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Source author record

H. Kohlstedt

H. Kohlstedt appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherEmerging Technologiesnlin.SIphysics.ins-det

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Published work

13 published item(s)

preprint2016arXiv

Tunable $φ$ Josephson Junction ratchet

We demonstrate experimentally the operation of a deterministic Josephson ratchet with tunable asymmetry. The ratchet is based on a $φ$ Josephson junction with a ferromagnetic barrier operating in the underdamped regime. The system is probed also under the action of an additional dc current, which acts as a counter force trying to stop the ratchet. Under these conditions the ratchet works against the counter force, thus producing a non-zero output power. Finally, we estimate the efficiency of the $φ$ Josephson junction ratchet.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Synchronization of two memristive coupled van der Pol oscillators

The objective of this paper is to explore the possibility to couple two van der Pol (vdP) oscillators via a resistance-capacitance (RC) network comprising a Ag-TiOx-Al memristive device. The coupling was mediated by connecting the gate terminals of two programmable unijunction transistors (PUTs) through the network. In the high resistance state (HRS) the memresistance was in the order of MOhm leading to two independent selfsustained oscillators characterized by the different frequencies f1 and f2 and no phase relation between the oscillations. After a few cycles and in dependency of the mediated pulse amplitude the memristive device switched to the low resistance state (LRS) and a frequency adaptation and phase locking was observed. The experimental results are underlined by theoretically considering a system of two coupled vdP equations. The presented neuromorphic circuitry conveys two essentials principle of interacting neuronal ensembles: synchronization and memory. The experiment may path the way to larger neuromorphic networks in which the coupling parameters can vary in time and strength and are realized by memristive devices.

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preprint2014arXiv

The effect of normal metal layers in ferromagnetic Josephson junctions

Using the Usadel equation approach, we provide a compact formalism to calculate the critical current density of 21 different types of ferromagnetic (F) Josephson junctions containing insulating (I) and normal metal (N) layers in the weak link regions. In particular, we obtain that even a thin additional N layer may shift the 0-$π$ transitions to larger or smaller values of the thickness $d_F$ of the ferromagnet, depending on its conducting properties. For certain values of $d_F$, a 0-$π$ transition can even be achieved by changing only the N layer thickness. We use our model to fit experimental data of SIFS and SINFS tunnel junctions, where S is a superconducting electrode.

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preprint2013arXiv

Memory cell based on a $φ$ Josephson junction

The $φ$ Josephson junction has a doubly degenerate ground state with the Josephson phases $\pmφ$. We demonstrate the use of such a $φ$ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the "store" state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with Rapid Single Flux Quantum logic is possible.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Experimental evidence of a ϕ Josephson junction

We demonstrate experimentally the existence of Josephson junctions having a doubly degenerate ground state with an average Josephson phase ψ=\pmϕ. The value of ϕ can be chosen by design in the interval 0<ϕ<π. The junctions used in our experiments are fabricated as 0-π Josephson junctions of moderate normalized length with asymmetric 0 and π regions. We show that (a) these ϕ Josephson junctions have two critical currents, corresponding to the escape of the phase ψ from -ϕ and +ϕ states; (b) the phase ψ can be set to a particular state by tuning an external magnetic field or (c) by using a proper bias current sweep sequence. The experimental observations are in agreement with previous theoretical predictions.

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preprint2011arXiv

Ferromagnetic resonance in epitaxial films: Effects of lattice strains and voltage control via ferroelectric substrate

The phenomenon of ferromagnetic resonance (FMR) provides fundamental information on the physics of magnetic materials and lies at the heart of a variety of signal processing microwave devices. Here we demonstrate theoretically that substrate-induced lattice strains may change the FMR frequency of an epitaxial ferromagnetic film dramatically, leading to ultralow and ultrahigh resonance frequencies at room temperature. Remarkably, the FMR frequency varies with the epitaxial strain nonmonotonically, reaching minimum at a critical strain corresponding to the strain-induced spin reorientation transition. Furthermore, by coupling the ferromagnetic film to a ferroelectric substrate, it becomes possible to achieve an efficient voltage control of FMR parameters. In contrast to previous studies, we found that the tunability of FMR frequency varies with the applied electric field and strongly increases at critical field intensity. The revealed features open up wide opportunities for the development of advanced tunable magnetoelectric devices based on strained nanomagnets.

