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Fengqi Song

Fengqi Song appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.atm-clusquant-phcond-mat.quant-gascond-mat.str-elcond-mat.supr-conphysics.optics

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Published work

41 published item(s)

preprint2022arXiv

Charge Carrier Mediation and Ferromagnetism induced in MnBi6Te10 Magnetic Topological Insulators by antimony doping

A new kind of intrinsic magnetic topological insulators (MTI) MnBi2Te4 family have shed light on the observation of novel topological quantum effect such as quantum anomalous Hall effect (QAHE). However, the strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder the practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magnetic coupling is greatly suppressed by Bi2Te3 layer intercalation. However, AFM is still the ground state in these compounds. Here by magnetic and transport measurements, we demonstrate that Sb substitutional dopant plays a dual role in MnBi6Te10, which can not only adjust the charge carrier type and the concentration, but also induce the solid into a ferromagnetic (FM) ground state. AFM ground state region which is also close to the charge neutral point can be found in the phase diagram of Mn(SbxBi1-x)6Te10 when x ~ 0.25. An intrinsic FM-MTI candidate is thus demonstrated, and it may take a step further for the realization of high-quality and high-temperature QAHE and the related topological quantum effects in the future.

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preprint2022arXiv

Fano Interference in a Single-Molecule Junction

Trends of miniaturized devices and quantum interference electronics lead to the long desire of Fano interference in single-molecule junctions, here, which is successfully demonstrated using the 2,7-di(4-pyridyl)-9,9'-spirobifluorene molecule with a long backbone group and a short side group. Experimentally, the two electrically coupled groups are found to contribute to two blurred degenerate points in the differential conductance mapping. This forms a characteristic non-centrosymmetric double-crossing feature, with distinct temperature response for each crossing. Theoretically, we describe the practical in-junction electron transmission using a new two-tunnelling-channel coupling model and obtain a working formula with a Fano term and a Breit-Wigner term. The formula is shown to provide a good fit for all the mapping data and their temperature dependence in three dimensions, identifying the Fano component. Our work thus forms a complete set of evidence of the Fano interference in a single-molecule junction induced by two-tunnelling-channel coupling transport. Density functional theory calculations are used to corroborate this new physics.

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preprint2022arXiv

Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.

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preprint2022arXiv

Observation of magnetism induced topological edge state in antiferromagnetic topological insulator MnBi4Te7

Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN ~12.5 K, which is constituted of alternatively stacked magnetic layer (MnBi2Te4) and non-magnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electronic state present at a step edge of a magnetic MnBi2Te4 layer but absent at non-magnetic Bi2Te3 layers at 4.5 K. Furthermore, we find that as the temperature rises above TN, the edge state vanishes, while the point defect induced state persists upon temperature increasing. These results confirm the observation of magnetism induced edge states. Our analysis based on an axion insulator theory reveals that the nontrivial topological nature of the observed edge state.

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preprint2021arXiv

Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices

We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-zero longitudinal resistance together with a quantized Hall plateau in excess of 0.97 h/e2 over a range of temperatures from very low up to the Neel temperature of 22 K. Each of four-probe nonlocal measurements gives near-zero resistance and two-probe measurements exhibit a plateau of +1 h/e2, while the results of three-probe nonlocal measurements depend on the magnetic field. This indicates non-dissipation as well as the chirality of the edge state. The CES shows three regimes of temperature dependence, i.e., well-preserved dissipationless transport below 6 K, variable range hopping while increasing the temperature and thermal activation at higher than 22 K. Even at the lowest temperature, a current of over 1.4 μA breaks the dissipationless transport. These form a complete set of evidences of the Chern insulator state in the MnBi2Te4 systems.

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preprint2021arXiv

Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices

On the efforts of enhancing the spin orbit interaction (SOI) of graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele type SOI and high mobility samples are desired. However, common external decoration often introduces extrinsic Rashba-type SOI and simultaneous impurity scattering. Here we show, by the EDTA-Dy molecule decorating, the Kane-Mele type SOI is mimicked with even improved carrier mobility. It is evidenced by the suppressed weak localization at equal carrier densities and simultaneous Elliot-Yafet spin relaxation. The extracted spin scattering time is monotonically dependent on the carrier elastic scattering time, where the Elliot-Yafet plot gives the interaction strength of 3.3 meV. Improved quantum Hall plateaus can be even seen after the external operation. This is attributed to the spin-flexural phonon coupling induced by the enhanced graphene ripples, as revealed by the in-plane magnetotransport measurement.

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preprint2020arXiv

A Gd@C82-based single molecular electret device with switchable electrical polarization

Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of GdC82, where the encapsulated Gd atom forms a charge center, and we have observed a gate controlled switching behavior between two sets of single electron transport stability diagrams. The switching is operated in a hysteresis loop with a coercive gate field of around 0.5Vnm. Theoretical calculations have assigned the two conductance diagrams to corresponding energy levels of two states that the Gd atom is trapped at two different sites of the C82 cage, which possess two different permanent electrical dipole orientations. The two dipole states are stabilized by the anisotropic energy and separated by a transition energy barrier of 70 meV. Such switching is then accessed to the electric field driven reorientation of individual dipole while overcoming the barriers by the coercive gate field, and demonstrates the creation of a single molecular electret.

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preprint2020arXiv

Investigation of plasmonic evolution of atomically size-selected Au clusters by electron energy loss spectrum--from solid state to molecular scale

Versatile quantum modes emerge for plasmon describing the collective oscillations of free electrons in metallic nanoparticles when the particle sizes are greatly reduced. Rather than traditional nanoscale study, the understanding of quantum plasmon desires extremal atomic control of the nanoparticles, calling for size dependent plasmon measurement over a series of nanoparticles with atomically adjustable atom number over several orders of magnitude. Here we report the N dependent plasmonic evolution of atomically size selected gold particles with N= 100 70000 using electron energy loss (EEL) spectroscopy in a scanning transmission electron microscope. The EEL mapping assigns a feature at 2.7 eV as the bulk plasmon and another at 2.4 eV as surface plasmon, which evolution reveals three regimes. When N decreases from 70000 to 887, the bulk plasmon stays unchanged while the surface plasmon exhibits a slight red shift from 2.4 to 2.3 eV. It can be understood by the dominance of classical plasmon physics and electron boundary scattering induced retardation. When N further decreases from 887 to 300, the bulk plasmon disappears totally and the surface plasmon shows a steady blueshift, which indicates that the quantum confinement emerges and modifies the intraband transition. When N 100 300, the plasmon is split to three fine features, which is attributed to superimposed single electron transitions between the quantized molecular like energy level by the time dependent density functional theory calculations. The surface plasmon's excitation ratio has a scaling law with an exponential dependence on N ( N^0.669), essentially the square of the radius. A unified evolution picture from the classical to quantum, molecular plasmon is thus demonstrated.

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preprint2020arXiv

Large Magnetoresistance in Topological Insulator Candidate TaSe3

Large unsaturated magnetoresistance (XMR) with magnitude about 1000% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio n_h/n_e closing 0.9 at T< 20 K , which suggests that the carrier compensations account for the XMR in TaSe3.

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preprint2019arXiv

Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device

Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seen reversed AHE is attributed to the competition of the intrinsic Berry curvature and the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.

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preprint2019arXiv

Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal

Topological semimetals characterize a novel class of quantum materials hosting Dirac/Weyl fermions. The important features of topological fermions can be exhibited by quantum oscillations. Here we report the magnetoresistance and Shubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in the single crystal of topological semimetal Ta3SiTe6 with the magnetic field up to 38 T. Periodic amplitude of the oscillations reveals related information about the Fermi surface. The fast Fourier transformation spectra represent a single oscillatory frequency. The analysis of the oscillations shows the Fermi pocket with a cross-section area of 0.13 angstrom power minus 2. Combining magneto-transport measurements and the first-principles calculation, we find that these oscillations come from the hole pocket. Hall resistivity and the SdH oscillations recommend that Ta3SiTe6 is a hole dominated system.

