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Guanghou Wang

Guanghou Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gascond-mat.str-elcond-mat.supr-conphysics.app-phphysics.atm-clusphysics.opticsquant-ph

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Published work

25 published item(s)

preprint2022arXiv

Charge transport in monolayers of metal nanoparticles

Two-dimensional (2D) nanoparticle films are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. The importance of conducting nanoparticle films makes the fundamental understanding of their charge transport extremely important for materials and process design. Various hopping and transport mechanisms have been proposed and the nanoparticle monolayer is consistent with the electrical equivalent RC circuit, but their theoretical methods are limited to the model of the single electron tunneling between capacitively coupled nanoparticles with a characteristic time constant RC and the conductivity of thin film is the experimental conductivity, which cannot be deduced from these theoretical models. It is also unclear that how the specific process of electron transpot is affected by temperature. So, nowadays the electron dynamics of thin film cannot be understood fundamentally. Here, we develop an analytical theory based on the model of Sommerfeld, backed up by Monte-Carlo simulations, that predicts the process of charge transport and the effect of temperature on the electron transport in the thin film. In this paper two different nanoparticle models were built to cope with different types of morphology: triangular array and rectangular array. The transport properties of these different kinds of arrays including 2D ordered nanoparticle arrays with/without local structural disorder and 2D gradient nanoparticle arrays were investigated at different temperatures. For 2D well-ordered nanoparticle array without local structural disorder, the I-V curves are non-linear and highly symmetric.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Gd@C82-based single molecular electret device with switchable electrical polarization

Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of GdC82, where the encapsulated Gd atom forms a charge center, and we have observed a gate controlled switching behavior between two sets of single electron transport stability diagrams. The switching is operated in a hysteresis loop with a coercive gate field of around 0.5Vnm. Theoretical calculations have assigned the two conductance diagrams to corresponding energy levels of two states that the Gd atom is trapped at two different sites of the C82 cage, which possess two different permanent electrical dipole orientations. The two dipole states are stabilized by the anisotropic energy and separated by a transition energy barrier of 70 meV. Such switching is then accessed to the electric field driven reorientation of individual dipole while overcoming the barriers by the coercive gate field, and demonstrates the creation of a single molecular electret.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Investigation of plasmonic evolution of atomically size-selected Au clusters by electron energy loss spectrum--from solid state to molecular scale

Versatile quantum modes emerge for plasmon describing the collective oscillations of free electrons in metallic nanoparticles when the particle sizes are greatly reduced. Rather than traditional nanoscale study, the understanding of quantum plasmon desires extremal atomic control of the nanoparticles, calling for size dependent plasmon measurement over a series of nanoparticles with atomically adjustable atom number over several orders of magnitude. Here we report the N dependent plasmonic evolution of atomically size selected gold particles with N= 100 70000 using electron energy loss (EEL) spectroscopy in a scanning transmission electron microscope. The EEL mapping assigns a feature at 2.7 eV as the bulk plasmon and another at 2.4 eV as surface plasmon, which evolution reveals three regimes. When N decreases from 70000 to 887, the bulk plasmon stays unchanged while the surface plasmon exhibits a slight red shift from 2.4 to 2.3 eV. It can be understood by the dominance of classical plasmon physics and electron boundary scattering induced retardation. When N further decreases from 887 to 300, the bulk plasmon disappears totally and the surface plasmon shows a steady blueshift, which indicates that the quantum confinement emerges and modifies the intraband transition. When N 100 300, the plasmon is split to three fine features, which is attributed to superimposed single electron transitions between the quantized molecular like energy level by the time dependent density functional theory calculations. The surface plasmon's excitation ratio has a scaling law with an exponential dependence on N ( N^0.669), essentially the square of the radius. A unified evolution picture from the classical to quantum, molecular plasmon is thus demonstrated.

