin- orbital texture with opposite orientation. Its momentum- dependence and spin texture imply an intimate connection with the topological surface state. Calculations show these two distinct states can emerge from trivial Rashba-like states that change topology through the spin-orbit-induced band inversion. This work thus provides a compelling view of the coevolution of surface states through a topological phase transition, enabled by the unique capability of directly measuring the spin-polarized unoccupied band structure.

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preprint2016arXiv

Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices

We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly, a comparison of these measurements reveals that quantized transport typically occurs below the complete filling of bulk Landau levels, when the bulk is still conductive. This result points to a revised understanding of transport quantization when carriers are accumulated by gating. We discuss the implications on transport study of the quantum Hall effect in graphene and related topological states in other two-dimensional electron systems.

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preprint2015arXiv

Characterization of collective ground states in single-layer NbSe2

Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of Δ = 4 meV at the Fermi energy, which is accessible via STS due to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing new insight into CDW formation and superconductivity in this model strongly-correlated system.

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preprint2015arXiv

Energy gaps in high-transition temperature cuprate superconductors

The spectral energy gap is an important signature that defines states of quantum matter: insulators, density waves, and superconductors have very different gap structures. The momentum resolved nature of angle-resolved photoemission spectroscopy (ARPES) makes it a powerful tool to characterize spectral gaps. ARPES has been instrumental in establishing the anisotropic d-wave structure of the superconducting gap in high-transition temperature (Tc) cuprates, which is different from the conventional isotropic s-wave superconducting gap. Shortly afterwards, ARPES demonstrated that an anomalous gap above Tc, often termed the pseudogap, follows a similar anisotropy. The nature of this poorly understood pseudogap and its relationship with superconductivity has since become the focal point of research in the field. To address this issue, the momentum, temperature, doping, and materials dependence of spectral gaps have been extensively examined with significantly improved instrumentation and carefully matched experiments in recent years. This article overviews the current understanding and unresolved issues of the basic phenomenology of gap hierarchy. We show how ARPES has been sensitive to phase transitions, has distinguished between orders having distinct broken electronic symmetries, and has uncovered rich momentum and temperature dependent fingerprints reflecting an intertwined & competing relationship between the ordered states and superconductivity that results in multiple phenomenologically-distinct ground states inside the superconducting dome. These results provide us with microscopic insights into the cuprate phase diagram.

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preprint2015arXiv

Experimental Observation of Incoherent-Coherent Crossover and Orbital Dependent Band Renormalization in Iron Chalcogenide Superconductors

The level of electronic correlation has been one of the key questions in understanding the nature of superconductivity. Among the iron-based superconductors, the iron chalcogenide family exhibits the strongest electron correlations. To gauge the correlation strength, we performed systematic angle-resolved photoemission spectroscopy study on the iron chalcogenide series Fe$_{1+y}$Se$_x$Te$_{1-x}$ (0$<$x$<$0.59), a model system with the simplest structure. Our measurement reveals an incoherent to coherent crossover in the electronic structure as the selenium ratio increases and the system evolves from the weakly localized to more itinerant state. Furthermore, we found that the effective mass of bands dominated by the d$_{xy}$ orbital character significantly decreases with increasing selenium ratio, as compared to the d$_{xz}$/d$_{yz}$ orbital-dominated bands. The orbital dependent change in the correlation level agrees with theoretical calculations on the band structure renormalization, and may help to understand the onset of superconductivity in Fe$_{1+y}$Se$_x$Te$_{1-x}$.

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preprint2015arXiv

Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV$^-$ on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV$^-$ centers. Scanning confocal photoluminescence measurements reveal optically active SiV$^-$ lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV$^-$ centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

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preprint2015arXiv

Inequivalence of Single-Particle and Population Lifetimes in a Cuprate Superconductor

We study optimally doped Bi-2212 ($T_\textrm{c}=96$~K) using femtosecond time- and angle-resolved photoelectron spectroscopy. Energy-resolved population lifetimes are extracted and compared with single-particle lifetimes measured by equilibrium photoemission. The population lifetimes deviate from the single-particle lifetimes in the low excitation limit by one to two orders of magnitude. Fundamental considerations of electron scattering unveil that these two lifetimes are in general distinct, yet for systems with only electron-phonon scattering they should converge in the low-temperature, low-fluence limit. The qualitative disparity in our data, even in this limit, suggests that scattering channels beyond electron-phonon interactions play a significant role in the electron dynamics of cuprate superconductors.

