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Baigeng Wang

Baigeng Wang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-matcond-mat.othercond-mat.quant-gasphysics.app-phquant-ph

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Published work

41 published item(s)

preprint2026arXiv

Artificial Gauge Field Engineered Excited-State Topology: Control of Dynamical Evolution of Localized Spinons

Spinons are elementary excitations at the core of frustrated quantum magnets. Although it is well-established that a pair of spinons can emerge from a magnon via deconfinement, controlled manipulation of individual spinons and direct observation of their deconfinement remain elusive. We propose an artificial gauge field scenario that enables the engineering of specific excited states in quantum spin models. This generates spatially localized individual spinons with high controllability. By applying time-dependent gauge fields, we realize adiabatic braiding of these spinons, as well as their dynamical evolution in a controllable manner. These results not only provide the first direct visualization of individual spinons localized in the bulk, but also point to new possibilities to simulate their confinement process. Finally, we demonstrate the feasibility of our scenario in Rydberg atoms, which suggests an experimentally viable direction--gauge field engineering of correlated phenomena in excited states.

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preprint2026arXiv

Probing quantum critical crossover via impurity renormalization group

Quantum impurities can host exotic many-body states that serve as sensitive probes of bath correlations. However, quantitative and non-perturbative methods for determining impurity thermodynamics in such settings remain scarce. Here, we introduce an impurity renormalization group approach that merges the tensor-network representation with the numerical renormalization group cutoff scheme. This method overcomes conventional limitations by treating bath correlations and impurity interactions on an equal footing. Applying our approach to the finite-temperature quantum critical regime of quantum spin systems, we uncover striking impurity-induced phenomena. In a coupled Heisenberg ladder, the impurity triggers a fractionalization of the local magnetic moment. Moreover, the derivative of the impurity susceptibility develops cusps that mark the crossover into the quantum critical regime. We also observe an exotic evolution of the spin correlation function driven by the interplay between bath correlations and the impurity. Our results demonstrate that this method can efficiently solve correlated systems with defects, opening new pathways to discovering novel impurity physics beyond those in non-interacting thermal baths.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Chern-Simons superconductors and their instabilities

Two-dimensional quantum antiferromagnets host rich physics, including long-range ordering, high-$T_c$ superconductivity, quantum spin liquid behavior, topological ordering, a variety of other exotic phases, and quantum criticalities. Frustrating perturbations in antiferromagnets may give rise to strong quantum fluctuations, challenging the theoretical understanding of the many-body ground state. Here we develop a method to describe the quantum antiferromagnets using fermionic degrees of freedom. The method is based on a formally exact mapping between spin exchange models and theories describing fermionic matter with the emergent $U(1)$ Chern-Simons gauge field. For the planar Néel state, this mapping self-consistently generates the Chern-Simons superconductor mean-field ground state of introduced spinless fermions. We systematically compare the Chern-Simons superconductor state with the planar Néel state at the level of collective modes as well as order parameters. We reveal qualitative and quantitative correspondences between these two states. We demonstrate that such a construction using the fractionalized excitations and Chern-Simons gauge field can not only describe the Néel order but can also be applied to study quantum spin liquids. Furthermore, we show that the confinement-deconfinement transitions from the Néel order to quantum spin liquids are signaled and characterized by the instabilities of Chern-Simons superconductors, driven by strong frustration. The results suggest observing and classifying the descendants of antiferromagnets, including other ordered states and unconventional superconductors, as well as emergent quantum spin liquids.

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preprint2022arXiv

Exact solutions of Kondo problems in higher-order fermions

The conformal field theory (CFT) approach to Kondo problems, originally developed by Affleck and Ludwig (AL), has greatly advanced the fundamental knowledge of Kondo physics. The CFT approach to Kondo impurities is based on a necessary approximation, i.e., the linearization of the low-lying excitations in a narrow energy window about the Fermi surface. This treatment works well in normal metal baths, but encounters fundamental difficulties in systems with Fermi points and high-order dispersion relations. Prominent examples of such systems are the recently-proposed topological semimetals with emergent higher-order fermions. Here, we develop a new CFT technique that yields exact solutions to the Kondo problems in higher-order fermion systems. Our approach does not require any linearization of the low-lying excitations, and more importantly, it rigorously bosonizes the entire energy spectrum of the higher-order fermions. Therefore, it provides a more solid theoretical base for evaluating the thermodynamic quantities at finite temperatures. Our work significantly broadens the scope of CFT techniques and brings about unprecedented applications beyond the reach of conventional methods.