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preprint2016arXiv

Discovery of a new type of topological Weyl fermion semimetal state in Mo$_x$W$_{1-x}$Te$_2$

The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo$_x$W$_{1-x}$Te$_2$ are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ at $x = 25\%$. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that Mo$_x$W$_{1-x}$Te$_2$ is the first Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making Mo$_x$W$_{1-x}$Te$_2$ a promising platform for transport and optics experiments on Weyl semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance

The unconventional magnetoresistance of ZrSiS single crystals is found unsaturated till the magnetic field of 53 T with the butterfly shaped angular dependence. Intense Shubnikov-de Haas oscillations resolve a bulk Dirac cone with a nontrivial Berry phase, where the Fermi surface area is 1.80*10^-3 Å-2 and reaches the quantum limit before 20 T. Angle resolved photoemission spectroscopy measurement reveals an electronic state with the two-dimensional nature around the X point of Brillouin zone boundary. By integrating the density functional theory calculations, ZrSiS is suggested to be a Dirac material with both surface and bulk Dirac bands.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measuring Chern numbers above the Fermi level in the Type II Weyl semimetal Mo$_x$W$_{1-x}$Te$_2$

It has recently been proposed that electronic band structures in crystals give rise to a previously overlooked type of Weyl fermion, which violates Lorentz invariance and, consequently, is forbidden in particle physics. It was further predicted that Mo$_x$W$_{1-x}$Te$_2$ may realize such a Type II Weyl fermion. One crucial challenge is that the Weyl points in Mo$_x$W$_{1-x}$Te$_2$ are predicted to lie above the Fermi level. Here, by studying a simple model for a Type II Weyl cone, we clarify the importance of accessing the unoccupied band structure to demonstrate that Mo$_x$W$_{1-x}$Te$_2$ is a Weyl semimetal. Then, we use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe the unoccupied band structure of Mo$_x$W$_{1-x}$Te$_2$. For the first time, we directly access states $> 0.2$ eV above the Fermi level. By comparing our results with $\textit{ab initio}$ calculations, we conclude that we directly observe the surface state containing the topological Fermi arc. Our work opens the way to studying the unoccupied band structure as well as the time-domain relaxation dynamics of Mo$_x$W$_{1-x}$Te$_2$ and related transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Weak antilocalization in Cd3As2 thin films

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride

Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 Tesla. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of 7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasing pressure, thereby exhibiting the typical dome-shaped superconducting phase. From theoretical calculations, we interpret the low-pressure region of the superconducting dome to an enrichment of the density of states at the Fermi level and attribute the high-pressure decrease in Tc to possible structural instability. Thus, Tungsten ditelluride may provide a new platform for our understanding of superconductivity phenomena in transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Robust linear magnetoresistance in WTe2

Unsaturated magnetoresistance (MR) has been reported in WTe2, and remains irrepressible up to very high field. Intense optimization of the crystalline quality causes a squarely-increasing MR, as interpreted by perfect compensation of opposite carriers. Herein we report our observation of linear MR (LMR) in WTe2 crystals, the onset of which is first identified by constructing the mobility spectra of the MR at low fields. The LMR further intensifies and predominates at fields higher than 20 Tesla while the parabolic MR gradually decays. The LMR remains unsaturated up to a high field of 60 Tesla and persists, even at a high pressure of 6.2 GPa. Assisted by density functional theory calculations and detailed mobility spectra, we find the LMR to be robust against the applications of high field, broken carrier balance, and mobility suppression. Angle-resolved photoemission spectroscopy reveals a unique quasilinear energy dispersion near the Fermi level. Our results suggest that the robust LMR is the low bound of the unsaturated MR in WTe2.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Unoccupied electronic structure and signatures of topological Fermi arcs in the Weyl semimetal candidate Mo$_x$W$_{1-x}$Te$_2$