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preprint2015arXiv

Observation of universal strong orbital-dependent correlation effects in iron chalcogenides

Establishing the appropriate theoretical framework for unconventional superconductivity in the iron-based materials requires correct understanding of both the electron correlation strength and the role of Fermi surfaces. This fundamental issue becomes especially relevant with the discovery of the iron chalcogenide (FeCh) superconductors, the only iron-based family in proximity to an insulating phase. Here, we use angle-resolved photoemission spectroscopy (ARPES) to measure three representative FeCh superconductors, FeTe0.56Se0.44, K0.76Fe1.72Se2, and monolayer FeSe film grown on SrTiO3. We show that, these FeChs are all in a strongly correlated regime at low temperatures, with an orbital-selective strong renormalization in the dxy bands despite having drastically different Fermi-surface topologies. Furthermore, raising temperature brings all three compounds from a metallic superconducting state to a phase where the dxy orbital loses all spectral weight while other orbitals remain itinerant. These observations establish that FeChs display universal orbital-selective strong correlation behaviors that are insensitive to the Fermi surface topology, and are close to an orbital-selective Mott phase (OSMP), hence placing strong constraints for theoretical understanding of iron-based superconductors.

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preprint2015arXiv

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures, and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.

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preprint2015arXiv

Thickness-Dependent Coherent Phonon Frequency in Ultrathin FeSe/SrTiO$_{3}$ Films

Ultrathin FeSe films grown on SrTiO$_{3}$ substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. Using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO$_{3}$ films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump-probe delay for 1 unit cell, 3 unit cell, and 60 unit cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00(2) to 5.25(2) THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A$_\textrm{1g}$ phonon. The dominant mechanism for the phonon softening in 1 unit cell thick FeSe films is a substrate-induced lattice strain. Our results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.

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preprint2015arXiv

Unexpected edge conduction in HgTe quantum wells under broken time reversal symmetry

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating bulk, as demonstrated in various experiments. A key prediction of QSH theory that remains to be experimentally verified is the breakdown of the edge conduction under broken time reversal symmetry (TRS). Here we first establish a rigorous framework for understanding the magnetic field dependence of electrostatically gated QSH devices. We then report unexpected edge conduction under broken TRS, using a unique cryogenic microwave impedance microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure. At zero magnetic field and low carrier densities, clear edge conduction is observed in the local conductivity profile of this device but not in the 5.5 nm control device whose band structure is trivial. Surprisingly, the edge conduction in the 7.5 nm device persists up to 9 T with little effect from the magnetic field. This indicates physics beyond simple QSH models, possibly associated with material- specific properties, other symmetry protection and/or electron-electron interactions.

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preprint2014arXiv

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery of a large enhancement in photoluminescence quantum efficiency and a potential route to valleytronics in atomically thin layers of transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to the indirect to direct bandgap transition in monolayers. Here, we report the first direct observation of the transition from indirect to direct bandgap in monolayer samples by using angle resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy. The band structure measured experimentally indicates a stronger tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap size, than theoretically predicted. Moreover, our finding of a significant spin-splitting of 180 meV at the valence band maximum of a monolayer MoSe2 film could expand its possible application to spintronic devices.