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preprint2020arXiv

A Gd@C82-based single molecular electret device with switchable electrical polarization

Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of GdC82, where the encapsulated Gd atom forms a charge center, and we have observed a gate controlled switching behavior between two sets of single electron transport stability diagrams. The switching is operated in a hysteresis loop with a coercive gate field of around 0.5Vnm. Theoretical calculations have assigned the two conductance diagrams to corresponding energy levels of two states that the Gd atom is trapped at two different sites of the C82 cage, which possess two different permanent electrical dipole orientations. The two dipole states are stabilized by the anisotropic energy and separated by a transition energy barrier of 70 meV. Such switching is then accessed to the electric field driven reorientation of individual dipole while overcoming the barriers by the coercive gate field, and demonstrates the creation of a single molecular electret.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device

Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero and changes to a reversed sign. The reversed AHE exhibits distinct coercive fields and temperature dependence from the previous AHE. It reaches the maximum inside the gap of the Dirac cone. The newly-seen reversed AHE is attributed to the competition of the intrinsic Berry curvature and the Dirac-gap enhanced extrinsic skew scattering. Its gate-controlled switching contributes a scheme for the topological spin field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance

The unconventional magnetoresistance of ZrSiS single crystals is found unsaturated till the magnetic field of 53 T with the butterfly shaped angular dependence. Intense Shubnikov-de Haas oscillations resolve a bulk Dirac cone with a nontrivial Berry phase, where the Fermi surface area is 1.80*10^-3 Å-2 and reaches the quantum limit before 20 T. Angle resolved photoemission spectroscopy measurement reveals an electronic state with the two-dimensional nature around the X point of Brillouin zone boundary. By integrating the density functional theory calculations, ZrSiS is suggested to be a Dirac material with both surface and bulk Dirac bands.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2

The progress in exploiting new electronic materials and devices has been a major driving force in solid-state physics. As a new state of matter, a Weyl semimetal (WSM), particularly a type-II WSM, hosts Weyl fermions as emergent quasiparticles and may harbor novel electrical transport properties because of the exotic Fermi surface. Nevertheless, such a type-II WSM material has not been experimentally observed in nature. In this work, by performing systematic magneto-transport studies on thin films of a predicted material candidate WTe2, we observe notable angle-sensitive (between the electric and magnetic fields) negative longitudinal magnetoresistance (MR), which can likely be attributed to the chiral anomaly in WSM. This phenomenon also exhibits strong planar orientation dependence with the absence of negative longitudinal MR along the tungsten chains (a axis), which is consistent with the distinctive feature of a type-II WSM. By applying a gate voltage, we demonstrate that the Fermi energy can be tuned through the Weyl points via the electric field effect; this is the first report of controlling the unique transport properties in situ in a WSM system. Our results have important implications for investigating simulated quantum field theory in solid-state systems and may open opportunities for implementing new types of electronic applications, such as field-effect chiral electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Kondo-induced hybrid topological insulator in two-dimensional electron system with a quadratic band crossing point

We investigate the Kondo effect in the two-dimensional electron system with a non-trivial quadratic energy band crossing point. We show that the Kondo effect can induce a new hybrid topological insulator phase which is a coexistence state of the quantum anomalous Hall effect and the TRSbroken quantum spin Hall effect. This hybrid topological insulator exhibits not only a quantized charge Hall current but also a net spin current, which are localized at the edge boundaries. This peculiar topological state arises due to the interplay of two marginally relevant operators, i.e., the Kondo-coupling between the electrons and the local magnetic moment and the electron-electron interaction in the two-dimensional system.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measuring Chern numbers above the Fermi level in the Type II Weyl semimetal Mo$_x$W$_{1-x}$Te$_2$