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preprint2016arXiv

Discovery of a new type of topological Weyl fermion semimetal state in Mo$_x$W$_{1-x}$Te$_2$

The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo$_x$W$_{1-x}$Te$_2$ are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ at $x = 25\%$. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that Mo$_x$W$_{1-x}$Te$_2$ is the first Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making Mo$_x$W$_{1-x}$Te$_2$ a promising platform for transport and optics experiments on Weyl semimetals.

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preprint2016arXiv

Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance

The unconventional magnetoresistance of ZrSiS single crystals is found unsaturated till the magnetic field of 53 T with the butterfly shaped angular dependence. Intense Shubnikov-de Haas oscillations resolve a bulk Dirac cone with a nontrivial Berry phase, where the Fermi surface area is 1.80*10^-3 Å-2 and reaches the quantum limit before 20 T. Angle resolved photoemission spectroscopy measurement reveals an electronic state with the two-dimensional nature around the X point of Brillouin zone boundary. By integrating the density functional theory calculations, ZrSiS is suggested to be a Dirac material with both surface and bulk Dirac bands.

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preprint2016arXiv

Measuring Chern numbers above the Fermi level in the Type II Weyl semimetal Mo$_x$W$_{1-x}$Te$_2$

It has recently been proposed that electronic band structures in crystals give rise to a previously overlooked type of Weyl fermion, which violates Lorentz invariance and, consequently, is forbidden in particle physics. It was further predicted that Mo$_x$W$_{1-x}$Te$_2$ may realize such a Type II Weyl fermion. One crucial challenge is that the Weyl points in Mo$_x$W$_{1-x}$Te$_2$ are predicted to lie above the Fermi level. Here, by studying a simple model for a Type II Weyl cone, we clarify the importance of accessing the unoccupied band structure to demonstrate that Mo$_x$W$_{1-x}$Te$_2$ is a Weyl semimetal. Then, we use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe the unoccupied band structure of Mo$_x$W$_{1-x}$Te$_2$. For the first time, we directly access states $> 0.2$ eV above the Fermi level. By comparing our results with $\textit{ab initio}$ calculations, we conclude that we directly observe the surface state containing the topological Fermi arc. Our work opens the way to studying the unoccupied band structure as well as the time-domain relaxation dynamics of Mo$_x$W$_{1-x}$Te$_2$ and related transition metal dichalcogenides.

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preprint2016arXiv

Quantum oscillation and nontrivial transport in the Dirac Semimetal Cd3As2 nanodevice

Here we demonstrate the Shubnikov de Haas oscillation in high-quality Cd3As2 nanowires grown by a chemical vapor deposition approach. The dominant transport of topological Dirac fermions is evident by the nontrivial Berry phase in the Landau Fan diagram. The quantum oscillations rise at a small field of 2 Tesla and preserves till up to 100K, revealing a sizeable Landau level gap and a mobility of over 2000 cm2/V-1s-1. The angle-variable oscillations indicates the isotropy of the bulk Dirac transport. The large estimated mean free path appeals the one-dimensional transport of Dirac semimetals.

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preprint2016arXiv

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.

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preprint2016arXiv

Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$

Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ with changing composition $x$. Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at $x_c \sim 7\%$, showing the critical point of a topological Weyl phase transition. For Mo dopings $x < x_c$, we observe no Fermi arc, while for $x > x_c$, the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications.

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preprint2016arXiv

Weak antilocalization in Cd3As2 thin films

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.

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preprint2015arXiv

Enhanced quantum coherence in graphene caused by Pd cluster deposition

We report on the unexpected increase in the dephasing lengths of a graphene sheet caused by the deposition of Pd nanoclusters, as demonstrated by weak localization measurements. The dephasing lengths reached saturated values at low temperatures. Theoretical calculations indicate the p-type charge transfer from the Pd clusters, which contributes more carriers. The saturated values of dephasing lengths often depend on both the carrier concentration and mean free path. Although some impurities are increased as revealed by decreased mobilities, the intense charge transfer leads to the improved saturated values and subsequent improved dephasing lengths.