Weyl semimetals have sparked intense research interest, but experimental work has been limited to the TaAs family of compounds. Recently, a number of theoretical works have predicted that compounds in the Mo$_x$W$_{1-x}$Te$_2$ series are Weyl semimetals. Such proposals are particularly exciting because Mo$_x$W$_{1-x}$Te$_2$ has a quasi two-dimensional crystal structure well-suited to many transport experiments, while WTe$_2$ and MoTe$_2$ have already been the subject of numerous proposals for device applications. However, with available ARPES techniques it is challenging to demonstrate a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$. According to the predictions, the Weyl points are above the Fermi level, the system approaches two critical points as a function of doping, there are many irrelevant bulk bands, the Fermi arcs are nearly degenerate with bulk bands and the bulk band gap is small. Here, we study Mo$_x$W$_{1-x}$Te$_2$ for $x = 0.07$ and 0.45 using pump-probe ARPES. The system exhibits a dramatic response to the pump laser and we successfully access states $> 0.2$eV above the Fermi level. For the first time, we observe direct, experimental signatures of Fermi arcs in Mo$_x$W$_{1-x}$Te$_2$, which agree well with theoretical calculations of the surface states. However, we caution that the interpretation of these features depends sensitively on free parameters in the surface state calculation. We comment on the prospect of conclusively demonstrating a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$.

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preprint2014arXiv

Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics

We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick flakes. Such optimized topological SS transport is achieved by an intense aging process, when the bulk conductance is suppressed by four orders of magnitude in the long period. Scanning tunneling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the aging. In combination with first-principles calculations, an atomic tunneling-clustering procedure across a diffusion barrier of 0.57eV is proposed.

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preprint2014arXiv

Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons

Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of these experiments is made difficult by the presence of residual bulk carriers and their coupling to surface states, which is not yet well understood. In this work, we present the first evidence for the existence and control of bulk-surface coupling in Bi2Te2Se nanoribbons, which are promising platforms for future TI-based devices. Our magnetoresistance measurements reveal that the number of coherent channels contributing to quantum interference in the nanoribbons changes abruptly when the film thickness exceeds the bulk phase relaxation length. We interpret this observation as an evidence for bulk-mediated coupling between metallic states located on opposite surfaces. This hypothesis is supported by additional magnetoresistance measurements conducted under a set of gate voltages and in a parallel magnetic field, the latter of which alters the intersurface coupling in a controllable way.

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preprint2013arXiv

Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets

Metallic Bi2Te3 crystalline sheets with the room-temperature resistivity of above 10 mΩ cm were prepared and their magnetoresistive transport was measured in a field of up to 9 Tesla. The Shubnikov de Haas oscillations were identified from the secondly-derived magnetoresistance curves. While changing the angle between the field and normal axis of the sheets, we find that the oscillation periods present a cosine dependence on the angle. This indicates a two-dimensional transport due to the surface state. The work reveals a resolvable surface contribution to the overall conduction even in a metallic topological insulator.

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preprint2012arXiv

Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes

Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of the topological surface states on the exfoliated Bi2Te3 microflakes by a flux period of h/2e in their magnetoresistance oscillations and its weak field character. Both the osillations with the period of h/e and h/2e are observed. The h/2e-period AAS oscillation gradually dominates with increasing the sample widths and the temperatures. This reveals the transition of the Dirac Fermions' transport to the diffusive regime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons

The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior.

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preprint2012arXiv

Visualizing plasmon coupling in closely-spaced chains of Ag nanoparticles by electron energy loss spectroscopy

Anisotropic plasmon coupling in closely-spaced chains of Ag nanoparticles was visualized using the electron energy loss spectroscopy in a scanning transmission electron microscope. For dimers as the simplest chain, mapping the plasmon excitations with nanometers' spatial resolution and 0.27 eV energy resolution intuitively identified two coupling plasmons. The in-phase mode redshifted from the ultraviolet region as the inter-particle spacing was reduced, reaching the visible range at 2.7 eV. Calculations based on the discrete dipole approximation confirmed its optical activeness, where the longitudinal direction was constructed as the path for light transportation. Two coupling paths were then observed in an inflexed 4-particle chain.

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preprint2010arXiv

Calibrating the atomic balance by carbon nanoclusters

Carbon atoms are counted at near atomic-level precision using a scanning transmission electron microscope calibrated by carbon nanocluster mass standards. A linear calibration curve governs the working zone from a few carbon atoms up to 34,000 atoms. This linearity enables adequate averaging of the scattering cross sections, imparting the experiment with near atomic-level precision despite the use of a coarse mass reference. An example of this approach is provided for thin layers of stacked graphene sheets. Suspended sheets with a thickness below 100 nm are visualized, providing quantitative measurement in a regime inaccessible to optical and scanning probe methods.