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preprint2014arXiv

Direct spectroscopic evidence for phase competition between the pseudogap and superconductivity in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$

In the high-temperature ($T_{c}$) cuprate superconductors, increasing evidence suggests that the pseudogap, existing below the pseudogap temperature $T$*, has a distinct broken electronic symmetry from that of superconductivity. Particularly, recent scattering experiments on the underdoped cuprates have suggested that a charge ordering competes with superconductivity. However, no direct link of this physics and the important low-energy excitations has been identified. Here we report an antagonistic singularity at $T_{c}$ in the spectral weight of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ as a compelling evidence for phase competition, which persists up to a high hole concentration $p$ ~ 0.22. Comparison with a theoretical calculation confirms that the singularity is a signature of competition between the order parameters for the pseudogap and superconductivity. The observation of the spectroscopic singularity at finite temperatures over a wide doping range provides new insights into the nature of the competitive interplay between the two intertwined phases and the complex phase diagram near the pseudogap critical point.

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preprint2014arXiv

Distinguishing bulk and surface electron-phonon coupling in the topological insulator Bi2Se3 using time-resolved photoemission spectroscopy

We report time- and angle-resolved photoemission spectroscopy measurements on the topological insulator Bi2Se3. We observe oscillatory modulations of the electronic structure of both the bulk and surface states at a frequency of 2.23 THz due to coherent excitation of an A1g phonon mode. A distinct, additional frequency of 2.05 THz is observed in the surface state only. The lower phonon frequency at the surface is attributed to the termination of the crystal and thus reduction of interlayer van der Waals forces, which serve as restorative forces for out-of-plane lattice distortions. DFT calculations quantitatively reproduce the magnitude of the surface phonon softening. These results represent the first band-resolved evidence of the A1g phonon mode coupling to the surface state in a topological insulator.

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preprint2014arXiv

Ultrafast Electron Dynamics in the Topological Insulator Bi2Se3 Studied by Time-Resolved Photoemission Spectroscopy

We characterize the topological insulator Bi$_2$Se$_3$ using time- and angle- resolved photoemission spectroscopy. By employing two-photon photoemission, a complete picture of the unoccupied electronic structure from the Fermi level up to the vacuum level is obtained. We demonstrate that the unoccupied states host a second, Dirac surface state which can be resonantly excited by 1.5 eV photons. We then study the ultrafast relaxation processes following optical excitation. We find that they culminate in a persistent non-equilibrium population of the first Dirac surface state, which is maintained by a meta-stable population of the bulk conduction band. Finally, we perform a temperature-dependent study of the electron-phonon scattering processes in the conduction band, and find the unexpected result that their rates decrease with increasing sample temperature. We develop a model of phonon emission and absorption from a population of electrons, and show that this counter-intuitive trend is the natural consequence of fundamental electron-phonon scattering processes. This analysis serves as an important reminder that the decay rates extracted by time-resolved photoemission are not in general equal to single electron scattering rates, but include contributions from filling and emptying processes from a continuum of states.

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preprint2013arXiv

Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging

This paper presents the design and fabrication of batch-processed cantilever probes with electrical shielding for scanning microwave impedance microscopy. The diameter of the tip apex, which defines the electrical resolution, is less than 50 nm. The width of the stripline and the thicknesses of the insulation dielectrics are optimized for a small series resistance (< 5 W) and a small background capacitance (~ 1 pF), both critical for high sensitivity imaging on various samples. The coaxial shielding ensures that only the probe tip interacts with the sample. The structure of the cantilever is designed to be symmetric to balance the stresses and thermal expansions of different layers so that the cantilever remains straight under variable temperatures. Such shielded cantilever probes produced in the wafer scale will facilitate enormous applications on nanoscale dielectric and conductivity imaging.

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preprint2013arXiv

Direct Optical Coupling to an Unoccupied Dirac Surface State in the Topological Insulator Bi$_2$Se$_3$

We characterize the occupied and unoccupied electronic structure of the topological insulator Bi$_2$Se$_3$ by one-photon and two-photon angle-resolved photoemission spectroscopy and slab band structure calculations. We reveal a second, unoccupied Dirac surface state with similar electronic structure and physical origin to the well-known topological surface state. This state is energetically located 1.5 eV above the conduction band, which permits it to be directly excited by the output of a Ti:Sapphire laser. This discovery demonstrates the feasibility of direct ultrafast optical coupling to a topologically protected, spin-textured surface state.