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preprint2015arXiv

Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications.

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preprint2015arXiv

Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states.

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preprint2015arXiv

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride

Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 Tesla. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of 7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasing pressure, thereby exhibiting the typical dome-shaped superconducting phase. From theoretical calculations, we interpret the low-pressure region of the superconducting dome to an enrichment of the density of states at the Fermi level and attribute the high-pressure decrease in Tc to possible structural instability. Thus, Tungsten ditelluride may provide a new platform for our understanding of superconductivity phenomena in transition metal dichalcogenides.

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preprint2015arXiv

Robust linear magnetoresistance in WTe2

Unsaturated magnetoresistance (MR) has been reported in WTe2, and remains irrepressible up to very high field. Intense optimization of the crystalline quality causes a squarely-increasing MR, as interpreted by perfect compensation of opposite carriers. Herein we report our observation of linear MR (LMR) in WTe2 crystals, the onset of which is first identified by constructing the mobility spectra of the MR at low fields. The LMR further intensifies and predominates at fields higher than 20 Tesla while the parabolic MR gradually decays. The LMR remains unsaturated up to a high field of 60 Tesla and persists, even at a high pressure of 6.2 GPa. Assisted by density functional theory calculations and detailed mobility spectra, we find the LMR to be robust against the applications of high field, broken carrier balance, and mobility suppression. Angle-resolved photoemission spectroscopy reveals a unique quasilinear energy dispersion near the Fermi level. Our results suggest that the robust LMR is the low bound of the unsaturated MR in WTe2.

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preprint2015arXiv

The positive piezoconductive effect in graphene

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

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preprint2015arXiv

Unoccupied electronic structure and signatures of topological Fermi arcs in the Weyl semimetal candidate Mo$_x$W$_{1-x}$Te$_2$

Weyl semimetals have sparked intense research interest, but experimental work has been limited to the TaAs family of compounds. Recently, a number of theoretical works have predicted that compounds in the Mo$_x$W$_{1-x}$Te$_2$ series are Weyl semimetals. Such proposals are particularly exciting because Mo$_x$W$_{1-x}$Te$_2$ has a quasi two-dimensional crystal structure well-suited to many transport experiments, while WTe$_2$ and MoTe$_2$ have already been the subject of numerous proposals for device applications. However, with available ARPES techniques it is challenging to demonstrate a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$. According to the predictions, the Weyl points are above the Fermi level, the system approaches two critical points as a function of doping, there are many irrelevant bulk bands, the Fermi arcs are nearly degenerate with bulk bands and the bulk band gap is small. Here, we study Mo$_x$W$_{1-x}$Te$_2$ for $x = 0.07$ and 0.45 using pump-probe ARPES. The system exhibits a dramatic response to the pump laser and we successfully access states $> 0.2$eV above the Fermi level. For the first time, we observe direct, experimental signatures of Fermi arcs in Mo$_x$W$_{1-x}$Te$_2$, which agree well with theoretical calculations of the surface states. However, we caution that the interpretation of these features depends sensitively on free parameters in the surface state calculation. We comment on the prospect of conclusively demonstrating a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$.

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preprint2014arXiv

Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics

We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick flakes. Such optimized topological SS transport is achieved by an intense aging process, when the bulk conductance is suppressed by four orders of magnitude in the long period. Scanning tunneling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the aging. In combination with first-principles calculations, an atomic tunneling-clustering procedure across a diffusion barrier of 0.57eV is proposed.