It has recently been proposed that electronic band structures in crystals give rise to a previously overlooked type of Weyl fermion, which violates Lorentz invariance and, consequently, is forbidden in particle physics. It was further predicted that Mo$_x$W$_{1-x}$Te$_2$ may realize such a Type II Weyl fermion. One crucial challenge is that the Weyl points in Mo$_x$W$_{1-x}$Te$_2$ are predicted to lie above the Fermi level. Here, by studying a simple model for a Type II Weyl cone, we clarify the importance of accessing the unoccupied band structure to demonstrate that Mo$_x$W$_{1-x}$Te$_2$ is a Weyl semimetal. Then, we use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe the unoccupied band structure of Mo$_x$W$_{1-x}$Te$_2$. For the first time, we directly access states $> 0.2$ eV above the Fermi level. By comparing our results with $\textit{ab initio}$ calculations, we conclude that we directly observe the surface state containing the topological Fermi arc. Our work opens the way to studying the unoccupied band structure as well as the time-domain relaxation dynamics of Mo$_x$W$_{1-x}$Te$_2$ and related transition metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum anomalies in superconducting Weyl metals

We theoretically study the quantum anomalies in the superconducting Weyl metals based on the topological field theory. It is demonstrated that the Fermi arc and the surface Andreev bound state, characteristic of the superconducting Weyl metals, are the manifestations of two underlying phenomenon, namely the chiral anomaly and the parity-like anomaly, respectively. The first anomaly is inherited from the Berry curvature around the original Weyl points, while the second is the result of the superconductivity. We show that, all the fascinating topological behavior of the superconducting Weyl metals, either intranode FFLO or the internode BCS pairing state, can be satisfactorily described and predicted by our topological field theory.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum oscillation and nontrivial transport in the Dirac Semimetal Cd3As2 nanodevice

Here we demonstrate the Shubnikov de Haas oscillation in high-quality Cd3As2 nanowires grown by a chemical vapor deposition approach. The dominant transport of topological Dirac fermions is evident by the nontrivial Berry phase in the Landau Fan diagram. The quantum oscillations rise at a small field of 2 Tesla and preserves till up to 100K, revealing a sizeable Landau level gap and a mobility of over 2000 cm2/V-1s-1. The angle-variable oscillations indicates the isotropy of the bulk Dirac transport. The large estimated mean free path appeals the one-dimensional transport of Dirac semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Repairing atomic vacancies in single-layer MoSe2 field-effect transistor and its defect dynamics

Here we repair the single-layer MoSe2 field-effect transistors by the EDTA processing, after which the devices' room-temperature carrier mobility increases from 0.1 to over 70cm2/Vs. The atomic dynamics is constructed by the combined study of the first-principle calculation, aberration-corrected transmission electron microscopy and Raman spectroscopy. Single/double Se vacancies are revealed originally, which cause some mid-gap impurity states and localize the device carriers. They are found repaired with the result of improved electronic transport. Such a picture is confirmed by a 1.5cm-1 red shift in the Raman spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spinon Majorana fermions

A realization of Majorana fermions is proposed in the frustrated magnets via the topological proximity effect. Specifically, we consider a theoretical model, where a topological insulator is coupled to a frustrated magnetic material through the spin exchange interaction. Using the renormalization group-based self-consistent mean-field approach, and calculating the self-energy correction due to the topological insulator, we find that the spin texture and the spin-momentum locking of the Dirac cone will be inherited by the spinons in the nearby frustrated magnets. This leads to a particular topological state of matter that supports the Majorana excitations. Unlike the conventional realization in SC systems, these Majorana fermions are the combination of spinons and anti-spinons, rather than electrons and holes. They can participate in the transport of spinons, leading to nontrivial properties of the spin transport.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$

Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ with changing composition $x$. Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at $x_c \sim 7\%$, showing the critical point of a topological Weyl phase transition. For Mo dopings $x < x_c$, we observe no Fermi arc, while for $x > x_c$, the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Universal anyons at the irradiated surface of topological insulator

