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Gilles Buchs

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Published work

5 published item(s)

preprint2020arXiv

Certification of spin-based quantum simulators

Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert space. Here, in the context of Fermi-Hubbard spin-based analogue simulators, we propose a modular many-body spin to charge conversion scheme that scales linearly with both the system size and the number of low-energy eigenstates to discriminate. Our protocol is based on the global charge state measurement of a 1D spin chain performed at different detuning potentials along the chain. In the context of semiconductor-based systems, we identify realistic conditions for detuning the chain adiabatically in order to avoid state mixing while preserving charge coherence. Large simulators with vanishing energy gaps, including 2D arrays, can be certified block-by-block with a number of measurements scaling only linearly with the system size.

preprint2015arXiv

Ultra-low phase-noise microwave generation using a diode-pumped solid-state laser based frequency comb and a polarization-maintaining pulse interleaver

We report ultra-low phase-noise microwave generation at a 9.6 GHz carrier frequency from optical frequency combs based on diode-pumped solid-state lasers emitting at telecom wavelength and referenced to a common cavity-stabilized continuous-wave laser. Using a novel fibered polarization-maintaining pulse interleaver, a single-oscillator phase-noise floor of -171 dBc/Hz has been measured with commercial PIN InGaAs photodiodes, constituting a record for this type of detector. Also, a direct optical measurement of the stabilized frequency combs timing jitter was performed using a balanced optical cross correlator, allowing for an identification of the origin of the current phase-noise limitations in the system.

preprint2014arXiv

Identifying signatures of photothermal current in a double-gated semiconducting nanotube

The remarkable electrical and optical properties or single-walled carbon nanotubes (SWNT) allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards industrial maturity requires a detailed understanding of the fundamental mechanisms governing the process of photocurrent generation. Here, we present scanning photocurrent microscopy measurements on a double-gated suspended semiconducting SWNT and show that both photovoltaic and photothermal mechanisms are relevant for the interpretation of the photocurrent. We find that the dominant or non-dominant character of one or the other processes depends on the doping profile, and that the magnitude of each contribution is strongly influenced by the series resistance from the band alignment with the metal contacts. These results provide new insight into the interpretation of features in scanning photocurrent microscopy and lay the foundation for the understanding of optoelectronic devices made from SWNTs.

preprint2012arXiv

Fast and efficient photodetection in nanoscale quantum-dot junctions

We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as charge extraction requires only two individual tunnel events. We find an efficient photoconductive gain mechanism with external quantum-efficiencies of 38 electrons-per-photon in combination with response times faster than 300 ns. This compact device-architecture may open up new routes for improved photodetector performance in which efficiency and bandwidth do not go at the cost of one another.

preprint2011arXiv

Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I-V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior.