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Guoping Guo

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Published work

17 published item(s)

preprint2023arXiv

VQNet 2.0: A New Generation Machine Learning Framework that Unifies Classical and Quantum

With the rapid development of classical and quantum machine learning, a large number of machine learning frameworks have been proposed. However, existing machine learning frameworks usually only focus on classical or quantum, rather than both. Therefore, based on VQNet 1.0, we further propose VQNet 2.0, a new generation of unified classical and quantum machine learning framework that supports hybrid optimization. The core library of the framework is implemented in C++, and the user level is implemented in Python, and it supports deployment on quantum and classical hardware. In this article, we analyze the development trend of the new generation machine learning framework and introduce the design principles of VQNet 2.0 in detail: unity, practicality, efficiency, and compatibility, as well as full particulars of implementation. We illustrate the functions of VQNet 2.0 through several basic applications, including classical convolutional neural networks, quantum autoencoders, hybrid classical-quantum networks, etc. After that, through extensive experiments, we demonstrate that the operation speed of VQNet 2.0 is higher than the comparison method. Finally, through extensive experiments, we demonstrate that VQNet 2.0 can deploy on different hardware platforms, the overall calculation speed is faster than the comparison method. It also can be mixed and optimized with quantum circuits composed of multiple quantum computing libraries.

preprint2022arXiv

An automated approach for consecutive tuning of quantum dot arrays

Recent progress has shown that the dramatically increased number of parameters has become a major issue in tuning of multi-quantum dot devices. The complicated interactions between quantum dots and gate electrodes cause the manual tuning process to no longer be efficient. Fortunately, machine learning techniques can automate and speed up the tuning of simple quantum dot systems. In this letter, we extend the techniques to tune multi-dot devices. We propose an automated approach that combines machine learning, virtual gates and a local-to-global method to realize the consecutive tuning of quantum dot arrays by dividing them into subsystems. After optimizing voltage configurations and establishing virtual gates to control each subsystem independently, a quantum dot array can be efficiently tuned to the few-electron regime with appropriate interdot tunnel coupling strength. Our experimental results show that this approach can consecutively tune quantum dot arrays into an appropriate voltage range without human intervention and possesses broad application prospects in large-scale quantum dot devices.

preprint2022arXiv

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteristics within the temperature (T) range from 300 K to 4.2 K. The important electrical merits of the device, including drain saturation current (IDsat), on-resistance (RON), transductance, subthreshold swing (SS), gate leakage current, and Schottky barrier height, are comprehensively characterized and their temperature-dependent behavior was statistically analyzed. In addition, the LFN of the device shows an evident behavior of 1/f noise from 10 Hz to 10 kHz in the measured temperature range and can be significantly reduced at cryogenic temperature. These results are of great importance to motivate further studies into the GaN-based cryo-devices and systems.

preprint2022arXiv

Design of Cryogenic Fully Differential Gain Boosting-OTA by the $g_{m}/I_{d}$ methodology used for a 14 bit Pipelined-SAR ADC

Quantum computing (QC) requires cryogenic electronic circuits as control and readout sub-systems of quantum chips to meet the qubit scale-up challenges.At this temperature,MOSFETs transistors exhibition many changes such as higher threshold voltage,higher mobility,and steeper substhreshold slope.We present a cryogenic fully differential gain boosting-OTA used for a 14 bit Pipelined-SAR ADC operating at 4.2K as the readout circuit for semiconductor-based quantum computing system.Using $g_{m}/I_{d}$ methodology to get pre-computed lookup tables based on the cryogenic 110nm BSIM4 model.The proposed OTA achieves very high unity-gain frequency@1.23GHz and open-loop low frequency gain@101dB.The total power consumption is 2.66mW at 4.2K,and a setting accuracy better than 0.01\% with $f_{-3dB}$ of 37MHz in a closed-loop application.

preprint2022arXiv

QPanda: high-performance quantum computing framework for multiple application scenarios