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preprint2010arXiv

Critical current diffraction pattern of SIFS Josephson junctions with step-like F-layer

We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied to obtain different combinations of positive and negative critical current densities $j_{c,1}$ and $j_{c,2}$. The measured dependences of the critical current on applied magnetic field can be well described by a model which takes into account different critical current densities (obtained from reference junctions) and different net magnetization of the multidomain ferromagnetic layer in both halves.

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preprint2010arXiv

Evidence for triplet superconductivity in Josephson junctions with ferromagnetic Cu$_{2}$MnAl-Heusler barriers

We have studied Josephson junctions with barriers prepared from the Heusler compound Cu$_2$MnAl. In the as-prepared state the Cu$_2$MnAl layers are non ferromagnetic and the critical Josephson current density $j_{c}$ decreases exponentially with the thickness of the Heusler layers $d_{F}$. On annealing the junctions at 240\degree C the Heusler layers develop ferromagnetic order and we observe a dependence $j_{c}(d_{F}$) with $j_{c}$ strongly enhanced and weakly thickness dependent in the thickness range 7.0 nm < $d_{F}$ < 10.6 nm. We attribute this feature to a triplet component in the superconducting pairing function generated by the specific magnetization profile inside thin Cu$_2$MnAl layers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Interference patterns of multifacet 20x(0-pi-) Josephson junctions with ferromagnetic barrier

We have realized multifacet Josephson junctions with periodically alternating critical current density (MJJs) using superconductor-insulator-ferromagnet-superconductor heterostructures. We show that anomalous features of critical current vs. applied magnetic field, observed also for other types of MJJs, are caused by a non-uniform flux density (parallel to the barrier) resulting from screening currents in the electrodes in the presence of a (parasitic) off-plane field component.

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preprint2010arXiv

Josephson supercurrent in Nb/InN-nanowire/Nb junctions

We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $μ$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field perpendicular to the plane of the Josephson junction on the critical current has been studied. The observed monotonous decrease of the critical current with magnetic field is explained by the magnetic pair-breaking effect in planar Josephson junctions of ultra-narrow width [J. C. Cuevas and F. S. Bergeret, Phys. Rev. Lett. 99, 217002 (2007)]

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions

We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions.

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preprint2009arXiv

Strong enhancement of direct magnetoelectric effect in strained ferroelectric-ferromagnetic thin-film heterostructures

The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is shown that the ME response strongly depends on the initial strain state of the film. The ME polarization coefficient of the heterostructures involving Terfenol-D substrates and compressively strained lead zirconate titanate (PZT) films, which stabilize in the out-of-plane polarization state, is found to be comparable to that of bulk PZT/Terfenol-D laminate composites. At the same time, the ME voltage coefficient reaches a giant value of 50 V/(cm Oe), which greatly exceeds the maximum observed static ME coefficients of bulk composites. This remarkable feature is explained by a favorable combination of considerable strain sensitivity of polarization and a low electric permittivity in compressively strained PZT films. The theory also predicts a further dramatic increase of ME coefficients at the strain-induced transitions between different ferroelectric phases.

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preprint2009arXiv

Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and πsegments

Josephson junctions with ferromagnetic barrier can have positive or negative critical current depending on the thickness $d_F$ of the ferromagnetic layer. Accordingly, the Josephson phase in the ground state is equal to 0 (a conventional or 0 junction) or to $π$ ($π$ junction). When 0 and $π$ segments are joined to form a "0-$π$ junction", spontaneous supercurrents around the 0-$π$ boundary can appear. Here we report on the visualization of supercurrents in superconductor-insulator-ferromagnet-superconductor (SIFS) junctions by low-temperature scanning electron microscopy (LTSEM). We discuss data for rectangular 0, $π$, 0-$π$, 0-$π$-0 and 20 \times 0-$π$ junctions, disk-shaped junctions where the 0-$π$ boundary forms a ring, and an annular junction with two 0-$π$ boundaries. Within each 0 or $π$ segment the critical current density is fairly homogeneous, as indicated both by measurements of the magnetic field dependence of the critical current and by LTSEM. The $π$ parts have critical current densities $j_c^π$ up to $35\units{A/cm^2}$ at $T = 4.2\units{K}$, which is a record value for SIFS junctions with a NiCu F-layer so far. We also demonstrate that SIFS technology is capable to produce Josephson devices with a unique topology of the 0-$π$ boundary.

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