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preprint2013arXiv

Electron propagation from a photo-excited surface: implications for time-resolved photoemission

We perform time- and angle-resolved photoelectron spectroscopy on p-type GaAs(110). We observe an optically excited population in the conduction band, from which the time scales of intraband relaxation and surface photovoltage decay are both extracted. Moreover, the photovoltage shift of the valence band intriguingly persists for hundreds of picoseconds at negative delays. By comparing to a recent theoretical study, we reveal that the negative-delay dynamics reflects the interaction of the photoelectrons with a photovoltage-induced electric field outside the sample surface. We develop a conceptual framework to disentangle the intrinsic electron dynamics from this long-range field effect, which sets the foundation for understanding time-resolved photoemission experiments on a broad range of materials in which poor electronic screening leads to surface photovoltage. Finally, we demonstrate how the long-lasting negative-delay dynamics in GaAs can be utilized to conveniently establish the temporal overlap of pump and probe pulses in a time-resolved photoemission setup.

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preprint2013arXiv

Electronic Structure of the Metallic Antiferromagnet PdCrO$_2$ Measured by Angle-Resolved Photoemission Spectroscopy

PdCrO$_2$ is material which has attracted interest due to the coexistence of metallic conductivity associated with itinerant Pd 4d electrons and antiferromagnetic order arising from localized Cr spins. A central issue is determining to what extent the magnetic order couples to the conduction electrons. Here we perform angle-resolved photoemission spectroscopy (ARPES) to experimentally characterize the electronic structure. We find that the Fermi surface has contributions from both bulk and surface states, which can be experimentally distinguished and theoretically verified by slab band structure calculations. The bulk Fermi surface shows no signature of electronic reconstruction in the antiferromagnetic state. This observation suggests that there is negligible interaction between the localized Cr spin structure and the itinerant Pd electrons measured by ARPES.

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preprint2013arXiv

Examining electron-boson coupling using time-resolved spectroscopy

Nonequilibrium pump-probe time domain spectroscopies can become an important tool to disentangle degrees of freedom whose coupling leads to broad structures in the frequency domain. Here, using the time-resolved solution of a model photoexcited electron-phonon system we show that the relaxational dynamics are directly governed by the equilibrium self-energy so that the phonon frequency sets a window for "slow" versus "fast" recovery. The overall temporal structure of this relaxation spectroscopy allows for a reliable and quantitative extraction of the electron-phonon coupling strength without requiring an effective temperature model or making strong assumptions about the underlying bare electronic band dispersion.

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preprint2012arXiv

Measurement of Coherent Polarons in the Strongly Coupled Antiferromagnetically Ordered Iron-Chalcogenide Fe1.02Te using Angle-Resolved Photoemission Spectroscopy

The nature of metallicity and the level of electronic correlations in the antiferromagnetically ordered parent compounds are two important open issues for the iron-based superconductivity. We perform a temperature-dependent angle-resolved photoemission spectroscopy study of Fe1.02Te, the parent compound for iron chalcogenide superconductors. Deep in the antiferromagnetic state, the spectra exhibit a "peak-dip-hump" line shape associated with two clearly separate branches of dispersion, characteristics of polarons seen in manganites and lightly-doped cuprates. As temperature increases towards the Neel temperature (T_N), we observe a decreasing renormalization of the peak dispersion and a counterintuitive sharpening of the hump linewidth, suggestive of an intimate connection between the weakening electron-phonon (e-ph) coupling and antiferromagnetism. Our finding points to the highly-correlated nature of Fe1.02Te ground state featured by strong interactions among the charge, spin and lattice and a good metallicity plausibly contributed by the coherent polaron motion.