With the birth of Noisy Intermediate Scale Quantum (NISQ) devices and the verification of "quantum supremacy" in random number sampling and boson sampling, more and more fields hope to use quantum computers to solve specific problems, such as aerodynamic design, route allocation, financial option prediction, quantum chemical simulation to find new materials, and the challenge of quantum cryptography to automotive industry security. However, these fields still need to constantly explore quantum algorithms that adapt to the current NISQ machine, so a quantum programming framework that can face multi-scenarios and application needs is required. Therefore, this paper proposes QPanda, an application scenario-oriented quantum programming framework with high-performance simulation. Such as designing quantum chemical simulation algorithms based on it to explore new materials, building a quantum machine learning framework to serve finance, etc. This framework implements high-performance simulation of quantum circuits, a configuration of the fusion processing backend of quantum computers and supercomputers, and compilation and optimization methods of quantum programs for NISQ machines. Finally, the experiment shows that quantum jobs can be executed with high fidelity on the quantum processor using quantum circuit compile and optimized interface and have better simulation performance.

preprint2022arXiv

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.

preprint2020arXiv

A simultaneous feedback and feed-forward control and its application to realize a random walk on the Bloch sphere in a superconducting Xmon-qubit system

Measurement-based feedback control is central in quantum computing and precise quantum control. Here we realize a fast and flexible field-programmable-gate-array-based feedback control in a superconducting Xmon qubit system. The latency of room-temperature electronics is custom optimized to be as short as 140 ns. Projective measurement of a signal qubit produces a feedback tag to actuate a conditional pulse gate to the qubit. In a feed-forward process, the measurement-based feedback tag is brought to a different target qubit for a conditional control. In a two-qubit experiment, the feedback and feed-forward controls are simultaneously actuated in consecutive steps. A quantum number is then generated by the signal qubit, and a random walk of the target qubit is correspondingly triggered and realized on the Bloch sphere. Our experiment provides a conceptually simple and intuitive benchmark for the feedback control in a multi-qubit system. The feedback system can be further scaled up for more complex feedback control experiments.

preprint2015arXiv

Coherence times of precisely depth controlled NV centers in diamond

We investigated the depth dependence of coherence times of nitrogen-vacancy (NV) centers through precisely depth controlling by a moderately oxidative at 580°C in air. By successive nanoscale etching, NV centers could be brought close to the diamond surface step by step, which enable us to trace the evolution of the number of NV centers remained in the chip and to study the depth dependence of coherence times of NV centers with the diamond etching. Our results showed that the coherence times of NV centers declined rapidly with the depth reduction in their last about 22 nm before they finally disappeared, revealing a critical depth for the influence of rapid fluctuating surface spin bath. By monitoring the coherence time variation with depth, we could make a shallow NV center with long coherence time for detecting external spins with high sensitivity.

preprint2015arXiv

Enhanced quantum coherence in graphene caused by Pd cluster deposition

We report on the unexpected increase in the dephasing lengths of a graphene sheet caused by the deposition of Pd nanoclusters, as demonstrated by weak localization measurements. The dephasing lengths reached saturated values at low temperatures. Theoretical calculations indicate the p-type charge transfer from the Pd clusters, which contributes more carriers. The saturated values of dephasing lengths often depend on both the carrier concentration and mean free path. Although some impurities are increased as revealed by decreased mobilities, the intense charge transfer leads to the improved saturated values and subsequent improved dephasing lengths.

preprint2014arXiv

High-Sensitivity Temperature Sensing Using an Implanted Single Nitrogen-Vacancy Center Array in Diamond

We presented a high-sensitivity temperature detection using an implanted single Nitrogen-Vacancy center array in diamond. The high-order Thermal Carr-Purcell-Meiboom-Gill (TCPMG) method was performed on the implanted single nitrogen vacancy (NV) center in diamond in a static magnetic field. We demonstrated that under small detunings for the two driving microwave frequencies, the oscillation frequency of the induced fluorescence of the NV center equals approximately to the average of the detunings of the two driving fields. On basis of the conclusion, the zero-field splitting D for the NV center and the corresponding temperature could be determined. The experiment showed that the coherence time for the high-order TCPMG was effectively extended, particularly up to 108 μs for TCPMG-8, about 14 times of the value 7.7 μs for thermal Ramsey method. This coherence time corresponded to a thermal sensitivity of 10.1 mK/Hz1/2. We also detected the temperature distribution on the surface of a diamond chip in three different circumstances by using the implanted NV center array with the TCPMG-3 method. The experiment implies the feasibility for using implanted NV centers in high-quality diamonds to detect temperatures in biology, chemistry, material science and microelectronic system with high-sensitivity and nanoscale resolution.

