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H. -S. Philip Wong

H. -S. Philip Wong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciNeural and Evolutionary ComputingEmerging TechnologiesArtificial IntelligenceCryptography and Securitycs.CYDistributed, Parallel, and Cluster ComputingHardware ArchitectureMachine LearningOther Computer Sciencephysics.ins-det

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Published work

13 published item(s)

preprint2022arXiv

Innovating at Speed and at Scale: A Next Generation Infrastructure for Accelerating Semiconductor Technologies

Semiconductor innovation drives improvements to technologies that are critical to modern society. The country that successfully accelerates semiconductor innovation is positioned to lead future semiconductor-driven industries and benefit from the resulting economic growth. It is our view that a next generation infrastructure is necessary to accelerate and enhance semiconductor innovation in the U.S. In this paper, we propose such an advanced infrastructure composed of a national network of facilities with enhancements in technology and business models. These enhancements enable application-driven and challenge-based research and development, and ensure that facilities are accessible and sustainable. The main tenets are: a challenge-driven operational model, a next-generation infrastructure to serve that operational model, technology innovations needed for advanced facilities to speed up learning cycles, and innovative cost-effective business models for sustainability. Ultimately, the expected outcomes of such a participatory, scalable, and sustainable nation-level advanced infrastructure will have tremendous impact on government, industry, and academia alike.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nanotechnology-inspired Information Processing Systems of the Future

Nanoscale semiconductor technology has been a key enabler of the computing revolution. It has done so via advances in new materials and manufacturing processes that resulted in the size of the basic building block of computing systems - the logic switch and memory devices - being reduced into the nanoscale regime. Nanotechnology has provided increased computing functionality per unit volume, energy, and cost. In order for computing systems to continue to deliver substantial benefits for the foreseeable future to society at large, it is critical that the very notion of computing be examined in the light of nanoscale realities. In particular, one needs to ask what it means to compute when the very building block - the logic switch - no longer exhibits the level of determinism required by the von Neumann architecture. There needs to be a sustained and heavy investment in a nation-wide Vertically Integrated Semiconductor Ecosystem (VISE). VISE is a program in which research and development is conducted seamlessly across the entire compute stack - from applications, systems and algorithms, architectures, circuits and nanodevices, and materials. A nation-wide VISE provides clear strategic advantages in ensuring the US's global superiority in semiconductors. First, a VISE provides the highest quality seed-corn for nurturing transformative ideas that are critically needed today in order for nanotechnology-inspired computing to flourish. It does so by dramatically opening up new areas of semiconductor research that are inspired and driven by new application needs. Second, a VISE creates a very high barrier to entry from foreign competitors because it is extremely hard to establish, and even harder to duplicate.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Device and System Level Design Considerations for Analog-Non-Volatile-Memory Based Neuromorphic Architectures

This paper gives an overview of recent progress in the brain inspired computing field with a focus on implementation using emerging memories as electronic synapses. Design considerations and challenges such as requirements and design targets on multilevel states, device variability, programming energy, array-level connectivity, fan-in/fanout, wire energy, and IR drop are presented. Wires are increasingly important in design decisions, especially for large systems, and cycle-to-cycle variations have large impact on learning performance.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2

Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile growth mechanism for semimetallic WTe2 crystals, then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 um long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3 to 20 layers thick). High-field electrical measurements and electro-thermal modeling demonstrate that ultra-thin WTe2 can carry remarkably high current density (approaching 50 MA/cm2, higher than most common interconnect metals) despite a very low thermal conductivity (of the order ~3 W/m/K). These results suggest several pathways for air-stable technological viability of this layered semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Picosecond electric-field-induced threshold switching in phase-change materials

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag$_4$In$_3$Sb$_{67}$Te$_{26}$. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on sub-picosecond time-scales - faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Training a Probabilistic Graphical Model with Resistive Switching Electronic Synapses

Current large scale implementations of deep learning and data mining require thousands of processors, massive amounts of off-chip memory, and consume gigajoules of energy. Emerging memory technologies such as nanoscale two-terminal resistive switching memory devices offer a compact, scalable and low power alternative that permits on-chip co-located processing and memory in fine-grain distributed parallel architecture. Here we report first use of resistive switching memory devices for implementing and training a Restricted Boltzmann Machine (RBM), a generative probabilistic graphical model as a key component for unsupervised learning in deep networks. We experimentally demonstrate a 45-synapse RBM realized with 90 resistive switching phase change memory (PCM) elements trained with a bio-inspired variant of the Contrastive Divergence (CD) algorithm, implementing Hebbian and anti-Hebbian weight updates. The resistive PCM devices show a two-fold to ten-fold reduction in error rate in a missing pixel pattern completion task trained over 30 epochs, compared to untrained case. Measured programming energy consumption is 6.1 nJ per epoch with the resistive switching PCM devices, a factor of ~150 times lower than conventional processor-memory systems. We analyze and discuss the dependence of learning performance on cycle-to-cycle variations as well as number of gradual levels in the PCM analog memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs according to the selection of CNT diameter, CNT density, contact length, and gate length for a target contacted gate pitch. We describe a co-optimization study of CNFET device parameters near the limits of scaling with physical insight, and project the CNFET performance at the 5-nm technology node with an estimated contacted gate pitch of 31 nm. Based on the analysis including parasitic resistance, capacitance, and tunneling leakage current, a CNT density of 180 CNTs/μm will enable CNFET technology to meet the ITRS target of drive current (1.33 mA/μm), which is within reach of modern experimental capabilities

