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Researcher profile

M. Weides

M. Weides contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciquant-phcond-mat.mes-hallcond-mat.supr-con

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Published work

3 published item(s)

preprint2022arXiv

Antiferromagnetic cavity magnon polaritons in collinear and canted phases of hematite

Cavity spintronics explores light matter interactions at the interface between spintronic and quantum phenomena. Until now, studies have focused on the hybridization between ferromagnets and cavity photons.In this article, we realize antiferromagnetic cavity-magnon polaritons. The collective spin motion in single hematite crystals (α-Fe2O3) hybridizes with 18 - 45 GHz microwave cavity photons with required specific symmetries. We show theoretically and experimentally that the photon-magnon coupling in the collinear phase is mediated by the dynamical Neel vector and the weak magnetic moment in the canted phase by measuring across the Morin transition. The coupling strength g is shown to scale with the anisotropy field in the collinear phase and with the Dzyaloshinskii-Moriya field in the canted phase. We achieve a strong coupling regime both in canted (C > 25 at 300 K) and noncolinear phases (C > 4 at 150 K) and thus coherent information exchange with antiferromagnets These results evidence a generic strategy to achieve cavity-magnon polaritons in antiferromagnets for different symmetries, opening the field of cavity spintronics to antiferromagnetic materials.

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preprint2019arXiv

Optimization of $Al/AlO_x/Al$-Layer Systems for Josephson Junctions from a Microstructure Point of View

$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on influence of deposition conditions combined with structural analyses on the nanoscale are rare up to now. We have focused on the optimization of the structural properties of $Al/AlO_x/Al$-layer systems deposited on Si(111) substrates with a particular focus on the thickness homogeneity of the $AlO_x$-tunnel barrier. A standard high-vacuum electron-beam deposition system was used and the effect of substrate pretreatment, different Al-deposition temperatures and Al-deposition rates was studied. Transmission electron microscopy was applied to analyze the structural properties of the $Al/AlO_x/Al$-layer systems to determine the thickness homogeneity of the $AlO_x$ layer, grain size distribution in the Al layers, Al-grain boundary types and the morphology of the $Al/AlO_x$ interface. We show that the structural properties of the lower Al layer are decisive for the structural quality of the whole $Al/AlO_x/Al$-layer system. Optimum conditions yield an epitaxial Al(111) layer on a Si(111) substrate with an Al-layer thickness variation of only 1.6 nm over more than 10 $μm$ and large lateral grain sizes up to 1 $μm$. Thickness fluctuations of the $AlO_x$-tunnel barrier are minimized on such an Al layer which is essential for the homogeneity of the tunnel current. Systematic variation of the Al-deposition rate and deposition temperature allows to develop an understanding of the growth mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits

This work is concerned with Al/Al-oxide(AlO$_{x}$)/Al-layer systems which are important for Josephson-junction-based superconducting devices such as quantum bits. The device performance is limited by noise, which has been to a large degree assigned to the presence and properties of two-level tunneling systems in the amorphous AlO$_{x}$ tunnel barrier. The study is focused on the correlation of the fabrication conditions, nanostructural and nanochemical properties and the occurrence of two-level tunneling systems with particular emphasis on the AlO$_{x}$-layer. Electron-beam evaporation with two different processes and sputter deposition were used for structure fabrication, and the effect of illumination by ultraviolet light during Al-oxide formation is elucidated. Characterization was performed by analytical transmission electron microscopy and low-temperature dielectric measurements. We show that the fabrication conditions have a strong impact on the nanostructural and nanochemical properties of the layer systems and the properties of two-level tunneling systems. Based on the understanding of the observed structural characteristics, routes are derived towards the fabrication of Al/AlO$_{x}$/Al-layers systems with improved properties.

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