preprint2013arXiv

Detection and measurement of spin-dependent dynamics in random telegraph signals

A quantum point contact was used to observe single-electron fluctuations of a quantum dot in a GaAs heterostructure. The resulting random telegraph signals (RTS) contain statistical information about the electron spin state if the tunneling dynamics are spin-dependent. We develop a statistical method to extract information about spin-dependent dynamics from RTS and use it to demonstrate that these dynamics can be studied in the thermal energy regime. The tunneling rates of each spin state are independently measured in a finite external magnetic field. We confirm previous findings of a decrease in overall tunneling rates for the spin excited state compared to the ground state as an external magnetic field is increased.

preprint2012arXiv

Doubly and triply coupled nanowire antennas

Nanoantenna is one of the most important optical components for light harvesting. In this study, we show experimental evidence of interactions between coupled nanowires by comparing the fluorescence properties of quantum dots on both non-coupled (single) and coupled (double and triple) nanowire arrays. The fluorescence intensities are dependent on the excitation polarization, and most of the emissions are polarized perpendicular to the long axis of the nanowires. It is interesting that both the excitation polarization dependent enhancement and the fluorescence polarization effect are more pronounced for coupled nanowires. Our theoretical analysis indicates the above phenomena can be ascribed to the dipolar plasmon from the nanowire antennas. Our investigations demonstrate a potential method to control the polarization of emitters using coupled nanowire arrays.

preprint2012arXiv

Electron Number Dependence of Spin Triplet-Singlet Relaxation Time

In a GaAs single quantum dot, the relaxation time T_{1} between spin triplet and singlet states has been measured for the last few even number of electrons. The singlet-triplet energy separation E_{ST} is tuned as a control parameter for the comparison of T_{1} between different electron numbers. T_{1} shows a steady decrease from 2-electrons, 4-electrons, to 6-electrons, and we found this implies an enhancement of the spin-orbital coupling strength in a multi-electron quantum dot.

preprint2011arXiv

Back-action Driven Electron Spin Singlet-Triplet Excitation in a GaAs Quantum Dot

In a single quantum dot (QD), the electrons were driven out of thermal equilibrium by the back-action from a nearby quantum point contact (QPC). We found the driving to energy excited states can be probed with the random telegraph signal (RTS) statistics, when the excited states relax slowly compared with RTS tunneling rate. We studied the last few electrons, and found back-action driven spin singlet-triplet (S-T) excitation for and only for all the even number of electrons. We developed a phenomenological model to quantitatively characterize the spin S-T excitation rate, which enabled us to evaluate the influence of back-action on spin S-T based qubit operations.

preprint2011arXiv

Back-action Induced Non-equilibrium Effect in Electron Charge Counting Statistics

We report our study of the real-time charge counting statistics measured by a quantum point contact (QPC) coupled to a single quantum dot (QD) under different back-action strength. By tuning the QD-QPC coupling or QPC bias, we controlled the QPC back-action which drives the QD electrons out of thermal equilibrium. The random telegraph signal (RTS) statistics showed strong and tunable non-thermal-equilibrium saturation effect, which can be quantitatively characterized as a back-action induced tunneling out rate. We found that the QD-QPC coupling and QPC bias voltage played different roles on the back-action strength and cut-off energy.

preprint2011arXiv

Electron Spin Excited States Spectroscopy in a Quantum Dot Probed by QPC Back-action

The quantum point contact (QPC) back-action has been found to cause non-thermal-equilibrium excitations to the electron spin states in a quantum dot (QD). Here we use back-action as an excitation source to probe the spin excited states spectroscopy for both the odd and even electron numbers under a varying parallel magnetic field. For a single electron, we observed the Zeeman splitting. For two electrons, we observed the splitting of the spin triplet states $|T^{+}>$ and $|T^{0}>$ and found that back-action drives the singlet state $|S>$ overwhelmingly to $|T^{+}>$ other than $|T^{0}>$. All these information were revealed through the real-time charge counting statistics.

preprint2010arXiv

Interference of surface plasmon polaritons from a "point" source

The interference patterns of the surface plasmon polaritons(SPPs) on the metal surface from a "point" source are observed. These interference patterns come from the forward SPPs and the reflected one from the obstacles, such as straightedge,corner, and ring groove structure. Innovation to the previous works, a "point" SPPs source with diameter of 100 nm is generated at the freely chosen positions on Au/air interface using near field excitation method. Such a "point" source provides good enough coherence to generate obvious interference phenomenon. The constructive and destructive interference patterns of the SPPs agree well with the numerical caculation. This "point" SPPs source may be useful in the investigation of plasmonics for its high coherence, deterministic position and minimum requirement for the initial light source.