Anyons have recently received great attention due to their promising application in topological quantum computation. The best validated system that enjoys the anyonic excitations are the Laughlin states. The quasi-particles in Laughlin states are neither fermions nor bosons but possess the discrete statistical angle ? = ?=m, with m being an integer. Here we report a possible realization of the universal Abelian anyons, whose statistical angle can be tuned continuously by external parameters and can take any arbitrary values interpolating ? = 0 and ? = ?. The proposed setup is the surface state of a three dimensional topological insulator driven by an amplitude-modulated circularly-polarized light. It is found that the external field leads to a particular Floquet phase, which is a two-spatial-dimensional analogy of the Weyl semimetal phase in the Floquet first Brillouin zone. The chiral anomaly of this phase results in a U(1) Chern-Simons gauge theory with a tunable Floquet Chern number. Owing to this underlying gauge field theory, the irradiated surface of topological insulator constitutes a promising platform for the observation of the universal anyons.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Weak antilocalization in Cd3As2 thin films

Recently, it has been theoretically predicted that Cd3As2 is a three dimensional Dirac material, a new topological phase discovered after topological insulators, which exhibits a linear energy dispersion in the bulk with massless Dirac fermions. Here, we report on the low-temperature magnetoresistance measurements on a ~50nm-thick Cd3As2 film. The weak antilocalization under perpendicular magnetic field is discussed based on the two-dimensional Hikami-Larkin-Nagaoka (HLN) theory. The electron-electron interaction is addressed as the source of the dephasing based on the temperature-dependent scaling behavior. The weak antilocalization can be also observed while the magnetic field is parallel to the electric field due to the strong interaction between the different conductance channels in this quasi-two-dimensional film.

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preprint2015arXiv

A van der Waals pn heterojunction with organic/inorganic semiconductors

van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.

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preprint2015arXiv

Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications.

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preprint2015arXiv

Lateral Heterojunction Sb2Te3/Bi2Te3 and its topological transport

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. A rectification curve was observed at low temperatures. Quantum correction from the weak antilocalization reveals the transport of the topological surface state. There was, therefore, a staggered-gap lateral heterojunction with a small junction voltage, which is appealing for a platform for spin filters and one-dimensional topological interface states.

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preprint2015arXiv

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride

Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 Tesla. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of 7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasing pressure, thereby exhibiting the typical dome-shaped superconducting phase. From theoretical calculations, we interpret the low-pressure region of the superconducting dome to an enrichment of the density of states at the Fermi level and attribute the high-pressure decrease in Tc to possible structural instability. Thus, Tungsten ditelluride may provide a new platform for our understanding of superconductivity phenomena in transition metal dichalcogenides.

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preprint2015arXiv

Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry

Lattice structure and symmetry of two-dimensional (2D) layered materials are of key importance to their fundamental mechanical, thermal, electronic and optical properties. Raman spectroscopy, as a convenient and nondestructive tool, however has its limitations on identifying all symmetry allowing Raman modes and determining the corresponding crystal structure of 2D layered materials with high symmetry like graphene and MoS2. Due to lower structural symmetry and extraordinary weak interlayer coupling of ReS2, we successfully identified all 18 first-order Raman active modes for bulk and monolayer ReS2. Without van der Waals (vdW) correction, our local density approximation (LDA) calculations successfully reproduce all the Raman modes. Our calculations also suggest no surface reconstruction effect and the absence of low frequency rigid-layer Raman modes below 100 cm-1. Combining with Raman and LDA thus provides a general approach for studying the vibrational and structural properties of 2D layered materials with lower symmetry.

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preprint2015arXiv

Realization of Room-Temperature Phonon-limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-limited transport is achieved in monolayer MoS2, which is a necessary factor for electronic device applications.

