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Haiou Li

Haiou Li contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

An automated approach for consecutive tuning of quantum dot arrays

Recent progress has shown that the dramatically increased number of parameters has become a major issue in tuning of multi-quantum dot devices. The complicated interactions between quantum dots and gate electrodes cause the manual tuning process to no longer be efficient. Fortunately, machine learning techniques can automate and speed up the tuning of simple quantum dot systems. In this letter, we extend the techniques to tune multi-dot devices. We propose an automated approach that combines machine learning, virtual gates and a local-to-global method to realize the consecutive tuning of quantum dot arrays by dividing them into subsystems. After optimizing voltage configurations and establishing virtual gates to control each subsystem independently, a quantum dot array can be efficiently tuned to the few-electron regime with appropriate interdot tunnel coupling strength. Our experimental results show that this approach can consecutively tune quantum dot arrays into an appropriate voltage range without human intervention and possesses broad application prospects in large-scale quantum dot devices.

preprint2022arXiv

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.