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preprint2014arXiv

Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons

Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of these experiments is made difficult by the presence of residual bulk carriers and their coupling to surface states, which is not yet well understood. In this work, we present the first evidence for the existence and control of bulk-surface coupling in Bi2Te2Se nanoribbons, which are promising platforms for future TI-based devices. Our magnetoresistance measurements reveal that the number of coherent channels contributing to quantum interference in the nanoribbons changes abruptly when the film thickness exceeds the bulk phase relaxation length. We interpret this observation as an evidence for bulk-mediated coupling between metallic states located on opposite surfaces. This hypothesis is supported by additional magnetoresistance measurements conducted under a set of gate voltages and in a parallel magnetic field, the latter of which alters the intersurface coupling in a controllable way.

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preprint2014arXiv

Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes

Universal conductance fluctuations (UCFs) are extracted in the magnetoresistance responses in the bulk-insulating Bi2Te2Se microflakes. Its two-dimensional character is demonstrated by the field-tilting magnetoresistance measurements. Its origin from the surface electrons is determined by the fact that the UCF amplitudes keep unchanged while applying an in-plane field to suppress the coherence of bulk electrons. After considering the ensemble average in a batch of micrometer-sized samples, the intrinsic UCF magnitudes of over 0.37 e2/h is obtained. This agrees with the theoretical prediction on topological surface states. All the evidence point to the successful observation of the UCF of topological surface states.

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preprint2014arXiv

Two-dimensional Quasi-Freestanding Molecular Crystals for High-Performance Organic Field-Effect Transistors

Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10cm2V-1s-1 and aggressively scaled saturation voltage around 1V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.

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preprint2013arXiv

Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide

Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report transport study in few-layer molybdenum disulfide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulfur vacancies exist in molybdenum disulfide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbor hopping at high temperatures and variable-range hopping at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hopping via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulfide.

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preprint2013arXiv

Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets

Metallic Bi2Te3 crystalline sheets with the room-temperature resistivity of above 10 mΩ cm were prepared and their magnetoresistive transport was measured in a field of up to 9 Tesla. The Shubnikov de Haas oscillations were identified from the secondly-derived magnetoresistance curves. While changing the angle between the field and normal axis of the sheets, we find that the oscillation periods present a cosine dependence on the angle. This indicates a two-dimensional transport due to the surface state. The work reveals a resolvable surface contribution to the overall conduction even in a metallic topological insulator.

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preprint2012arXiv

Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes

Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of the topological surface states on the exfoliated Bi2Te3 microflakes by a flux period of h/2e in their magnetoresistance oscillations and its weak field character. Both the osillations with the period of h/e and h/2e are observed. The h/2e-period AAS oscillation gradually dominates with increasing the sample widths and the temperatures. This reveals the transition of the Dirac Fermions' transport to the diffusive regime.

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preprint2012arXiv

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons

The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior.

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preprint2012arXiv

Visualizing plasmon coupling in closely-spaced chains of Ag nanoparticles by electron energy loss spectroscopy

Anisotropic plasmon coupling in closely-spaced chains of Ag nanoparticles was visualized using the electron energy loss spectroscopy in a scanning transmission electron microscope. For dimers as the simplest chain, mapping the plasmon excitations with nanometers' spatial resolution and 0.27 eV energy resolution intuitively identified two coupling plasmons. The in-phase mode redshifted from the ultraviolet region as the inter-particle spacing was reduced, reaching the visible range at 2.7 eV. Calculations based on the discrete dipole approximation confirmed its optical activeness, where the longitudinal direction was constructed as the path for light transportation. Two coupling paths were then observed in an inflexed 4-particle chain.

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preprint2010arXiv

Calibrating the atomic balance by carbon nanoclusters

Carbon atoms are counted at near atomic-level precision using a scanning transmission electron microscope calibrated by carbon nanocluster mass standards. A linear calibration curve governs the working zone from a few carbon atoms up to 34,000 atoms. This linearity enables adequate averaging of the scattering cross sections, imparting the experiment with near atomic-level precision despite the use of a coarse mass reference. An example of this approach is provided for thin layers of stacked graphene sheets. Suspended sheets with a thickness below 100 nm are visualized, providing quantitative measurement in a regime inaccessible to optical and scanning probe methods.