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preprint2015arXiv

Robust linear magnetoresistance in WTe2

Unsaturated magnetoresistance (MR) has been reported in WTe2, and remains irrepressible up to very high field. Intense optimization of the crystalline quality causes a squarely-increasing MR, as interpreted by perfect compensation of opposite carriers. Herein we report our observation of linear MR (LMR) in WTe2 crystals, the onset of which is first identified by constructing the mobility spectra of the MR at low fields. The LMR further intensifies and predominates at fields higher than 20 Tesla while the parabolic MR gradually decays. The LMR remains unsaturated up to a high field of 60 Tesla and persists, even at a high pressure of 6.2 GPa. Assisted by density functional theory calculations and detailed mobility spectra, we find the LMR to be robust against the applications of high field, broken carrier balance, and mobility suppression. Angle-resolved photoemission spectroscopy reveals a unique quasilinear energy dispersion near the Fermi level. Our results suggest that the robust LMR is the low bound of the unsaturated MR in WTe2.

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preprint2015arXiv

The large unsaturated magnetoresistance of Weyl semimetals

The Weyl semimetal (WSM) is a novel topological gapless state with promises exotic transport due to chiral anomaly. Recently, a family of nonmagnetic WSM candidates including TaAs, NbAs, NbP etc is confirmed by first principle calculation and experiments. The TaAs family are reported to display the large unsaturated magnetoresistance (XMR), which have not yet been explained. Here, we give a theoretical calculation of XMR based on the extended effective-medium approach to Weyl semimetals. We predict the power law of XMR at high magnetic field and the "turn-on" magnetic field, which are well in agreement with experiments data. Furthermore, we investigate the $θ$-dependence magnetoresistance and find the transition between the postive XMR and the negative magnetoresistance induced by chiral anomaly, which should be confirmed by further experiments.

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preprint2015arXiv

The positive piezoconductive effect in graphene

As the thinnest conductive and elastic material, graphene is expected to play a crucial role in post-Moore era. Besides applications on electronic devices, graphene has shown great potential for nano-electromechanical systems. While interlayer interactions play a key role in modifying the electronic structures of layered materials, no attention has been given to their impact on electromechanical properties. Here we report the positive piezoconductive effect observed in suspended bi- and multi-layer graphene. The effect is highly layer number dependent and shows the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer transport, as confirmed by the numerical calculations based on the non-equilibrium Green's function method. Our results enrich the understanding of graphene and point to layer number as a powerful tool for tuning the electromechanical properties of graphene for future applications.

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preprint2015arXiv

Unoccupied electronic structure and signatures of topological Fermi arcs in the Weyl semimetal candidate Mo$_x$W$_{1-x}$Te$_2$

Weyl semimetals have sparked intense research interest, but experimental work has been limited to the TaAs family of compounds. Recently, a number of theoretical works have predicted that compounds in the Mo$_x$W$_{1-x}$Te$_2$ series are Weyl semimetals. Such proposals are particularly exciting because Mo$_x$W$_{1-x}$Te$_2$ has a quasi two-dimensional crystal structure well-suited to many transport experiments, while WTe$_2$ and MoTe$_2$ have already been the subject of numerous proposals for device applications. However, with available ARPES techniques it is challenging to demonstrate a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$. According to the predictions, the Weyl points are above the Fermi level, the system approaches two critical points as a function of doping, there are many irrelevant bulk bands, the Fermi arcs are nearly degenerate with bulk bands and the bulk band gap is small. Here, we study Mo$_x$W$_{1-x}$Te$_2$ for $x = 0.07$ and 0.45 using pump-probe ARPES. The system exhibits a dramatic response to the pump laser and we successfully access states $> 0.2$eV above the Fermi level. For the first time, we observe direct, experimental signatures of Fermi arcs in Mo$_x$W$_{1-x}$Te$_2$, which agree well with theoretical calculations of the surface states. However, we caution that the interpretation of these features depends sensitively on free parameters in the surface state calculation. We comment on the prospect of conclusively demonstrating a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$.

