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H. Kohlstedt

H. Kohlstedt contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2010arXiv

Critical current diffraction pattern of SIFS Josephson junctions with step-like F-layer

We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied to obtain different combinations of positive and negative critical current densities $j_{c,1}$ and $j_{c,2}$. The measured dependences of the critical current on applied magnetic field can be well described by a model which takes into account different critical current densities (obtained from reference junctions) and different net magnetization of the multidomain ferromagnetic layer in both halves.

preprint2010arXiv

Evidence for triplet superconductivity in Josephson junctions with ferromagnetic Cu$_{2}$MnAl-Heusler barriers

We have studied Josephson junctions with barriers prepared from the Heusler compound Cu$_2$MnAl. In the as-prepared state the Cu$_2$MnAl layers are non ferromagnetic and the critical Josephson current density $j_{c}$ decreases exponentially with the thickness of the Heusler layers $d_{F}$. On annealing the junctions at 240\degree C the Heusler layers develop ferromagnetic order and we observe a dependence $j_{c}(d_{F}$) with $j_{c}$ strongly enhanced and weakly thickness dependent in the thickness range 7.0 nm < $d_{F}$ < 10.6 nm. We attribute this feature to a triplet component in the superconducting pairing function generated by the specific magnetization profile inside thin Cu$_2$MnAl layers.

preprint2009arXiv

Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions

We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions.

preprint2009arXiv

Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and πsegments

Josephson junctions with ferromagnetic barrier can have positive or negative critical current depending on the thickness $d_F$ of the ferromagnetic layer. Accordingly, the Josephson phase in the ground state is equal to 0 (a conventional or 0 junction) or to $π$ ($π$ junction). When 0 and $π$ segments are joined to form a &#34;0-$π$ junction&#34;, spontaneous supercurrents around the 0-$π$ boundary can appear. Here we report on the visualization of supercurrents in superconductor-insulator-ferromagnet-superconductor (SIFS) junctions by low-temperature scanning electron microscopy (LTSEM). We discuss data for rectangular 0, $π$, 0-$π$, 0-$π$-0 and 20 \times 0-$π$ junctions, disk-shaped junctions where the 0-$π$ boundary forms a ring, and an annular junction with two 0-$π$ boundaries. Within each 0 or $π$ segment the critical current density is fairly homogeneous, as indicated both by measurements of the magnetic field dependence of the critical current and by LTSEM. The $π$ parts have critical current densities $j_c^π$ up to $35\units{A/cm^2}$ at $T = 4.2\units{K}$, which is a record value for SIFS junctions with a NiCu F-layer so far. We also demonstrate that SIFS technology is capable to produce Josephson devices with a unique topology of the 0-$π$ boundary.