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preprint2010arXiv

Experimental observation of nanojets formed by heating the PbO-coated Pb clusters

In this article, we will present the first experimental observation of nanojets formed by heating PbO-coated Pb clusters, which has been predicted theoretically by M. Moseler and U Landman. During the heating, the hot liquid ejects through the broken orifice into vacuum, and forms a condensed trail in the tadpole shape as shown in the TEM micrographs. The temperature-variable Raman spectra indicates that the nanojet formation is closely related to the heating temperature and thus essentially to the internal pressure in the coated clusters. The pressure inside the shell, which rises from the inner core's melting and its confined volume expansion and then drops after the final explosion, dominates the whole nanojetting process.

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preprint2010arXiv

Films with the discrete nano-DLC-particles as the field emission cascade

The films with the discrete diamond-like-carbon nanoparticles were prepared by the deposition of the carbon nanoparticle beam. Their morphologies were imaged by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nanoparticles were found distributed on the silicon (100) substrate discretely. The semisphere shapes of the nanoparticles were demonstrated by the AFM line profile. EELS was measured and the sp3 ratio as high as 86% was found. The field-induced electron emission of the as-prepared cascade (nanoDLC/ Si) was tested and the current density of 1mA/cm2 was achieved at 10.2V/μm.

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preprint2010arXiv

Free-standing Graphene as Gold Standard

We demonstrate using graphene sheets as a novel mass standard in the scanning transmission electron microscopy (STEM) based mass spectrometry. Here, free-standing graphene sheets are investigated by STEM. The discrete number of graphene layers enables an accurate calibration of STEM intensity, as performed over an extended thickness and with single atomic layer sensitivity. This leads to the direct and accurate measurement of the electron mean free path. As an application, we gain the insight of carbon nanoparticles of complex structure.

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preprint2010arXiv

Low energy cluster beam deposited BN films as the cascade for Field Emission

The atomic deposited BN films with the thickness of nanometers (ABN) were prepared by radio frequency magnetron sputtering method and the nanostructured BN films (CBN) were prepared by Low Energy Cluster Beam Deposition. UV-Vis Absorption measurement proves the band gap of 4.27eV and field emission of the BN films were carried out. F-N plots of all the samples give a good fitting and demonstrate the F-N tunneling of the emission process. The emission of ABN begins at the electric field of 14.6 V/μm while that of CBN starts at 5.10V/μm. Emission current density of 1mA/cm2 for ABN needs the field of 20V/μm while that of CBN needs only 12.1V/μm. The cluster-deposited BN on n-type Silicon substrate proves a good performance in terms of the lower gauge voltage, more emission sites and higher electron intensity and seems a promising substitute for the cascade of Field Emission.

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preprint2010arXiv

Two-step splitting the expandable graphite for few-layer graphene

Few-layer graphene sheets are prepared by splitting the expanded graphites using a high-power sonication. Atomic-level quantitative scanning transmission electron microscopy (Q-STEM) is employed to carry out the efficient layer statisticsm, enabling global optimization of the experimental conditions. A two-step splitting mechanism is thus revealed, in which the mean layer number was firstly reduced to less than 20 by heating to 1100°C and then tuned to the few-layer region by a 5-minute 104W/litre sonication. Raman spectroscopic analysis confirms the above mechanism and demonstrates that the sheets are largely free of defects and oxides.

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preprint2010arXiv

Visualizing topological insulating Bi2Te3 quintuple layers on SiO2-capped Si substrates and its contrast optimization

Thin Bi2Te3 flakes, with as few as 3 quintuple layers, are optically visualized on the SiO2-capped Si substrates. Their optical contrasts vary with the illumination wavelength, flake thickness and capping layers. The maximum contrast appears at the optimized light with the 570nm wavelength. The contrast turns reversed when the flake is reduced to less than 20 quintuple layers. A calculation based on the Fresnel law describes the above observation with the constructions of the layer number-wave length-contrast three-dimensional (3D) diagram and the cap thickness-wavelength-contrast 3D diagram, applicative in the current studies of topological insulating flakes.

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