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preprint2014arXiv

Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics

We report on the observation of the two-dimensional weak antilocalization in (Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistance in a tilted field. The dephasing analysis and scanning tunneling spectroscopy corroborate the transport of the topological surface states (SS). The SSs contribute 3.3% conductance in 30μm-thick material and become dominant in the 100nm-thick flakes. Such optimized topological SS transport is achieved by an intense aging process, when the bulk conductance is suppressed by four orders of magnitude in the long period. Scanning tunneling microscopy reveals that Cu atoms are initially inside the quintuple layers and migrate to the layer gaps to form Cu clusters during the aging. In combination with first-principles calculations, an atomic tunneling-clustering procedure across a diffusion barrier of 0.57eV is proposed.

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preprint2014arXiv

Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons

Nearly a decade after the discovery of topological insulators (TIs), the important task of identifying and characterizing their topological surface states through electrical transport experiments remains incomplete. The interpretation of these experiments is made difficult by the presence of residual bulk carriers and their coupling to surface states, which is not yet well understood. In this work, we present the first evidence for the existence and control of bulk-surface coupling in Bi2Te2Se nanoribbons, which are promising platforms for future TI-based devices. Our magnetoresistance measurements reveal that the number of coherent channels contributing to quantum interference in the nanoribbons changes abruptly when the film thickness exceeds the bulk phase relaxation length. We interpret this observation as an evidence for bulk-mediated coupling between metallic states located on opposite surfaces. This hypothesis is supported by additional magnetoresistance measurements conducted under a set of gate voltages and in a parallel magnetic field, the latter of which alters the intersurface coupling in a controllable way.

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preprint2014arXiv

Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes

Universal conductance fluctuations (UCFs) are extracted in the magnetoresistance responses in the bulk-insulating Bi2Te2Se microflakes. Its two-dimensional character is demonstrated by the field-tilting magnetoresistance measurements. Its origin from the surface electrons is determined by the fact that the UCF amplitudes keep unchanged while applying an in-plane field to suppress the coherence of bulk electrons. After considering the ensemble average in a batch of micrometer-sized samples, the intrinsic UCF magnitudes of over 0.37 e2/h is obtained. This agrees with the theoretical prediction on topological surface states. All the evidence point to the successful observation of the UCF of topological surface states.

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preprint2014arXiv

Mass classification and manipulation of zero modes in one-dimensional Dirac systems

We present a detailed mass classification of all possible zero-energy modes in one-dimensional Dirac systems. By introducing a linear mass term into the Dirac Hamiltonian, we find that the topologically protected zero-energy modes have the mass-momentum duality. Based on the duality, we classify three fundamental zero-energy modes in 2 * 2 subspaces respectively: solitons in sublattice subspace, Majorana zero modes in Nambu subspace, and magnetic zero-energy modes in spin subspace. Within the mechanism of mass competition, isolated zero-energy modes emerge by lifting Kramers degeneracy in the combined 8 * 8 inner space and its 4 * 4 subspaces. We also propose experimental methods of manipulating possible masses in Dirac Hamiltonians. Our classification scheme could easily be extended to 2D or 3D systems and applied to investigate topologically protected states in other fields.

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preprint2014arXiv

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here, we develop a facile low-temperature thiol chemistry to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps. High mobility greater than 80cm2 V-1 s-1 is achieved in backgated monolayer molybdenum disulfide field-effect transistors at room temperature. Furthermore, we develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances, including the density of charged impurities, short-range defects and traps. Our combined experimental and theoretical study provides a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.

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preprint2013arXiv

Floquet Weyl Semimetal Induced by Off-Resonant Light

We propose that a Floquet Weyl semimetal state can be induced in three-dimensional topological insulators, either nonmagnetic or magnetic, by the application of off-resonant light. The virtual photon processes play a critical role in renormalizing the Dirac mass and so resulting in a topological semimetal with vanishing gap at Weyl points. The present mechanism via off-resonant light is quite different from that via on-resonant light, the latter being recently suggested to give rise to a Floquet topological state in ordinary band insulators.

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preprint2013arXiv

Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets

Metallic Bi2Te3 crystalline sheets with the room-temperature resistivity of above 10 mΩ cm were prepared and their magnetoresistive transport was measured in a field of up to 9 Tesla. The Shubnikov de Haas oscillations were identified from the secondly-derived magnetoresistance curves. While changing the angle between the field and normal axis of the sheets, we find that the oscillation periods present a cosine dependence on the angle. This indicates a two-dimensional transport due to the surface state. The work reveals a resolvable surface contribution to the overall conduction even in a metallic topological insulator.