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preprint2010arXiv

Experimental observation of nanojets formed by heating the PbO-coated Pb clusters

In this article, we will present the first experimental observation of nanojets formed by heating PbO-coated Pb clusters, which has been predicted theoretically by M. Moseler and U Landman. During the heating, the hot liquid ejects through the broken orifice into vacuum, and forms a condensed trail in the tadpole shape as shown in the TEM micrographs. The temperature-variable Raman spectra indicates that the nanojet formation is closely related to the heating temperature and thus essentially to the internal pressure in the coated clusters. The pressure inside the shell, which rises from the inner core's melting and its confined volume expansion and then drops after the final explosion, dominates the whole nanojetting process.

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preprint2010arXiv

Films with the discrete nano-DLC-particles as the field emission cascade

The films with the discrete diamond-like-carbon nanoparticles were prepared by the deposition of the carbon nanoparticle beam. Their morphologies were imaged by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nanoparticles were found distributed on the silicon (100) substrate discretely. The semisphere shapes of the nanoparticles were demonstrated by the AFM line profile. EELS was measured and the sp3 ratio as high as 86% was found. The field-induced electron emission of the as-prepared cascade (nanoDLC/ Si) was tested and the current density of 1mA/cm2 was achieved at 10.2V/μm.

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preprint2010arXiv

Free-standing Graphene as Gold Standard

We demonstrate using graphene sheets as a novel mass standard in the scanning transmission electron microscopy (STEM) based mass spectrometry. Here, free-standing graphene sheets are investigated by STEM. The discrete number of graphene layers enables an accurate calibration of STEM intensity, as performed over an extended thickness and with single atomic layer sensitivity. This leads to the direct and accurate measurement of the electron mean free path. As an application, we gain the insight of carbon nanoparticles of complex structure.

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preprint2010arXiv

Low energy cluster beam deposited BN films as the cascade for Field Emission

The atomic deposited BN films with the thickness of nanometers (ABN) were prepared by radio frequency magnetron sputtering method and the nanostructured BN films (CBN) were prepared by Low Energy Cluster Beam Deposition. UV-Vis Absorption measurement proves the band gap of 4.27eV and field emission of the BN films were carried out. F-N plots of all the samples give a good fitting and demonstrate the F-N tunneling of the emission process. The emission of ABN begins at the electric field of 14.6 V/μm while that of CBN starts at 5.10V/μm. Emission current density of 1mA/cm2 for ABN needs the field of 20V/μm while that of CBN needs only 12.1V/μm. The cluster-deposited BN on n-type Silicon substrate proves a good performance in terms of the lower gauge voltage, more emission sites and higher electron intensity and seems a promising substitute for the cascade of Field Emission.

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preprint2010arXiv

Two-step splitting the expandable graphite for few-layer graphene

Few-layer graphene sheets are prepared by splitting the expanded graphites using a high-power sonication. Atomic-level quantitative scanning transmission electron microscopy (Q-STEM) is employed to carry out the efficient layer statisticsm, enabling global optimization of the experimental conditions. A two-step splitting mechanism is thus revealed, in which the mean layer number was firstly reduced to less than 20 by heating to 1100°C and then tuned to the few-layer region by a 5-minute 104W/litre sonication. Raman spectroscopic analysis confirms the above mechanism and demonstrates that the sheets are largely free of defects and oxides.

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preprint2010arXiv

Visualizing topological insulating Bi2Te3 quintuple layers on SiO2-capped Si substrates and its contrast optimization

Thin Bi2Te3 flakes, with as few as 3 quintuple layers, are optically visualized on the SiO2-capped Si substrates. Their optical contrasts vary with the illumination wavelength, flake thickness and capping layers. The maximum contrast appears at the optimized light with the 570nm wavelength. The contrast turns reversed when the flake is reduced to less than 20 quintuple layers. A calculation based on the Fresnel law describes the above observation with the constructions of the layer number-wave length-contrast three-dimensional (3D) diagram and the cap thickness-wavelength-contrast 3D diagram, applicative in the current studies of topological insulating flakes.

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