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preprint2012arXiv

Observation of Temperature-Induced Crossover to an Orbital-Selective Mott Phase in A$_{x}$Fe$_{2-y}$Se$_2$ (A=K, Rb) Superconductors

In this work, we study the A$_{x}$Fe$_{2-y}$Se$_2$ (A=K, Rb) superconductors using angle-resolved photoemission spectroscopy. In the low temperature state, we observe an orbital-dependent renormalization for the bands near the Fermi level in which the dxy bands are heavily renormliazed compared to the dxz/dyz bands. Upon increasing temperature to above 150K, the system evolves into a state in which the dxy bands have diminished spectral weight while the dxz/dyz bands remain metallic. Combined with theoretical calculations, our observations can be consistently understood as a temperature induced crossover from a metallic state at low temperature to an orbital-selective Mott phase (OSMP) at high temperatures. Furthermore, the fact that the superconducting state of A$_{x}$Fe$_{2-y}$Se$_2$ is near the boundary of such an OSMP constraints the system to have sufficiently strong on-site Coulomb interactions and Hund's coupling, and hence highlight the non-trivial role of electron correlation in this family of iron superconductors.

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preprint2012arXiv

Pseudogap, Superconducting Gap, and Fermi Arc in High-Tc Cuprates Revealed by Angle-Resolved Photoemission Spectroscopy

We present an overview of angle-resolved photoemission spectroscopy (ARPES) studies of high-temperature cuprate superconductors aiming at elucidating the relationship between the superconductivity, the pseudogap, and the Fermi arc. ARPES studies of underdoped samples show a momentum dependence of the energy gap below Tc which deviates from a simple d-wave form, suggesting the coexistence of multiple energy scales in the superconducting state. Hence, two distinct energy scales have been introduced, namely, the gap near the node (characterized by Delta_0) and in the anti-nodal region (characterized by Delta^*). Dichotomy between them has been demonstrated from the material, doping, and temperature dependence of the energy gap. While Delta^* at the same doping level is approximately material independent, Delta_0 shows a strong material dependence tracking the magnitude of Tc,max. The anti-nodal gap does not close at Tc in contrast to the gap near the node which follows something closer to a BCS-like temperature dependence. An effective superconducting gap Delta_sc defined at the end point of the Fermi arc is found to be proportional to Tc's in various materials.

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preprint2012arXiv

Unexpected Surface Implanted Layer in Static Random Access Memory Devices Observed by Microwave Impedance Microscope

Real-space mapping of doping concentration in semiconductor devices is of great importance for the microelectronic industry. In this work, a scanning microwave impedance microscope (MIM) is employed to resolve the local conductivity distribution of a static random access memory (SRAM) sample. The MIM electronics can also be adjusted to the scanning capacitance microscopy (SCM) mode, allowing both measurements on the same region. Interestingly, while the conventional SCM images match the nominal device structure, the MIM results display certain unexpected features, which originate from a thin layer of the dopant ions penetrating through the protective layers during the heavy implantation steps.

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preprint2011arXiv

Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3

Topological insulators represent a new state of quantum matter attractive to both fundamental physics and technological applications such as spintronics and quantum information processing. In a topological insulator, the bulk energy gap is traversed by spin-momentum locked surface states forming an odd number of surface bands that possesses unique electronic properties. However, transport measurements have often been dominated by residual bulk carriers from crystal defects or environmental doping which mask the topological surface contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological insulator system to manipulate bulk conductivity by varying the Bi/Sb composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as topological insulators for the entire composition range by angle resolved photoemission spectroscopy (ARPES) measurements and ab initio calculations. Additionally, we observe a clear ambipolar gating effect similar to that observed in graphene using nanoplates of (BixSb1-x)2Te3 in field-effect-transistor (FET) devices. The manipulation of carrier type and concentration in topological insulator nanostructures demonstrated in this study paves the way for implementation of topological insulators in nanoelectronics and spintronics.

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preprint2011arXiv

Cryogenic Microwave Imaging of Metal-Insulator Transition in Doped Silicon

We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semi-quantitative finite-element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and DC biases.

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preprint2011arXiv

Imaging of the Coulomb driven quantum Hall edge states

The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic Coulomb interaction. Local probing of these submicrometer features, however, is challenging due to the buried 2DEG structures. Using a newly developed microwave impedance microscope, we demonstrate the real-space conductivity mapping of the edge and bulk states. The sizes, positions, and field dependence of the edge strips around the sample perimeter agree quantitatively with the self-consistent electrostatic picture. The evolution of microwave images as a function of magnetic fields provides rich microscopic information around the ν= 2 QHE state.