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preprint2013arXiv

Stabilization of Quantum Spin Hall Effect by Designed Removal of Time-Reversal Symmetry of Edge States

The quantum spin Hall (QSH) effect is known to be unstable to perturbations violating time-reversal symmetry. We show that creating a narrow ferromagnetic (FM) region near the edge of a QSH sample can push one of the counterpropagating edge states to the inner boundary of the FM region, and leave the other at the outer boundary, without changing their spin polarizations and propagation directions. Since the two edge states are spatially separated into different "lanes", the QSH effect becomes robust against symmetry-breaking perturbations.

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preprint2012arXiv

Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes

Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of the topological surface states on the exfoliated Bi2Te3 microflakes by a flux period of h/2e in their magnetoresistance oscillations and its weak field character. Both the osillations with the period of h/e and h/2e are observed. The h/2e-period AAS oscillation gradually dominates with increasing the sample widths and the temperatures. This reveals the transition of the Dirac Fermions' transport to the diffusive regime.

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preprint2012arXiv

Kosterlitz-Thouless transition in disordered two-dimensional topological insulators

The disorder-driven metal-insulator transition in the quantum spin Hall systems is studied by scaling analysis of the Thouless conductance $g$. Below a critical disorder strength, the conductance is independent of the sample size $M$, an indication of critically delocalized electron states. The calculated beta function $β=d\ln g/d\ln M$ indicates that the metal-insulator transition is Kosterlitz-Thouless (KT) type, which is characterized by bounding and unbounding of vortex-antivortex pairs of the local currents. The KT like metal-insulator transition is a basic characteristic of the quantum spin Hall state, being independent of the time-reversal symmetry.

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preprint2012arXiv

Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons

The universal conductance fluctuations (UCFs), one of the most important manifestations of mesoscopic electronic interference, have not yet been demonstrated for the two-dimensional surface state of topological insulators (TIs). Even if one delicately suppresses the bulk conductance by improving the quality of TI crystals, the fluctuation of the bulk conductance still keeps competitive and difficult to be separated from the desired UCFs of surface carriers. Here we report on the experimental evidence of the UCFs of the two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The solely-B\perp-dependent UCF is achieved and its temperature dependence is investigated. The surface transport is further revealed by weak antilocalizations. Such survived UCFs of the topological surface states result from the limited dephasing length of the bulk carriers in ternary crystals. The electron-phonon interaction is addressed as a secondary source of the surface state dephasing based on the temperature-dependent scaling behavior.

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preprint2011arXiv

Time-reversal-symmetry-broken quantum spin Hall effect

Quantum spin Hall (QSH) state of matter is usually considered to be protected by time-reversal (TR) symmetry. We investigate the fate of the QSH effect in the presence of the Rashba spin-orbit coupling and an exchange field, which break both inversion and TR symmetries. It is found that the QSH state characterized by nonzero spin Chern numbers $C_{\pm}=\pm 1$ persists when the TR symmetry is broken. A topological phase transition from the TR symmetry-broken QSH phase to a quantum anomalous Hall phase occurs at a critical exchange field, where the bulk band gap just closes. It is also shown that the transition from the TR symmetry-broken QSH phase to an ordinary insulator state can not happen without closing the band gap.

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preprint1999arXiv

Nonlinear Spin Polarized Transport Through a Quantum Dot

We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments orient at an angle $θ$ with respect to each other. The theory is based on nonequilibrium Green's function approach and focused on current perpendicular to plane geometry. Coulomb interaction has been taken into account explicitly at the Hartree level. We derive a formula in closed form for current flowing through the device in general terms of bias and temperature. In the wideband limit we report exact results for the TMR junction nonlinear I-V curve as a function of $θ$. We also report the conductance slope at zero bias as a function of temperature for which experimental results reported an anomalous behavior.

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