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements

We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: (i) carrier VS velocity extracted from experimental devices with gate lengths down to 15 nm; (ii) carrier effective mobility and velocity depending on the CNT diameter; (iii) short channel effect such as inverse subthreshold slope degradation and drain-induced barrier lowering depending on the device dimensions; (iv) small-signal capacitances including the CNT quantum capacitance effect to account for the decreasing gate capacitance at high gate bias. The CNFET model captures dimensional scaling effects and is suitable for technology benchmarking and performance projection at the sub-10-nm technology nodes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Rapid Co-optimization of Processing and Circuit Design to Overcome Carbon Nanotube Variations

Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly-scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and severely degrade their anticipated energy and speed benefits. Joint exploration and optimization of CNT processing options and CNFET circuit design are required to overcome this outstanding challenge. Unfortunately, existing approaches for such exploration and optimization are computationally expensive, and mostly rely on trial-and-error-based ad hoc techniques. In this paper, we present a framework that quickly evaluates the impact of CNT variations on circuit delay and noise margin, and systematically explores the large space of CNT processing options to derive optimized CNT processing and CNFET circuit design guidelines. We demonstrate that our framework: 1) runs over 100x faster than existing approaches, and 2) accurately identifies the most important CNT processing parameters, together with CNFET circuit design parameters (e.g., for CNFET sizing and standard cell layouts), to minimize the impact of CNT variations on CNFET circuit speed with less than 5% energy cost, while simultaneously meeting circuit-level noise margin and yield constraints.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

TPAD: Hardware Trojan Prevention and Detection for Trusted Integrated Circuits

There are increasing concerns about possible malicious modifications of integrated circuits (ICs) used in critical applications. Such attacks are often referred to as hardware Trojans. While many techniques focus on hardware Trojan detection during IC testing, it is still possible for attacks to go undetected. Using a combination of new design techniques and new memory technologies, we present a new approach that detects a wide variety of hardware Trojans during IC testing and also during system operation in the field. Our approach can also prevent a wide variety of attacks during synthesis, place-and-route, and fabrication of ICs. It can be applied to any digital system, and can be tuned for both traditional and split-manufacturing methods. We demonstrate its applicability for both ASICs and FPGAs. Using fabricated test chips with Trojan emulation capabilities and also using simulations, we demonstrate: 1. The area and power costs of our approach can range between 7.4-165% and 0.07-60%, respectively, depending on the design and the attacks targeted; 2. The speed impact can be minimal (close to 0%); 3. Our approach can detect 99.998% of Trojans (emulated using test chips) that do not require detailed knowledge of the design being attacked; 4. Our approach can prevent 99.98% of specific attacks (simulated) that utilize detailed knowledge of the design being attacked (e.g., through reverse-engineering). 5. Our approach never produces any false positives, i.e., it does not report attacks when the IC operates correctly.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there has been experimental work that demonstrated the operation of nanoscale synaptic element at the single device level, network level studies have been limited to simulations. In this work, we demonstrate, using experiments, array level associative learning using phase change synaptic devices connected in a grid like configuration similar to the organization of the biological brain. Implementing Hebbian learning with phase change memory cells, the synaptic grid was able to store presented patterns and recall missing patterns in an associative brain-like fashion. We found that the system is robust to device variations, and large variations in cell resistance states can be accommodated by increasing the number of training epochs. We illustrated the tradeoff between variation tolerance of the network and the overall energy consumption, and found that energy consumption is decreased significantly for lower variation tolerance.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Experimental Demonstration of Array-level Learning with Phase Change Synaptic Devices

The computational performance of the biological brain has long attracted significant interest and has led to inspirations in operating principles, algorithms, and architectures for computing and signal processing. In this work, we focus on hardware implementation of brain-like learning in a brain-inspired architecture. We demonstrate, in hardware, that 2-D crossbar arrays of phase change synaptic devices can achieve associative learning and perform pattern recognition. Device and array-level studies using an experimental 10x10 array of phase change synaptic devices have shown that pattern recognition is robust against synaptic resistance variations and large variations can be tolerated by increasing the number of training iterations. Our measurements show that increase in initial variation from 9 % to 60 % causes required training iterations to increase from 1 to 11.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements

We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below kT over a broad temperature range (4K-300K). We have achieved a resolution at room temperature of 10aF per root Hz for a 10mV AC excitation at 17.5 kHz, with improved resolution at cryogenic temperatures, for the same excitation amplitude. We demonstrate the performance of our capacitance bridge by measuring the quantum capacitance of top-gated graphene devices and comparing against results obtained with the highest resolution commercially-available capacitance measurement bridge. Under identical test conditions, our bridge exceeds the resolution of the commercial tool by up to several orders of magnitude.

0 citations0 reviewsNo code linkedOpen access