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preprint2011arXiv

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements.

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preprint2011arXiv

Widespread spin polarization effects in photoemission from topological insulators

High resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi$_2$Se$_3$ using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

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preprint2010arXiv

Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy

Ultra-thin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak Van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (> 50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultra-thin nanoribbons, showing drastic difference in sheet resistance between 1~2 QLs and 4~5 QLs. Transport measurement carried out on an exfoliated (\leq 5 QLs) Bi2Se3 device shows non-metallic temperature dependence of resistance, in sharp contrast to the metallic behavior seen in thick (> 50 QLs) ribbons. These AFM-exfoliated thin nanoribbons afford interesting candidates for studying the transition from quantum spin Hall surface to edge states.

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preprint2009arXiv

Aharonov-Bohm interference in topological insulator nanoribbons

Topological insulators represent novel phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface and verified by angle-resolved photoemission spectroscopy experiments. Here, we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2Se3 nanoribbons. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coverage of two-dimensional electrons on the entire surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation and its temperature dependence demonstrate the robustness of these electronic states. Our results suggest that topological insulator nanoribbons afford novel promising materials for future spintronic devices at room temperature.

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preprint2009arXiv

Hierarchy of Electronic Properties of Chemically Derived and Pristine Graphene Probed by Microwave Imaging

Local electrical imaging using microwave impedance microscope is performed on graphene in different modalities, yielding a rich hierarchy of the local conductivity. The low-conductivity graphite oxide and its derivatives show significant electronic inhomogeneity. For the conductive chemical graphene, the residual defects lead to a systematic reduction of the microwave signals. In contrast, the signals on pristine graphene agree well with a lumped-element circuit model. The local impedance information can also be used to verify the electrical contact between overlapped graphene pieces.

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preprint2009arXiv

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near multiphase boundaries. As vividly demonstrated in complex metal oxides and chalcogenides, these microscopic phases are of great scientific and technological importance for research in high-temperature superconductors, colossal magnetoresistance effect, phase-change memories, and domain switching operations. Direct imaging on dielectric properties of these local phases, however, presents a big challenge for existing scanning probe techniques. Here, we report the observation of electronic inhomogeneity in indium selenide (In2Se3) nanoribbons by near-field scanning microwave impedance microscopy. Multiple phases with local resistivity spanning six orders of magnitude are identified as the coexistence of superlattice, simple hexagonal lattice and amorphous structures with 100nm inhomogeneous length scale, consistent with high-resolution transmission electron microscope studies. The atomic-force-microscope-compatible microwave probe is able to perform quantitative sub-surface electronic study in a noninvasive manner. Finally, the phase change memory function in In2Se3 nanoribbon devices can be locally recorded with big signal of opposite signs.

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preprint2009arXiv

Topological Insulator Nanowires and Nanoribbons

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se3 nanomaterials with a variety of morphologies. The synthesis of Bi2Se3 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ~ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

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preprint2008arXiv

Energy gaps in the failed high-Tc superconductor La1.875Ba0.125CuO4

A central issue on high-Tc superconductivity is the nature of the normal-state gap (pseudogap) in the underdoped regime and its relationship with superconductivity. Despite persistent efforts, theoretical ideas for the pseudogap evolve around fluctuating superconductivity, competing order and spectral weight suppression due to many-body effects. Recently, while some experiments in the superconducting state indicate a distinction between the superconducting gap and pseudogap, others in the normal state, either by extrapolation from high-temperature data or directly from La1.875Ba0.125CuO4 (LBCO-1/8) at low temperature, suggest the ground-state pseudogap is a single gap of d-wave form. Here we report angle-resolved photoemission (ARPES) data from LBCO-1/8, collected with improved experimental conditions, that reveal the ground-state pseudogap has a pronounced deviation from the simple d-wave form. It contains two distinct components: a d-wave component within an extended region around the node and the other abruptly enhanced close to the antinode, pointing to a dual nature of the pseudogap in this failed high-Tc superconductor which involves a possible precursor pairing energy scale around the node and another of different but unknown origin near the antinode.

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